Single crystal growth furnace with furnace cover blackening treatment

文档序号:3678 发布日期:2021-09-17 浏览:56次 中文

1. The utility model provides a single crystal growth furnace that bell blackening was handled, its characterized in that, include single crystal growth furnace body and install the bell at single crystal growth furnace body top, have water cooling system in the bell, just the inner wall of bell is provided with the bell heat-sink shell that is used for absorbing thermal radiation.

2. The single crystal growth furnace with the furnace cover blackened according to claim 1, wherein the furnace cover heat absorbing layer is a metal oxide film layer obtained by blackening an inner wall of the furnace cover.

3. The single crystal growth furnace for furnace cover blackening according to claim 1, wherein the single crystal growth furnace body comprises a furnace body, a heat-preserving container arranged in the furnace body, a crucible arranged in the heat-preserving container, a water-cooling heat shield arranged in the heat-preserving container and above the crucible, and a heater arranged in the heat-preserving container;

the water-cooling heat shield comprises a water-cooling heat shield body and two lifting arms which are arranged in a bilateral symmetry mode, the bottoms of the lifting arms are connected with the water-cooling heat shield body, the tops of the lifting arms penetrate out of the furnace cover, a circulating cooling water system is arranged in the water-cooling heat shield body, and cooling water flow channels communicated with the circulating cooling water system are arranged in the lifting arms;

the lifting arm is used for driving the water-cooling heat shield body to ascend or descend.

4. The furnace lid blackening treatment single crystal growth furnace as claimed in claim 3, wherein the inner wall of the water-cooling heat shield body is provided with a heat shield heat absorption layer.

5. The furnace cover blackening treatment single crystal growth furnace as claimed in claim 4, wherein the heat shield heat absorption layer is a metal oxide film layer obtained by blackening the inner wall of the water-cooling heat shield body.

6. The furnace lid blackening treated single crystal growth furnace according to claim 3, wherein the furnace body comprises an upper furnace barrel and a lower furnace barrel, and the lower furnace barrel is provided with a furnace body back cover; the heat-preserving barrel sequentially comprises an upper heat-preserving cover, an upper heat-preserving barrel, a main heat-preserving barrel and a lower heat-preserving barrel from top to bottom, the lower heat-preserving barrel is provided with a heat-preserving barrel sealing bottom, the top of the furnace body sealing bottom is provided with a supporting component, and the bottom of the heat-preserving barrel sealing bottom is connected with the supporting component;

the crucible is arranged in the main heat-insulating barrel, the water-cooling heat shield body is arranged in the upper heat-insulating barrel, and the top end of the rod support penetrates through the bottom sealing of the furnace and the bottom sealing of the heat-insulating barrel and then is connected with the bottom of the crucible;

a crucible side is arranged between the side wall of the crucible and the main heat-insulating barrel;

the heater comprises a main heater adjacent to the side wall of the crucible and a bottom heater adjacent to the bottom of the crucible.

7. A furnace lid blackening treatment type single crystal growth furnace according to any one of claims 3 to 6, wherein said crucible is a quartz crucible.

Background

Reducing cost and improving crystal quality have been the direction of efforts in the photovoltaic single crystal manufacturing industry.

The cost is reduced by two methods, firstly, the power consumption of the heater is reduced, the heat preservation is realized by increasing the heat preservation of the furnace body, the outer diameter of the single crystal furnace is gradually increased and reaches 1600mm, and the heat preservation of the thermal field is better and better; and secondly, the crystal pulling speed is improved by increasing the longitudinal temperature gradient of a growth interface and absorbing latent heat of crystallization. And a heat radiation heat absorption layer is added in the crystal growth channel to absorb crystallization latent heat, so that the longitudinal temperature gradient is improved. The inner wall blackening water-cooling heat shield is popularized in the photovoltaic industry on a large scale, the pulling speed is further improved, and a furnace cover is also an excellent scheme for blackening a furnace cover and increasing a heat radiation heat absorption layer.

In the aspect of improving the crystal quality, the higher the temperature and the longer the time of the crystal bar subjected to the heat history, the higher the secondary defects generated by crystal primary defects (such as oxygen precipitation, OISF nucleation centers, dislocation and the like), and various donors caused by interstitial oxygen are generated, wherein the donor heat donor is formed at 350-500 ℃, and the new donor is formed at 650-850 ℃. Therefore, the heat absorption layer for absorbing radiant heat is designed in the crystal growth channel to influence the crystal quality to a certain extent.

Disclosure of Invention

For the above reasons, a single crystal growth furnace for furnace lid blackening treatment is provided.

The technical means adopted by the invention are as follows:

the utility model provides a single crystal growth furnace that bell blackening was handled, includes single crystal growth furnace body and installs the bell at single crystal growth furnace body top, have water cooling system in the bell, just the inner wall of bell is provided with the bell heat-sink shell that is used for absorbing thermal radiation.

Further, the furnace cover heat absorption layer is a metal oxide film layer obtained by blackening the inner wall of the furnace cover.

Furthermore, the single crystal growth furnace body comprises a furnace body, a heat-preserving container arranged in the furnace body, a crucible arranged in the heat-preserving container, a water-cooling heat shield arranged in the heat-preserving container and positioned above the crucible, and a heater arranged in the heat-preserving container;

the water-cooling heat shield comprises a water-cooling heat shield body and two lifting arms which are arranged in a bilateral symmetry mode, the bottoms of the lifting arms are connected with the water-cooling heat shield body, the tops of the lifting arms penetrate out of the furnace cover, a circulating cooling water system is arranged in the water-cooling heat shield body, and cooling water flow channels communicated with the circulating cooling water system are arranged in the lifting arms;

the lifting arm is used for driving the water-cooling heat shield body to ascend or descend.

Furthermore, the inner wall of the water-cooling heat shield body is provided with a heat shield heat absorption layer.

Further, the heat-absorbing layer of the heat shield is a metal oxide film layer obtained by blackening the inner wall of the water-cooling heat shield body.

Further, the furnace body comprises an upper furnace barrel and a lower furnace barrel, and the lower furnace barrel is provided with a furnace body back cover; the heat-preserving barrel sequentially comprises an upper heat-preserving cover, an upper heat-preserving barrel, a main heat-preserving barrel and a lower heat-preserving barrel from top to bottom, the lower heat-preserving barrel is provided with a heat-preserving barrel sealing bottom, the top of the furnace body sealing bottom is provided with a supporting component, and the bottom of the heat-preserving barrel sealing bottom is connected with the supporting component;

the crucible is arranged in the main heat-insulating barrel, the water-cooling heat shield body is arranged in the upper heat-insulating barrel, and the top end of the rod support penetrates through the bottom sealing of the furnace and the bottom sealing of the heat-insulating barrel and then is connected with the bottom of the crucible;

a crucible side is arranged between the side wall of the crucible and the main heat-insulating barrel;

the heater comprises a main heater adjacent to the side wall of the crucible and a bottom heater adjacent to the bottom of the crucible.

The crucible is a quartz crucible.

Compared with the prior art, the invention has the following advantages:

1. the blackening heat radiation heat absorption layer is added on the inner wall of the furnace cover of the single crystal furnace, so that the blackening heat radiation heat absorption layer can effectively absorb the latent heat of crystallization released by a crystal bar above the water-cooling heat shield, has a certain effect on the diffusion of the latent heat of crystallization generated on a crystallization interface, and has the effects of improving the crystallization rate and the pulling speed.

2. The invention can make the crystal bar experience lower heat history temperature and shorter time, thus reducing heat donor and reducing secondary defect formed after crystal growth.

For the reasons, the invention can be widely popularized in the fields of monocrystalline silicon production and the like.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

FIG. 1 is a schematic view of a single crystal growing furnace with a furnace lid blackened according to an embodiment of the present invention.

In the figure: 1. a furnace cover; 2. a quartz crucible; 3. a bottom heater; 4. a silicon melt; 5. crystal bar; 6. a water-cooled heat shield body; 7. a main heater; 8. water cooling and heat shielding; 9. an upper heat preservation cover; 10. a furnace barrel is arranged; 11. feeding the furnace barrel; 12. a lift arm; 13. a cooling water flow passage; 14. a main heat-insulating cylinder; 15. a lower heat-preserving cylinder; 16. an upper heat preservation cylinder; 17. a furnace lid heat absorbing layer; 18. a heat shield heat sink layer; 19. a support rod; 20. the crucible side.

Detailed Description

It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.

The relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description. Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate. Any specific values in all examples shown and discussed herein are to be construed as exemplary only and not as limiting. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.

In the description of the present invention, it is to be understood that the orientation or positional relationship indicated by the directional terms such as "front, rear, upper, lower, left, right", "lateral, vertical, horizontal" and "top, bottom", etc., are generally based on the orientation or positional relationship shown in the drawings, and are used for convenience of description and simplicity of description only, and in the absence of any contrary indication, these directional terms are not intended to indicate and imply that the device or element so referred to must have a particular orientation or be constructed and operated in a particular orientation, and therefore should not be considered as limiting the scope of the present invention: the terms "inner and outer" refer to the inner and outer relative to the profile of the respective component itself.

Spatially relative terms, such as "above … …," "above … …," "above … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary term "above … …" can include both an orientation of "above … …" and "below … …". The device may be otherwise variously oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

It should be noted that the terms "first", "second", and the like are used to define the components, and are only used for convenience of distinguishing the corresponding components, and the terms have no special meanings unless otherwise stated, and therefore, the scope of the present invention should not be construed as being limited.

As shown in figure 1, the single crystal growth furnace for furnace cover blackening treatment comprises a single crystal growth furnace body and a furnace cover 1 arranged at the top of the single crystal growth furnace body, wherein a water cooling system is arranged in the furnace cover 1, and a furnace cover heat absorption layer 17 for absorbing heat radiation is arranged on the inner wall of the furnace cover 1.

Further, the furnace cover heat absorption layer 17 is a metal oxide film layer obtained by blackening the inner wall of the furnace cover.

Further, the single crystal growth furnace body comprises a furnace body, a heat-preserving container arranged in the furnace body, a quartz crucible 2 arranged in the heat-preserving container, a water-cooling heat shield arranged in the heat-preserving container and positioned above the quartz crucible 2, and a heater arranged in the heat-preserving container; the water-cooling heat shield 8 comprises a water-cooling heat shield body 6 and two lifting arms 12 which are arranged in bilateral symmetry, the bottoms of the lifting arms 12 are connected with the water-cooling heat shield body 6, the tops of the lifting arms 12 penetrate out of the furnace cover 1, a circulating cooling water system is arranged in the water-cooling heat shield body 16, and a cooling water runner 13 communicated with the circulating cooling water system is arranged in the lifting arms 12; cooling water flows into or out of the circulating cooling water system through the cooling water flow passage 13;

the inner wall of the water-cooling heat shield body 6 is provided with a heat shield heat absorption layer 18.

The heat-absorbing layer 18 is a metal oxide film layer obtained by blackening the inner wall of the water-cooling heat-shielding body 16.

The lifting arm 12 is used for driving the water-cooling heat shield body 6 to ascend or descend.

The furnace body comprises an upper furnace barrel 11 and a lower furnace barrel 10, and the lower furnace barrel 10 is provided with a furnace body back cover;

the heat-preserving barrel sequentially comprises an upper heat-preserving cover 9, an upper heat-preserving barrel 16, a main heat-preserving barrel 14 and a lower heat-preserving barrel 15 from top to bottom, and the lower heat-preserving barrel 15 is provided with a heat-preserving barrel sealing bottom;

the top of the furnace body back cover is provided with a support component, and the bottom of the heat-insulating barrel back cover is connected with the support component;

the quartz crucible 2 is arranged in the main heat-insulating barrel 14, the water-cooling heat-shielding body 6 is arranged in the upper heat-insulating barrel 16, and the top end of the rod support 19 penetrates through the bottom sealing bottom and the bottom sealing bottom of the heat-insulating barrel and then is connected with the bottom of the quartz crucible 2;

a crucible edge 20 is arranged between the side wall of the quartz crucible 2 and the main heat-insulating barrel 14;

the heaters include a main heater 7 near the side wall of the quartz crucible 2 and a bottom heater 3 near the bottom of the quartz crucible.

The crystal bar 5 is positioned at the symmetrical center of the two lifting arms 12; during the crystal pulling process, the silicon melt 4 in the quartz crucible 2 is supercooled and the seed crystal is fused with the silicon melt 4, so that the silicon melt 4 grows along the crystal orientation of the seed crystal and is converted from a liquid state to a solid state of the crystal bar 5, and the crystal bar 5 has latent heat of crystallization during the phase change process, and the latent heat of crystallization generates heat conduction in the crystal bar 5. The water-cooling heat shield body 6 and the furnace cover 1 which are arranged above the quartz crucible 2 absorb heat generated by the crystal bar 5 together, so that the crystal bar 5 is promoted to be cooled rapidly. The heat absorption layer 18 subjected to blackening treatment on the surface of the inner wall of the water-cooling heat shield can absorb heat radiation of a crystal growth interface and the crystal bar 5; the heat absorption layer 17 on the inner wall of the furnace cover mainly absorbs the latent heat of crystallization released by the crystal bar above the water-cooling heat shield.

The water-cooling heat shield 8 and the furnace cover 1 subjected to blackening synchronously absorb heat radiation up and down, so that crystallization latent heat is well dissipated, the heat history temperature of the crystal bar 5 is reduced, the time is shortened, the pulling speed is favorably improved, a heat donor is reduced, and secondary defects formed after crystal growth are reduced.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

完整详细技术资料下载
上一篇:石墨接头机器人自动装卡簧、装栓机
下一篇:长晶炉

网友询问留言

已有0条留言

还没有人留言评论。精彩留言会获得点赞!

精彩留言,会给你点赞!