1. A method for improving the binding force of a Cu matrix and a carbon-based film is characterized by comprising the following steps: preparing a framework of a transition layer of a carbon-like metal on the surface of a Cu substrate covered with a template by adopting a dual-glow metal infiltration technology, removing the template, and aligning the substrate and the surface of the frameworkSurface treated with high density Ar⁺ And (3) bombarding and etching to improve the nucleation density of carbon atoms, and finally depositing a carbon-based film on the patterned substrate by a sputtering coating or plasma chemical vapor deposition method to improve the bonding force between the carbon-based film and the Cu substrate.

2. The method for improving the bonding force of a Cu matrix and a carbon-based film according to claim 1, wherein: the method comprises the following steps:

A. preparing a framework of a transition layer of a carbon-like metal on the surface of a Cu substrate covered with a template by using a dual-glow metal infiltration technology: placing a Cu substrate with a smooth and clean surface after polishing treatment on a substrate rack in a vacuum chamber of a dual-glow metal infiltration furnace provided with a carbon-like metal source electrode, covering a template with a certain thickness and porosity on the surface of the substrate, closing the chamber, vacuumizing to below 5Pa, keeping the air pressure at 30-50 Pa after introducing Ar, setting the voltage difference between the source electrode and a workpiece electrode at 200-350V, pre-sputtering for 20-50 min, heating the substrate at 700-900 ℃, keeping the temperature for 30-120 min, and keeping the substrate at-150-400V to obtain a carbon-like metal transition layer;

B. carrying out high-density Ar on the surface of a Cu substrate coated with a carbon-philic metal transition layer framework by using a dual-glow metal infiltration technology⁺Bombardment etching treatment: after the step A is finished, removing the template, closing the dual-glow metal infiltration furnace, vacuumizing to be below 5Pa, introducing Ar and opening a workpiece electrode power supply, setting the workpiece electrode voltage to be higher than the source electrode voltage of 100-300V, and carrying out high-density Ar on the surface of the Cu substrate coated with the hydrophilic metal transition layer framework⁺Bombardment etching treatment;

C. preparing a carbon-based film by using a deposition technology: the deposition technology comprises any one of sputtering coating or plasma chemical vapor deposition;

(1) the operation process of the sputtering coating comprises the following steps: introducing sputtering gas into a vacuum chamber, sputtering a carbon-containing target material by using a power supply with the sputtering power of 100-800W, breaking down Ar under the action of high pressure to form plasma to bombard the target material, depositing particles sputtered from the target material on a substrate, and depositing carbon-based films with different thicknesses on the substrate by adjusting the power of the target material and the sputtering time of the target material;

(2) the operation process of the plasma chemical vapor deposition comprises the following steps: introducing carbon-containing gas during the deposition process, breaking down the gas into plasma containing carbon atom groups under high pressure, depositing the carbon particles on the surface of the substrate, and depositing carbon-based films with different thicknesses on the substrate by adjusting the gas flow and time.

3. The method of claim 1 or 2, wherein the method comprises: in step A, the carbon-philic metal is any one of W, Ta and Mo.

4. The method for improving the bonding force of a Cu matrix and a carbon-based film according to claim 2, wherein: in the step A, the template is any one of stainless steel, foam copper and porous tungsten, the thickness of the template is 0.5-3 mm, and the porosity of the through hole is 50% -90%.

5. The method for improving the bonding force of a Cu matrix and a carbon-based film according to claim 2, wherein: in the step C, the carbon-containing target material is a graphite target, and the introduced carbon-containing gas is methane or acetylene.

6. The method for improving the bonding force of a Cu matrix and a carbon-based film according to claim 2, wherein: in the step C, the technological parameters for preparing the carbon-based film are as follows: the sputtering current of the target is 5-50A, the sputtering power is 80-900W, the sputtering time of the target is 1.5-4 h, and the thickness of the carbon-based film is 1-20 mu m.

7. The method for improving the bonding force of a Cu matrix and a carbon-based film according to claim 2, wherein: in the step C, the technological parameters for preparing the carbon-based film are as follows: the pressure of the chamber is 0.2-3.0 Pa, Ar and CH₄Or C₂H₂The gas volume flow ratio of (2) is 8: 1-1: 8; the thickness of the carbon-based film is 1 μm to 20 μm.

8. Improve Cu base member andthe method for combining the carbon-based film is characterized in that: polishing the Cu substrate by sand paper in sequence, then polishing by a diamond spraying polisher to enable the surface roughness of the Cu substrate to be lower than 1 mu m, then placing the Cu substrate in deionized water and alcohol for ultrasonic treatment for 15 min respectively, and placing the Cu substrate in air for drying; putting the dried Cu substrate into a double-glow plasma alloying device provided with a Ta source electrode, covering foamed copper with the porosity of 50% and the thickness of 0.3 mm on the surface of the Cu substrate, closing a chamber, introducing Ar gas when the vacuum degree of the chamber reaches below 10Pa, keeping the air pressure at 35 Pa, keeping the voltage difference between the source electrode and a workpiece at 250V, pre-sputtering for 30 min, keeping the matrix temperature at 750 ℃, keeping the substrate bias at 250V, and keeping the temperature for 30 min to obtain a Ta metal infiltration layer; ar gas flow rate is 50 mL/min, CH₄The gas flow is 50 mL/min, the substrate bias voltage is 600V, the sputtering time is 180 min, and the bonding force between the Cu substrate and the carbon-based film is 15-40N.

9. A method for improving the binding force of a Cu matrix and a carbon-based film is characterized by comprising the following steps: polishing the copper matrix by sand paper in sequence, then polishing by a diamond spray polishing machine to ensure that the surface roughness of the copper matrix is lower than 1 mu m, then placing the copper matrix in deionized water and alcohol for ultrasonic treatment for 20 min respectively, and then placing the copper matrix in air for drying; putting the dried copper matrix into a double-glow plasma alloying device provided with a Mo source electrode, covering the surface of the copper matrix with a porous stainless steel sheet with the pore density of 30% and the thickness of 0.5 mm, closing a chamber, introducing Ar when the vacuum degree of the chamber reaches below 5Pa, keeping the air pressure at 40 Pa, keeping the voltage difference between the source electrode and a workpiece electrode at 300V, pre-sputtering for 40 min, keeping the temperature of the matrix at 800 ℃, keeping the substrate bias voltage at 200V, and keeping the temperature for 60 min to obtain a Mo metal infiltration layer; the sputtering target is a graphite target, the flow rate of Ar gas is 70 mL/min, and CH₄The gas flow is 10 mL/min, the sputtering time is 150 min, and the bonding force between the Cu matrix and the carbon-based film is 20-50N.

10. A method for improving the binding force of a Cu matrix and a carbon-based film is characterized by comprising the following steps: polishing the copper matrix with sand paper, and polishing with diamond spray polishing machine to roughen the surface of the copper matrixThe degree is lower than 1 mu m, the copper matrix is placed in deionized water and alcohol for ultrasonic treatment for 30 min respectively, and then the copper matrix is placed in the air for drying; putting the dried copper matrix into a double-glow plasma alloying device provided with a W source electrode, covering the surface of a substrate with porous stainless steel with the hole density of 60% and the thickness of 0.5 mm, closing a chamber, introducing Ar when the vacuum degree in the chamber reaches below 15 Pa, keeping the air pressure at 50 Pa, keeping the voltage difference between the source electrode and a workpiece electrode at 200V, pre-sputtering for 20 min, keeping the temperature of the matrix at 700 ℃, keeping the substrate bias at 300V, and keeping the temperature for 90 min to obtain a W metal infiltrated layer; introducing Ar gas at a flow rate of 60 mL/min and C₂H₂The gas flow ratio is 1:1, sputtering is carried out for 120 min, and the bonding force between the Cu matrix and the carbon-based film is 20-50N.

Background

Cu is widely used in industry due to its good electrical conductivity and ductility, but has limitations in some applications due to its low hardness, poor surface wear resistance, and other disadvantages. In the traditional industry, Cu and other metals are mixed to prepare alloy to improve the hardness and the surface wear resistance of Cu, but the problems of high preparation cost, reduced conductivity and the like exist.

The coating technology is applied to the Cu matrix, and the carbon-based film material is prepared on the surface of the Cu matrix, so that the surface hardness and the wear resistance of the Cu matrix are increased, and the physical properties of the Cu matrix are not damaged. Meanwhile, the carbon-based film material has the advantages of good chemical stability, biocompatibility, high hardness, low friction coefficient, low wear rate and the like, and has important application prospect and value in the fields of aerospace, biomedicine, marine corrosion prevention and the like. The film is mainly formed by sp³C、sp²The three-dimensional network structure formed by C and H atoms has different physical and chemical properties according to the content of each element atom, but the bonding force between the film and the substrate material is poor due to the chemical inertia and high internal stress of the structure.

At present, the bonding force between the film and the substrate is mainly improved by a method of sputtering a gradient layer or a transition layer, but the chemical bonding effect between the film and the substrate is weaker and the bonding force is poorer due to the relatively lower energy provided by the sputtering particles, and the film is easy to peel off in environments of high load, high temperature and the like. Therefore, further development and exploration are needed, and the present invention intends to provide a method for improving the bonding force between the Cu matrix and the carbon-based thin film by using the double-diffusion metallization technique.

A dual-glow metal-infiltrating technique for the surface of plasma features that a DC adjustable power supply is respectively arranged between anode and cathode (workpiece) and between anode and source in vacuum container, and after the vacuum container is exhausted and inert gas is introduced to reach a certain pressure, two DC power supplies are connected to generate glow discharge between anode and cathode and between anode and source. By the double glow ion metal infiltration, a surface alloy layer containing the metal element to be infiltrated can be formed on the surface of the substrate and firmly bonded with the substrate. Meanwhile, the sputtering or plasma deposition of the carbon-based film can form firm carbide and strong chemical bonding with the surface containing strong carbon metal, so that the bonding performance of the carbon-based film and the Cu matrix is further improved.

Disclosure of Invention

The invention aims to provide a method for preparing a framework of a transition layer (such as W, Ta, Mo and the like) of a carbon-philic metal on the surface of a Cu substrate covered with a template by using a dual-glow metal infiltration technology, and then carrying out high-density Ar (argon) on the treated substrate⁺ And the bombardment etching treatment is used for improving the binding force of the Cu matrix and the carbon-based film. The method is based on the fact that a metal framework which is metallurgically combined with a substrate can be formed on the surface of a Cu substrate covered with a template through a dual-glow metal infiltration technology by using a carbon-like metal, and then high-density Ar is utilized⁺The bombardment etching treatment can increase surface micro-defects and improve the nucleation density of carbon atoms, and simultaneously, the bonding performance required by the carbon-philic metal and the carbon atoms is lowerControlling parameters such as current, temperature and time of sputtering (or plasma chemical vapor deposition), and depositing the carbon-based film on the surface of the patterned substrate, thereby improving the bonding force between the carbon-based film and the Cu substrate. The method has the advantages of wide selection range of the base material and the permeable layer material, simple preparation process, good controllability, environmental protection and the like.

The preparation method can be realized by the following technical scheme:

A. preparing a skeleton of a carbon-friendly metal transition layer (such as W, Ta, Mo and the like) on the surface of a Cu substrate covered with a template by using a dual-glow metal infiltration technology: placing a smooth and clean Cu substrate on a substrate rack in a vacuum chamber of a metal infiltration furnace, vacuumizing to below 10Pa, introducing argon as ionized gas, applying bias voltage to a magnetic substrate, enhancing the bombardment effect of Ar plasma on the substrate due to the constraint effect of a magnetic field at the substrate on the plasma, and directly depositing high-energy particles generated by bombardment on the surface of the substrate;

B. carrying out high-density Ar on the surface of a Cu substrate coated with a carbon-philic metal transition layer framework by using a dual-glow metal infiltration technology⁺Bombardment etching treatment: after the step A is finished, removing the template, closing the dual-glow metal infiltration furnace, vacuumizing to below 5Pa, introducing Ar serving as ionized gas, turning on a workpiece electrode power supply, setting the workpiece electrode voltage to be higher than the source electrode voltage of 100-300V, and carrying out high-density Ar on the surface of the Cu substrate coated with the transition layer skeleton of the carbon-philic metal⁺And (4) performing bombardment etching treatment.

C. Preparing a carbon-based film by using a deposition technology: the deposition technology comprises any one of sputtering coating or plasma chemical vapor deposition;

the operation process of sputtering coating is as follows: introducing sputtering gas into a vacuum chamber, sputtering a carbon-containing target material by using a power supply with the sputtering power of 100-800W, breaking down Ar under the action of high pressure to form a plasma bombarded target material, depositing particles sputtered from the target material on a substrate, and depositing carbon-based films with different thicknesses on the substrate by adjusting the power and the sputtering time of the sputtering carbon-containing target material;

secondly, the operation process of plasma chemical vapor deposition is as follows: introducing carbon-containing gas in the deposition process, breaking down the gas into plasma containing carbon atom groups under high pressure, depositing the carbon particles on the surface of the substrate, and depositing carbon-based films with different thicknesses on the substrate by adjusting the flow and time of the carbon-containing gas;

in step A, the carbon-philic metal may be any one of W, Ta, Mo, and the like.

In the step A, the template comprises any one of stainless steel, foam copper and porous tungsten, the thickness of the template is 0.5-3 mm, the through holes can be in various shapes, and the porosity is 50% -90%.

The principle and the beneficial effects of the invention are as follows:

at present, the bonding force between the carbon-based film and the Cu substrate is improved mainly by preparing a transition layer by a magnetron sputtering technology, but the problems of high internal stress and poor bonding force still exist. The invention selects a dual-glow ion metal infiltration technology, which is less influenced by the original mutual solubility of a matrix and infiltrated metal and can pass Ar⁺Bombarding to improve the surface vacancy and other defects, promoting element diffusion, and forming a surface alloy layer containing the metal element to be infiltrated on the surface of the substrate, wherein the surface alloy layer is firm in metallurgy, so that the high-strength bonding carbon-like metal transition layer of the Cu substrate is prepared. According to the invention, strong carbon metal is selected as a transition layer material, the interface stress caused by the mismatch of the thermal expansion coefficients of Cu and the carbon-philic metal is reduced by preparing the graphical transition layer, and a large number of vacancies and dislocation defects are formed on the surface of the carbon-philic metal transition layer and the surface of a Cu substrate which is not covered by the carbon-philic metal transition layer through Ar bombardment, so that the diffusion effect of interface elements is enhanced and the bonding strength of the carbon-based film and the Cu substrate is increased in the subsequent process of preparing the carbon-based film by sputtering coating or plasma chemical vapor deposition. In addition, because the required bonding performance of the carbon-philic metal and the carbon atom is low, the bonding energy is further reduced due to the defects of vacancies and the like, and the carbide is formed at the interface of the transition layer and the carbon-based film by controlling parameters such as the current, the temperature, the time and the like of sputtering (or plasma chemical vapor deposition), namely firm chemical bonding, so that the bonding force between the carbon-based film and the Cu matrix is further improved.

The deposition device adopted by the invention has the advantages of convenient use, simple operation, convenient raw material acquisition and high effect. And the bonding strength of the film substrate can be controlled by controlling the template pattern and the deposition time, and the controllability is good. The obtained metal transition layer has high quality and good uniformity, and has wide application prospect in the fields of solar cells, biomedicine, composite materials and the like.

Drawings

FIG. 1 is a schematic diagram illustrating the deposition of a film.

Detailed Description

The present invention is further illustrated by, but is not limited to, the following examples.

Example 1:

1) metal transition layer deposition

Before film coating, polishing a Cu substrate by using #400, #1200, #2000 and #3000 sandpaper in sequence, then polishing by using a diamond spraying polishing machine to enable the surface roughness to be lower than 1 mu m, then respectively carrying out ultrasonic treatment in deionized water and alcohol for 15 min, and placing the substrate in air for drying. And putting the processed substrate into a double-glow plasma alloying device provided with a Ta source electrode, covering the surface of the substrate with foamy copper with the porosity of 50% and the thickness of 0.3 mm, closing the chamber, introducing Ar when the vacuum degree of the cavity reaches below 10Pa, keeping the air pressure at 35 Pa, keeping the voltage difference between the source electrode and the workpiece electrode at 250V, pre-sputtering for 30 min, keeping the temperature of the matrix at 750 ℃, keeping the base bias at 250V, and keeping the temperature for 30 min to obtain the Ta metal infiltrated layer.

2) Carbon-based thin film deposition

The deposition gases were Ar (gas flow 50 mL/min) and CH₄(gas flow 50 mL/min), substrate bias 600V, sputtering 180 min.

As a result, the bonding force between the Cu substrate and the carbon-based thin film was found to be 25N.

Example 2:

1) metal transition layer deposition

Before film coating, polishing a copper matrix by using #600, #1200, #2500 and #3000 sandpaper in sequence, then polishing by using a diamond spraying polishing machine to enable the surface roughness to be lower than 1 mu m, then respectively carrying out ultrasonic treatment in deionized water and alcohol for 20 min, and placing in air for drying. And putting the processed substrate into a double-glow plasma alloying device provided with a Mo source electrode, covering the surface of the substrate with a porous stainless steel sheet with the hole density of 30% and the thickness of 0.5 mm, closing the chamber, introducing Ar when the vacuum degree of the cavity reaches below 5Pa, keeping the air pressure at 40 Pa, keeping the voltage difference between the source electrode and the workpiece electrode at 300V, pre-sputtering for 40 min, keeping the temperature of the matrix at 800 ℃, keeping the base bias voltage at 200V, and keeping the temperature for 60 min to obtain the Mo metal infiltrated layer.

2) Carbon-based thin film deposition

The sputtering target is a graphite target, and the auxiliary gases are Ar (gas flow is 70 mL/min) and CH₄(gas flow 10 mL/min), sputtering for 150 min.

As a result, the bonding force between the Cu substrate and the carbon-based thin film was found to be 30N.

Example 3:

1) metal transition layer deposition

Before film coating, polishing a copper matrix by using #500, #1200, #2000 and #3000 sandpaper in sequence, then polishing by using a diamond spraying polishing machine to enable the surface roughness to be lower than 1 mu m, then respectively carrying out ultrasonic treatment in deionized water and alcohol for 30 min, and placing in air for drying. And putting the processed substrate into a double-glow plasma alloying device provided with a W source electrode, covering the surface of the substrate with porous stainless steel with the hole density of 60% and the thickness of 0.5 mm, closing the chamber, introducing Ar when the vacuum degree of the cavity reaches below 15 Pa, keeping the air pressure at 50 Pa, keeping the voltage difference between the source electrode and the workpiece at 200V, pre-sputtering for 20 min, keeping the temperature of the matrix at 700 ℃, keeping the base bias at 300V, and keeping the temperature for 90 min to obtain the W metal infiltrated layer.

2) Carbon-based thin film deposition

Ar (gas flow rate 60 mL/min) and C are introduced₂H₂(the gas flow is 60 mL/min), the flow ratio of the two gases is 1:1, and the sputtering time is 120 min.

As a result, the bonding force between the Cu substrate and the carbon-based thin film was found to be 33N.