1. A method for adjusting a read operation voltage value, comprising:

acquiring a reading result of a group of unequal data preset in a storage unit;

performing exclusive or processing on the reading result to obtain a processing result of 0 or 1;

and adjusting the voltage value according to the processing result of 0 or 1 to repeatedly read the unequal data to obtain a 01 image changed along with the voltage, and taking the voltage value corresponding to the position of 1 in the 01 image as the voltage value of the reading configuration information.

2. The method of claim 1, wherein the non-equivalent data is a set of inverted data.

3. The method of claim 1, wherein the step of adjusting the voltage value according to the processing result of 0 or 1 to obtain a 01 image with voltage variation comprises:

reading the data in the memory cell with an initial low voltage value to ensure that the XOR result is 0;

increasing the voltage value to obtain an exclusive or result of 1;

increasing the voltage value results in an exclusive or result of 0.

4. The method of claim 3, wherein the step of increasing the voltage value to obtain an XOR result of 1 comprises:

and adjusting the initial low voltage value according to a preset minimum gear voltage value so as to obtain an exclusive OR result of 1.

5. The method of claim 3, wherein the step of increasing the voltage value to obtain an XOR result of 0 comprises:

and adjusting the voltage value when the XOR result is 1 according to a preset minimum gear voltage value so as to obtain the XOR result of 0.

6. The method according to claim 1, wherein the step of using the voltage value corresponding to the position of 1 in the 01 image as the voltage value of the reading configuration information comprises:

and taking the voltage value corresponding to the middle value of the position 1 in the 01 image as the voltage value of the reading configuration information.

7. The method of claim 1, wherein the step of adjusting the voltage value according to the processing result of 0 or 1 to obtain a 01 image with voltage variation comprises:

and when an exclusive-or result obtained by reading the unequal data by using an initial voltage value is 1, increasing and decreasing the range of the voltage value of which the exclusive-or result is 1 by using the initial voltage value.

8. An apparatus for adjusting a read operation voltage value, comprising:

the first acquisition module is used for acquiring a reading result of a group of unequal data preset in the storage unit;

the first processing module is used for carrying out XOR processing on the reading result to obtain a processing result of 0 or 1;

and the second processing module is used for adjusting the voltage value according to the processing result of 0 or 1 to repeatedly read the unequal data to obtain a 01 image changing along with the voltage, and taking the voltage value corresponding to the position of 1 in the 01 image as the voltage value of the read configuration information.

9. An electronic device comprising a processor and a memory, said memory storing computer readable instructions which, when executed by said processor, perform the steps of the method according to any one of claims 1 to 7.

10. A storage medium having a computer program stored thereon, wherein the computer program, when executed by a processor, performs the steps of the method according to any one of claims 1-7.

Background

In the power-on process of the NOR FLASH, the voltage value applied to the memory cell by the read operation needs to be adjusted to read the preset configuration information in the chip, so as to ensure the successful initialization of the chip. However, because the characteristics of each memory cell are different, after the state of the memory cell is preset in factory, the voltage value of the memory cell in the chip is in a normal distribution value. The current practice is to adjust the voltage value applied to the memory cell by the read operation through a set of memory cells with different initial voltage values preset in the array.

When the power is on, firstly, reading the group of storage units by using a default voltage value, then judging whether the read data is correct and the number of the read 1, and then correspondingly increasing or decreasing the voltage value.

However, the method has certain drawbacks, as shown in fig. 4, the read voltage value in the interval 2 cannot be accurately found, and the adjusted voltage value may still fall within the range of the erase voltage value in the interval 1 or the program voltage value in the interval 3, which may cause errors in subsequent read configuration information values.

Disclosure of Invention

An object of the embodiments of the present application is to provide a method, an apparatus, an electronic device, and a storage medium for adjusting a read operation voltage value, which have the advantage of being able to accurately find a read voltage value.

In a first aspect, an embodiment of the present application provides a method for adjusting a read operation voltage value, where the technical scheme is as follows:

the method comprises the following steps:

acquiring a reading result of a group of unequal data preset in a storage unit;

performing exclusive or processing on the reading result to obtain a processing result of 0 or 1;

and adjusting the voltage value according to the processing result of 0 or 1 to repeatedly read the unequal data to obtain a 01 image changed along with the voltage, and taking the voltage value corresponding to the position of 1 in the 01 image as the voltage value of the reading configuration information.

Further, in this embodiment of the present application, the step of obtaining a read result of a set of non-equivalent data preset in the storage unit includes:

the non-equivalent data is a set of negation data.

Further, in this embodiment of the present application, the step of adjusting the voltage value according to the processing result of 0 or 1 to obtain a 01 image varying with the voltage includes:

reading the data in the memory cell with an initial low voltage value to ensure that the XOR result is 0;

increasing the voltage value to obtain an exclusive or result of 1;

increasing the voltage value results in an exclusive or result of 0.

Further, in this embodiment of the present application, the step of increasing the voltage value to obtain an xor result of 1 includes:

and adjusting the initial low voltage value according to a preset minimum gear voltage value so as to obtain an exclusive OR result of 1.

Further, in this embodiment of the present application, the step of increasing the voltage value to obtain an exclusive or result of 0 includes:

and adjusting the voltage value when the XOR result is 1 according to a preset minimum gear voltage value so as to obtain the XOR result of 0.

Further, in this embodiment of the application, the step of taking the voltage value corresponding to the position of 1 in the 01 image as the voltage value of the reading configuration information includes:

and taking the voltage value corresponding to the middle value of the position 1 in the 01 image as the voltage value of the reading configuration information.

Further, in this embodiment of the present application, the step of adjusting the voltage value according to the processing result of 0 or 1 to obtain a 01 image varying with the voltage includes:

and when an exclusive-or result obtained by reading the unequal data by using an initial voltage value is 1, increasing and decreasing the range of the voltage value of which the exclusive-or result is 1 by using the initial voltage value.

In a second aspect, the present application further provides a device for adjusting a read operation voltage value, where the technical solution includes:

the first acquisition module is used for acquiring a reading result of a group of unequal data preset in the storage unit;

the first processing module is used for carrying out XOR processing on the reading result to obtain a processing result of 0 or 1;

and the second processing module is used for adjusting the voltage value according to the processing result of 0 or 1 to repeatedly read the unequal data to obtain a 01 image changing along with the voltage, and taking the voltage value corresponding to the position of 1 in the 01 image as the voltage value of the read configuration information.

In a third aspect, the present application further provides an electronic device, which includes a processor and a memory, where the memory stores computer-readable instructions, and when the computer-readable instructions are executed by the processor, the steps in the method are executed.

In a fourth aspect, the present application also provides a storage medium having a computer program stored thereon, which, when executed by a processor, performs the steps of the method as described above.

As can be seen from the above, in the method, the apparatus, the electronic device, and the storage medium for adjusting the read operation voltage value provided in the embodiments of the present application, the read result of a set of unequal data preset in the storage unit is obtained; performing exclusive or processing on the reading result to obtain a processing result of 0 or 1; and adjusting the voltage value according to the processing result of 0 or 1 to repeatedly read the unequal data to obtain a 01 image changed along with the voltage, and taking the voltage value corresponding to the position of 1 in the 01 image as the voltage value of the reading configuration information, thereby having the advantage of being capable of accurately finding the reading voltage value.

Additional features and advantages of the present application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the embodiments of the present application. The objectives and other advantages of the application may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.

Drawings

Fig. 1 is a flowchart of a method for adjusting a read operation voltage according to an embodiment of the present disclosure.

Fig. 2 is a schematic structural diagram of an apparatus for adjusting a read operation voltage according to an embodiment of the present disclosure.

Fig. 3 is a schematic structural diagram of an electronic device according to an embodiment of the present application.

FIG. 4 is a schematic diagram of voltage distribution in a memory cell.

Fig. 5 is a 01 image as a function of voltage.

In the figure: 210. a first acquisition module; 220. a first processing module; 230. a second processing module; 300. an electronic device; 310. a processor; 320. a memory.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present application without making any creative effort, shall fall within the protection scope of the present application.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.

Referring to fig. 1 to 5, a method for adjusting a read operation voltage value includes:

s110, obtaining a reading result of a group of unequal data preset in a storage unit;

s120, performing XOR processing on the read result to obtain a processing result of 0 or 1;

s130, adjusting the voltage value according to the processing result of 0 or 1, repeatedly reading unequal data to obtain a 01 image changing along with the voltage, and taking the voltage value corresponding to the position of 1 in the 01 image as the voltage value of the reading configuration information.

By the technical scheme, a set of reading results of unequal data preset in a storage unit is obtained, the unequal reading results are subjected to exclusive-or processing, the unequal reading results can be marked as 1 through exclusive-or processing, if the unequal reading results are equivalent, the result obtained through exclusive-or processing is marked as 0, in normal reading, due to unequal data in the storage unit, when reading is carried out at normal reading voltage, the reading result is also unequal, and the result obtained through exclusive-or processing is 1, therefore, when the exclusive-or result is 1, the corresponding reading voltage is normal reading voltage, when the exclusive-or result is 0, the unequal reading data is indicated to obtain equivalent reading result, at this time, the reading voltage is abnormal, and the reading voltage at this time may be an erasing voltage or a programming voltage, all the results are the same, and the result obtained after the exclusive-or processing becomes 0, so that in the 01 image changed along with the voltage, the range in which 0 is located represents the abnormal reading voltage range, and the range in which 1 is located represents the normal reading voltage range, so that the voltage value corresponding to the position in which 1 is located can be used as the voltage value of the reading configuration information.

Further, in some embodiments, the step of obtaining the read result of a set of non-equivalent data preset in the memory cell includes:

the non-identity data is a set of negation data.

Through the technical scheme, a group of unequal data can be directly obtained by inverting the data, for example, in some specific embodiments, the group of inverted data is FF and 00, and the FF and 00 are written into the memory cell for subsequently adjusting the read voltage.

Further, in some embodiments, the step of adjusting the voltage value according to the processing result of 0 or 1 to obtain a 01 image varying with the voltage comprises:

reading the data in the memory cell with an initial low voltage value to ensure that the XOR result is 0;

increasing the voltage value to obtain an exclusive or result of 1;

increasing the voltage value results in an exclusive or result of 0.

Through the technical scheme, an initial low voltage is used for reading data in the memory unit, in order to enable the initial low voltage to fall in the range of the erasing voltage, the initial exclusive-or result is 0, then the exclusive-or result is 1 by gradually increasing the voltage value, then the voltage is continuously increased to obtain the exclusive-or result is 0, therefore, the range of the exclusive-or result is 1 can be obtained, and the voltage value range corresponding to the range of the exclusive-or result is 1 is the range of the normal reading voltage.

For example, in some embodiments, reading is performed with an initial voltage a, an exclusive-or result is 0, then the voltage value is gradually increased, when the voltage is increased to a voltage b, an exclusive-or result is 1, the voltage value is continuously increased, when the voltage is increased to a voltage c, an exclusive-or result is 0, then a range of the voltage value bc is a normal read voltage, and a voltage in the range of the voltage bc can be used as the voltage value of the read configuration information.

Further, in some embodiments, the step of increasing the voltage value to obtain an xor result of 1 includes:

and adjusting the initial low voltage value according to the preset minimum gear voltage value to obtain an exclusive OR result of 1.

Through the technical scheme, a minimum gear voltage value is preset, and when the initial low voltage value is adjusted, the amplitude of each adjustment is the minimum gear voltage value, so that a more accurate result can be obtained, wherein the smaller the value of the minimum gear voltage value is, the more accurate the result is.

For example, in some embodiments, the xor result of 1v to 2v is 0, the xor result of 2v to 3v is 1, the xor result of 3v to 4v is 0, when the minimum shift voltage value is 0.5v, the voltage value read at a certain time is 1.8v, the xor result at this time is 0, the adjusted voltage is 2.3v, the xor result at this time is 1, the adjustment is continued, the voltage values are 2.8v and 3.3v, when the minimum shift voltage value is 0.3 v, the xor result is 0, the range of 2.3v to 2.8v is determined to be the normal read voltage, when the minimum shift voltage value is 0.1v, the range of 2v to 3v is determined to be the normal read voltage by the same principle, and therefore, when the voltage value is adjusted, the determination result can be more accurate by presetting the voltage value of the minimum shift, and thus, the determination result can be more accurate by the voltage value of the minimum shift when the voltage value is adjusted

Further, in some embodiments, the step of increasing the voltage value to obtain an exclusive or result of 0 includes:

and adjusting the voltage value when the XOR result is 1 according to the preset minimum gear voltage value so as to obtain the XOR result of 0.

Through above-mentioned technical scheme, with the aforesaid is the same, through presetting a minimum gear voltage value, when adjusting initial low-voltage value, the amplitude of adjustment at every turn is this minimum gear voltage value, can obtain more accurate result like this, and wherein, the numerical value of minimum gear voltage value is less, and the result is more accurate.

Further, in some embodiments, the step of using the voltage value corresponding to the position of 1 in the 01 image as the voltage value of the reading configuration information includes:

and taking the voltage value corresponding to the middle value of the position 1 in the 01 image as the voltage value of the reading configuration information.

By the technical scheme, the voltage value corresponding to the intermediate value of the position where the XOR result is 1 is used as the voltage value of the reading configuration information, so that errors caused by data fluctuation can be avoided, and the correctness of the subsequent reading configuration information value is ensured, wherein the more accurate the range of the XOR result 1 is obtained, the closer the intermediate value is to the real intermediate value, the more suitable the voltage value is to be used as the voltage value applied to the storage unit in the subsequent reading configuration information.

Further, in some embodiments, the step of adjusting the voltage value according to the processing result of 0 or 1 to obtain a 01 image varying with the voltage comprises:

and when an exclusive-or result obtained by reading the unequal data by using one initial voltage value is 1, increasing and decreasing the initial voltage value to obtain a voltage value range with the exclusive-or result of 1.

With the above technical solution, since the initial read voltage may directly fall within the normal read voltage range, but the initial voltage may be close to the erase voltage or the program voltage, which may bring unstable results, when the initial xor result is 1, it is necessary to increase and decrease the initial voltage value to obtain an accurate range of the xor result being 1, so as to determine the voltage value applied to the memory cell most suitable for reading the configuration information subsequently.

Specifically, in some embodiments, a set of data is set in the memory cell in advance, the set of data is FF and 00, when a read operation is performed, an initial low voltage is used for reading, for example, a voltage of 0.5v is used for reading, when 0.5v falls in an erase voltage interval, the result of reading the FF and 00 is the same, the read data is marked as 0 through an exclusive or process, then the read data is adjusted according to a preset minimum shift voltage value, for example, the minimum shift voltage value is 0.1v, the adjusted voltage values are 0.6v and 0.7v.. the read data is normal FF and 00 when the voltage value is 1v and falls within a normal read voltage range, the result of the exclusive or process is marked as 1 because the read result is inconsistent, and then the adjustment continues according to the minimum shift voltage value, for example, 1.1v, 1.2v.. when the voltage value is 1.5v, the read voltage falls within the range of the programming voltage, so that the data read from FF and 00 are the same, and the read voltage is marked as 0 after XOR processing, so that the 01 image can be obtained, and the voltage value corresponding to the position of 1 on the 01 image is 1v-1.5v, then 1v-1.5v is the normal read voltage, and then the middle value of 1v-1.5v, namely 1.25v is taken as the voltage value of the read configuration information.

The above data are for illustration purposes and do not represent actual parameter values.

In a second aspect, the present application further provides a method for adjusting a read operation voltage value, where the following technical solution includes:

a first obtaining module 210, configured to obtain a reading result of a set of non-equivalent data preset in a storage unit;

the first processing module 220 is configured to perform xor processing on the read result to obtain a processing result of 0 or 1;

the second processing module 230 is configured to adjust the voltage value according to the processing result of 0 or 1 to repeatedly read non-equivalent data to obtain a 01 image changing with the voltage, and use the voltage value corresponding to the position of 1 in the 01 image as the voltage value of the read configuration information.

Through the above technical solution, the first obtaining module 210 is configured to obtain a set of reading results of unequal data preset in the storage unit, then the first processing module 220 performs xor processing on the reading results, the unequal reading results can be labeled as 1 through xor processing, if the results obtained by reading the unequal data are equivalent, the results obtained through xor processing are labeled as 0, in normal reading, since the data in the storage unit are unequal, when reading is performed at a normal reading voltage, the reading results are also unequal, and the results obtained by performing xor processing on the unequal reading results are 1, so that the corresponding reading voltage is a normal reading voltage when the xor result is 1, and when the xor result is 0, it indicates that the unequal reading results are equivalent, at this time, the reading voltage is indicated, in the 01 image changed with the voltage, the range of 0 represents the abnormal reading voltage range, and the range of 1 represents the normal reading voltage range, so the voltage value corresponding to the position of 1 can be used as the voltage value of the reading configuration information.

In a third aspect, the present application further provides an electronic device 300, which includes a processor 310 and a memory 320, where the memory 320 stores computer-readable instructions, and when the computer-readable instructions are executed by the processor 310, the steps in the foregoing method are executed.

By the above technical solution, the processor 310 and the memory 320 are interconnected and communicate with each other through a communication bus and/or other form of connection mechanism (not shown), and the memory 320 stores a computer program executable by the processor 310, and when the computing device runs, the processor 310 executes the computer program to execute the method in any optional implementation manner of the foregoing embodiment to implement the following functions: acquiring a reading result of a group of unequal data preset in a storage unit; performing exclusive or processing on the reading result to obtain a processing result of 0 or 1; and adjusting the voltage value according to the processing result of 0 or 1, repeatedly reading unequal data to obtain a 01 image changing along with the voltage, and taking the voltage value corresponding to the position of 1 in the 01 image as the voltage value of the reading configuration information.

In a fourth aspect, the present application also provides a storage medium having a computer program stored thereon, where the computer program is executed by a processor to perform the steps of the above method.

Through the technical scheme, when being executed by a processor, the computer program executes the method in any optional implementation manner of the embodiment to realize the following functions: acquiring a reading result of a group of unequal data preset in a storage unit; performing exclusive or processing on the reading result to obtain a processing result of 0 or 1; and adjusting the voltage value according to the processing result of 0 or 1, repeatedly reading unequal data to obtain a 01 image changing along with the voltage, and taking the voltage value corresponding to the position of 1 in the 01 image as the voltage value of the reading configuration information.

The storage medium may be implemented by any type of volatile or nonvolatile storage device or combination thereof, such as a Static Random Access Memory (SRAM), an Electrically Erasable Programmable Read-Only Memory (EEPROM), an Erasable Programmable Read-Only Memory (EPROM), a Programmable Read-Only Memory (PROM), a Read-Only Memory (ROM), a magnetic Memory, a flash Memory, a magnetic disk, or an optical disk.

In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways. The above-described embodiments of the apparatus are merely illustrative, and for example, the division of the units is only one logical division, and there may be other divisions when actually implemented, and for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection of devices or units through some communication interfaces, and may be in an electrical, mechanical or other form.

In addition, units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.

Furthermore, the functional modules in the embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.

The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.