1. The array substrate is characterized by comprising a display area and a frame area, wherein the frame area is positioned at the periphery of the display area and comprises a wiring area;

a substrate;

a plurality of signal lines at least partially located in the display area, extending in a first direction and arranged in a second direction; the first direction intersects the second direction;

the connecting wires are at least partially positioned in the wiring area and comprise first connecting wires, and the first connecting wires are positioned on one side, away from the substrate, of the signal wires;

the first wire changing layer is positioned between the display area and the wiring area and is positioned on one side, away from the substrate, of the signal wire and the connecting wire, and the first wire changing layer is electrically connected with the signal wire through a first through hole and is electrically connected with the first connecting wire through a second through hole;

at least one protection line, along the first direction, the at least one protection line is located between the wiring area and the display area, and the protection line and the first line changing layer are on the same layer; the voltage value applied to the signal line is a first voltage, the voltage value applied to the protection line is a second voltage, and the first voltage is greater than or equal to the second voltage.

2. The array substrate of claim 1, further comprising a first common electrode line between the first wire-changing layer and the display area along the first direction;

the at least one protection line comprises a first protection line, and the first protection line is located between the first wire changing layer and the first common electrode wire along the first direction.

3. The array substrate of claim 2, wherein the at least one protection line further comprises a second protection line, and the second protection line is located between the first wire-replacement layer and the wire area along the first direction.

4. The array substrate of claim 3, wherein the first protection line has a width greater than a width of the second protection line along the first direction.

5. The array substrate of claim 1, further comprising a first common electrode line between the first wire-changing layer and the display area along the first direction;

the at least one protection line includes a first protection line, and the first protection line is located between the first common electrode line and the display region along the first direction.

6. The array substrate of claim 1, further comprising at least one auxiliary line perpendicular to the substrate, the auxiliary line overlapping the protection line, the auxiliary line and the protection line being electrically connected through a third via.

7. The array substrate of claim 6, wherein the at least one auxiliary line comprises a first auxiliary line, and the first auxiliary line is on the same layer as the signal line.

8. The array substrate of claim 6, wherein the at least one auxiliary line comprises a second auxiliary line, the second auxiliary line being in a same layer as the first connecting line.

9. The array substrate of claim 1, wherein the first wire-exchanging layer and the protection line each comprise a metal oxide.

10. The array substrate of claim 1, wherein the plurality of connecting lines further comprises a second connecting line, and the second connecting line is in the same layer as the signal line;

the first wire changing layer is electrically connected with the signal wire through a fourth through hole and electrically connected with the second connecting wire through a fifth through hole.

11. The array substrate of claim 1, further comprising a first common electrode line, an electrostatic discharge line, and a plurality of first electrostatic discharge circuits;

along the first direction, the first common electrode line is positioned between the first wire changing layer and the display area;

the electrostatic discharge line and the plurality of first electrostatic discharge circuits are both located between the first common electrode line and the wiring area;

the first end of the first static electricity discharge circuit is electrically connected with the signal wire, and the second end of the first static electricity discharge circuit is electrically connected with the static electricity discharge wire;

the first electrostatic discharge circuit comprises a plurality of first thin film transistors, each first thin film transistor comprises a grid electrode, a first pole, a second pole and a second wire changing layer, and the second wire changing layer is electrically connected with the first pole of each first thin film transistor through a sixth through hole and is electrically connected with the grid electrode through a seventh through hole;

the first wire exchanging layer and the second wire exchanging layer are on the same layer, and the first wire exchanging layer, the first thin film transistor and the second wire exchanging layer are arranged along the second direction.

12. The array substrate of claim 1, further comprising a constant voltage low potential line located on a side of the wiring region away from the display region and electrically connected to the protection line.

13. The array substrate of claim 12, further comprising a step area, wherein the step area and the frame area are respectively located at two adjacent sides of the display area;

the array substrate further comprises a flexible circuit board, the flexible circuit board is bound on the step area, and the constant-voltage low-potential line is electrically connected with the flexible circuit board.

14. The array substrate of claim 12, further comprising a step area, wherein the step area and the frame area are respectively located at two adjacent sides of the display area;

the array substrate further comprises a display test circuit and a plurality of data lines, and the data lines are located in the display area; the display test circuit is positioned in the step area and comprises a plurality of second thin film transistors, a plurality of test signal lines and at least one test control line, wherein each second thin film transistor comprises a grid electrode, a first electrode and a second electrode, the grid electrode of each second thin film transistor is electrically connected with the test control line, the first electrode of each second thin film transistor is electrically connected with the test signal line, and the second electrode of each second thin film transistor is electrically connected with the data line;

the constant-voltage low-potential line is electrically connected with the test control line.

15. The array substrate of claim 12, further comprising at least one second electrostatic discharge circuit and a second common electrode line on a side of the constant-voltage low potential line away from the display area,

and the first end of the second static discharge circuit is electrically connected with the constant-voltage low-potential wire, and the second end of the second static discharge circuit is electrically connected with the second common electrode wire.

16. The array substrate of claim 1, wherein a thickness of the first wire-exchange layer is greater than or equal to 1000 angstroms in a direction perpendicular to the substrate.

17. The array substrate of claim 1, further comprising a pixel driving circuit, wherein the pixel driving circuit is located in the display region and comprises a third thin film transistor, the third thin film transistor comprises a gate, a first pole and a second pole, and the gate of the third thin film transistor is electrically connected to the signal line;

the third thin film transistor is an N-type thin film transistor.

18. The array substrate of claim 1, wherein the number of the first vias overlapping the first layer of lines is greater than 2 and the number of the second vias overlapping the first layer of lines is greater than 2 in a direction perpendicular to the substrate.

19. The array substrate of claim 1, further comprising a gate driving circuit, wherein the gate driving circuit comprises a plurality of cascaded shift registers, each shift register comprises a fourth thin film transistor, a source and a drain of each fourth thin film transistor are in the same layer as the first connection line, and a source or a drain of each fourth thin film transistor is electrically connected to the first connection line.

20. The array substrate of claim 19, wherein the gate driving circuit is located in the wiring region.

21. A liquid crystal display panel comprising the array substrate of any one of claims 1 to 20, a liquid crystal layer, and an opposite substrate, wherein the liquid crystal layer is disposed between the array substrate and the opposite substrate.

22. A display device comprising the liquid crystal display panel according to claim 21.

Background

The display panel has a circuit for driving the display panel to emit light, and the low-level voltage signal is a signal required by the circuit, so that a low-level voltage signal line needs to be provided in the display panel to transmit the low-level voltage signal. Low level signals are transmitted in the panel, sometimes needing to be changed from a first metal to a second metal through a wire change layer.

However, the wire-changing layer on the low-level voltage signal line is prone to electrochemical reaction during the operation of the display panel, and the wire-changing layer is corroded, so that the failure of the wire-changing layer causes a risk of open circuit.

Disclosure of Invention

The invention provides an array substrate, a liquid crystal display panel and a display device, which weaken electrochemical reaction on a first wire changing layer and reduce the risk of open circuit caused by corrosion of the first wire changing layer.

In a first aspect, an embodiment of the present invention provides an array substrate, including a display area and a frame area, where the frame area is located at a periphery of the display area and includes a wiring area;

a substrate;

a plurality of signal lines at least partially located in the display area, extending in a first direction and arranged in a second direction; the first direction intersects the second direction;

the connecting wires are at least partially positioned in the wiring area and comprise first connecting wires, and the first connecting wires are positioned on one side, away from the substrate, of the signal wires;

the first wire changing layer is positioned between the display area and the wiring area and is positioned on one side, away from the substrate, of the signal wire and the connecting wire, and the first wire changing layer is electrically connected with the signal wire through a first through hole and is electrically connected with the first connecting wire through a second through hole;

at least one protection line, along the first direction, the at least one protection line is located between the wiring area and the display area, and the protection line and the first line changing layer are on the same layer; the voltage value applied to the signal line is a first voltage, the voltage value applied to the protection line is a second voltage, and the first voltage is greater than or equal to the second voltage.

In a second aspect, an embodiment of the present invention provides a liquid crystal display panel, including the array substrate of the first aspect, a liquid crystal layer, and an opposite substrate, where the liquid crystal layer is located between the array substrate and the opposite substrate.

In a third aspect, an embodiment of the present invention provides a display device, including the liquid crystal display panel according to the second aspect.

The embodiment of the invention provides an array substrate, wherein a first wire changing layer is electrically connected with a signal wire through a first through hole, and the first wire changing layer is electrically connected with a first connecting wire through a second through hole, so that the first connecting wire changing layer is electrically connected with the signal wire through the first wire changing layer. According to the embodiment of the invention, the protection lines in the same layer as the first wire replacement layer are arranged, at least one protection line is arranged between the wiring area and the display area, and the same voltage as the signal line is applied to the protection line, or the voltage lower than the signal line is applied to the protection line, so that the electrochemical reaction is preferentially generated on the protection line in the working process of the liquid crystal display panel, the electrochemical reaction generated on the first wire replacement layer is weakened, and the open circuit risk caused by corrosion of the first wire replacement layer is reduced.

Drawings

Fig. 1 is a schematic structural diagram of an array substrate according to an embodiment of the present invention;

FIG. 2 is an enlarged schematic view of the region S1 in FIG. 1;

FIG. 3 is a schematic cross-sectional view along AA' of FIG. 2;

fig. 4 is a schematic structural diagram of another array substrate according to an embodiment of the present invention;

FIG. 5 is a schematic cross-sectional view taken along the direction BB' in FIG. 4;

fig. 6 is a schematic structural diagram of another array substrate according to an embodiment of the present invention;

FIG. 7 is a schematic cross-sectional view taken along the direction CC' in FIG. 6;

fig. 8 is a schematic structural diagram of another array substrate according to an embodiment of the present invention;

fig. 9 is a schematic structural diagram of another array substrate according to an embodiment of the present invention;

FIG. 10 is a schematic cross-sectional view taken along direction DD' in FIG. 9;

fig. 11 is a circuit diagram of a first electrostatic discharge circuit according to an embodiment of the invention;

FIG. 12 is a schematic cross-sectional view taken along direction EE' of FIG. 9;

FIG. 13 is an enlarged schematic view of the area S2 in FIG. 1;

fig. 14 is a schematic structural view of another array substrate according to an embodiment of the invention;

fig. 15 is a schematic structural view of another array substrate according to an embodiment of the invention;

fig. 16 is a schematic structural diagram of a second electrostatic discharge circuit according to an embodiment of the present invention;

fig. 17 is a schematic structural diagram of another array substrate according to an embodiment of the invention;

fig. 18 is a circuit diagram of a pixel driving circuit according to an embodiment of the invention;

FIG. 19 is an enlarged schematic view of the area S3 in FIG. 1;

fig. 20 is a schematic structural view of another array substrate according to an embodiment of the present invention;

fig. 21 is a schematic structural view of another array substrate according to an embodiment of the invention;

fig. 22 is a circuit diagram of a shift register according to an embodiment of the present invention;

FIG. 23 is a timing diagram illustrating operation of the shift register of FIG. 22;

FIG. 24 is a circuit diagram of another shift register according to an embodiment of the present invention;

FIG. 25 is a timing diagram illustrating operation of the shift register of FIG. 24;

fig. 26 is a schematic structural view of another array substrate according to an embodiment of the invention;

fig. 27 is a schematic cross-sectional view illustrating an lcd panel according to an embodiment of the present invention;

fig. 28 is a schematic structural diagram of a display device according to an embodiment of the present invention;

fig. 29 is a schematic structural diagram of another display device according to an embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.

Fig. 1 is a schematic structural diagram of an array substrate according to an embodiment of the present invention, fig. 2 is an enlarged structural diagram of an area S1 in fig. 1, and fig. 3 is a schematic sectional diagram along an AA' direction in fig. 2, referring to fig. 1, fig. 2 and fig. 3, the array substrate includes a display area 101 and a frame area 104, the frame area 104 is located at a periphery of the display area 101, and the frame area 104 includes a wiring area 102. The array substrate includes a substrate 10, a plurality of signal lines 21, a plurality of connection lines 22, a first wire exchange layer 231, and at least one protection line 30. The plurality of signal lines 21 are at least partially located in the display area 101, and the plurality of signal lines 21 extend in a first direction and are arranged in a second direction. The signal line 21 may extend from the display area 101 to the frame area 104. The first direction intersects the second direction, and in one embodiment, the first direction and the second direction may be perpendicular to each other. In another embodiment, the first direction and the second direction may not be perpendicular and may form an included angle greater than 0 ° and less than 90 °. The plurality of connecting lines 22 are at least partially located in the wire area 102, and the connecting lines 22 may extend from within the wire area 102 to an area outside the wire area 102 within the frame area 104. The plurality of connection lines 22 includes a first connection line 221, and at least one of the plurality of connection lines 22 is the first connection line 221. The first connecting line 221 is located on the side of the signal line 21 away from the substrate 10. The metal film layer where the signal line 21 is located between the metal film layer where the first connection line 221 is located and the substrate 10. The first wire-exchanging layer 231 is located between the display area 101 and the wire-arranging area 102. The first wire-exchanging layer 231 is located on the side of the signal line 21 and the connecting line 22 away from the substrate 10. The metal film layer where the first connecting line 221 is located between the film layer where the first wire-exchanging layer 231 is located and the substrate 10. The first wire exchanging layer 231 is electrically connected to the signal line 21 through the first via 241, and the first wire exchanging layer 231 is electrically connected to the first connecting line 221 through the second via 242. Along the first direction, at least one protection line 30 is located between the wiring region 102 and the display region 101. The protection line 30 is on the same layer as the first wire-exchanging layer 231, and the protection line 30 and the first wire-exchanging layer 231 may be formed by using the same material and in the same process. The voltage applied to the signal line 21 has a first voltage, the voltage applied to the protection line 30 has a second voltage, and the first voltage is greater than or equal to the second voltage. It should be noted that the first voltage applied to the signal line 21 may include an active level applied to the signal line 21 and an inactive level, and the second voltage is less than or equal to the active level applied to the signal line 21 and less than or equal to the inactive level applied to the signal line 21.

In the array substrate according to the embodiment of the invention, the first wire exchanging layer 231 is electrically connected to the signal line 21 through the first via 241, and the first wire exchanging layer 231 is electrically connected to the first connecting wire 221 through the second via 242, so that the first wire exchanging layer 231 electrically connects the first connecting wire 221 to the signal line 21. In the embodiment of the present invention, the protection lines 30 on the same layer as the first wire-changing layer 231 are disposed, at least one protection line 30 is disposed between the wiring region 102 and the display region 101, and the same voltage as the signal line 21 is applied to the protection line 30, or a voltage lower than the signal line 21 is applied to the protection line 30, so that during the operation of the liquid crystal display panel, an electrochemical reaction preferentially occurs on the protection line 30, the electrochemical reaction occurring on the first wire-changing layer 231 is reduced, and the risk of open circuit caused by corrosion of the first wire-changing layer 231 is reduced.

Exemplarily, referring to fig. 2 and 3, the plurality of connection lines 22 further includes a second connection line 222, and the second connection line 222 is on the same layer as the signal line 21. The first connecting lines 221 and the second connecting lines 222 are different in layer, so that the frame occupied by the first connecting lines 221 arranged in a single film layer is smaller, the frame occupied by the second connecting lines 222 arranged in the single film layer is smaller, and the narrow frame of the array substrate is realized. Since the first connecting line 221 and the signal line 21 are located in different metal film layers, the first wire exchanging layer 231 needs to be disposed to electrically connect the first connecting line 221 and the signal line 21. The first wire layer 231 may include a metal oxide, and a low level signal (e.g., -10V to-7V) is present on the signal line 21 during the operation of the display panel. For example, the first wire exchanging layer 231 includes metal oxide including indium tin oxide, and trivalent indium on the first wire exchanging layer 231 of low level is reduced to elemental indium, so that the first wire exchanging layer 231 is easily corroded and has a short circuit risk. The embodiment of the invention provides that the array substrate has the protection lines 30, the protection lines 30 with lower voltage are easier to corrode than the first wire changing layer 231, the corrosion position is transferred from the first wire changing layer 231 to the protection lines 30, and the electrochemical reaction on the first wire changing layer 231 is weakened.

Exemplarily, referring to fig. 2 and 3, the signal line 21 may be a scan line for providing a scan control signal. It should be noted that the driving circuit of the signal line 21 may use a separate driving chip, or the gate driving circuit may be integrated in the array substrate. As shown in fig. 1, wiring regions 102 may be provided on both opposite sides of the display region 101, enabling bilateral driving of the signal lines 21. In another embodiment, the wiring region 102 may be provided only on one side of the display region 101, and one-side driving of the signal line 21 may be realized.

Fig. 4 is a schematic structural diagram of another array substrate according to an embodiment of the present invention, fig. 5 is a schematic structural diagram of a cross-section along a direction BB' in fig. 4, and referring to fig. 4 and fig. 5, the array substrate further includes a first common electrode line 41. Along the first direction, the first common electrode lines 41 are located between the first cross-line layer 231 and the display area 101.

Exemplarily, referring to fig. 4 and 5, the first common electrode line 41 is on the same layer as the first connection line 221, the display wire replacement layer 33 is on the same layer as the first wire replacement layer 231, and the first common electrode line 41 is electrically connected to the display wire replacement layer 33 through the eighth via 248. The display wire layer 33 is used to connect the first common electrode line 41 with the film layer in the display area 101, for example, the common electrode layer in the display area 101 is electrically connected with the first common electrode line 41 through the display wire layer 33. In one embodiment, the common electrode layer in the display region 101 may be electrically connected to the display wire layer 33 at the same layer. In another embodiment, the common electrode layer in the display region 101 may be electrically connected to a different layer from the display wiring layer 33.

Based on the above embodiment, with continued reference to fig. 4 and 5, the at least one protection line 30 includes the first protection line 31. In the first direction, the first protection line 31 is located between the first cross-line layer 231 and the first common electrode line 41. In the embodiment of the present invention, the first protection line 31 is located between the first wire exchanging layer 231 and the first common electrode line 41, and a distance between the first protection line 31 and the first common electrode line 41 is smaller than a distance between the first wire exchanging layer 231 and the first common electrode line 41, so that an electrolytic cell is more easily formed between the first protection line 31 and the first common electrode line 41 compared to the first wire exchanging layer 231. The distance between the first protection line 31 and the first common electrode line 41 refers to a vertical distance between a side of the first protection line 31 adjacent to the first common electrode line 41 and a side of the first common electrode line 41 adjacent to the first protection line 31 along the first direction. The distance between the first wire exchange layer 231 and the first common electrode line 41 refers to a vertical distance between a side of the first wire exchange layer 231 adjacent to the first common electrode line 41 and a side of the first common electrode line 41 adjacent to the first wire exchange layer 231. The distance between two devices in embodiments of the present invention may be the vertical distance between the adjacent side edges of the two devices. The first common electrode line 41 serves as an anode of the electrolytic cell, the first protection line 31 serves as a cathode of the electrolytic cell, electrochemical reaction preferentially occurs on the first protection line 31, the electrochemical reaction occurring on the first wire changing layer 231 is weakened, and the risk of disconnection caused by corrosion of the first wire changing layer 231 is reduced.

Fig. 6 is a schematic structural view of another array substrate according to an embodiment of the present invention, fig. 7 is a schematic structural view of a cross-section taken along a direction CC' in fig. 6, and referring to fig. 6 and 7, at least one protection line 30 further includes a second protection line 32. The array substrate includes two protection lines 30, which are a first protection line 31 and a second protection line 32. Along the first direction, the second protection line 32 is located between the first wire-exchanging layer 231 and the wire-arranging region 102. In the embodiment of the present invention, the array substrate includes the first protection line 31 and the second protection line 32, an electrolytic cell is formed between the first protection line 31 and the first common electrode line 41, a voltage on the second protection line 32 is less than or equal to a voltage on the first wire exchange layer 231, the protection line 30 having a lower voltage is more easily corroded than the first wire exchange layer 231, the electrolytic cell is formed between the second protection line 32 and the first common electrode line 41, electrochemical reactions preferentially occur on the first protection line 31 and the second protection line 32, so that a corrosion position is transferred from the first wire exchange layer 231 to the first protection line 31 and the second protection line 32, and the electrochemical reactions occurring on the first wire exchange layer 231 are weakened. In the first direction, the first wire exchanging layer 231 is located between the first protection wire 31 and the second protection wire 32, and the first protection wire 31 and the second protection wire 32 surround the first wire exchanging layer 231, so that the electrochemical reaction occurring on the first wire exchanging layer 231 is further reduced.

Alternatively, referring to fig. 6, in the first direction, the width of the first protection line 31 is D1, and the width of the second protection line 32 is D2. D1 is greater than D2. In the embodiment of the present invention, along the first direction, the distance between the first protection line 31 and the first common electrode line 41 is smaller than the distance between the second protection line 32 and the first common electrode line 41, the first protection line 31 is more easily corroded than the second protection line 32, the corrosion degree of the first protection line 31 is greater than the corrosion degree of the second protection line 32, and in order to prevent the first protection line 31 from being corroded and broken, the first protection line 31 protects the first wire changing layer 231, the width of the first protection line 31 is further set to be greater than the width of the second protection line 32, so that a greater width is set for the first protection line 31 which is more easily corroded, and the corrosion resistance of the first protection line 31 is enhanced.

Fig. 8 is a schematic structural view of another array substrate according to an embodiment of the present invention, and referring to fig. 8, the array substrate further includes a first common electrode line 41. Along the first direction, the first common electrode lines 41 are located between the first cross-line layer 231 and the display area 101. The at least one protection line 30 includes a first protection line 31. The first protection line 31 is located between the first common electrode line 41 and the display region 101 in the first direction. In the embodiment of the present invention, the first protection line 31 is located on the side of the first line changing layer 231 away from the first common electrode line 41, and an electrochemical reaction preferentially occurs on the first protection line 31, so that the corrosion position is transferred from the first line changing layer 231 to the first protection line 31, the electrochemical reaction occurring on the first line changing layer 231 is weakened, and the risk of open circuit caused by corrosion of the first line changing layer 231 is reduced. Further, the distance between the first protection line 31 and the first common electrode line 41 may be smaller than the distance between the first wire changing layer 231 and the first common electrode line 41, so as to reduce the distance between the first protection line 31 and the first common electrode line 41, so that corrosion is more likely to occur on the first protection line 31, and the protection capability of the first protection line 31 on the first wire changing layer 231 is enhanced.

Alternatively, referring to fig. 6 and 7, the array substrate further includes at least one auxiliary line 25. The auxiliary line 25 overlaps the protection line 30 in a direction perpendicular to the substrate 10, and the auxiliary line 25 and the protection line 30 are electrically connected through the third via 243. In the embodiment of the present invention, the auxiliary line 25 overlaps the protection line 30 and is electrically connected to the protection line 30 through the third via 243, the auxiliary line 25 is connected in parallel to the protection line 30, and the resistance of the auxiliary line 25 after being connected in parallel to the protection line 30 is smaller than that of the protection line 30, so that the loss of the electrical signal on the protection line 30 is reduced, and the low voltage state is maintained at each position on the protection line 30.

Alternatively, referring to fig. 6 and 7, the at least one auxiliary line 25 includes a first auxiliary line 251, the first auxiliary line 251 being in the same layer as the signal line 21. In the embodiment of the present invention, the first auxiliary line 251 and the signal line 21 are on the same layer, and the first auxiliary line 251 and the signal line 21 may be formed by using the same material and in the same process, so that the process is saved. The first auxiliary line 251 overlaps the protection line 30 and is electrically connected through the third via 243, the first auxiliary line 251 is connected in parallel with the protection line 30, and the resistance of the first auxiliary line 251 after being connected in parallel with the protection line 30 is smaller than that of the protection line 30, so that the loss of the electrical signal on the protection line 30 is reduced, the low voltage state is maintained at each position on the protection line 30, and the low voltage state is maintained at each position on the protection line 30.

Alternatively, referring to fig. 6 and 7, the at least one auxiliary line 25 includes a second auxiliary line 252, and the second auxiliary line 252 is in a same layer as the first connection line 221. In the embodiment of the invention, the second auxiliary line 252 and the first connection line 221 are on the same layer, and the second auxiliary line 252 and the first connection line 221 can be formed by the same material and in the same process, so that the process is saved. The second auxiliary line 252 overlaps the protection line 30 and is electrically connected through the third via 243, the second auxiliary line 252 is connected in parallel with the protection line 30, and the resistance of the second auxiliary line 252 after being connected in parallel with the protection line 30 is smaller than that of the protection line 30, so that the loss of the electrical signal on the protection line 30 is reduced, the loss of the electrical signal on the protection line 30 is maintained in a low voltage state at each position, the loss of the electrical signal on the protection line 30 is reduced, and the low voltage state at each position on the protection line 30 is maintained.

Alternatively, referring to fig. 6 and 7, the first wire exchange layer 231 and the protection line 30 each include a metal oxide. In the embodiment of the present invention, the first wire replacement layer 231 and the protection lines 30 both include metal oxide, and in the working process of the display panel, a reduction reaction occurs on the low-level protection lines 30 to reduce the metal oxide into a simple substance. For example, the metal oxide includes indium tin oxide, trivalent indium on the low-level protection line 30 is reduced to elemental indium, so that the protection line 30 having a lower voltage is more easily corroded than the first wire exchange layer 231, and the electrochemical reaction occurring on the first wire exchange layer 231 is reduced by transferring the corrosion position from the first wire exchange layer 231 to the first protection line 31 and the second protection line 32.

Fig. 9 is a schematic structural diagram of another array substrate according to an embodiment of the invention, and fig. 10 is a schematic structural diagram of a cross-section along a direction DD' in fig. 9, referring to fig. 9 and fig. 10, based on the above embodiment, the plurality of connection lines 22 further includes a second connection line 222, and the second connection line 222 is on the same layer as the signal line 21. The second connection lines 222 are different from the first connection lines 221 in layers, and the metal film layer where the second connection lines 222 are located is located between the metal film layer where the first connection lines 221 are located and the substrate 10, so that the width of the wiring area 102 is reduced and the frame of the array substrate is reduced compared with single-layer wiring. The first wire exchanging layer 231 is electrically connected to the signal line 21 through the fourth via 244, and the first wire exchanging layer 231 is electrically connected to the second connection line 222 through the fifth via 245. Since the first connection line 221 and the signal line 21 are electrically connected through the first wire replacement layer 231, in the embodiment of the present invention, the second connection line 222 is further electrically connected with the signal line 21 through the first wire replacement layer 231, so that the first connection line 221 and the second connection line 222 are both electrically connected through the first wire replacement layer 231, and the signal lines 21 electrically connected with the first connection line 221 and the second connection line 222 have the same load, thereby balancing the load on each signal line 21. In other embodiments, the second connection line 222 on the same layer may be directly electrically connected to the signal line 21.

Fig. 11 is a circuit schematic diagram of a first electrostatic discharge circuit according to an embodiment of the present invention, and fig. 12 is a schematic diagram of a cross-sectional structure along EE' direction in fig. 9, and optionally, referring to fig. 9, fig. 11 and fig. 12, the array substrate further includes a first common electrode line 41, an electrostatic discharge line 50 and a plurality of first electrostatic discharge circuits 61 (one first electrostatic discharge circuit 61 is illustrated in fig. 9). Along the first direction, the first common electrode lines 41 are located between the first cross-line layer 231 and the display area 101. The electrostatic discharge line 50 and the plurality of first electrostatic discharge circuits 61 are each located between the first common electrode line 41 and the wiring region 102. The first end of the first electrostatic discharge circuit 61 is electrically connected to the signal line 21, and specifically, the first end of the first electrostatic discharge circuit 61 may be electrically connected to a portion of the signal line 21 extending to the frame region 104. The second end of the first electrostatic discharge circuit 61 is electrically connected to the electrostatic discharge line 50. The first static electricity discharge circuit 61 can conduct static electricity on the signal line 21 to the static electricity discharge line 50, preventing accumulation of static electricity on the signal line 21. The first electrostatic discharge circuit 61 includes a plurality of first thin film transistors 71. The first thin film transistor 71 includes a gate 713, a first pole 711, a second pole 712, and a second wire exchange layer 232. The second wire exchanging layer 232 is electrically connected to the first pole 711 of the first thin film transistor 71 through a sixth via 246, and the second wire exchanging layer 232 is electrically connected to the gate 713 of the first thin film transistor 71 through a seventh via 247. The first pole 711 of the first thin film transistor 71 and the gate 713 of the first thin film transistor 71 are electrically connected through the second wiring layer 232. The first wire exchanging layer 231 and the second wire exchanging layer 232 are on the same layer, and the first wire exchanging layer 231, the first thin film transistor 71 and the second wire exchanging layer 232 are arranged along the second direction. In the embodiment of the present invention, each signal line 21 is correspondingly provided with one first electrostatic discharge circuit 61, and the first electrostatic discharge circuit 61 includes the second wire changing layer 232. The protection line 30 protects not only the first wire-changing layer 231 but also transfers the corrosion position from the first wire-changing layer 231 to the protection line 30, the protection line 30 also protects the second wire-changing layer 232 in the first electrostatic discharge circuit 61, and transfers the corrosion position from the second wire-changing layer 232 to the protection line 30, thereby reducing the risk of open circuit caused by corrosion of the first wire-changing layer 231 and reducing the risk of open circuit caused by corrosion of the second wire-changing layer 232 in the first electrostatic discharge circuit 61. In addition, the first wire exchanging layer 231, the first thin film transistor 71 and the second wire exchanging layer 232 are arranged along the second direction, and the first wire exchanging layer 231, the first thin film transistor 71 and the second wire exchanging layer 232 are overlapped along the distance occupied in the first direction, so that the distance of the frame in the first direction is reduced, and the narrow frame of the array substrate is realized.

Alternatively, referring to fig. 11, the first electrostatic discharge circuit 61 includes four first thin film transistors 71, which are a first sub thin film transistor T1, a second sub thin film transistor T2, a third sub thin film transistor T3, and a fourth sub thin film transistor T4, respectively. The gate of the first sub-thin film transistor T1 is electrically connected to the first electrode of the first sub-thin film transistor T1, the gate of the second sub-thin film transistor T2 is electrically connected to the first electrode of the second sub-thin film transistor T2, the second electrode of the first sub-thin film transistor T1 is electrically connected to the first electrode of the second sub-thin film transistor T2, the first electrode of the first sub-thin film transistor T1 is electrically connected to the second electrode of the second sub-thin film transistor T2, and the first electrode of the first sub-thin film transistor T1 is electrically connected to the electrostatic discharge line 50. A gate electrode of the third sub thin film transistor T3 is electrically connected to the first electrode of the third sub thin film transistor T3, a gate electrode of the fourth sub thin film transistor T4 is electrically connected to the first electrode of the fourth sub thin film transistor T4, a second electrode of the third sub thin film transistor T3 is electrically connected to the first electrode of the fourth sub thin film transistor T4, a first electrode of the third sub thin film transistor T3 is electrically connected to the second electrode of the fourth sub thin film transistor T4, and a gate electrode of the fourth sub thin film transistor T4 is electrically connected to the signal line 21. The gate electrode of the third sub-thin film transistor T3 is electrically connected to the gate electrode of the second sub-thin film transistor T2.

Fig. 13 is an enlarged schematic structural view of an area S2 in fig. 1, and referring to fig. 1 and 13, the array substrate further includes a constant voltage low potential line VGL, the constant voltage low potential line VGL is located on a side of the wiring region 102 away from the display region 101, and the constant voltage low potential line VGL is electrically connected to the protection line 30. In the embodiment of the invention, the array substrate further includes a constant voltage low potential line VGL, the constant voltage low potential line VGL is electrically connected to the protection line 30, and the protection line 30 is supplied with the second voltage through the constant voltage low potential line VGL.

For example, referring to fig. 13, the constant voltage low potential line VGL, the first auxiliary line 251, and the signal line 21 are in the same layer, and the constant voltage low potential line VGL, the first auxiliary line 251, and the signal line 21 may be formed of the same material and in the same process, thereby saving the process. The constant-voltage low-potential line VGL and the first auxiliary line 251 are electrically connected in the same layer and are electrically connected to the protection line 30 through the first auxiliary line 251, thereby supplying the second voltage to the protection line 30.

Fig. 14 is a schematic structural view of another array substrate according to an embodiment of the present invention, and referring to fig. 14, the array substrate further includes a step region 103, and the step region 103 and the wiring region 102 are respectively located at two adjacent sides of the display region 101. Illustratively, the wiring region 102 may be located on the left and right sides of the array substrate, and the step region 103 may be located on the lower side of the array substrate. The array substrate further comprises a flexible circuit board FPC, the flexible circuit board FPC is bound on the step area 103, and the constant voltage low potential line VGL is electrically connected with the flexible circuit board FPC. In the embodiment of the invention, the constant voltage low potential line VGL is electrically connected with the flexible circuit board FPC, that is, the constant voltage low potential line VGL is led out from the flexible circuit board FPC, and the pin on the flexible circuit board FPC provides a second voltage for the constant voltage low potential line VGL.

Fig. 15 is a schematic structural view of another array substrate according to an embodiment of the present invention, and referring to fig. 15, the array substrate further includes a step region 103, and the step region 103 and the wiring region 102 are respectively located at two adjacent sides of the display region 101. The array substrate further comprises a display test circuit 80 and a plurality of data lines 26, wherein the data lines 26 are located in the display area 101. The plurality of data lines 26 extend in the second direction and are arranged in the first direction. The display test circuit 80 is located in the step area 103, and the display test circuit 80 includes a plurality of second thin film transistors 72, a plurality of test signal lines 82, and at least one test control line 81. The second thin film transistor 72 includes a gate electrode, a first electrode, and a second electrode, the gate electrode of the second thin film transistor 72 is electrically connected to the test control line 81, the first electrode of the second thin film transistor 72 is electrically connected to the test signal line 82, and the second electrode of the second thin film transistor 72 is electrically connected to the data line 26. The constant-voltage low-potential line VGL is electrically connected to the test control line 81. In the embodiment of the present invention, the array substrate further includes a display test circuit 80, and when performing a VT test, the second thin film transistor 72 is turned on by applying a corresponding signal to the test control line 81, and then the test signal is provided to the corresponding data line 26 through the corresponding test control line 81, so as to perform the VT test. After the VT test, i.e., during normal use of the array substrate, the second thin film transistor 72 is turned off by applying a low-level signal to the test control line 81, the constant voltage low potential line VGL is electrically connected to the test control line 81, and the test control line 81 supplies a second voltage to the constant voltage low potential line VGL.

Exemplarily, referring to fig. 15, the plurality of second thin film transistors 72 in the test circuit 80 are shown as a first switching tube 721, a second switching tube 722 and a third switching tube 723, respectively. The plurality of test signal lines 82 include a first test signal line 821, a second test signal line 822, and a third test signal line 823. The first pole of the first switch tube 721 is electrically connected to the first test signal line 821, the first pole of the second switch tube 722 is electrically connected to the second test signal line 822, and the first pole of the third switch tube 723 is electrically connected to the third test signal line 823.

Fig. 16 is a schematic structural diagram of a second electrostatic discharge circuit according to an embodiment of the present invention, and referring to fig. 13 and 16, the array substrate further includes at least one second electrostatic discharge circuit 62 (one second electrostatic discharge circuit 62 is illustrated in fig. 13) and a second common electrode line 42, which are located on a side of the constant-voltage low-potential line VGL away from the display area 101. A first terminal of the second electrostatic discharge circuit 62 is electrically connected to the constant voltage low potential line VGL, and a second terminal of the second electrostatic discharge circuit 62 is electrically connected to the second common electrode line 42. In the embodiment of the present invention, the second static electricity discharging circuit 62 is further connected to the constant voltage low potential line VGL, and the second static electricity discharging circuit 62 can conduct the static electricity on the constant voltage low potential line VGL and the protection line 30 to the second common electrode line 42, so as to prevent the static electricity from being accumulated on the constant voltage low potential line VGL and the protection line 30.

Exemplarily, referring to fig. 13 and 16, the second electrostatic discharge circuit 62 includes a plurality of first thin film transistors 71. Referring to fig. 9 in combination, the first thin film transistor 71 includes a gate 713, a first pole 711, a second pole 712, and a second wire exchange layer 232. The second wire exchanging layer 232 is electrically connected to the first pole 711 of the first thin film transistor 71 through a sixth via 246, and the second wire exchanging layer 232 is electrically connected to the gate 713 of the first thin film transistor 71 through a seventh via 247. The first pole 711 of the first thin film transistor 71 and the gate 713 of the first thin film transistor 71 are electrically connected through the second wiring layer 232. The first wire exchanging layer 231 and the second wire exchanging layer 232 are on the same layer, and the first wire exchanging layer 231, the first thin film transistor 71 and the second wire exchanging layer 232 are arranged along the second direction. In the embodiment of the present invention, the protection line 30 also protects the second wire exchanging layer 232 in the second electrostatic discharge circuit 62, and reduces a risk of an open circuit caused by corrosion of the second wire exchanging layer 232 in the second electrostatic discharge circuit 62.

Referring to FIG. 10, the thickness of the first wire-exchanging layer 231 is W, which is greater than or equal to 1000 angstroms, in the direction perpendicular to the substrate. In the prior art, the thickness of the wire-changing layer is usually 500 angstroms to 750 angstroms, and in the embodiment of the present invention, the thickness of the first wire-changing layer 231 is greater than or equal to 1000 angstroms, so that the corrosion resistance of the first wire-changing layer 231 is enhanced by increasing the thickness of the first wire-changing layer 231. It should be noted that the manner of increasing the thickness of the first wire-exchanging layer 231 may be applied to various embodiments of the present invention.

Fig. 17 is a schematic structural diagram of another array substrate according to an embodiment of the present invention, fig. 18 is a schematic circuit diagram of a pixel driving circuit according to an embodiment of the present invention, and referring to fig. 17 and fig. 18, the array substrate further includes a pixel driving circuit 83, and the pixel driving circuit 83 is located in the display region 101. The plurality of pixel driving circuits 83 may be arrayed in the first direction and the second direction in the display region 101. The pixel driving circuit 83 includes a third thin film transistor 73, the third thin film transistor 73 includes a gate, a first pole, and a second pole, and the gate of the third thin film transistor 73 is electrically connected to the signal line 21. The third thin film transistor 73 is an N-type thin film transistor. In the embodiment of the present invention, the signal line 21 is electrically connected to the gate of the third thin film transistor 73, and the third thin film transistor 73 is an N-type thin film transistor, so that when the electrical signal on the signal line 21 is at a low level, the N-type thin film transistor is turned off, and the low level is an inactive level of the third thin film transistor 73; when the electric signal on the signal line 21 is at a high level, the N-type thin film transistor is turned on, and the high level is the active level of the third thin film transistor 73. Since the low level is an inactive level of the third thin film transistor 73, a time period during which the low level is applied to the signal line 21 is longer than a time period during which the high level is applied to the signal line 21, and the low level is applied to the signal line 21 for a long period of time, it is particularly necessary to be protected by the protection line 30. Note that the high level on the signal line 21 is higher than the low level on the signal line 21, and the high level on the signal line 21 and the level on the signal line 21 are both voltages applied to the signal line 21, and therefore the high level on the signal line 21 and the level on the signal line 21 are both the first voltage.

Alternatively, referring to fig. 18, the pixel drive circuit 83 includes a third thin film transistor 73, a pixel drive transistor 831, a capacitor 832, and a light emitting element EL. When the pixel driving circuit 83 is in operation, the scanning signal input from the signal line 21 controls the third thin film transistor 73 to be turned on, the data signal input from the data line 26 and the voltage signal input from the power signal terminal VEE charge the capacitor 832, and the pixel driving transistor 831 controls the driving current for driving the light emitting element EL to generate a light emitting display. It should be noted that the light emitting element EL in the embodiment of the present invention may be an organic light emitting element or an inorganic light emitting element, the pixel driving circuit 83 provided in the embodiment of the present invention is only an example, and is not a limitation to the present invention, and the array substrate in each embodiment of the present invention may be applied to an organic light emitting display panel, a micro light emitting diode display panel, a liquid crystal display panel, and the like.

Fig. 19 is an enlarged schematic structural view of the region S3 in fig. 1, and referring to fig. 1 and 19, the plurality of connection lines 22 extend in the second direction and are arranged in the first direction. The array substrate further comprises a third electrostatic discharge circuit 63 and a fourth electrostatic discharge circuit 64, wherein a first end of the third electrostatic discharge circuit 63 is electrically connected to the electrostatic discharge line 50, a second end of the third electrostatic discharge circuit 63 is electrically connected to the first common electrode line 41, and the third electrostatic discharge circuit 63 can conduct static electricity on the electrostatic discharge line 50 to the first common electrode line 41 to prevent static electricity accumulation on the electrostatic discharge line 50. A first end of the fourth electrostatic discharge circuit 64 is electrically connected to the protection line 30 (specifically, the second protection line 32), a second end of the fourth electrostatic discharge circuit 64 is electrically connected to the first common electrode line 41, and the fourth electrostatic discharge circuit 64 may conduct static electricity on the protection line 30 to the first common electrode line 41, so as to prevent static electricity on the protection line 30 from accumulating. The circuit structures of the third electrostatic discharge circuit 63 and the fourth electrostatic discharge circuit 64 are similar to the circuit structure of the first electrostatic discharge circuit 61, and are not described again here.

Alternatively, referring to fig. 4 and 5, the number of first vias 241 overlapping the first cross-line layer 231 is greater than 2 and the number of second vias 242 overlapping the first cross-line layer 231 is greater than 2 in a direction perpendicular to the substrate 10. In the embodiment of the present invention, at least 3 first vias 241 are disposed to overlap with the first wire exchanging layer 231 in a direction perpendicular to the substrate 10, so as to electrically connect the first wire exchanging layer 231 with the signal line 21. At least 3 second via holes 242 are arranged to overlap the first wire changing layer 231, and the first wire changing layer 231 is electrically connected with the first connecting wire 221. Therefore, the number of the first via holes 241 and the second via holes 242 is increased, and even if the first wire changing layer 231 at one or two of the first via holes 241 is corroded and the first wire changing layer 231 at one or two of the second via holes 242 is corroded, the electrical connection between the signal line 21 and the first connecting line 221 can be ensured, so that the corrosion resistance of the first wire changing layer 231 is enhanced. It should be noted that the manner of increasing the number of the first via 241 and the second via 242 may be applied to the embodiments of the present invention.

Fig. 20 is a schematic structural diagram of another array substrate according to an embodiment of the present invention, fig. 21 is a schematic structural diagram of another array substrate according to an embodiment of the present invention, fig. 22 is a circuit diagram of a shift register according to an embodiment of the present invention, referring to fig. 20 to fig. 22, the array substrate further includes a gate driving circuit 84, the gate driving circuit 84 includes a plurality of cascaded shift registers 841, the shift registers 841 includes a fourth thin film transistor 74, a source and a drain of the fourth thin film transistor 74 are both on the same layer as the first connection line 221, and a source or a drain of the fourth thin film transistor 74 is electrically connected to the first connection line 221. In the embodiment of the invention, the array substrate further comprises the gate driving circuit 84, and the gate driving circuit 84 is integrated in the peripheral area of the array substrate, so that the integration level of the display device is effectively improved and the manufacturing cost of the display device is reduced while the narrow frame design is realized. One end of the first connection line 221 is electrically connected to the source or drain of the fourth thin film transistor 74, and the other end of the first connection line 221 is electrically connected to the signal line 21 through the first wire exchange layer 231.

Fig. 23 is a timing diagram illustrating operation of the shift register shown in fig. 22, and referring to fig. 22 and fig. 23, an embodiment of the invention provides a shift register 841 including: a first transistor M1, a second transistor M2, a third transistor M3 (the third transistor M3 is the fourth thin film transistor 74), a fourth transistor M4, a fifth transistor M5, and a sixth transistor M6. A gate of the first transistor M1 is electrically connected to the first clock signal terminal CK1, a source of the first transistor M1 is electrically connected to the first input terminal IN1, a drain of the first transistor M1 is electrically connected to a source of the second transistor M2 and a gate of the sixth transistor M6 is electrically connected to a point N1; the gate of the second transistor M2 is electrically connected to the first level signal terminal VGLP, the source of the second transistor M2 and the drain of the first transistor M1 and the gate of the sixth transistor M6 are electrically connected to point N1, the drain of the second transistor M2 and the gate of the third transistor M3 are electrically connected to point N3; the gate of the third transistor M3 is electrically connected to the drain of the second transistor M2, the source of the third transistor M3 is electrically connected to the second clock signal terminal CK2, and the drain of the third transistor M3 is electrically connected to the signal line 21 and the drain of the fifth transistor M5; the gate of the fourth transistor M4 is electrically connected to the source thereof and to the second input terminal IN2, the drain of the fourth transistor M4 is electrically connected to the gate of the fifth transistor M5 and the drain of the sixth transistor M6 at point N2; the gate of the fifth transistor M5, the drain of the fourth transistor M4 and the drain of the sixth transistor M6 are electrically connected to the point N2, the source of the fifth transistor M5 is electrically connected to the second level signal terminal VGH and the source of the sixth transistor M6, and the drain of the fifth transistor M5 is electrically connected to the signal line 21 and the drain of the third transistor M3; the gate of the sixth transistor M6 is electrically connected to the drain of the first transistor M1 and the source of the second transistor M2, the source of the sixth transistor M6 is electrically connected to the second level signal terminal VGH and the source of the fifth transistor M5, the drain of the sixth transistor M6 is electrically connected to the drain of the fourth transistor M4 and the gate of the fifth transistor M5 at point N2. The first transistor M1, the second transistor M2, the third transistor M3, the fourth transistor M4, the fifth transistor M5 and the sixth transistor M6 are all PMOS transistors.

IN this embodiment, the input signal of the first level signal terminal VGLP is a low level signal, the input signal of the second level signal terminal VGH is a high level signal, the first input terminal IN1 is connected to the first input signal, the second input terminal IN2 is connected to the second input signal, the first clock signal terminal CK1 is connected to the first clock signal, and the second clock signal terminal CK2 is connected to the second clock signal, wherein the second clock signal is an inverted signal of the first clock signal.

The driving process of the shift register provided by the embodiment of the invention is divided into three stages, namely a reset stage a, a shift stage b and a turn-off stage c.

Resetting the phase a:

the first clock signal end CK1 is connected to a first clock signal, the first clock signal is a low-level pulse signal, and is a low-level signal in the reset stage a, and the first transistor M1 is turned on; the first transistor M1 transmits the low-level signal inputted from the first input terminal IN1 to the gate of the sixth transistor M6 and the source of the second transistor M2, and the potential at the point N1 is low, so that the sixth transistor M6 is turned on; since the source of the sixth transistor M6 is connected to the second level signal terminal VGH, the second level signal terminal VGH is connected to the second level signal, the second level signal is a high level signal, that is, the signal level value is constant, and the level value is higher than the level value of the first level signal appearing later, the sixth transistor M6 transmits the high level signal to the gate of the fifth transistor M5, the potential at the point N2 is high level, the fifth transistor M5 is turned off, and thus the fifth transistor M5 does not affect the change of the output value; the first level signal terminal VGLP is connected to a first level signal, the first level signal is a low level signal, that is, the level value of the signal is constant, and the level value is lower than that of the second level signal, so as to turn on the second transistor M2; the second transistor M2 transmits the low level signal transmitted by the first transistor M1 to the gate of the third transistor M3, the potential at the point N3 is low, and the third transistor M3 is turned on; since the fifth transistor M5 does not affect the variation of the output value, the output of the signal line 21 is only the value transmitted by the third transistor M3, which is the inverted signal of the first clock signal, and is at a high level, i.e., the output of the output terminal OUT is also at a high level, so that the whole register is reset.

And a shifting stage b:

the first clock signal terminal CK1 is switched on to the first clock signal and changes to high level, the first transistor M1 is turned off, the potential at the point N1 keeps the low level in the reset stage a, the sixth transistor M6 is continuously turned on, because the gate of the second transistor M2 is constantly a low level signal, the second transistor M2 is continuously turned on, and the third transistor M3 is also continuously turned on; at this time, the second clock signal connected to the second clock signal terminal CK2 becomes low level, and due to the coupling effect of the circuit, the potential at the point N3 is pulled lower, and the second transistor M2 at this time can suppress the leakage current of the parasitic capacitor from being too large, thereby achieving the effect of maintaining the circuit stable. Meanwhile, the second input terminal IN2 is still connected to the high level, the fourth transistor M4 is continuously turned off, the gate of the fifth transistor M5 is still connected to the high level connected to the second level signal terminal transmitted by the sixth transistor M6, the fifth transistor M5 is turned off, the output value of the output terminal is not affected, and only the third transistor M3 transmits the low level connected to the second clock signal terminal to the output terminal, so that the shift function of the shift register is embodied, that is, the low level pulse signal of the input terminal is shifted by one stage for output.

Since the shift register of this embodiment is usually used in a gate driver, it will also have a holding function for a period of time, and the shift register needs to keep a good high level output, which is the off-phase c:

the first clock signal connected from the first clock signal terminal CK1 changes to low level, turning on the first transistor M1; the first transistor M1 transmits the high level connected by the first input terminal IN1 to the gate of the sixth transistor M6 and the source of the second transistor M2, and the potential at the point N1 is high, turning off the sixth transistor M6; since the gate of the second transistor M2 is constantly a low-level signal, the second transistor M2 is turned on continuously and transmits a high-level signal transmitted by the first transistor M1 to the gate of the third transistor M3, the potential at the point N3 is high, the third transistor M3 is turned off, and the third transistor M3 does not affect the output of the circuit; the second input signal inputted from the second input terminal IN2 becomes low level, turning on the fourth transistor M4; the fourth transistor M4 transmits a low level signal to the gate of the fifth transistor M5, and since the sixth transistor M6 is turned off, the potential at the point N2 is low, and the fifth transistor M5 is turned on; the fifth transistor M5 transmits the high level signal connected to the second level signal terminal to the output terminal.

Connected to the first and second clock signal terminals CK1 and CK2 are clock signal lines, connected to the first level signal terminal VGLP is a constant voltage low potential line VGL, connected to the second level signal terminal VGH is a high level signal line, and the gate driving circuit signal lines may include the clock signal line, the low level signal line, and the high level signal line. The first transistor M1, the second transistor M2, the third transistor M3, the fourth transistor M4, the fifth transistor M5 and the sixth transistor M6 may be thin film transistors.

Illustratively, referring to fig. 21, the shift register 841 and the connection lines 22 are both located in the wiring region 102. The protection line 30 is located between the wiring region 102 and the first common electrode line 41, the protection line 30 includes a first protection line 31 and a second protection line 32, and both the first protection line 31 and the second protection line 32 are located between the wiring region 102 and the first common electrode line 41.

As shown in fig. 22, the gate of the fourth transistor M4 is electrically connected to the source of the fourth transistor M4, the drain of the fourth transistor M4 is electrically connected to the gate of the fifth transistor M5, the source of the second transistor M2 is electrically connected to the gate of the sixth transistor M6, and the drain of the second transistor M2 is electrically connected to the gate of the third transistor M3. When the source or drain of a thin film transistor in the shift register 841 is electrically connected to its own gate through a wire changing layer, the source or drain of the thin film transistor is electrically connected to the gate of another thin film transistor through a wire changing layer. The protection line 30 can also protect the line change layer in the shift register 841.

Fig. 24 is a circuit diagram of another shift register according to an embodiment of the present invention, fig. 25 is a timing diagram illustrating operations of the shift register shown in fig. 24, and referring to fig. 24 and fig. 25, a shift register 841 according to an embodiment of the present invention includes: a first transistor M1, a second transistor M2, a third transistor M3, a fourth transistor M4, a fifth transistor M5 (the fifth transistor M5 is the fourth thin film transistor 74), a sixth transistor M6, and a seventh transistor M7. The gate of the first transistor M1 is electrically connected to the first input control terminal STP, the source of the first transistor M1 is electrically connected to the second level signal terminal VGH, and the drain of the first transistor M1 is electrically connected to the PU node. The gate of the second transistor M2 is electrically connected to the signal line 21 (i.e., Gn +1) driven by the next stage of shift register, the source of the second transistor M2 is electrically connected to the PU node, and the drain of the second transistor M2 is electrically connected to the first level signal terminal VGLP. The gate of the third transistor M3 is electrically connected to the PD node, the source of the third transistor M3 is electrically connected to the PU node, and the drain of the third transistor M3 is electrically connected to the first level signal terminal VGLP. The gate of the fourth transistor M4 is electrically connected to the PU node, the source of the fourth transistor M4 is electrically connected to the PD node, and the drain of the fourth transistor M4 is electrically connected to the first level signal terminal VGLP. The gate of the fifth transistor M5 is electrically connected to the PU node, the source of the fifth transistor M5 is electrically connected to the second clock signal terminal CK2, and the drain of the fifth transistor M5 is electrically connected to the signal line 21 (i.e., Gn) driven by the shift register of the current stage. A gate of the sixth transistor M6 is electrically connected to the PD node, a source of the sixth transistor M6 is electrically connected to the drain of the fifth transistor M5, and a drain of the sixth transistor M6 is electrically connected to the first level signal terminal VGLP. The gate of the seventh transistor M7 is electrically connected to the first clock signal terminal CK1, the source of the seventh transistor M7 is electrically connected to the drain of the fifth transistor M5, and the drain of the seventh transistor M7 is electrically connected to the first level signal terminal VGLP. The shift register 841 also includes a first capacitor C1 and a second capacitor C2. The first plate of the first capacitor C1 is electrically connected to the second clock signal terminal CK2, and the second plate of the first capacitor C1 is electrically connected to the PD node. The first plate of the second capacitor C2 is electrically connected to the PU node, and the second plate of the second capacitor C2 is electrically connected to the drain of the fifth transistor M5.

Fig. 26 is a schematic structural diagram of another array substrate according to an embodiment of the present invention, and referring to fig. 20 and 26, a gate driving circuit 84 is located in the wiring region 102, and the gate driving circuit 84 includes a plurality of cascaded shift registers 841. The shift register 841 and the connection line 22 are located in the wiring region 102. The protection line 30 includes a first protection line 31 and a second protection line 32, the first protection line 31 is located between the wiring region 102 and the first common electrode line 41, the wiring region 102 is located between the first protection line 31 and the second protection line 32, and the shift register 841 is surrounded by the first protection line 31 and the second protection line 32, which further reduces the electrochemical reaction occurring on the wire-change layer in the shift register 841.

Exemplarily, referring to fig. 26, the first protection line 31 is located between the shift register 841 and the first common electrode line 41 in the first direction. The distance between the first protection line 31 and the first common electrode line 41 is smaller than the distance between the shift register 841 and the first common electrode line 41, and an electrolytic cell is more easily formed between the first protection line 31 and the first common electrode line 41 than the shift register 841. The first common electrode line 41 serves as an anode of the electrolytic cell, the first protection line 31 serves as a cathode of the electrolytic cell, and an electrochemical reaction preferentially occurs on the first protection line 31, so that the electrochemical reaction occurring on the shift register 841 is reduced, and the risk of circuit breaking caused by corrosion of a wire changing layer in the shift register 841 is reduced.

Fig. 27 is a schematic cross-sectional view of a liquid crystal display panel according to an embodiment of the invention, and referring to fig. 27, the liquid crystal display panel includes an array substrate 110, a liquid crystal layer 130, and a counter substrate 120. The liquid crystal layer 130 is located between the array substrate 110 and the opposite substrate 120. The liquid crystal layer 130 includes a plurality of liquid crystal molecules. The liquid crystal display panel in the embodiment of the invention may include the array substrate 110 in the above embodiment, so that the array substrate 110 has the beneficial effects that the electrochemical reaction occurring on the first wire replacement layer 231 is weakened, and the risk of open circuit caused by corrosion of the first wire replacement layer 231 is reduced. Furthermore, the working stability of the liquid crystal display panel is improved, and the service life of the liquid crystal display panel is prolonged.

Fig. 28 is a schematic structural diagram of a display device according to an embodiment of the present invention, and referring to fig. 28, the display device includes the liquid crystal display panel in the above embodiment. The display device can be a mobile phone, a tablet computer, a vehicle-mounted display device, an intelligent wearable device and the like.

Exemplarily, referring to fig. 28, the display device further includes a driving chip IC bound to the step area 103. In other embodiments, the driver chip IC may also be bonded to the flexible circuit board. The driver chip IC may be used to drive the signal lines 21 in the above-described embodiments, and the driver chip IC may be used to drive the data lines 26 in the above-described embodiments.

Fig. 29 is a schematic structural diagram of another display device according to an embodiment of the present invention, where the display device further includes a driving chip IC, and the driving chip IC is bound to the step area 103. The driving chip IC drives the driving gate driving circuit 84. Referring to fig. 20 in combination, the shift register 841 in the gate driver circuit 84 is electrically connected to the signal line 21. The driving gate drive circuit 84 may be used to drive the signal line 21 in the above-described embodiment. The driver chip IC may be used to drive the data lines 26 in the above-described embodiments.

It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.