1. A kind of shade, characterized by, include a first surface and a second surface opposite to the first surface, and the shade has a total etching area, a half etching area and a peripheral area, the half etching area connects the total etching area and the peripheral area, the shade has multiple through holes in the total etching area, each through hole connects the first surface and the second surface, the half etching area has multiple first half etching troughs, each first half etching trough is from the first surface recess;

among the first half-etched grooves, the depth of the first half-etched groove closest to the full-etched area is larger than the depth of the first half-etched groove closest to the peripheral area.

2. The mask according to claim 1, wherein a first partition wall is provided between two adjacent first half etching grooves.

3. The mask according to claim 1, wherein in the first half etching grooves, the opening area of the first half etching grooves closer to the total etching area on the first surface is larger than the opening area of the first half etching grooves closer to the peripheral area on the first surface.

4. The mask according to claim 1, wherein the depth of the first half-etched trench closer to the full-etched region is greater than the depth of the first half-etched trench closer to the peripheral region.

5. The mask according to claim 1, wherein an absolute value of a slope of a connection line of a first reference point of the first surface on the peripheral region and a second reference point on the bottom surface of the first half-etched groove closest to the total etched region is less than 1.

6. The mask according to claim 1, wherein a first aperture ratio of the half-etched region on the first surface is 0.1 to 0.9.

7. The mask according to claim 1, wherein the half-etched region has a plurality of second half-etched grooves spaced from the first half-etched grooves, each second half-etched groove being recessed from the second surface, and of the second half-etched grooves, a depth of the second half-etched groove closest to the full-etched region is greater than a depth of the second half-etched groove closest to the peripheral region.

8. The mask according to claim 8, wherein a second partition wall is provided between two adjacent second half-etching grooves.

9. The mask according to claim 8, wherein in the second half etching grooves, the opening area of the second half etching grooves closer to the full etching area on the second surface is larger than the opening area of the second half etching grooves closer to the peripheral area on the second surface.

10. The mask according to claim 8, wherein the depth of the second half-etched trench closer to the full-etched region is greater than the depth of the second half-etched trench closer to the peripheral region.

11. The mask according to claim 8, wherein an absolute value of a slope of a connection line of a third reference point of the second surface on the peripheral region and a fourth reference point on the bottom surface of the second half trench closest to the full trench is less than 1.

12. The mask according to claim 8, wherein a second aperture ratio of the half-etched region on the second surface is 0.1 to 0.9.

Background

An Organic Light Emitting Diode (OLED) belongs to the field of Electroluminescent (EL) elements, and has the advantages of wide viewing angle, self-luminescence, high brightness, high contrast, wide operating temperature, fast reaction speed, etc. the manufacturing method generally adopts an evaporation process, a mask is placed between an evaporation source and a substrate, and a pattern can be realized on the substrate; a metal mask (FMM) has a plurality of vapor deposition openings, usually formed by etching or electroforming, through which organic materials can be attached to a substrate during a vapor deposition process, and a machine mechanism is used to apply tension and a magnet is disposed above the substrate to displace and fix the mask to a desired position.

However, the mask is prone to sag due to gravity, causing distortion of the pixel pattern, and the gap between the mask and the substrate is prone to overflow of organic materials, resulting in color mixing and shadow effect (shadow effect). In the process of applying tension, the mask is stretched towards two sides in the longitudinal direction, and the mask is easily subjected to different distribution of design patterns, so that the mask is buckled due to uneven stress distribution, and therefore, a mask with uniform stress and difficult buckling is urgently needed.

Disclosure of Invention

The invention provides a mask which has the advantages of uniform stress and difficult creasing.

The mask provided by the invention comprises a first surface and a second surface opposite to the first surface, and the mask is provided with a full-etching area, a half-etching area and a peripheral area, wherein the half-etching area is connected with the full-etching area and the peripheral area, the mask is provided with a plurality of through holes in the full-etching area, each through hole is communicated with the first surface and the second surface, the half-etching area is provided with a plurality of first half-etching grooves, and each first half-etching groove is recessed from the first surface. In the first half-etched groove, a depth of the first half-etched groove closest to the full-etched region is greater than a depth of the first half-etched groove closest to the peripheral region.

In an embodiment of the invention, in the mask, a first partition wall is disposed between two adjacent first half-etching grooves.

In an embodiment of the invention, in the first half-etching groove, an opening area of the first half-etching groove closer to the full-etching area on the first surface is larger than an opening area of the first half-etching groove closer to the peripheral area on the first surface.

In an embodiment of the invention, in the first half-etched groove, a depth of the first half-etched groove closer to the full-etched area is greater than a depth of the first half-etched groove closer to the peripheral area.

In an embodiment of the invention, an absolute value of a slope of a connection line between a first reference point of the first surface in the peripheral area and a second reference point on the bottom surface of the first half-etched groove closest to the full-etched area is less than 1

In an embodiment of the invention, the first aperture ratio of the half-etched region on the first surface is 0.1 to 0.9.

In an embodiment of the invention, the half-etching area has a plurality of second half-etching grooves, the second half-etching grooves are spaced from the first half-etching grooves, each second half-etching groove is recessed from the second surface, and in the second half-etching grooves, a depth of the second half-etching groove closest to the full-etching area is greater than a depth of the second half-etching groove closest to the peripheral area.

In an embodiment of the invention, in the mask, a second partition wall is disposed between two adjacent second half-etching grooves.

In an embodiment of the invention, in the second half etching grooves, an opening area of the second half etching groove closer to the full etching area on the second surface is larger than an opening area of the second half etching groove closer to the peripheral area on the second surface.

In an embodiment of the invention, in the second half etching grooves, a depth of the second half etching groove closer to the full etching area is greater than a depth of the second half etching groove closer to the peripheral area.

In an embodiment of the invention, an absolute value of a slope of a connection line between the third reference point of the second surface in the peripheral region and the fourth reference point on the bottom surface of the second half-etched groove closest to the full-etched region is less than 1

In an embodiment of the invention, a second aperture ratio of the half-etched region on the second surface is 0.1 to 0.9.

In the process of vapor deposition, the two ends of the mask are fixed and stretched by the machine, so as to stretch and flatten the mask. At this time, the tensile stress applied to the mask is mainly parallel to the first direction, and through the design that the half-etched region with the first half-etched groove connects the full-etched region with the peripheral region and the depth of the first half-etched groove closest to the full-etched region is greater than the depth of the first half-etched groove closest to the peripheral region, the problem that the tensile stress is uneven in stress generated in the full-etched region can be avoided, so that the wrinkle fluctuation degree of the mask during opening and pulling is reduced, and the advantage of improving the wrinkle problem of the mask is achieved.

In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below, but not intended to limit the present invention.

Drawings

FIG. 1 is a schematic top view of a mask according to an embodiment of the present invention;

FIG. 2 is an enlarged schematic view of the area X in FIG. 1;

FIG. 3 is a schematic sectional view taken along line A-A' of FIG. 2;

FIG. 4 is a schematic cross-sectional view of a mask according to an embodiment of the present invention;

FIG. 5 is a schematic cross-sectional view of a mask according to an embodiment of the present invention;

FIG. 6 is a schematic top view of a mask according to an embodiment of the present invention;

FIG. 7 is a partial top (bottom) view of a half-etched region of a mask according to an embodiment of the present invention;

FIG. 8 is a partial top (bottom) view of a half-etched region of a mask according to an embodiment of the present invention;

FIG. 9 is a partial top (bottom) view of a half-etched region of a mask according to an embodiment of the present invention.

Wherein, the reference numbers:

100 mask

101 pattern area

1011 outer boundary

1012 inner boundary

102 no pattern area

103a, 103b ends

110 first surface

120 second surface

130 total area of etching

131 through hole

140 half-etched area

141 first half etching groove

1411 bottom surface

1412 first side edge

1413 second side edge

1414 third side edge

1415 fourth side

1416 chamfering

142 first partition wall

1421 Top surface

143 second half etching groove

1431 bottom surface

1432 the first side edge

1433 second side edge

1434 the third side edge

1435 fourth side

1436 lead angle

144 second partition wall

1441 top surface

150 peripheral area

Section line A-A

C1, C2 center

D1 first direction

D2 second direction

e. f is distance

L1, L2 connecting lines

P1 first datum point

P2 second reference point

P3 third reference point

P4 fourth datum point

T1, T2 depth

X is a region

Y1 and Y2 in unit area

Detailed Description

Fig. 1 is a partial top view of a mask according to an embodiment of the invention. Fig. 2 is an enlarged schematic view of the X region in fig. 1. FIG. 3 is a schematic sectional view taken along line A-A' in FIG. 2. As shown in fig. 1 to 3, the mask 100 of the present invention includes a first surface 110 and a second surface 120, the first surface 110 is opposite to the second surface 120, the mask 100 has a full-etching region 130, a half-etching region 140 and a peripheral region 150, the half-etching region 140 connects the full-etching region 130 and the peripheral region 150, the mask 100 has a plurality of through holes 131 in the full-etching region 130, each through hole 131 connects the first surface 110 and the second surface 120, the half-etching region 140 has a plurality of first half-etching grooves 141, each first half-etching groove 141 is recessed from the first surface 110. Among the plurality of first half-etched grooves 141, the depth T1 of the first half-etched groove 141 closest to the full-etched region 130 is greater than the depth T1 of the first half-etched groove 141 closest to the peripheral region 150. In the present invention, the material of the mask 100 is, for example, but not limited to, nickel alloy.

The mask 100 may have a plurality of pattern areas 101 and a non-pattern area 102. In the present embodiment, as shown in fig. 1 and 2, each pattern region 101 includes a full-etched region 130 and a half-etched region 140, and the non-pattern region 102 includes a plurality of peripheral regions 150, and each peripheral region 150 surrounds each pattern region 101. The plurality of pattern regions 101 of the mask 100 are sequentially arranged at intervals along the first direction D1 (i.e., the mask 100 is a strip-shaped mask 100, the pattern regions 101 are arranged in a strip shape), the half-etched region 140 of each pattern region 101 surrounds the corresponding full-etched region 130, each peripheral region 150 without the pattern region 102 surrounds the corresponding half-etched region 140, further, each pattern region 101 has an outer boundary 1011 and an inner boundary 1012, the outer boundary 1011 is connected with the corresponding peripheral region 150, the area surrounded by the inner boundary 1012 is the full-etched region 130, and the area between the outer boundary 1011 and the inner boundary 1012 is the half-etched region 140. In addition, the shortest distance e between the inner boundary 1012 and the outer boundary 1011 of each pattern region 101 in the first direction D1 is greater than zero, the shortest distance f between the inner boundary 1012 and the outer boundary 1011 of each pattern region 101 in the second direction D2 is greater than zero, and the shortest distances e, f between the inner boundary 1012 and the outer boundary 1011 of each pattern region 101 in the first direction D1 and the second direction D2 may be the same or different, thereby allowing the half-etched region 140 to surround the full-etched region 130. In addition, in the present invention, the depth T1 of the first half-etched groove 141 is a vertical distance between the first surface 110 and the bottom surface 1411 of the first half-etched groove 141.

In the vapor deposition process of the mask 100 of the present embodiment, the two ends 103a, 103b of the mask 100 are fixed and stretched by the machine, so as to stretch and flatten the mask 100. At this time, the tensile stress applied to the mask 100 is mainly parallel to the first direction D1, and through the design that the half-etched region 140 having the first half-etched groove 141 connects the full-etched region 130 having the through hole 131 and the peripheral region 150, and the depth T1 of the first half-etched groove 141 closest to the full-etched region 130 is greater than the depth T2 of the first half-etched groove 141 closest to the peripheral region 150, the problem of stress non-uniformity generated in the full-etched region 130 by the tensile stress can be avoided, thereby reducing the wrinkle degree of the mask 100 and improving the wrinkle problem of the mask 100.

Although the embodiment shown in fig. 1 and 2 is exemplified by a half-etched region 140 surrounding a full-etched region 130 and a plurality of pattern regions 101 sequentially spaced along the first direction D1; however, in other embodiments, each pattern region 101 may also include one half-etched region 140 and two or more full-etched regions 130, the half-etched region 140 simultaneously surrounds the two or more full-etched regions 130, and the plurality of pattern regions 101 may be sequentially arranged along the second direction D2 at intervals (i.e., the pattern regions 101 are arranged in stripes) or simultaneously arranged along the first direction D1 and the second direction D2 at intervals (i.e., the pattern regions 101 are arranged in arrays).

In the half-etched region 140, a first partition wall 142 is provided between two adjacent first half-etched grooves 141. In the present invention, the first half-etching grooves 141 and the first partition walls 142 are formed by etching the first surface 110 by an etching technique, and the top surfaces 1421 of the first partition walls 142 are preferably not affected by etching and are aligned with the first surface 110, but in other cases, the top surfaces 1421 of the first partition walls 142 may be affected by etching and are lower than the first surface 110. Accordingly, in one embodiment, as shown in fig. 3, the top surface 1421 of the first partition 142 may be aligned with the first surface 110; in one embodiment, the top surfaces 1421 of the first partition walls 142 may be lower than the first surface 110, i.e., the top surfaces 1421 of the first partition walls 142 are located between the first surface 110 and the bottom surface 1411 of the first half-etched groove 141 adjacent to the first surface 110.

Each of the first half-etched grooves 141 has an opening area on the first surface 110. In the present invention, the opening areas of the first half-etched grooves 141 on the first surface 110 may be the same or different, and the opening shapes of the first half-etched grooves 141 on the first surface 110 may be geometric shapes such as square, circle, rectangle, etc., or non-geometric shapes. In one embodiment, as shown in fig. 2, the opening areas of the first half-etched grooves 141 on the first surface 110 are the same, and the opening shapes of the first half-etched grooves 141 on the first surface 110 are square. In addition, in the present invention, the opening shape of the through hole 131 of the full etching area 130 on the first surface 110 may be a geometric shape such as a circle, a rectangle, or a non-geometric shape, and the opening shape of the through hole 131 of the full etching area 130 on the first surface 110 may be the same as or different from the opening shape of the first half etching groove 141 on the first surface 110, the opening area of the through hole 131 of the full etching area 130 on the first surface 110 may be designed according to requirements, and the arrangement manners of the through hole 131 of the full etching area 130 and the first half etching groove 141 of the half etching area 140 may be the same or different.

In the first half-etched groove 141, the depth T1 of the first half-etched groove 141 closer to the full-etched region 130 is greater than the depth T1 of the first half-etched groove 141 closer to the peripheral region 150. In one embodiment, as shown in fig. 3, the depth T1 of the first half etching groove 141 decreases from the full etching area 130 to the peripheral area 150, and the depth T1 of the first half etching groove 141 closest to the full etching area 130 is the largest. In addition, the absolute value of the slope of the line L1 of the first surface 110 connecting the first reference point P1 on the peripheral region 150 and the second reference point P2 on the bottom 1411 of the first half-etched groove 141 closest to the full-etched region 130 is less than 1, i.e., the absolute value of the slope of the line from the thinnest point to the thickest point of the entire thickness of the mask 100 is less than 1.

FIG. 4 is a schematic cross-sectional view of a mask according to an embodiment of the present invention. In an embodiment, as shown in fig. 4, the half-etched area 140 further has a plurality of second half-etched grooves 143, the second half-etched grooves 143 are spaced from the first half-etched grooves 141 up and down, each second half-etched groove 143 is recessed from the second surface 120, and in the second half-etched grooves 143, a depth T2 of the second half-etched groove 143 closest to the full-etched area 130 is greater than a depth T2 of the second half-etched groove 143 closest to the peripheral area, that is, a vertical distance between the second surface 120 and a bottom surface 1431 of the second half-etched groove 143 closest to the full-etched area 130 is greater than a vertical distance between the second surface 120 and the bottom surface 1431 of the second half-etched groove 143 closest to the peripheral area. In addition, in the present invention, the depth T2 of the second half etching groove 143 and the depth T1 of the first half etching groove 141 may be the same or different.

In the half-etched region 140, a second partition wall 144 is provided between two adjacent second half-etched grooves 143. In the present invention, the second half-etching groove 143 and the second partition wall 144 are formed by etching the second surface 120 by an etching technique, and the top surface 1441 of the second partition wall 144 is preferably not affected by etching and is aligned with the second surface 120, but the top surface 1441 of the second partition wall 144 may be affected by etching and is lower than the second surface 120. Accordingly, in one embodiment, as shown in FIG. 4, the top surface 1441 of the second partition wall 144 may be flush with the second surface 120; in one embodiment, however, the top surface 1441 of the second partition wall 144 may be lower than the second surface 120, i.e., the top surface 1441 of the second partition wall 144 is located between the second surface 120 and the bottom surface 1431 of the second half-etched groove 143 that it abuts.

Each of the second half-etching grooves 143 has an opening area on the second surface 120. In the present invention, the opening area of the second half-etched groove 143 on the second surface 120 may be the same or different, and the opening shape of the second half-etched groove 143 on the second surface 120 may be a geometric shape such as a circle, a rectangle, or a non-geometric shape. In an embodiment, the opening areas of the second half-etched grooves 143 on the second surface 120 are the same, and the opening shapes of the second half-etched grooves 143 on the second surface 120 are square. In addition, in the present invention, the opening area and the opening shape of the second half-etched groove 143 on the second surface 120 may be the same as or different from the opening area and the opening shape of the first half-etched groove 141 on the first surface 110. In addition, in the present invention, the opening shape of the through hole 131 of the full etching area 130 on the second surface 120 may be a geometric shape such as a circle, a rectangle, or a non-geometric shape, and the opening shape of the through hole 131 of the full etching area 130 on the second surface 120 may be the same as or different from the opening shape of the second half etching groove 143 on the second surface 120, the opening area of the through hole 131 of the full etching area 130 on the second surface 120 may be designed according to the requirement, and the arrangement manners of the through hole 131 of the full etching area 130 and the second half etching groove 143 of the half etching area 140 may be the same or different.

In the second half-etched groove 143, a depth T2 of the second half-etched groove 143 closer to the full-etched region 130 is greater than a depth T2 of the second half-etched groove 143 closer to the peripheral region 150. In one embodiment, as shown in fig. 4, the depth T2 of the second half-etched groove 143 decreases from the full-etched region 130 to the peripheral region 150, and the second half-etched groove 143 closest to the full-etched region 130 has the maximum depth. In addition, the absolute value of the slope of a line L2 connecting the third reference point P3 of the second surface 120 in the peripheral region 150 and the fourth reference point P4 on the bottom surface 1431 of the second half etching groove 143 closest to the full etching region 130 is less than 1.

FIG. 5 is a schematic cross-sectional view of a mask according to an embodiment of the present invention. In the present invention, the arrangement positions of the second half-etching grooves 143 and the first half-etching grooves 141 may be opposite to each other or staggered. Fig. 4 illustrates an arrangement position of the second half etching grooves 143 and an arrangement position of the first half etching grooves 141 facing each other, and fig. 5 illustrates an arrangement position of the second half etching grooves 143 and an arrangement position of the first half etching grooves 141 being staggered with each other.

FIG. 6 is a partial top (bottom) view of a mask according to an embodiment of the present invention. In the present invention, the opening area and the opening shape of the first half-etched groove 141 on the first surface 110 may be the same or different. In an embodiment, as shown in fig. 2, the openings of the first half-etched grooves 141 on the first surface 110 are all square, and the opening areas of the first half-etched grooves 141 on the first surface 110 are the same. In an embodiment, as shown in fig. 6, the openings of the first half-etched grooves 141 on the first surface 110 are all square, and the opening areas of the first half-etched grooves 141 on the first surface 110 are different, for example, the opening area of the first half-etched groove 141 closer to the full-etched region 130 on the first surface 110 is larger than the opening area of the first half-etched groove 141 closer to the peripheral region 150 on the first surface 110.

In addition, in the present invention, the opening area and the opening shape of the second half-etched groove 143 on the second surface 120 may be the same or different. In one embodiment, the openings of the second half-etched grooves 143 on the second surface 120 are all square, and the opening areas of the second half-etched grooves 143 on the second surface 120 are the same. In an embodiment, as shown in fig. 6, the openings of the second half-etched grooves 143 on the second surface 120 are all square, but the opening areas of the second half-etched grooves 143 on the second surface 120 are different, for example, the opening area of the second half-etched groove 143 closer to the full-etched region 130 on the second surface 120 is larger than the opening area of the second half-etched groove 143 closer to the peripheral region 150 on the second surface 120.

FIG. 7 is a partial top (bottom) view of a half-etched region of a mask according to an embodiment of the present invention. FIG. 8 is a partial top (bottom) view of a half-etched region of a mask according to an embodiment of the present invention. FIG. 9 is a partial top (bottom) view of a half-etched region of a mask according to an embodiment of the present invention. In the present invention, the half-etched region 140 has a first aperture ratio on the first surface 110, the first aperture ratio is a ratio of an opening area of the first half-etched groove 141 contained in the unit area Y1 of the first surface 110 to the first surface 110, and the first aperture ratio is, for example, 0.1 to 0.9. In one embodiment, as shown in fig. 7, the first aperture ratio of the half-etched region 140 on the first surface 110 is 0.22; in this embodiment, for example, the opening of the first half-etched groove 141 on the first surface 110 is substantially rectangular, the distance between the first side 1412 and the second side 1413 arranged along the first direction D1 is, for example, 0.04 length unit, the distance between the third side 1414 and the fourth side 1415 arranged along the second direction D2 is, for example, 0.03 length unit, the first side 1412 and the third side 1414, the first side 1412 and the fourth side 1415, a chamfer 1416 is formed between the second side 1413 and the third side 1414 and between the second side 1413 and the fourth side 1415, a radius of curvature of the chamfer 1416 is, for example, 0.012 length unit, a distance between centers C1 of two adjacent first half-etched grooves 141 arranged along the first direction D1 is, for example, 0.11392 length unit, a distance between centers C1 of two adjacent first half-etched grooves 141 arranged along the second direction D2 is, for example, 0.08544 length unit, and a distance between two nearest first half-etched grooves 141 is, for example, 0.031 length unit. In one embodiment, as shown in fig. 8, the first aperture ratio of the half-etched region 140 on the first surface 110 is 0.33; in this embodiment, for example, the opening of the first half-etched groove 141 on the first surface 110 is substantially square, the distance between the first side 1412 and the second side 1413 arranged along the first direction D1 is, for example, 0.04 length unit, the distance between the third side 1414 and the fourth side 1415 arranged along the second direction D2 is, for example, 0.04 length unit, the first side 1412 and the third side 1414, the first side 1412 and the fourth side 1415, a chamfer 1416 is formed between the second side 1413 and the third side 1414 and between the second side 1413 and the fourth side 1415, a radius of curvature of the chamfer 1416 is, for example, 0.012 units in length, a distance between centers C1 of two adjacent first half-etched grooves 141 arranged along the first direction D1 is, for example, 0.11392 units in length, a distance between centers C1 of two adjacent first half-etched grooves 141 arranged along the second direction D2 is, for example, 0.08544 units in length, and a distance between two nearest first half-etched grooves 141 is, for example, 0.025 units in length. In one embodiment, as shown in fig. 9, the first aperture ratio of the half-etched region 140 on the first surface 110 is 0.46; in this embodiment, for example, the opening of the first half-etched groove 141 on the first surface 110 is substantially rectangular, the distance between the first side 1412 and the second side 1413 arranged along the first direction D1 is, for example, 0.04 length unit, the distance between the third side 1414 and the fourth side 1415 arranged along the second direction D2 is, for example, 0.06 length unit, the first side 1412 and the third side 1414, the first side 1412 and the fourth side 1415, a fillet 1416 is formed between the second and third side edges 1413, 1414 and the second and fourth side edges 1413, 1415, a curvature radius of the fillet 1416 is, for example, 0.012 unit in length, a distance between centers C1 of two adjacent first half-etched grooves 141 arranged along the first direction D1 is, for example, 0.11392 unit in length, a distance between centers C1 of two adjacent first half-etched grooves 141 arranged along the second direction D2 is, for example, 0.08544 unit in length, and a distance between two nearest first half-etched grooves 141 is, for example, 0.018 unit in length.

In the present invention, the half-etched region 140 has a second aperture ratio on the second surface 120, and the ratio of the opening area of the second half-etched groove 143 on the second surface 120 is contained in the unit area Y2 of the second surface 120 with the second aperture ratio, for example, is 0.1 to 0.9. In one embodiment, as shown in fig. 7, the second aperture ratio of the half-etched region 140 on the second surface 120 is 0.22; in this embodiment, for example, the opening of the second half-etched groove 143 on the second surface 120 is substantially rectangular, the distance between the first side 1432 and the second side 1433 arranged along the first direction D1 is, for example, 0.04 length unit, the distance between the third side 1434 and the fourth side 1435 arranged along the second direction D2 is, for example, 0.03 length unit, the first side 1432 and the third side 1434, the first side 1432 and the fourth side 1435, a lead angle 1436 is formed between the second side edge 1433 and the third side edge 1434 and between the second side edge 1433 and the fourth side edge 1435, a curvature radius of the lead angle 1436 is, for example, 0.012 length unit, a distance between centers C2 of two adjacent second half-etched grooves 143 arranged along the first direction D1 is, for example, 0.11392 length unit, a distance between centers C2 of two adjacent second half-etched grooves 143 arranged along the second direction D2 is, for example, 0.08544 length unit, and a distance between two nearest second half-etched grooves 143 is, for example, 0.031 length unit. In one embodiment, as shown in fig. 8, the second aperture ratio of the half-etched region 140 on the second surface 120 is 0.33; in this embodiment, for example, the opening of the second half-etched groove 143 on the second surface 120 is substantially square, the distance between the first side 1432 and the second side 1433 arranged along the first direction D1 is, for example, 0.04 length unit, the distance between the third side 1434 and the fourth side 1435 arranged along the second direction D2 is, for example, 0.04 length unit, the first side 1432 and the third side 1434, the first side 1432 and the fourth side 1435, a lead angle 1436 is formed between the second side edge 1433 and the third side edge 1434 and between the second side edge 1433 and the fourth side edge 1435, a curvature radius of the lead angle 1436 is, for example, 0.012 length unit, a distance between centers C2 of two adjacent second half-etched grooves 143 arranged along the first direction D1 is, for example, 0.11392 length unit, a distance between centers C2 of two adjacent second half-etched grooves 143 arranged along the second direction D2 is, for example, 0.08544 length unit, and a distance between two nearest second half-etched grooves 143 is, for example, 0.025 length unit. In one embodiment, as shown in fig. 9, the second aperture ratio of the half-etched region 140 on the second surface 120 is 0.46; in this embodiment, for example, the opening of the second half-etched groove 143 on the second surface 120 is substantially rectangular, the distance between the first side 1432 and the second side 1433 arranged along the first direction D1 is, for example, 0.04 length unit, the distance between the third side 1434 and the fourth side 1435 arranged along the second direction D2 is, for example, 0.06 length unit, the first side 1432 and the third side 1434, the first side 1432 and the fourth side 1435, a lead angle 1436 is formed between the second side edge 1433 and the third side edge 1434 and between the second side edge 1433 and the fourth side edge 1435, a curvature radius of the lead angle 1436 is, for example, 0.012 length unit, a distance between centers C2 of two adjacent second half-etched grooves 143 arranged along the first direction D1 is, for example, 0.11392 length unit, a distance between centers C2 of two adjacent second half-etched grooves 143 arranged along the second direction D2 is, for example, 0.08544 length unit, and a distance between two nearest second half-etched grooves 143 is, for example, 0.018 length unit.

The above description of the opening size of the first half-etched groove on the first surface and the opening size of the second half-etched groove on the second surface is only for illustration, and the opening size of the first half-etched groove on the first surface and the opening size of the second half-etched groove on the second surface are not limited to the above description.

In summary, in the vapor deposition process of the mask of the embodiment of the invention, the two ends of the mask are fixed and stretched by the machine, so as to stretch and flatten the mask. At this time, the tensile stress applied to the mask is mainly parallel to the first direction, and through the design that the half-etched region with the first half-etched groove connects the full-etched region with the peripheral region and the depth of the first half-etched groove closest to the full-etched region is greater than the depth of the first half-etched groove closest to the peripheral region, the problem that the tensile stress generates stress non-uniformity in the full-etched region can be avoided, so that the wrinkle degree of the mask is reduced and the wrinkle problem of the mask is improved.

Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

The present invention is capable of other embodiments, and various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.