1. An infrared thermal reaction type control panel, comprising:

a first conductor layer having a temperature coefficient of resistance;

a second conductor layer having a temperature coefficient of resistance;

an insulating layer between the first and second conductor layers for isolating the first and second conductor layers and having heat conduction function;

a plurality of pairs of first electrodes disposed on the first conductive layer, wherein a first predetermined voltage or a first predetermined current is sequentially applied to the plurality of pairs of first electrodes to detect a resistance between each pair of first electrodes, thereby determining a position of a heat source in a first direction; and

and a plurality of pairs of second electrodes disposed on the second conductive layer, wherein a second predetermined voltage or a second predetermined current is sequentially applied to the plurality of pairs of second electrodes to detect a resistance between each pair of second electrodes, thereby determining a position of the heat source in a second direction.

2. The infrared thermal reaction control panel of claim 1, wherein the material of the first electrodes and the second electrodes comprises vanadium.

3. The infrared thermal reaction control panel of claim 1, wherein the first conductive layer and the second conductive layer are made of vanadium oxide.

4. The infrared thermal reaction control panel of claim 1, further comprising:

a driver coupled to the pairs of first electrodes for sequentially providing the first preset voltage or the first preset current to each pair of first electrodes; and

a first detector coupled to the first electrodes for detecting a resistance between each pair of first electrodes.

5. The infrared thermal reaction control panel of claim 4, further comprising a second detector coupled to the pairs of second electrodes for detecting a resistance between each pair of second electrodes, wherein the driver is coupled to the pairs of second electrodes for sequentially providing the second predetermined voltage or the second predetermined current to each pair of second electrodes.

6. The infrared thermal reaction control panel of claim 4, wherein the first detector is coupled to the plurality of pairs of second electrodes for detecting the resistance between each pair of second electrodes.

7. The infrared thermal reaction control panel of claim 1, further comprising:

a protective layer having a heat conducting function; and

a substrate;

the first conductor layer is between the protection layer and the insulation layer, and the second conductor layer is between the insulation layer and the substrate.

8. The infrared thermal reaction control panel of claim 7, wherein the material of the passivation layer comprises silicon dioxide, silicon nitride or aluminum oxide.

9. The infrared thermal reaction control panel of claim 7, wherein the substrate is a transparent material.

10. The infrared thermal reaction control panel of claim 1, wherein the material of the insulating layer comprises vanadium oxide.

Background

Touch panels are widely used in various electronic devices, and fig. 1 shows a conventional capacitive touch panel, which includes a plurality of traces (trace)10 arranged in a horizontal direction and a plurality of traces 12 arranged in a vertical direction, and the capacitive touch panel determines whether a touch is made by sensing a change in capacitance at an intersection of the traces 10 and 12. However, the capacitive touch panel can only detect the touch position of the conductor, but cannot detect the touch position of the non-conductor. In addition, the capacitive touch panel needs to sense a conductor through a trace, and in the manufacturing process, the trace needs to be formed through etching, once a problem (such as over-etching) occurs in one of the traces, the touch panel is regarded as a defective product, and as the size of the panel increases or the resolution increases, the number of the traces also increases, so that the probability of occurrence of a defective trace increases, and the yield of the touch panel decreases.

Therefore, a touch panel capable of detecting a non-conductor touch and having a high yield is desired in the industry.

Disclosure of Invention

One objective of the present invention is to provide an infrared thermal reaction type control panel, which can sense the position of a heat source on the infrared thermal reaction type control panel.

According to the present invention, an infrared thermal reaction type control panel comprises a first conductive layer and a second conductive layer with temperature coefficient of resistance and an insulating layer for isolating the first conductive layer and the second conductive layer. The first conductor layer is provided with a plurality of pairs of first electrodes, and a first preset voltage or a first preset current is sequentially applied to the plurality of pairs of first electrodes to detect the resistance value between each pair of first electrodes so as to judge the position of the heat source in a first direction. The second conductor layer is provided with a plurality of pairs of second electrodes, and a second preset voltage or a second preset current is sequentially applied to the plurality of pairs of second electrodes to detect the resistance value between each pair of second electrodes so as to judge the position of the heat source in a second direction.

The infrared thermal reaction type control panel of the invention is judged by sensing temperature or heat, so that the infrared thermal reaction type control panel can be operated by using a non-conductor object. Furthermore, the pairs of first electrodes and the pairs of second electrodes are formed by sputtering or evaporation, so that the infrared thermal reaction type control panel does not need to be etched, and has higher yield.

Drawings

Fig. 1 shows a conventional capacitive touch panel.

FIG. 2 shows an embodiment of an infrared thermal reaction control panel according to the present invention.

FIG. 3 shows a first embodiment of the infrared thermal reaction type control panel of the present invention for sensing the position of a heat source.

FIG. 4 shows a second embodiment of the infrared thermal reaction type control panel of the present invention for sensing the position of the heat source.

Description of reference numerals: 10-trace; 12-traces; 20-infrared thermal reaction type control panel; 22-a protective layer; 24-a first conductor layer; 2411-a first electrode; 2412-a first electrode; 2421-a first electrode; 2422-a first electrode; 2431-a first electrode; 2432-a first electrode; 2441-a first electrode; 2442-a first electrode; 26-an insulating layer; 28-a second conductor layer; 2811-a second electrode; 2812-a second electrode; 2821 — a second electrode; 2822 — a second electrode; 2831 — a second electrode; 2832 — a second electrode; 2841-a second electrode; 2842-a second electrode; 2851 — a second electrode; 2852 — a second electrode; 2861 — a second electrode; 2862 — a second electrode; 30-a substrate; 32-a driver; 34-a detector; 36-a switching circuit; 38-a switching circuit; 40-a detector; 42-a switching circuit; 44-a switching circuit; 46-a switching circuit; 48-switching circuit.

Detailed Description

Fig. 2 shows an infrared thermal reaction control panel 20 of the present invention, which includes a protection layer 22, a first conductive layer 24, an insulating layer 26, a second conductive layer 28 and a substrate 30. The passivation layer 22 is used to protect the first conductive layer 24 from being directly touched by a heat source, preferably, the passivation layer 22 has a heat conduction function to transfer heat emitted from the heat source to the interior of the infrared thermal reaction control panel 20 for improving sensitivity, and the material of the passivation layer 22 can be, but is not limited to, silicon dioxide (SiO)₂) Silicon nitride (Si)₃N₄) Or aluminum oxide (Al)₂O₃). The heat source may be a finger or other object that can dissipate heat. The first conductive layer 24 is between the passivation layer 22 and the insulating layer 26, the first conductive layer 24 has a Temperature Coefficient of Resistance (TCR), so that the Resistance of the first conductive layer 24 varies with Temperature or heat, and the material of the first conductive layer 24 can be but is not limited to Vanadium Oxide (VO)_xWhere x is a positive integer), a plurality of pairs of first electrodes 2411 and 2412, 2421 and 2422, 2431 and 2432, 2441 and 2442 are disposed on the first conductive layer 24, as shown in fig. 3, the first electrodes may be made of, but not limited to, Vanadium (Vanadium), and may be formed by sputtering or evaporation. The insulating layer 26 is disposed between the first conductive layer 24 and the second conductive layer 28 for isolating the first conductive layer 24 and the second conductive layer 28, the insulating layer 26 has a thermal conductivity for transferring heat to the second conductive layer 28 to improve sensitivity, and the insulating layer 26 may be made of a materialBut is not limited to, Vanadium Oxide (VO) having high resistance_x). The second conductive layer 28 is between the insulating layer 26 and the substrate 30, the second conductive layer 28 has a temperature coefficient of resistance, so the resistance of the second conductive layer 28 varies with temperature or heat, and the material of the second conductive layer 28 can be, but is not limited to, Vanadium Oxide (VO)_x) The second conductive layer 28 is provided with a plurality of pairs of second electrodes 2811 and 2812, 2821 and 2822, 2831 and 2832, 2841 and 2842, 2851 and 2852, 2861 and 2862, as shown in fig. 3, the material of the second electrodes may be, but is not limited to, vanadium, and the second electrodes may be formed by sputtering or vapor deposition. The substrate 30 may be, but is not limited to, a transparent material, for example, glass is used as the substrate 30.

FIG. 3 shows a first embodiment of the infrared thermal reaction control panel 20 of the present invention for sensing the position of a heat source. The switching circuit 36 is connected between the driver 32 and the plurality of first electrodes 2411, 2421, 2431, 2441 and sequentially switches the first preset current I1 or the first preset voltage V1 provided by the driver 32 to the first electrodes 2411, 2421, 2431, 2441, the switching circuit 38 is connected between the plurality of first electrodes 2412, 2422, 2432, 2442 and the ground GND, sequentially connects the first electrodes 2412, 2422, 2432, 2442 to the ground GND, the switching circuit 42 is connected between the driver 32 and the plurality of second electrodes 2811, 2821, 2831, 2841, 2851, 2861, and sequentially switches the second preset current I2 or the second preset voltage V2 provided by the driver 32 to the second electrodes 2811, 2821, 2831, 2841, 2851, 2861, the switching circuit 44 is connected between the plurality of second electrodes 2812, 2822, 2832, 2842, 2852, 2862 and the ground GND, and sequentially connects the second electrodes 2812, 2822, 2832, 2842, 2852, 2862 to the ground GND. The first predetermined current I1 and the second predetermined current I2 may be the same or different, and the first predetermined voltage V1 and the second predetermined voltage V2 may be the same or different. Specifically, when the switching circuit 36 connects the driver 32 to the first electrode 2411 of the first pair of first electrodes, the switching circuit 38 also connects the first electrode 2412 of the first pair of first electrodes to the ground GND, and the first preset current I1 or the first preset voltage V1 provided by the driver 32 is applied to the first electrode 2411 to generate the voltage V3 or the current I3, since the voltage V3 or the current I3 is determined by the resistance between the first electrodes 2411 and 2412 provided by the first conductive layer 24, the resistance value provided by the first conductive layer 24 varies with temperature or heat, so the voltage V3 or the current I3 also varies with temperature or heat, the detector 34 detects the voltage V3 or the current I3 to generate a detection signal S1, and the infrared heat responsive control panel 20 can determine the resistance value between the first pair of first electrodes 2411 and 2412 by the detection signal S1, and further determine whether a heat source is present between the first pair of first electrodes 2411 and 2412. After detecting the resistance between the first pair of first electrodes 2411 and 2412, the switching circuit 36 connects the driver 32 to the first electrodes 2421, 2431 and 2441 in sequence, and the switching circuit 38 connects the first electrodes 2422, 2432 and 2442 to the ground GND in sequence, so as to detect the resistance between the second pair of first electrodes 2421 and 2422, the third pair of first electrodes 2431 and 2432 and the fourth pair of first electrodes 2441 and 2442 to determine the position of the heat source in the first direction. Assuming that the heat source is located between the first pair of first electrodes 2411 and 2412, the resistance of the area of the first conductive layer 24 corresponding to the heat source is different from the resistance of the other areas, so that the resistance between the first pair of first electrodes 2411 and 2412 is different from the resistance between the other pairs of first electrodes, and the infrared thermal reaction type control panel 20 can determine that the heat source is located between the first pair of first electrodes 2411 and 2412 according to the detection result of the resistance. Similarly, the switching circuit 42 sequentially connects the driver 32 to the second electrodes 2811, 2821, 2831, 2841, 2851 and 2861, and the switching circuit 44 sequentially connects the second electrodes 2812, 2822, 2832, 2842, 2852 and 2862 to the ground GND, the detector 40 detects the voltage V4 or the current I4 of each pair of the second electrodes 2811 and 2812, 2821 and 2822, 2831 and 2832, 2841 and 2842, 2851 and 2852, 2861 and 2862 to generate the detection signal S2, so as to determine the resistance value between each pair of the second electrodes 2811 and 2812, 2821 and 2822, 2831 and 2832, 2841 and 2842, 2851 and 2852, 2861 and 2862, and further determine the position of the heat source in the second direction. The first set of switches 36 and 38 and the second set of switches 42 and 44 may be operated simultaneously, or one set may be operated after the other set is completed. In the embodiment of fig. 3, the first direction and the second direction are a vertical direction and a horizontal direction, respectively, and in other embodiments, the first direction and the second direction may be directions other than vertical and horizontal directions.

In the embodiment of fig. 3, a driver 32 provides a first predetermined current I1 or a first predetermined voltage V1 to at most pairs of first electrodes and provides a second predetermined current I2 or a second predetermined voltage V2 to at most pairs of second electrodes, and two detectors 34 and 40 respectively detect voltages or currents of the pairs of first electrodes and voltages or currents of the pairs of second electrodes, but in other embodiments, two drivers may provide predetermined currents I1 and I2 or predetermined voltages V1 and V2 to the pairs of first electrodes and the pairs of second electrodes, or one detector detects voltages or currents of the pairs of first electrodes and the pairs of second electrodes. FIG. 4 shows a second embodiment of the infrared thermal reaction type control panel 20 for sensing the position of a heat source according to the present invention, which comprises the same circuit as the circuit of FIG. 3, the first conductor layer 24, a plurality of pairs of first electrodes 2411 and 2412, 2421 and 2422, 2431 and 2432, 2441 and 2442, the second conductor layer 28, a plurality of pairs of second electrodes 2811 and 2812, 2821 and 2822, 2831 and 2832, 2841 and 2842, 2851 and 2852, 2861 and 2862, the driver 32 and the detector, wherein the switching circuit 46 is connected to the driver 32, the plurality of first electrodes 2411, 2431, 2441 and the plurality of second electrodes 2811, 2821, 2831, 2841, 2851 and 2861, and sequentially switches the preset current I1 or the preset voltage V1 provided by the driver 32 to the first electrodes 2411, 2431, 24241, and the second electrodes 2411, 2821, 2831, 2841, 2851, 2832, 2842, 2432, 2411, 2431, 24241, 2432, 2411, 2431, 2842, 2832, and the plurality of the electrodes, 2852. 2862 and ground GND, and sequentially connects the first electrodes 2412, 2422, 2432, 2442 and the second electrodes 2812, 2822, 2832, 2842, 2852, 2862 to the ground GND, the detector 34 detects the voltage V3 or the current I3 of the pairs of first electrodes 2411 and 2412, 2421 and 2422, 2431 and 2432, 2441 and 2442 and the pairs of second electrodes 2811 and 2812, 2821 and 2822, 2831 and 2832, 2841 and 2842, 2851 and 2852, 2861 and 2862 to determine the heat source position.

The foregoing description of the preferred embodiments of the present invention has been presented for purposes of illustration and description, and is not intended to limit the invention to the precise form disclosed, and modifications and variations are possible in light of the above teachings or may be acquired from practice of the embodiments of the invention, which are presented for purposes of illustration of the principles of the invention and of design choice and description for various embodiments that will be recognized by those skilled in the art and are intended to be within the scope of the appended claims and their equivalents.