1. A system for obtaining a threshold voltage of a flash memory, comprising:

a control unit for generating a plurality of pieces of control information serving to change actual data information of the flash memory according to the measured voltage and the target data information;

the FPGA unit is used for receiving and registering the control information, integrating the control information into a control instruction, and enabling the flash memory to write in the control instruction to generate corresponding actual data information;

the FPGA unit can read the actual data information and feed the actual data information back to the control unit, and the control unit can judge whether the measured voltage is the threshold voltage according to the actual data information and the target data information.

2. The system for obtaining threshold voltages of claim 1, wherein the actual data information and the target data information each include a number of memory cells with data 0 and/or a number of memory cells with data 1.

3. An information transmission method for obtaining threshold voltage is used for transmitting information in the process of obtaining threshold voltage of a flash memory, and is characterized by comprising the following steps:

s1, receiving and registering control information, integrating the control information into a control instruction, wherein the control information is generated by a control unit according to the measured voltage and target data information;

s2, sending the control command to the flash memory, and enabling the flash memory to write the control command to generate corresponding actual data information;

and S3, feeding back the actual data information to a control unit so that the control unit can judge whether the measured voltage is a threshold voltage according to the actual data information and the target data information.

4. The information delivery method of claim 3, wherein in step S1, the control command comprises a data command for changing flash data and a configuration command for changing flash word line voltage.

5. The information transmission method for obtaining threshold voltage according to claim 4, wherein step S2 includes the following sub-steps:

s21, sending a data instruction to the flash memory, and writing the data instruction into the flash memory to change the data in the flash memory;

and S22, sending the configuration command to the flash memory, and writing the configuration command into the flash memory to adjust the word line voltage configured in the flash memory into a measurement voltage value, so that the data in the flash memory is represented as actual data information.

6. The information transmission method of claim 3, wherein when the control information includes control information corresponding to a plurality of flash memories, the step S1 includes the following sub-steps:

s11, receiving and registering control information;

and S12, distinguishing and integrating the control information according to the attribution of the flash memory, and respectively integrating the control information into complete executable control instructions.

7. The method as claimed in claim 6, wherein the control information comprises a check code or a unique identification code or a number corresponding to the flash memory.

8. An information transfer apparatus for performing the information transfer method of threshold voltage acquisition of any one of claims 3 to 7, comprising an FPGA unit, the FPGA unit comprising:

the register integration module is used for receiving and registering the control information generated by the control unit and integrating the control information into a control instruction;

the read-write module is connected with the register integration module through the bus module and is used for receiving the control instruction from the register integration module and sending the control instruction to the write-in flash memory;

the analog-to-digital conversion module is used for acquiring the voltage of the FPGA unit and the voltage of the flash memory and converting the voltages into digital signals;

the read-write module can acquire actual data information in the flash memory and send the actual data information to the register integration module through the bus module, the register integration module can feed back the actual data information acquired by the read-write module from the flash memory to the control unit, and the control unit can judge whether the measured voltage is the threshold voltage according to the actual data information and the target data information.

9. An apparatus comprising a processor and a memory, said memory storing computer readable instructions which, when executed by said processor, perform the steps of the method of any of claims 3 to 7.

10. A storage medium having a computer program stored thereon, wherein the computer program, when executed by a processor, performs the steps of the method according to any of claims 3-7.

Background

The memory cell of the Nor Flash memory is a floating gate transistor, and data storage of "0" and "1" is mainly realized by changing the threshold voltage (Vth) of the memory cell. That is, the threshold voltage (Vth) is a threshold voltage for distinguishing Nor Flash memory data 1 from 0, where data of voltages higher than Vth is defined as "0" and data of voltages lower than Vth is defined as "1".

The threshold voltage can be used as an index parameter for judging the data retention performance of the flash memory, and the degree of interference of factors such as read interference, erasing interference and the like on the flash memory can be judged according to the deviation of the threshold voltage. Therefore, an accurate and efficient threshold voltage acquisition method is particularly important.

The threshold voltage of the flash memory is obtained by changing the Read word line voltage and then looking up the threshold flash memory voltage for changing the Read data from 0 to 1 or from 1 to 0 as the threshold voltage (Vth) of the memory cell.

In a conventional method for directly controlling a flash memory to test and obtain a threshold voltage, an MCU first sends a series of configuration instructions to the flash memory to obtain the threshold voltage, including entering a test mode, writing a word line voltage, resetting, entering a high performance mode, fast read, and the like.

In view of the above problems, no effective technical solution exists at present.

Disclosure of Invention

An object of the embodiments of the present application is to provide a system, a method, an apparatus, a device and a storage medium for obtaining a threshold voltage, which ensure that an operation instruction sent by a control unit to a flash memory can be executed orderly and smoothly to obtain the threshold voltage of the flash memory smoothly.

In a first aspect, an embodiment of the present application provides a system for obtaining a threshold voltage, which is used to obtain a threshold voltage of a flash memory, and includes:

a control unit for generating a plurality of pieces of control information serving to change actual data information of the flash memory according to the measured voltage and the target data information;

the FPGA unit is used for receiving and registering the control information, integrating the control information into a control instruction, and enabling the flash memory to write in the control instruction to generate corresponding actual data information;

the FPGA unit can read the actual data information and feed the actual data information back to the control unit, and the control unit can judge whether the measured voltage is the threshold voltage according to the actual data information and the target data information.

The system for acquiring the threshold voltage, wherein the actual data information and the target data information both include the number of memory cells with data of 0 and/or the number of memory cells with data of 1.

In a second aspect, an embodiment of the present application provides an information transferring method for obtaining a threshold voltage, which is used for transferring information in a process of obtaining a threshold voltage of a flash memory, and includes the following steps:

s1, receiving and registering control information, integrating the control information into a control instruction, wherein the control information is generated by a control unit according to the measured voltage and target data information;

s2, sending the control command to the flash memory, and enabling the flash memory to write the control command to generate corresponding actual data information;

and S3, feeding back the actual data information to a control unit so that the control unit can judge whether the measured voltage is a threshold voltage according to the actual data information and the target data information.

In the information transfer method for obtaining the threshold voltage, in step S1, the control command includes a data command for changing flash data and a configuration command for changing a word line voltage of the flash memory.

The information transmission method for obtaining the threshold voltage, wherein the step S2 includes the following sub-steps:

s21, sending a data instruction to the flash memory, and writing the data instruction into the flash memory to change the data in the flash memory;

and S22, sending the configuration command to the flash memory, and writing the configuration command into the flash memory to adjust the word line voltage configured in the flash memory into a measurement voltage value, so that the data in the flash memory is represented as actual data information.

In the information transfer method for obtaining the threshold voltage, when the control information includes control information corresponding to a plurality of flash memories, the step S1 includes the following sub-steps:

s11, receiving and registering control information;

and S12, distinguishing and integrating the control information according to the attribution of the flash memory, and respectively integrating the control information into complete executable control instructions.

The information transmission method for obtaining the threshold voltage comprises the steps that the control information comprises a check code or a unique identification code or a serial number corresponding to the flash memory.

In a third aspect, an embodiment of the present application provides an information transfer apparatus for executing the information transfer method for obtaining the threshold voltage, including an FPGA unit, where the FPGA unit includes:

the register integration module is used for receiving and registering the control information generated by the control unit and integrating the control information into a control instruction;

the read-write module is connected with the register integration module through the bus module and is used for receiving the control instruction from the register integration module and sending the control instruction to the write-in flash memory;

the analog-to-digital conversion module is used for acquiring the voltage of the FPGA unit and the voltage of the flash memory and converting the voltages into digital signals;

the read-write module can acquire actual data information in the flash memory and send the actual data information to the register integration module through the bus module, the register integration module can feed back the actual data information acquired by the read-write module from the flash memory to the control unit, and the control unit can judge whether the measured voltage is the threshold voltage according to the actual data information and the target data information.

In a fourth aspect, embodiments of the present application further provide an apparatus, including a processor and a memory, where the memory stores computer-readable instructions, and when the computer-readable instructions are executed by the processor, the apparatus performs the steps in the method as provided in the first aspect.

In a fifth aspect, embodiments of the present application further provide a storage medium, on which a computer program is stored, where the computer program runs the steps in the method provided in the above first aspect when executed by a processor.

As can be seen from the above, embodiments of the present application provide a threshold voltage obtaining system, a transmission method, an apparatus, a device, and a storage medium, where the obtaining system sets an FPGA unit as an intermediate layer to receive and register control information generated by a control unit, so that the control information is integrated into a complete control instruction and then is sent to be written into a flash memory, thereby implementing data writing and data obtaining in the flash memory orderly and continuously, and avoiding problems of instruction execution errors and missed execution in the flash memory when obtaining a threshold voltage of the flash memory.

Drawings

Fig. 1 is a schematic structural diagram of a system for obtaining a threshold voltage according to an embodiment of the present disclosure.

Fig. 2 is a flowchart of an information transfer method for obtaining a threshold voltage according to an embodiment of the present disclosure.

Fig. 3 is a schematic structural diagram of an information delivery apparatus for obtaining a threshold voltage according to an embodiment of the present disclosure.

Fig. 4 is a schematic structural diagram of embodiment 1 of a system for obtaining a threshold voltage according to an embodiment of the present application.

Fig. 5 is a schematic structural diagram of an electronic device according to an embodiment of the present application.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present application without making any creative effort, shall fall within the protection scope of the present application.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.

In a first aspect, please refer to fig. 1, in which fig. 1 is a system for obtaining a threshold voltage of a flash memory according to some embodiments of the present application, including:

a control unit for generating a plurality of pieces of control information serving to change actual data information of the flash memory according to the measured voltage and the target data information;

the FPGA unit is used for receiving and registering the control information, integrating the control information into a control instruction, and enabling the flash memory to write the control instruction to generate corresponding actual data information;

the FPGA unit can read the actual data information and feed the actual data information back to the control unit, and the control unit can judge whether the measured voltage is the threshold voltage according to the actual data information and the target data information.

Specifically, when the control unit analyzes that the measured voltage is not the threshold voltage, the value of the measured voltage needs to be adjusted to issue new control information for re-measurement, and the accurate threshold voltage is directly obtained.

More specifically, adjusting the measurement voltage includes both increasing and decreasing the measurement voltage; the adjustment mode of the measured voltage is selected based on the comparison condition of the actual data information and the target data information.

More specifically, the adjustment amount of the measurement voltage may be equal value adjustment, and may also be adjusted by using a least square method, so as to accurately obtain the threshold voltage.

According to the threshold voltage acquisition system, the FPGA unit arranged as the middle layer receives and registers the control information generated by the control unit, the control information can be collected and arranged as the message center, the FPGA unit arranges the control information into the control command capable of being completely executed, and then the control command is packaged and sent to the flash memory, so that data writing and data acquisition are orderly and continuously completed in the flash memory, and the problems of command execution error and missed execution are avoided.

In some preferred embodiments, the control unit may generate the plurality of pieces of control information intermittently or continuously according to actual operation conditions and loads.

In some preferred embodiments, control information generated based on the target data information is used to change write data of the flash memory; the control information generated based on the measured voltage is used to change the voltage in the configured environment of the flash memory so that the written data appears as actual data information.

In some preferred embodiments, the FPGA unit may intermittently or continuously receive control information from the control unit and then temporarily register the control information.

Specifically, when a plurality of pieces of control information registered by the FPGA unit include control information for changing the circulation requirement of actual data information of one flash memory, the FPGA unit integrates and packages the control information for changing the circulation requirement of the actual data information of one flash memory into a series of control instructions, then sends the integrated and packaged instructions to the flash memory, executes write-in control instructions on the flash memory, and changes the data and configuration environment of the flash memory so as to change the actual data information of the flash memory.

In some preferred embodiments, after the control command is completely written in the flash memory, the FPGA unit reads stable actual data information that has changed in the flash memory, then sorts and feeds back the actual data information to the control unit, and the unit to be controlled analyzes the actual data information.

In some preferred embodiments, the control unit receives and analyzes actual data information, and if the actual data information is consistent with the target data information, the actual data information represents a voltage set according to a measurement voltage in a current flash memory configuration environment, so that the actual data information displayed by write data in the flash memory can be matched with the target data information, that is, if the write data can be normally represented under the measurement voltage, the value of the measurement voltage is a threshold voltage of the flash memory; on the contrary, if the actual data information is inconsistent with the target information, the written data cannot be normally represented under the measurement voltage, the value of the measurement voltage is not the threshold voltage of the flash memory, and the measurement voltage needs to be changed for measurement again, so that the threshold voltage of the flash memory is directly obtained.

In some preferred embodiments, if the control unit analyzes that the current measured voltage is not the threshold voltage, the control unit may set new target data information to generate control information about the write data, may generate control information for only recording the current write data without changing the target data information, and may not generate control information produced based on the target data information; specifically, in the first case, setting new target data information can give a specific meaning to the target data information for data recording, such as recording the current cycle, generation time, and the like, without affecting the acquisition of the threshold voltage; in the second/third situation, the target data information is not changed, and the generated control information is used for changing the voltage in the flash memory configuration environment to acquire the threshold voltage of the flash memory as soon as possible, so that the flash memory writing frequency can be effectively reduced.

In some preferred embodiments, the actual data information and the target data information each include a number of storage units of data 0 and/or a number of storage units of data 1.

Specifically, the written data in the flash memory is reflected by the data 1 or 0 of the memory cell in the written address, and the number of data 1 and 0 in the actual data information should be the same as the number of data 1 and 0 in the target data information under the threshold voltage; therefore, the logic of analyzing whether the "analyzing actual data information matches the target data information" in step S5 is "whether the number of data of 1 and/or 0 included in the analyzing actual data information matches the number of data of 1 and/or 0 included in the target data information", where the number of data of the former 1 is compared with the number of data of the latter 1, and the number of data of the former 0 is compared with the number of data of the latter 0; and when the number of data in the actual data information is consistent with that in the target data information, the data written in the flash memory under the measurement voltage is normal, and the measurement voltage is the threshold voltage.

Specifically, when the measured voltage is not the threshold voltage and needs to be adjusted, taking the comparison of 1 data number as an example, when the number of data of 1 in the actual data information is more than that of 1 in the target data information, the measured voltage is smaller than the threshold voltage, so that the number of data of 1 in the data is more than expected, and therefore, the measured voltage needs to be increased to perform the re-measurement, whereas, when the number of data of 1 in the actual data information is less than that of 1 in the target data information, the measured voltage is decreased.

In some preferred embodiments, the flash memory is more than one. Specifically, the FPGA unit can simultaneously or intermittently complete instruction sending and/or data acquisition of more than one flash memory, so that the system can be simultaneously suitable for acquiring threshold voltages of more than one flash memory, and has the characteristic of wide application range.

In some preferred embodiments, when there are multiple flash memories, the FPGA unit may integrate multiple control commands corresponding to different flash memories, and may write the control commands into the corresponding flash memories and read actual data information in the corresponding flash memories.

Specifically, when there are a plurality of flash memories, the control unit may generate control information corresponding to the plurality of flash memories simultaneously or sequentially, and may generate the control information continuously or intermittently; specifically, the sequentially generated control information represents that the control unit first completes the acquisition of the threshold voltage of one flash memory and then performs the acquisition of the threshold voltage of the next flash memory; the simultaneous generation of the control information represents that the control unit can simultaneously acquire the threshold voltages of the plurality of flash memories; in the present embodiment, the control unit preferably generates control information corresponding to a plurality of flash memories at the same time.

More specifically, based on the control unit preferably generating control information corresponding to a plurality of flash memories simultaneously, the FPGA unit receives the control information about the different flash memories generated by the control unit, then allocates the control information, integrates and packages the control information into control instructions corresponding to the different flash memories, and sends the integrated control instructions to the corresponding flash memories for data writing.

More specifically, the FPGA can simultaneously read actual data information in the plurality of flash memories, and the actual data information is fed back and sent to the control unit, and the control unit completes analysis of the actual data information.

In some preferred embodiments, the control unit is an mcu (microcontroller unit), i.e., a micro control unit.

In a second aspect, please refer to fig. 2, fig. 2 is an information transferring method for obtaining threshold voltage in some embodiments of the present application, for transferring information in a process of obtaining threshold voltage of a flash memory, including the following steps:

s1, receiving and registering control information, integrating the control information into a control instruction, and generating the control information by the control unit according to the measured voltage and the target data information;

s2, sending the control command to the flash memory, and enabling the flash memory to write the control command to generate corresponding actual data information;

and S3, feeding back the actual data information to the control unit so that the control unit can judge whether the measured voltage is the threshold voltage according to the actual data information and the target data information.

The information transmission method for obtaining the threshold voltage can receive and register the control information generated by the control unit, integrate the control information into a complete control instruction and then send and write the control instruction into the flash memory, achieve orderly and continuously completing data writing and data obtaining in the flash memory, and avoid the problems of instruction execution error and missed execution in the flash memory when obtaining the threshold voltage of the flash memory.

In some preferred embodiments, in step S1, the control instructions include data instructions for changing the flash data and configuration instructions for changing the flash wordline voltage.

Specifically, the data command is set based on the target data information, so that actual data information of the written data expressed under the threshold voltage in the flash memory can be consistent with the target data information; the configuration instructions are set based on the measured voltage, which includes entering a test mode, writing a read wordline voltage, resetting, entering a high performance mode, etc., to effect adjustment of the flash configuration environment.

In some preferred embodiments, step S2 includes the following sub-steps:

s21, sending the data instruction to the flash memory, and writing the data instruction into the flash memory to change the data in the flash memory;

and S22, sending the configuration command to the flash memory, and writing the configuration command into the flash memory to adjust the word line voltage configured in the flash memory into a measurement voltage value, so that the data in the flash memory is represented as actual data information.

Specifically, the data in the flash memory is changed first, and then the word line voltage is adjusted, so that the actual data information acquisition process can be performed in order.

In addition, if the target data information is not reset during the second and subsequent loop measurement processes when the first measurement voltage is not the threshold voltage, the generated data command is the same, and step S21 can be skipped to reduce the number of times of writing in the flash memory, thereby improving the efficiency of obtaining the threshold voltage and reducing the wear of the flash memory.

In some preferred embodiments, when the control information includes control information corresponding to a plurality of flash memories, the step S1 includes the sub-steps of:

s11, receiving and registering control information;

and S12, distinguishing and integrating the control information according to the attribution of the flash memory, and respectively integrating the control information into complete executable control instructions.

In some preferred embodiments, the control information comprises a check code or a unique identification code or number corresponding to the flash memory.

Specifically, the control information includes a check code or a unique identification code or number corresponding to the flash memory; the control information with the same check code or the unique identification code or the number is registered in the same area in a distinguishing way, and when the control information in the area can be completely combined with an executable control instruction, the control information in the area is wholly packaged and sent to a flash memory corresponding to the check code or the unique identification code or the number; the check code or the unique identification code or the serial number is set, so that the scattered control information can be integrated, and the accuracy of information transmission is effectively ensured.

In some preferred embodiments, the actual data information further includes a check code or a unique identification code or number corresponding to the flash memory that generated the actual data information; after receiving the actual data information sent by the FPGA, the control unit matches the check code or the unique identification code or the serial number in the actual data information with the check code or the unique identification code or the serial number of the flash memory corresponding to the target data information, and analyzes whether the actual data information is consistent with the target data information after the matching is successful.

In a third aspect, referring to fig. 3, fig. 3 is an information transfer apparatus for performing an information transfer method for obtaining a threshold voltage in some embodiments of the present application, where the information transfer apparatus includes an FPGA unit, and the FPGA unit includes:

the register integration module is used for receiving and registering the control information generated by the control unit and integrating the control information into a control instruction;

the read-write module is connected with the register integration module through the bus module and is used for receiving the control instruction from the register integration module and sending the control instruction to the write-in flash memory;

the analog-to-digital conversion module is used for acquiring the voltage of the FPGA unit and the voltage of the flash memory and converting the voltages into digital signals;

the read-write module can acquire actual data information in the flash memory and send the actual data information to the register integration module through the bus module, the register integration module can feed back the actual data information acquired by the read-write module from the flash memory to the control unit, and the control unit can judge whether the measured voltage is the threshold voltage according to the actual data information and the target data information.

The device for acquiring the threshold voltage of the flash memory provided by the embodiment of the application can utilize the register integration module to receive and register the control information, and the control information is integrated and then packaged and sent to and written into the flash memory through the read-write module, so that the control information can be integrated into a complete control instruction and then sent to be written into the flash memory, data writing and data acquisition in the flash memory are sequentially and continuously completed, and the problems of instruction execution error and missed execution in the flash memory when the threshold voltage of the flash memory is acquired are solved.

In some preferred embodiments, there are multiple flash memories, and one FPGA unit completes the integrated sending of the control commands and the reading of the actual data information of the multiple flash memories.

According to the information transmission device, the FPGA unit is arranged as the middle layer to receive and register the control information generated by the control unit, and can be used as the message center to collect, arrange and send the control information, so that data writing and data acquisition in the flash memory can be orderly and continuously completed, and the problems of instruction execution errors and missed execution are solved; when the flash memories are used, the control information of the flash memories can be distinguished, integrated and sent, so that the obtaining method in the embodiment of the application can orderly and reliably complete the obtaining of the threshold voltages of the flash memories.

Specifically, the control unit generates a plurality of pieces of control information related to a plurality of flash memories, when a register integration module of the FPGA unit can simultaneously or discontinuously receive a plurality of pieces of control information sent by the control unit and register the control information, the control information comprises a check code or a unique identification code or a serial number corresponding to the flash memories, the register integration module distinguishes and arranges the control information according to the check code or the unique identification code or the serial number of the control information in the register integration module, when a plurality of pieces of control information registered in the register integration module comprise control information for changing the circulation requirement of actual data information of one flash memory, the register integration module integrates and packs the control information for changing the circulation requirement of the actual data information of one flash memory into a series of control instructions, then the control instructions are sent to the read-write module through a bus module, the read-write module sends the control instructions to the flash memories, and the write-control instructions are executed on the flash memories, changing the data and configuration environment of the flash memory to change the actual data information on the flash memory; after the control instruction is completely written in the flash memory, the read-write module can read stable actual data information which changes in the flash memory, then the actual data information is sent to the register integration module through the bus module, then the register integration module sorts and feeds back the actual data information to the control unit, and the unit to be controlled analyzes the actual data information to complete the whole information transmission process.

Example 1

As shown in fig. 4, which is a schematic structural diagram of the embodiment of the present application when the system is implemented specifically, the MCU communicates with the FPGA and the AD5160 digital potentiometer through the SPI protocol, and the FPGA communicates with the flash memory through the SPI protocol.

The FPGA comprises a CTRL module, a SLOT module, an APB bus and an ADC08s analog-to-digital conversion chip, the CTRL module is in communication connection with the MCU through an SPI protocol, CTRL is in communication connection with the SLOT module through the APB bus, the SLOT module is in communication connection with a flash memory through the SPI protocol, and the ADC08s analog-to-digital conversion chip is in communication connection with the CTRL module through the SPI protocol.

In this embodiment, the MCU serves as a main control unit, and the FPGA forwards the information to the flash memory through an internal state machine to execute corresponding operations.

Specifically, the FPGA is used as a communication link between the MCU and the flash memory, and the CTRL module is mainly responsible for analyzing and registering operation information sent by the MCU based on the SPI protocol, and sending configuration information to the ADC108s analog-to-digital conversion chip through the SPI protocol and sending corresponding operation data registered in the register to the SLOT module through the APB bus, respectively.

The SLOT module is set by a CTRL module through an APB bus by an internal start indication bit register CTRL _ FLASH _ en, so that CTRL _ FLASH operation is started, corresponding information for operating the FLASH memory is obtained, the information is sent to the FLASH memory through an SPI protocol after the indication bit register is set through an internal state machine, if the information is sent to an instruction for reading the information, data output by the FLASH memory, namely actual data information, is received and registered in the corresponding register, the information in the registers is sent to the CTRL module through the APB bus when the MCU sends a result instruction for reading the FLASH memory, the CTRL module sends the read information to the MCU through the SPI protocol, and the MCU analyzes the read information.

In this embodiment, the APB bus is used as a communication bridge between the CTRL module and the SLOT module, and is further configured to transmit the to-be-detected deletion output result registered by the SLOT module to the CTRL module, where the read rate is 4 bytes per time.

In this embodiment, the AD5160 digital potentiometer supplies power to the FPGA and the flash memory under the control of the MCU, and functions as a rheostat, thereby changing a resistance value according to input configuration information, and finally outputting different voltage values.

In this embodiment, the ADC108s ADC is mainly responsible for collecting voltages of the flash memory and the FPGA, and by converting the voltages into digital information, outputs a corresponding value after receiving address information sent by the CTRL module through the SPI protocol, and the value is converted by a formula to obtain a specific voltage value.

In this embodiment, in the data operation process of the flash memory, a write data instruction is sent, data is written, for example, 5A (0101 _ 1010), then a related instruction configuration instruction is sent, the flash memory enters a testmode form, then the configuration bit value corresponding to the word line voltage is modified through the write instruction to adjust the voltage of the word line, a read instruction is sent to read the number of "1" in the data at the previous write address, the FPGA counts the number of "1", and transmits the counted value to the MCU, if all the read data are "0" or "1", it is indicated that the word line voltage at this time is not the threshold voltage, and this means that the word line voltage is continuously adjusted step by step until the number of the read "1" is the same as the number of the written "1", and it is indicated that the word line voltage at this time is the threshold voltage of the.

In a fourth aspect, please refer to fig. 5, fig. 5 is a schematic structural diagram of an apparatus provided in an embodiment of the present application, and the present application provides an apparatus 3, including: the processor 301 and the memory 302, the processor 301 and the memory 302 being interconnected and communicating with each other via a communication bus 303 and/or other form of connection mechanism (not shown), the memory 302 storing a computer program executable by the processor 301, the processor 301 executing the computer program when the computing device is running to perform the method of any of the alternative implementations of the embodiments described above.

In a fifth aspect, the present application provides a storage medium, and when being executed by a processor, the computer program performs the method in any optional implementation manner of the foregoing embodiments. The storage medium may be implemented by any type of volatile or nonvolatile storage device or combination thereof, such as a Static Random Access Memory (SRAM), an Electrically Erasable Programmable Read-Only Memory (EEPROM), an Erasable Programmable Read-Only Memory (EPROM), a Programmable Read-Only Memory (PROM), a Read-Only Memory (ROM), a magnetic Memory, a flash Memory, a magnetic disk, or an optical disk.

In summary, the embodiments of the present application provide a threshold voltage acquisition system, a transmission method, an apparatus, a device, and a storage medium, where the acquisition system sets an FPGA unit as an intermediate layer to receive and register control information generated by a control unit, so that the control information is integrated into a complete control instruction and then is sent to be written into a flash memory, thereby implementing data writing and data acquisition in the flash memory orderly and continuously, and avoiding the problem of instruction execution error and missed execution in the flash memory when acquiring a threshold voltage of the flash memory.

In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways. The above-described embodiments of the apparatus are merely illustrative, and for example, the division of the units is only one logical division, and there may be other divisions when actually implemented, and for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection of devices or units through some communication interfaces, and may be in an electrical, mechanical or other form.

In addition, units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.

Furthermore, the functional modules in the embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.

In this document, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.

The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.