1. An in-cell type touch liquid crystal display device, comprising:

a lower substrate;

an upper substrate disposed above the lower substrate to face the lower substrate, the upper substrate forming a display surface of the display device, an area of the upper substrate being larger than an area of the lower substrate;

a common electrode disposed under the upper substrate;

gate and data lines disposed under the upper substrate and arranged to cross each other to define a pixel region;

touch lines parallel to the data lines and arranged under the upper substrate alternately with the data lines;

a thin film transistor disposed at an intersection of the gate line and the data line;

a protective layer disposed under the upper substrate including the thin film transistor, the protective layer configured to expose a portion of each of the touch line and the common electrode and a portion of a drain electrode of the thin film transistor;

a pixel electrode disposed under the protective layer and coupled to the drain electrode;

a coupling line coupled to the touch line and the common electrode; and

a gate insulating layer disposed under the upper substrate, the gate insulating layer covering the common electrode and a gate electrode of the thin film transistor,

wherein the common electrode is disposed between the upper substrate and the protective layer, and

wherein the touch line and the data line do not overlap each other, and

wherein a distance between the upper surface of the upper substrate and the common electrode is smaller than a distance between the rear surface of the lower substrate and the common electrode.

2. The in-cell touch liquid crystal display device of claim 1, wherein the common electrode is formed in a shape of a large-area plate.

3. The in-cell type touch liquid crystal display device of claim 1, wherein the common electrode is formed over an entire surface of a pixel region formed by the gate lines and the data lines crossing each other.

4. The in-cell touch liquid crystal display device of claim 1, wherein the lower substrate is a color filter substrate and the upper substrate is a thin film transistor substrate.

5. The in-cell touch liquid crystal display device of claim 1, wherein an electrostatic discharge path is formed through the common electrode and a ground line of a printed circuit board coupled to the common electrode.

6. The in-cell touch liquid crystal display device of claim 5, further comprising:

a resistor disposed on the ground line of the printed circuit board forming the electrostatic discharge path.

7. The in-cell touch liquid crystal display device of claim 1, further comprising:

a transparent conductive layer disposed on the rear surface of the lower substrate.

8. The in-cell touch liquid crystal display device of claim 7, wherein an electrostatic discharge path is formed through the transparent conductive layer, the point silver portion, and the ground line.

9. A method of manufacturing an in-cell touch liquid crystal display device, comprising:

arranging a lower substrate and an upper substrate, wherein the area of the upper substrate is larger than that of the lower substrate;

forming a common electrode over the upper substrate;

forming gate and data lines arranged to cross each other to define a pixel region over the upper substrate;

forming a touch line parallel to the data line and arranged over the upper substrate to overlap the data line;

wherein the touch line and the data line do not overlap each other,

forming a thin film transistor at an intersection of the gate line and the data line;

forming a protective layer over the upper substrate including the thin film transistor, the protective layer configured to expose a portion of each of the touch line and the common electrode and a portion of a drain electrode of the thin film transistor;

forming a pixel electrode coupled to the drain electrode over the protective layer;

forming a coupling line coupled to the touch line and the common electrode;

attaching the upper substrate to the lower substrate to face the lower substrate; and

forming a gate insulating layer over the upper substrate, the gate insulating layer covering the common electrode and a gate electrode of the thin film transistor,

wherein the upper substrate forms a display surface of the display device, and

wherein the common electrode is formed between the upper substrate and the protective layer, and

wherein a distance between the upper surface of the upper substrate and the common electrode is smaller than a distance between the rear surface of the lower substrate and the common electrode.

10. The method of claim 9, wherein the common electrode is formed in a shape of a large-area plate.

11. The method of claim 9, wherein the common electrode is formed over an entire surface of a pixel region formed by the gate line and the data line crossing each other.

12. The method of claim 9, wherein the lower substrate is a color filter substrate and the upper substrate is a thin film transistor substrate.

13. The method of claim 9, wherein an electrostatic discharge path is formed through the common electrode and a ground line of a printed circuit board coupled to the common electrode.

14. The method of claim 13, further comprising:

a resistor is disposed on the ground line of the printed circuit board forming the electrostatic discharge path.

15. The method of claim 9, further comprising:

a transparent conductive layer is formed over the rear surface of the lower substrate.

16. The method of claim 15, wherein an electrostatic discharge path is formed through the transparent conductive layer, the point silver portion, and the ground line.

17. The method of claim 9, wherein the forming of the pixel electrode coupled to the drain electrode over the protection layer and the forming of the coupling line coupled to the touch line and the common electrode are simultaneously performed through a same mask process.

18. The method of claim 9, wherein the forming of the data line and the forming of the touch line disposed over the upper substrate in parallel to the data line are simultaneously performed by the same mask process.

Background

Recently, various types of flat panel display devices capable of reducing the weight and volume of the display device, which is a disadvantage of a Cathode Ray Tube (CRT), have been developed. Examples of such flat panel display devices may include Liquid Crystal Displays (LCDs), Field Emission Displays (FEDs), Plasma Display Panels (PDPs), Electroluminescence (EL) devices, and the like.

Since these flat panel display devices are thin and light, they are widely used as display devices in mobile communication terminals or portable information processors. In particular, in portable or mobile devices, the demand for thinner and lighter display panels having lower power consumption has increased.

The flat panel display device displays an image using a gate driver for supplying a scan signal to gate lines of a display panel and a data driver for supplying a data voltage to data lines. For example, a data driver coupled to a data line of the display panel may be disposed on one side of an upper portion of the display panel in a Tape Automated Bonding (TAB) manner. Further, a gate driver coupled to the gate lines of the display panel may be disposed on one side of the left portion of the display panel in a TAB manner.

In the method for configuring the gate driver and the data driver independently of the display panel and coupling the gate driver and the data driver to the display panel, a mounting area is required, and thus a bezel area, which is a boundary area of the display panel, inevitably occupies a large portion. As the demand for flat panel display devices has increased, technologies related to flat panel display devices have been developed, and the design of the flat panel display devices in terms of aesthetic appearance or various requirements have also increased.

As one of these requirements, the following demands for flat panel display devices are increasing: when viewing the flat panel display device, it is possible to minimize a black bezel occupying four sides of the surface of the flat panel display device, i.e., a bezel area.

Meanwhile, a touch panel technology has recently been proposed as a technology for operating a flat panel display device.

A typical touch display panel includes a touch panel and a display unit superimposed on the touch panel. Such a touch panel is designed as an operation interface.

The touch panel is transparent so that an image generated by the display unit can be directly viewed by a user without being blocked by the touch panel. In this way, the touch panel is transparent so that the image can be directly viewed by the user.

The above-described known touch panel technology may cause an increase in weight and thickness of the touch display panel, a decrease in light transmittance, and an increase in reflectance and haze ratio of the touch display panel.

On-cell touch technology and in-cell touch technology have been proposed to overcome the above-mentioned disadvantages of the conventional touch technology.

one of the on-cell type technologies is to form a complete color filter substrate by arranging sensors on the rear surface of the color filter substrate.

Further, another technique in the on-cell type technique is to dispose a touch sensor on a thin film and attach the thin film to a thin film transistor substrate of two substrates.

In addition, the in-cell type technology is configured to arrange sensors in a cell structure of a liquid crystal display panel. Currently, there are three main in-cell technologies, namely resistive, capacitive, and optical touch technologies. Resistive touch technology utilizes the voltage change of two conductive substrates and a common electrode disposed between the two substrates to determine the touch location on a touch display panel.

A conventional in-cell type touch LCD device using such an in-cell type touch technology will be described with reference to fig. 1 and 2.

Fig. 1 is a schematic cross-sectional view of a conventional in-cell type touch LCD device.

Fig. 2 is a diagram schematically illustrating a structure in which data lines and touch lines of a conventional in-cell type touch LCD device in a non-double data rate driving (non-DRD) form are arranged not to alternate with each other.

Referring to fig. 1, the conventional in-cell type touch LCD device includes a thin film transistor substrate 11, a color filter substrate 51 disposed over the thin film transistor substrate 11 to be spaced apart from the thin film transistor substrate 11 by a predetermined interval, and a liquid crystal layer 61 formed between the thin film transistor substrate 11 and the color filter substrate 51.

Here, the first protective layer 23 is formed on the entire surface of the substrate including the thin film transistor (not shown), and the planarization layer 25 is formed on the first protective layer 23.

A pixel electrode 27 electrically coupled to the thin film transistor is formed on the planarization layer 25.

A touch line 29 is formed on the second protective layer 28 provided on the planarization layer 25.

In addition, a plurality of common electrodes 35 overlapping the pixel electrodes 27 and coupled to the touch lines 29 are formed on the interlayer insulating layer 31 disposed on the second protective layer 28.

Meanwhile, a black matrix 53 for blocking light transmission to a region other than the pixel region is formed on the color filter substrate 51 disposed above the thin film transistor substrate 11, and red, green, and blue color filters 55 are formed in the pixel region of the color filter substrate 51.

In addition, a transparent conductive layer 57 having a high resistance value is formed on the entire surface of the color filter substrate 51 to realize touch performance by touching the surface of the color filter substrate 51. Here, the conductive layer 57 is used as a touch material layer instead of the existing Indium Tin Oxide (ITO) having a low resistance value in order to prevent static electricity from being generated with the finger capacitor.

Further, the liquid crystal layer 61 is interposed between the thin film transistor substrate 11 and the color filter substrate 51 attached to each other.

Referring to fig. 1 and 2, the conventional in-cell type touch LCD device is configured in a non-alternating (non-double rate driving (non-DRD)) structure, and the data lines 21 and the touch lines 29 overlap each other.

In addition, since the conventional in-cell type touch LCD device uses the entire surface of the color filter substrate 51 as a touch surface, a conductive layer 57 having a high resistance value is formed on the entire surface of the color filter substrate 51 to form a finger capacitance and an electrostatic discharge (ESD) path.

In addition, since the conventional in-cell type touch LCD device has a structure in which the touch line 29 overlaps the data line 21, a planarization layer 25 is further formed between the data line 21 and the touch line 29 in order to reduce the resistance (load) of the touch line 29.

In the conventional in-cell type LCD device implemented using the above-described configuration, touch performance is achieved by touching one surface of the color filter substrate 51 using the high-resistance conductive layer 57.

A mask manufacturing process of the conventional in-cell type touch LCD device having the above-described configuration will be schematically described with reference to fig. 3.

Fig. 3 is a flowchart illustrating a mask manufacturing process of a conventional in-cell type touch LCD device.

Referring to fig. 3, a mask manufacturing process of the conventional in-cell type touch LCD device includes: a first mask process S11 of forming a gate line and a gate electrode; a second mask process S12 of forming an active layer, a source electrode, and a drain electrode; a third mask process S13 of forming a drain electrode contact hole for exposing the drain electrode; a fourth mask process S14 of forming a pixel electrode electrically coupled to the drain electrode; a fifth mask process S15 of forming touch lines vertically overlapping the data lines; a sixth mask process S16 of forming a touch line contact hole in the interlayer insulating layer; and a seventh masking process S17 of forming a common electrode overlapping the pixel electrode and coupled to the touch line.

In this way, after the mask manufacturing process of the conventional in-cell type touch LCD device has been performed, one surface of the color filter substrate 51 is coated with a transparent conductive layer (not shown, see 57 in fig. 1) having a high resistance value in order to achieve touch performance by touching the one surface of the color filter substrate 51. At this time, the conductive layer 57 is coated under an additional external manufacturing process system independent of the manufacturing of the thin film transistor substrate and the color filter substrate.

Fig. 4 is a diagram schematically illustrating an ESD path of a conventional in-cell type touch LCD device.

Referring to fig. 4, in the conventional in-cell type touch LCD device, static electricity generated from the outside is discharged to the outside of the LCD device through a conductive layer 57 having a high resistance value, a silver dotting part (Ag) 91, a ground 81, and the like.

In this manner, according to the conventional in-cell type touch LCD device, the rear surface of the color filter substrate is coated with a conductive layer having a high resistance value under an additional external manufacturing process system independent of processes of manufacturing the thin film transistor substrate and the color filter substrate, thereby causing coating spots caused by organic materials on the rear surface of the color filter substrate.

Accordingly, since separate etching and cleaning processes, etc. are additionally required to eliminate such coating points, the number of manufacturing processes may increase due to the additionally required processes.

Further, since a transparent conductive layer having a high resistance value is formed on the color filter substrate instead of the conventional ITO, electrostatic spots are generated due to the transparent conductive layer, so that the anti-ESD characteristics are degraded, and thus, the yield and the touch sensitivity are deteriorated.

Further, since the distance (not shown, see d1 in fig. 1) between the finger and the common electrode (not shown) is lengthened, the value of the finger capacitance (see C1 in fig. 1) is reduced, and the area of the common electrode is small, thereby reducing the touch sensitivity when sensing a finger touch.

Further, in the conventional art, the touch line is disposed to overlap the data line, thereby increasing the touch line resistance (load). To prevent this, a planarization layer is substantially formed, so that the number of manufacturing processes increases.

In particular, since the conventional art employs a structure in which a separate metal layer is formed to form the touch line and the data line overlaps the touch line, a process of forming a thick planarization layer between the data line and the touch line is added to reduce the resistance of the touch line, thereby causing the entire manufacturing process to be complicated and increasing the manufacturing cost.

In addition, when manufacturing the conventional in-cell type touch LCD device, seven manufacturing masks are required to form at least the gate electrode, the source/drain electrodes, the drain contact hole, the pixel electrode, the touch line contact hole, and the common electrode, thereby increasing the number of panel manufacturing processes and manufacturing costs in proportion to the number of masks.

Disclosure of Invention

Various embodiments relate to an in-cell type touch LCD device and a method of manufacturing the same, in which screen display and screen touch are implemented by a thin film transistor substrate having an area greater than that of a color filter substrate, thereby improving touch performance and ESD performance.

Various embodiments relate to an in-cell type touch LCD device and a method of manufacturing the same, in which an existing high-resistance transparent conductive layer for implementing a touch is removed by employing a four-sided borderless design, thereby simplifying a manufacturing process and reducing manufacturing costs.

Various embodiments relate to an in-cell type touch LCD device and a method of manufacturing the same, which increase finger capacitance by reducing a distance between a finger and a common electrode, thereby improving touch sensitivity when sensing a finger touch and enhancing ESD characteristics.

Various embodiments relate to an in-cell type touch LCD device and a method of manufacturing the same, in which a resistor is added to a ground line of a printed circuit board coupled to an ESD path of a panel, so that touch performance can be secured and ESD characteristics can be improved even in the case where ITO is applied to a rear surface of a color filter substrate.

In an embodiment, a borderless in-cell type touch LCD device may include: a lower substrate; an upper substrate disposed above the lower substrate to face the lower substrate, the upper substrate having an area larger than that of the lower substrate and a liquid crystal layer interposed between the upper substrate and the lower substrate.

The in-cell type touch liquid crystal display device may include: a common electrode disposed over the upper substrate; gate and data lines disposed over the upper substrate and arranged to cross each other to define a pixel region; a touch line disposed over the upper substrate in parallel with the data line; a thin film transistor disposed at an intersection of the gate line and the data line; a protective layer disposed over the upper substrate including the thin film transistor, the protective layer configured to expose a portion of each of the touch line and the common electrode and a portion of a drain electrode of the thin film transistor; a pixel electrode disposed over the protective layer and coupled to the drain electrode; and a coupling line coupled to the touch line and the common electrode.

The in-cell type touch liquid crystal display device may further include a nitride-based insulating layer disposed above the upper substrate and below the common electrode.

The common electrode may be formed in the shape of a large-area plate.

The common electrode may be formed on an entire surface of the pixel region formed by the gate and data lines crossing each other.

The lower substrate may be a color filter substrate, and the upper substrate may be a thin film transistor substrate.

An electrostatic discharge path may be formed by the common electrode and a ground line of the printed circuit board coupled to the common electrode.

The in-cell type touch liquid crystal display device may further include a resistor disposed on a ground line of the printed circuit board forming the electrostatic discharge path.

The in-cell type touch liquid crystal display device may further include a transparent conductive layer disposed on the rear surface of the lower substrate.

An electrostatic discharge path may be formed by the transparent conductive layer, the point silver portion, and the ground line.

In another embodiment, a method of manufacturing a bezel-less in-cell type touch LCD device according to the present disclosure may include: a lower substrate is provided, an upper substrate is disposed above the lower substrate to face the lower substrate, an area of the upper substrate is larger than an area of the lower substrate, and a liquid crystal layer is formed between the upper substrate and the lower substrate.

The method of manufacturing the in-cell type touch LCD device may include: forming a common electrode over an upper substrate; forming a gate line and a data line arranged to cross each other to define a pixel region over an upper substrate; forming a touch line disposed over the upper substrate in parallel with the data line; forming a thin film transistor at an intersection of the gate line and the data line; forming a protective layer over the upper substrate including the thin film transistor, the protective layer configured to expose a portion of each of the touch line and the common electrode and a portion of a drain electrode of the thin film transistor; forming a pixel electrode coupled to the drain electrode over the protective layer; and forming a coupling line coupled to the touch line and the common electrode.

The method may further include forming a nitride-based insulating layer over the upper substrate and under the common electrode.

The common electrode may be formed in the shape of a large-area plate.

The common electrode may be formed on an entire surface of the pixel region formed by the gate and data lines crossing each other.

The lower substrate may be a color filter substrate, and the upper substrate may be a thin film transistor substrate.

The electrostatic discharge path may be formed by the common electrode and a ground line of the printed circuit board coupled to the common electrode.

The method may further include providing a resistor on a ground line of the printed circuit board forming the electrostatic discharge path.

The method may further include forming a transparent conductive layer on the rear surface of the lower substrate.

The electrostatic discharge path may be formed by the transparent conductive layer, the point silver portion, and the ground line.

The formation of the pixel electrode coupled to the drain electrode over the protective layer and the formation of the coupling line coupled to the touch line and the common electrode may be simultaneously performed through the same mask process.

The formation of the data lines and the formation of the touch lines arranged over the upper substrate in parallel to the data lines may be simultaneously performed through the same mask process.

Drawings

Fig. 1 is a schematic cross-sectional view of a conventional in-cell type touch LCD device.

Fig. 2 is a diagram schematically illustrating a structure in which data lines and touch lines of a conventional in-cell type touch LCD device are arranged in a non-alternating (non-DRD) form.

Fig. 3 is a diagram illustrating a mask manufacturing process of a conventional in-cell type touch LCD device.

Fig. 4 is a diagram schematically illustrating an ESD path of a conventional in-cell type touch LCD device.

Fig. 5 is a schematic cross-sectional view of a borderless in-cell type touch LCD device according to an embodiment of the present disclosure.

Fig. 6 is a diagram schematically illustrating a structure in which data lines and touch lines of a borderless in-cell type touch LCD device according to an embodiment of the present disclosure are arranged in an alternating (DRD) form.

Fig. 7 is a flowchart illustrating a mask manufacturing process of a borderless in-cell type touch LCD device according to an embodiment of the present disclosure.

Fig. 8A to 8H are cross-sectional views illustrating a process of manufacturing a borderless in-cell type touch LCD device according to an embodiment of the present disclosure.

Fig. 9 is a diagram schematically illustrating an ESD path of a borderless in-cell touch LCD device according to an embodiment of the present disclosure.

Fig. 10 is a cross-sectional view schematically illustrating a borderless in-cell type touch LCD device according to a further embodiment of the present disclosure.

Fig. 11 is a diagram schematically illustrating an ESD path of a borderless in-cell touch LCD device according to a further embodiment of the present disclosure.

Detailed Description

Hereinafter, embodiments of a borderless Liquid Crystal Display (LCD) device according to the present disclosure will be described in detail with reference to the accompanying drawings so that those skilled in the art to which the present disclosure pertains can easily practice the embodiments.

Advantages and features of the present disclosure, and methods of accomplishing the same, will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings. However, the present disclosure is not limited to the embodiments to be disclosed later, but may be implemented in various forms. The embodiments of the present disclosure are intended to fully describe the present disclosure to those having ordinary skill in the art to which the present disclosure pertains and are limited only by the appended claims. It should be noted that the same reference numerals are used throughout the specification to designate the same or similar elements. Accordingly, the size and relative sizes of layers and regions in the drawings may be exaggerated to make the description clearer.

The expression indicating that an element or layer is disposed "on" a specific element or layer includes all cases where another layer or element is interposed therebetween, except for the case where an element or layer is directly provided on a specific element or layer. In contrast, the expression that an indicating element is disposed "directly" on a particular element means that no additional element or layer is interposed therebetween.

Further, spatially relative terms such as "below … …," "below … …," "below," "over," and "upper" may be used herein to readily describe the relationship of one element or component to another element or component, as shown. Spatially relative terms should be understood to encompass different orientations of the elements in use or operation in addition to the orientation depicted in the figures. For example, if the elements in the figures are turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary term "below … …" can include both an orientation of above and below.

The terminology used in the description is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In this specification, the singular expressions include the plural expressions unless the context specifically indicates the contrary. In this specification, it should be understood that terms such as "comprises" and/or "comprising" are used merely to specify the presence of features, quantities, steps, operations, elements, parts, or combinations thereof, and are not intended to preclude the possibility that one or more other features, quantities, steps, operations, elements, parts, or combinations thereof will be present or added.

Fig. 5 is a schematic cross-sectional view of a borderless in-cell type touch LCD device according to an embodiment of the present disclosure.

Here, fig. 5 schematically illustrates a part of a Fringe Field Switching (FFS) type liquid crystal panel that implements an image in such a manner that a fringe field formed between a pixel electrode and a common electrode drives liquid crystal molecules located in a pixel region and on the common electrode after penetrating a slit. However, the present disclosure is not limited thereto, but may also be applied to an in-plane switching (IPS) type LCD device using a lateral electric field and an FFS type LCD device.

Referring to fig. 5, the bezel-less LCD device according to the present disclosure is characterized in that: the upper substrate 101 is implemented as a thin film transistor substrate, and the lower substrate 151 is implemented as a color filter substrate. That is, the frameless LCD device according to the present disclosure is characterized in that: unlike the conventional structure, an upper substrate having a relatively large area is disposed above a lower substrate. Here, a thin film transistor as a switching element and various types of lines and electrodes are formed on the upper substrate 101 to define a pixel region (not shown).

In addition, a color filter layer 155 for displaying three primary colors, e.g., red (R), green (G), and blue (B), and a Black Matrix (BM)153 for separating respective pixel regions (not shown) may be formed on the lower substrate 151. A lower polarizing plate (not shown) is formed on an outer surface of the lower substrate 151.

That is, on the upper substrate 101, there may be formed: a plurality of gate lines (not shown) and data lines 113 arranged horizontally and vertically and defining a plurality of pixel regions (not shown); a thin film transistor formed in an intersection region of the gate line and the data line 113 as a switching element; and a pixel electrode 125 formed in the pixel region.

Further, when the LCD device is a vertical electric field type such as a Twisted Nematic (TN) type, a common electrode (not shown) is formed on the lower substrate 151, and when the LCD device is a horizontal electric field type such as an in-plane switching (IPS) or a Fringe Field Switching (FFS) type, the pixel electrode 125 may be formed on the upper substrate 101 together with the common electrode 105.

As shown in fig. 5, a nitride-based insulating layer 103 is formed on an upper substrate 101 for forming a thin film transistor. Here, the nitride-based insulating layer 103 may improve screen display characteristics by blocking the appearance of a color, e.g., yellow, generated by the electrode lines made of a metal material, e.g., copper (Cu), so that the yellow color does not appear. That is, when the flip structure is applied, the pixel display surface becomes the thin film transistor substrate 101 instead of the color filter substrate 151 as in the conventional art, and thus the nitride-based insulating layer 103 is formed under the metal line to improve the reflection luminance of the metal line.

Further, a large-area common electrode 105 is formed on the insulating layer 103. The common electrode 105 is formed in the shape of a large-area plate.

Further, a plurality of gate lines (not shown) and data lines 113, each extending unidirectionally and spaced apart from each other in parallel, are formed on the upper substrate 101.

Further, a thin film transistor T composed of a gate electrode 107, an active layer 109, an ohmic contact layer 111, a source electrode 113a, and a drain electrode 113b is formed at each intersection of the gate line and the data line 113. At this time, a gate insulating layer 108 covering the gate electrode 107 is formed on the nitride-based insulating layer 103.

In addition, a touch line 115 is formed above the upper substrate 101 in parallel to the data line 113. Here, the data lines 113 and the touch lines 115 are alternately arranged in a Double Rate Drive (DRD) form.

Then, a protective layer 119 is formed on the entire surface of the substrate including the thin film transistor T. Further, a drain contact hole (not shown) for exposing a portion of the drain electrode 113b, and a common electrode contact hole (not shown) and a touch line contact hole (not shown) for exposing a portion of the common electrode 105 and a portion of the corresponding touch line 115, respectively, are formed in the protective layer 119.

Further, pixel electrodes 125 and coupling lines 127 are formed on the protective layer 119, wherein each pixel electrode 125 overlaps the common electrode 105 and is electrically coupled with the drain electrode 113b through a drain contact hole, and wherein each coupling line 127 electrically couples the common electrode 105 with the touch line 115 through a common electrode contact hole (not shown) and a touch line contact hole (not shown).

Then, an upper alignment layer (not shown) is formed on the entire surface of the protective layer 119 including the pixel electrode 125 and the coupling line 127.

Meanwhile, a black matrix 153 for blocking light transmission to regions other than the pixel region is formed on the lower substrate 151.

In addition, a red color filter, a green color filter, and a blue color filter 155 are formed in the pixel region of the lower substrate 151. Here, a black matrix 153 is formed on the lower substrate 151 between the red, green, and blue color filters 155.

In addition, ITO may be additionally formed on the rear surface of the lower substrate 151, and thus may be used for ESD prevention, thereby enhancing ESD prevention characteristics.

Meanwhile, when the upper substrate 101 and the lower substrate 151 are attached to each other, the black matrix 153 is disposed to overlap an area other than the pixel area of the upper substrate 101, for example, an area above the thin film transistor T, the gate line (not shown), and the data line 113.

Although not shown in the drawings, a lower alignment layer (not shown) for aligning liquid crystals in a certain direction is formed on the rear surface of the lower substrate 151.

When a data signal is supplied to the pixel electrode 125 through the thin film transistor T, a fringe field is formed between the pixel electrode 125 and the large-area common electrode 105 to which a common voltage is supplied, so that liquid crystal molecules horizontally aligned between the upper substrate 101 and the lower substrate 151 are rotated due to dielectric anisotropy. Therefore, the transmittance of light passing through the pixel region changes according to the degree of rotation of the liquid crystal molecules, and thus gray scales (gradations) can be realized.

In this way, the borderless in-cell type touch LCD device according to the present disclosure can implement screen display and screen touch through the upper substrate 101 for forming the thin film transistor, the area of the upper substrate 101 being larger than that of the lower substrate 151 for forming the color filter, thereby improving touch performance and ESD performance.

In addition, the present disclosure can implement screen display and screen touch by the upper substrate 101 for forming the thin film transistor, the upper substrate 101 having an area larger than that of the lower substrate 151 for forming the color filter, thereby improving touch performance and ESD performance.

In the present disclosure, the distance between the finger 171 and the common electrode 105 is decreased, and the finger capacitance C2 therebetween is increased, so that the finger sensitivity can be improved. The contact area on the common electrode 105 is increased so that the touch sensitivity when sensing a finger touch can be improved.

Further, in the present disclosure, the resistance of the touch line 115 is reduced due to the reduction of the capacitance between the touch line 115 and the pixel electrode 125, so that the touch sensitivity can be improved.

Fig. 6 is a diagram schematically illustrating a structure in which data lines and touch lines of a borderless in-cell type touch LCD device are alternately arranged in a DRD form according to an embodiment of the present disclosure.

Referring to fig. 6, the in-cell type touch LCD device according to an embodiment of the present disclosure employs an advanced in-plane switching DRD (ah IPS DRD) structure in which a data line 113 and a touch line 115 are formed on an upper substrate 101 in an alternating (double data rate driving: DRD) structure, i.e., a structure in which they alternate with each other.

A mask manufacturing process of the borderless in-cell type touch LCD device having the above-described configuration according to the present disclosure will be schematically described below with reference to fig. 7.

Fig. 7 is a flowchart illustrating a mask manufacturing process of a borderless in-cell type touch LCD device according to the present disclosure.

Referring to fig. 7, a mask manufacturing process of a borderless in-cell type touch LCD device according to the present disclosure includes: a first mask process S101 of forming a common electrode on an upper substrate for forming a thin film transistor; a second mask process S102 of forming a gate electrode on the upper substrate including the common electrode; a third mask process S103 of forming an active layer, a source electrode, a drain electrode, and a touch line on the upper substrate including the gate electrode; a fourth mask process S104 of forming a drain contact hole for exposing the drain electrode and forming a common electrode contact hole and a touch line contact hole for exposing the common electrode and the touch line, respectively, in the protective layer covering the source electrode, the drain electrode, and the touch line; and a fifth mask process S105 of forming a pixel electrode coupled to the drain electrode, a coupling line coupled to the common electrode and the touch line on the protective layer.

In addition, although not shown in the drawings, the mask manufacturing process for the borderless in-cell type touch LCD device according to the present disclosure may include: a mask process of forming a black matrix on a lower substrate for forming a color filter; and a mask process of forming color filters between regions defined by the black matrix on the lower substrate.

In this manner, the borderless in-cell type touch LCD device according to the present disclosure can omit an existing mask process for forming a touch line by forming the touch line while forming the active layer, the source electrode, and the drain electrode, and omit an existing mask process for forming a touch line contact hole by forming the touch line contact hole while forming the drain contact hole, thereby reducing the number of masks in a manufacturing process required in the conventional art.

Meanwhile, a method of manufacturing the borderless in-cell type touch LCD device according to the present disclosure will be described below with reference to fig. 8A to 8H.

Fig. 8A to 8H are cross-sectional views illustrating a process of manufacturing a borderless in-cell type touch LCD device according to the present disclosure.

Fig. 9 is a diagram schematically illustrating an ESD path of a borderless in-cell type touch LCD device according to the present disclosure.

The bezel-less LCD device according to the present disclosure is characterized in that: the thin film transistor substrate is implemented as an upper substrate 101, and the color filter substrate is implemented as a lower substrate 151. That is, the frameless LCD device according to the present disclosure is characterized in that: unlike the conventional art, an upper substrate having a relatively large area is disposed above a lower substrate. Here, on the upper substrate 101, a thin film transistor as a switching element and various types of lines and electrodes are formed to define a pixel region (not shown).

First, as shown in fig. 8A, a nitride layer 103 is deposited on the entire surface of a transparent upper substrate 101 having a plurality of unit pixel regions defined thereon. Here, the nitride layer 103 may be made of any one selected from nitride-based insulating materials.

Here, the nitride layer 103 may improve screen display characteristics by blocking the appearance of a color, e.g., yellow, generated by electrode lines made of a metal material, e.g., copper (Cu), so that the yellow color is not displayed. That is, when the inversion structure is applied, the pixel display surface becomes the upper substrate 101 rather than the lower substrate 151 as in the conventional art, and thus the nitride-based insulating layer 103 is formed under the metal lines to improve the reflective brightness of the metal lines.

Next, after forming a first transparent conductive material layer (not shown) on the nitride layer 103, a large-area plate-shaped common electrode 105 is formed on the nitride layer 103 by etching the first transparent conductive material layer (not shown) using a photolithography technique. Here, as a material of the first transparent conductive layer (not shown), any one selected from transparent materials including Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO) is used.

Next, after depositing a first metal layer (not shown) on the upper substrate 101 including the common electrode 105 using a sputtering method, a gate line (not shown) and a gate electrode 107 vertically extending from the gate line (not shown) are formed by etching the first metal layer (not shown) using a photolithography technique. Here, at least one material selected from conductive metal materials including aluminum (Al), tungsten (W), copper (Cu), molybdenum (Mo), chromium (Cr), titanium (Ti), molybdenum-tungsten (MoW), molybdenum-titanium (MoTi), and copper/molybdenum-titanium (Cu/MoTi) is used as a material of the first metal layer (not shown).

Thereafter, as shown in fig. 8B, a gate insulating layer 108 is deposited on the nitride layer 103 including the gate electrode 107 and the common electrode 105. Here, the gate insulating layer 108 is made of, for example, silicon nitride (SiNx) or silicon oxide (SiO)₂) Is made of the insulating material of (1).

Next, an amorphous silicon layer (a-Si: H) (not shown) doped with an impurity (n + or p +) and an amorphous silicon layer (not shown) are sequentially stacked on the gate insulating layer 108. In this regard, the amorphous silicon layer (a-Si: H) doped with impurities (n + or p +) and the amorphous silicon layer may be deposited using a Chemical Vapor Deposition (CVD) method or other deposition methods.

Then, an active layer 109 and an ohmic contact layer 111 are formed on the gate insulating layer 108 formed on the gate electrode 107 by selectively etching the amorphous silicon layer (a-Si: H) (not shown) doped with impurities (n + or p +) and the amorphous silicon layer (a-Si: H) using a photolithography technique.

Next, as shown in fig. 8C, a second metal layer (not shown) covering both the active layer 109 and the ohmic contact layer 111 is formed on the gate insulating layer 108. Here, at least one material selected from conductive metal materials including aluminum (Al), tungsten (W), copper (Cu), molybdenum (Mo), chromium (Cr), titanium (Ti), molybdenum-tungsten (MoW), molybdenum-titanium (MoTi), and copper/molybdenum-titanium (Cu/MoTi) is used as a material of the second metal layer (not shown).

Next, a second metal layer (not shown) is selectively etched by using a photolithography technique to form a gate electrode 113 arranged to intersect the gate line (not shown), a source electrode 113a extending from the data line 113, and a drain electrode 113b spaced apart from the source electrode 113 a. In this regard, when the source and drain electrodes 113a and 113b are formed, a portion of the ohmic contact layer 111 thereunder is also etched, and thus the source and drain electrodes 113a and 113b are spaced apart from each other with respect to a channel region (not shown) of the active layer 109.

Further, at the same time as the data lines 113 are formed, touch lines 115 arranged in parallel to the data lines 113 to alternate with the data lines 113 are formed.

Thereafter, as shown in fig. 8D, a film made of silicon nitride (SiNx) or silicon oxide (SiO) as an inorganic insulating material is formed on the substrate including the source electrode 113a and the drain electrode 113b₂) The resulting protective layer 119.

Then, as shown in fig. 8E, a drain contact hole 121a for exposing a portion of the drain electrode 113b, and a common electrode contact hole 121b and a touch line contact hole 121c for exposing the common electrode 105 and the touch line 115, respectively, are simultaneously formed by selectively etching the protection layer 119 using a photolithography technique.

Next, as shown in fig. 8F, after forming a second transparent conductive material layer (not shown) on the protective layer 119, a plurality of pixel electrodes 125 and coupling lines 127 are formed on the protective layer 119 by etching the second transparent conductive material layer (not shown) using a photolithography technique. In this regard, any one material selected from transparent materials including Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO) is used as the material of the transparent conductive material layer.

Next, each pixel electrode 125 is electrically coupled to the drain electrode 113b through the drain contact hole 121a, and each coupling line 127 electrically couples the common electrode 105 and the touch line 115 through the common electrode contact hole 121b and the touch line contact hole 121 c.

In addition, although not shown in the drawings, an upper alignment layer (not shown) is formed on the protective layer 119 including the pixel electrodes 125 and the coupling lines 127, and thus a process of manufacturing an upper substrate for forming a thin film transistor array of the in-cell type touch LCD device according to the present disclosure is completed.

Thereafter, as shown in fig. 8G, a Black Matrix (BM)153 is formed on the lower substrate 151 attached to the thin film transistor substrate, i.e., the upper substrate 101, to be spaced apart from the upper substrate 101, to block light from being transmitted to a region other than the pixel region.

Next, a red color filter, a green color filter, and a blue color filter 155 are formed in the pixel region of the lower substrate 151. Here, the black matrix 153 is disposed on the color filter array substrate 151 between the red, green, and blue color filters 155.

Thereafter, when the lower substrate 151 is attached to the upper substrate 101, the black matrix 153 is arranged to overlap an area other than the pixel area of the upper substrate 101, for example, an area above the thin film transistor T, the gate line (not shown), and the data line 113.

Although not shown in the drawings, an upper alignment layer (not shown) is formed on the color filter 155 to align the liquid crystal in a certain direction, thereby completing the process of manufacturing the lower substrate.

Next, as shown in fig. 8H, a liquid crystal layer 161 is formed between the upper substrate 101 and the lower substrate 151, thereby completely manufacturing the in-cell type touch LCD device according to the embodiment of the present disclosure.

Fig. 9 is a diagram schematically illustrating an electrostatic discharge (ESD) path of a borderless in-cell touch LCD device according to an embodiment of the present disclosure.

As shown in fig. 9, in the in-cell type touch LCD device according to the embodiment of the present disclosure, a discharge path 195 for externally generated static electricity is implemented by a common electrode 105 and a ground line 181 of a Printed Circuit Board (PCB) coupled to the common electrode 105.

Meanwhile, an in-cell type touch LCD device according to further embodiments of the present disclosure will be described below with reference to fig. 10 and 11.

Fig. 10 is a cross-sectional view schematically illustrating a borderless in-cell type touch LCD device according to a further embodiment of the present disclosure.

Fig. 11 is a diagram schematically illustrating an ESD path of a borderless in-cell touch LCD device according to a further embodiment of the present disclosure.

Referring to fig. 10 and 11, the structure of a borderless in-cell touch LCD device according to a further embodiment of the present disclosure is almost the same as that of the borderless in-cell touch LCD device according to an embodiment of the present disclosure, and the only difference between the embodiments is that: a resistor 270 having several tens of k omega is additionally coupled to the PCB coupled to the in-cell type touch LCD device.

A borderless in-cell type touch LCD device according to a further embodiment of the present disclosure will be described below with reference to fig. 10 and 11. The thin film transistor substrate is implemented as an upper substrate 201, and the color filter substrate is implemented as a lower substrate 251. That is, unlike the conventional structure, the in-cell type touch LCD device according to the present disclosure is characterized in that: an upper substrate having a relatively large area is disposed above the lower substrate. Here, a thin film transistor as a switching element and various types of lines and electrodes are formed on an upper substrate 201 to define a pixel region (not shown).

In addition, a color filter layer (not shown) for displaying three primary colors, e.g., red (R), green (G), and blue (B), and a Black Matrix (BM) (not shown) for separating respective pixel regions (not shown) may be formed on the lower substrate 251. A lower polarizing plate (not shown) is formed on an outer surface of the lower substrate 251.

That is, on the upper substrate 201, there may be formed: a plurality of gate lines (not shown) and data lines (not shown) arranged horizontally and vertically and defining a plurality of pixel regions (not shown); a thin film transistor formed in an intersection region of the gate line and the data line (not shown) as a switching element, and a pixel electrode 225 formed in the pixel region.

In addition, when the LCD device is a vertical electric field type such as a Twisted Nematic (TN) type, a common electrode (not shown) is formed on the lower substrate 251, and when the LCD device is a horizontal electric field type such as an in-plane switching (IPS) or a Fringe Field Switching (FFS) type, a pixel electrode 225 and a common electrode 205 may be formed on the upper substrate 201.

In addition, a large-area common electrode 205 is formed on the upper substrate 201. The common electrode 205 is formed in the shape of a large-area plate.

Further, a plurality of gate lines (not shown) and data lines (not shown) each extending unidirectionally and spaced apart from each other in parallel are formed on the upper substrate 201.

In addition, a thin film transistor (not shown) is formed at an intersection of the gate line and the data line.

On the upper substrate 201, touch lines (not shown) are formed in parallel to data lines (not shown). Here, the data lines (not shown) and the touch lines (not shown) are alternately arranged in a Double Rate Drive (DRD) form.

Then, a protective layer 219 is formed over the entire surface of the substrate including the thin film transistor (not shown). Further, a drain contact hole (not shown) for exposing a portion of the drain electrode (not shown) and a common electrode contact hole (not shown) and a touch line contact hole (not shown) for exposing a portion of the common electrode 205 and a portion of the touch line, respectively, are formed in the protective layer 219.

Further, pixel electrodes 225 and coupling lines (not shown) are formed on the protective layer 219, wherein each pixel electrode 225 overlaps the common electrode 205 and is electrically coupled with the drain electrode through a drain contact hole, and wherein each coupling line (not shown) electrically couples the common electrode 205 with a touch line (not shown) through a common electrode contact hole (not shown) and a touch line contact hole (not shown).

Then, an upper alignment layer (not shown) is formed on the entire surface of the protective layer 219 including the pixel electrode 225 and the coupling line (not shown).

Meanwhile, a black matrix (not shown) for blocking light transmission to a region other than the pixel region is formed on the lower substrate 251.

In addition, a red color filter, a green color filter, and a blue color filter (not shown) are formed in the pixel region of the lower substrate 251. Here, a black matrix (not shown) is formed on the lower substrate 251 between a red color filter, a green color filter, and a blue color filter (not shown).

Meanwhile, when the upper substrate 201 and the lower substrate 251 are attached to each other, a black matrix (not shown) is disposed to overlap an area outside the pixel area of the upper substrate 201, for example, an area above a thin film transistor (not shown), a gate line (not shown), and a data line (not shown).

Further, although not shown in the drawings, a lower alignment layer (not shown) capable of aligning liquid crystals in a certain direction is formed on the rear surface of the lower substrate 201.

Meanwhile, the resistor 270 is additionally provided on a ground line 281, and the ground line 281 is provided on the PCB 310 coupled with a circuit unit (not shown) disposed on the upper substrate 201.

Further, a point silver portion 291 is formed on side surfaces of the upper substrate 201 and the lower substrate 251, and then the point silver portion 291 is coupled to a ground line 281. Here, an external ESD path 295 is formed through the common electrode 205 and the ground line 281.

Further, a transparent conductive layer 257 made of ITO is additionally formed on the rear surface of the lower substrate 251. Here, since ITO can be applied to ESD prevention, ESD prevention performance can be improved. In this case, external ESD path 297 is formed by transparent conductive layer 257, point silver portion 291, and ground line 281.

In this manner, when a data signal is supplied to the pixel electrode 225 through the thin film transistor, a fringe field is formed between the pixel electrode 225 and the large-area common electrode 205 to which a common voltage is supplied, so that liquid crystal molecules horizontally aligned between the upper substrate 201 and the lower substrate 251 are rotated due to dielectric anisotropy. Therefore, the transmittance of light passing through the pixel region changes according to the degree of rotation of the liquid crystal molecules, and thus a gray scale (gradation) can be realized.

As described above, the in-cell type touch LCD device according to the present disclosure can implement screen display and screen touch through the thin film transistor substrate having an area larger than that of the color filter substrate, thereby improving touch performance and ESD performance.

Furthermore, the present disclosure is advantageous in that: the high resistance conductive layer used for touch in the conventional art can be eliminated by employing a four-sided borderless design, thereby simplifying the manufacturing process and reducing the manufacturing cost.

Furthermore, the present disclosure is advantageous in that: a nitride-based insulating material is additionally disposed between the thin film transistor substrate and the gate line, so that a phenomenon of color development generated by an electrode line made of a metal material such as copper (Cu) may be prevented, thereby improving screen display characteristics.

Furthermore, the present disclosure is advantageous in that: the ITO may be additionally formed on the rear surface of the color filter substrate and may be used for ESD prevention, thereby improving ESD prevention characteristics.

The advantages of the present disclosure are: since the distance between the finger and the common electrode is reduced, the finger capacitance between the finger and the common electrode is increased, thereby improving the finger sensitivity, and increasing the contact area of the common electrode, thereby improving the touch sensitivity when sensing the finger touch.

Furthermore, the present disclosure is advantageous in that: a resistor is added to a ground line on the printed circuit board coupled to an ESD path of the panel, so that touch performance can be ensured and ESD characteristics can be improved even if ITO is applied to the rear surface of the color filter.

Further, in the conventional art, since the data line and the touch line are arranged in a structure overlapping each other, the touch line resistance increases, and a planarization layer should be substantially formed to reduce the touch line resistance. However, the present disclosure adopts a flip type double Data Rate Drive (DRD) structure in which a thin film transistor substrate having an area larger than that of a color filter substrate is disposed on the color filter substrate, i.e., a structure in which a data line and a touch line do not overlap each other, so that a process of manufacturing a planarization layer formed to prevent an increase in resistance of the touch line in the case of the conventional art can be omitted, thereby simplifying a manufacturing process and reducing manufacturing costs.

Furthermore, the present disclosure is advantageous in that: an existing mask process for forming the touch line may be omitted by forming the touch line while forming the active layer, the source electrode, and the drain electrode, and an existing mask process for forming the touch line contact hole may be omitted by forming the touch line contact hole while forming the drain contact hole, thereby reducing the number of masks in the manufacturing process required in the conventional art.

As described above, although the embodiments have been described with reference to the drawings, the present disclosure is not limited thereto.

It will be understood that terms such as "comprising," "including," or "having" are intended merely to indicate the presence of the stated features or elements, or combinations thereof, and are not intended to preclude the possibility that one or more other features or elements, or combinations thereof, will be present or added. Unless defined otherwise, all terms used herein including technical or scientific terms have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. Terms that are the same as terms defined in commonly used dictionaries should be interpreted as having the same meaning as a contextual meaning of the related art and not being interpreted as having an ideal or excessively formal meaning unless explicitly defined in the present specification.

As described above, the in-cell type touch LCD device according to the present disclosure can implement screen display and screen touch through the thin film transistor substrate, which has an area greater than that of the color filter substrate, thereby improving touch performance and ESD performance.

Further, the present disclosure is advantageous in that a high-resistance conductive layer used to implement a touch in the conventional art can be removed by employing a four-sided borderless design, thereby simplifying a manufacturing process and reducing manufacturing costs.

Further, the present disclosure is advantageous in that a nitride-based insulating material is additionally disposed between the thin film transistor substrate and the gate line, so that a phenomenon of color development generated by electrode lines made of a metal material, such as copper (Cu), can be prevented, thereby improving screen display characteristics.

Further, the present disclosure is advantageous in that ITO may be additionally formed on the rear surface of the color filter substrate and may be used for ESD prevention, thereby improving ESD prevention characteristics.

The advantages of the present disclosure are: as the distance between the finger and the common electrode is reduced, the finger capacitance between the finger and the common electrode is increased, thereby improving the sensitivity of the finger; and the contact area of the common electrode is increased, thereby improving the touch sensitivity when detecting a finger touch.

Further, the present disclosure is advantageous in that a resistor is added to a ground line on a printed circuit board coupled to an ESD path of a panel, so that touch performance of a substrate can be ensured even in the case where ITO is applied to a rear surface of a color filter, and ESD characteristics can be improved.

Further, in the conventional art, the touch line resistance is increased due to a structure in which the data line and the touch line are arranged to overlap each other, and the planarization layer is substantially formed to reduce the touch line resistance. However, the present disclosure adopts a flip-chip type double Data Rate Driving (DRD) structure in which a thin film transistor substrate having an area larger than that of a color filter substrate is disposed on the color filter substrate, i.e., a structure in which a data line and a touch line do not overlap each other, so that a process of manufacturing a planarization layer formed to prevent an increase in resistance of the touch line as in the case of the conventional art can be omitted, thereby simplifying a manufacturing process and reducing manufacturing costs.

Furthermore, the present disclosure has advantages in that: the existing mask process for forming the touch line may be omitted by forming the touch line while forming the active layer, the source electrode, and the drain electrode; and an existing mask process for forming the touch line contact hole may be omitted by forming the touch line contact hole at the same time as the drain contact hole, thereby reducing the number of masks in the manufacturing process required in the conventional art.

The above description is intended only to illustratively describe the technical spirit of the present disclosure, and those skilled in the art to which the present disclosure pertains may implement various modifications and alterations without departing from the essential characteristics of the present disclosure. Therefore, the embodiments disclosed in the present disclosure are only intended to describe the present disclosure, not to limit the technical spirit of the present disclosure, and the scope of the technical spirit of the present disclosure is not limited by the embodiments. The scope of the present disclosure should be defined by the appended claims, and all technical spirit of the appended claims and equivalents thereof should be construed as being included in the scope of the present disclosure.

Inventive concept

The invention provides the following inventive concepts:

1. an in-cell type touch liquid crystal display device, comprising:

a lower substrate;

an upper substrate disposed above the lower substrate to face the lower substrate, an area of the upper substrate being larger than an area of the lower substrate;

a common electrode disposed over the upper substrate;

gate and data lines disposed over the upper substrate and arranged to cross each other to define a pixel region;

a touch line arranged over the upper substrate in parallel to the data line;

a thin film transistor disposed at an intersection of the gate line and the data line;

a protective layer disposed over the upper substrate including the thin film transistor, the protective layer configured to expose a portion of each of the touch line and the common electrode and a portion of a drain electrode of the thin film transistor;

a pixel electrode disposed over the protective layer and coupled to the drain electrode; and

a coupling line coupled to the touch line and the common electrode.

2. The in-cell type touch liquid crystal display device according to inventive concept 1, further comprising:

a nitride-based insulating layer disposed above the upper substrate and below the common electrode.

3. The in-cell type touch liquid crystal display device according to inventive concept 1, wherein the common electrode is formed in a shape of a large-area plate.

4. The in-cell type touch liquid crystal display device according to inventive concept 1, wherein the common electrode is formed on an entire surface of a pixel region formed by the gate lines and the data lines crossing each other.

5. The in-cell touch liquid crystal display device according to inventive concept 1, wherein the lower substrate is a color filter substrate, and the upper substrate is a thin film transistor substrate.

6. The in-cell type touch liquid crystal display device according to inventive concept 1, wherein a static discharge path is formed through the common electrode and a ground line of a printed circuit board coupled to the common electrode.

7. The in-cell type touch liquid crystal display device according to inventive concept 6, further comprising:

a resistor disposed on the ground line of the printed circuit board forming the electrostatic discharge path.

8. The in-cell type touch liquid crystal display device according to inventive concept 1, further comprising:

a transparent conductive layer disposed on a rear surface of the lower substrate.

9. The in-cell type touch liquid crystal display device according to inventive concept 8, wherein an electrostatic discharge path is formed through the transparent conductive layer, the point silver portion, and the ground line.

10. A method of manufacturing an in-cell touch liquid crystal display device, comprising:

providing a lower substrate and an upper substrate disposed above the lower substrate to face the lower substrate, the upper substrate having an area larger than that of the lower substrate;

forming a common electrode over the upper substrate;

forming gate and data lines arranged to cross each other to define a pixel region over the upper substrate;

forming a touch line arranged over the upper substrate in parallel to the data line;

forming a thin film transistor at an intersection of the gate line and the data line;

forming a protective layer over the upper substrate including the thin film transistor, the protective layer configured to expose a portion of each of the touch line and the common electrode and a portion of a drain electrode of the thin film transistor;

forming a pixel electrode coupled to the drain electrode over the protective layer; and

forming a coupling line coupled to the touch line and the common electrode.

11. The method according to inventive concept 10, further comprising:

a nitride-based insulating layer is formed over the upper substrate and under the common electrode.

12. The method according to inventive concept 10, wherein the common electrode is formed in a shape of a large-area plate.

13. The method of inventive concept 10, wherein the common electrode is formed on an entire surface of a pixel region formed where the gate line and the data line cross each other.

14. The method of inventive concept 10, wherein the lower substrate is a color filter substrate and the upper substrate is a thin film transistor substrate.

15. The method according to inventive concept 10, wherein an electrostatic discharge path is formed through the common electrode and a ground line of a printed circuit board coupled to the common electrode.

16. The method of inventive concept 15, further comprising:

a resistor is disposed on the ground line of the printed circuit board forming the electrostatic discharge path.

17. The method according to inventive concept 10, further comprising:

a transparent conductive layer is formed on a rear surface of the lower substrate.

18. The method according to inventive concept 17, wherein an electrostatic discharge path is formed through the transparent conductive layer, the point silver portion, and the ground line.

19. The method of inventive concept 10, wherein the forming of the pixel electrode coupled to the drain electrode over the protection layer and the forming of the coupling line coupled to the touch line and the common electrode are simultaneously performed through the same mask process.

20. The method of inventive concept 10, wherein the forming of the data line and the forming of the touch line disposed over the upper substrate in parallel to the data line are simultaneously performed through the same mask process.