1. A polishing method for the side edge of a copper target is characterized by comprising the following steps:

semi-automatic polishing treatment is carried out on the side edge of the copper target by adopting a handheld polishing device;

the semi-automatic polishing treatment comprises three polishing procedures, namely a first polishing procedure, a second polishing procedure and a third polishing procedure in sequence;

the feeding speed of each polishing procedure is decreased gradually.

2. The polishing method according to claim 1, further comprising a step of welding the copper target to the backing plate before the semi-automatic polishing process;

preferably, the backplate comprises a stainless steel backplate.

3. The polishing method according to claim 1 or 2, wherein the copper target comprises any one of a square copper target, a circular copper target, or a ring-shaped copper target.

4. A method of polishing according to any one of claims 1-3, wherein the hand-held polishing device is a pistol drill;

preferably, the head of the pistol drill is provided with a polishing wheel;

preferably, the surface of the polishing wheel is provided with a scouring pad.

5. The polishing method as recited in claim 4, wherein the specification of the scouring pad is 150-;

preferably, each polishing process uses a scouring pad of a particular gauge.

6. The polishing method as claimed in any one of claims 1 to 5, wherein the scouring pad specification adopted in the first polishing step is 150-;

preferably, the rotation speed of the polishing wheel adopted in the first polishing procedure is 600-;

preferably, the feeding speed of the first polishing process is 6-8 mm/min.

7. The polishing method as claimed in any one of claims 1 to 6, wherein the scouring pad specification adopted in the second polishing step is 240- > 320 #;

preferably, the rotation speed of the polishing wheel adopted in the second polishing procedure is 400-;

preferably, the feeding speed of the second polishing process is 4-6 mm/min.

8. The polishing method as claimed in any one of claims 1 to 7, wherein the scouring pad specification adopted in the third polishing step is 320-;

preferably, the rotation speed of the polishing wheel adopted in the third polishing procedure is 200-;

preferably, the feeding speed of the third polishing process is 2-4 mm/min.

9. The polishing method according to any one of claims 1 to 8, further comprising cleaning and drying the side of the copper target in sequence after the semi-automatic polishing process.

10. The polishing method according to any one of claims 1 to 9, comprising the steps of:

(1) welding the copper target material and the stainless steel back plate;

(2) semi-automatic polishing treatment is carried out on the side edge of the copper target by adopting a handheld polishing device; the handheld polishing equipment is a pistol drill with a polishing wheel arranged at the head, and scouring pads are arranged on the surface of the polishing wheel; the semi-automatic polishing treatment comprises three polishing procedures, namely a first polishing procedure, a second polishing procedure and a third polishing procedure in sequence; the specification of the scouring pad adopted in the first polishing procedure is 150-; the specification of the scouring pad adopted in the second polishing procedure is 240-; the specification of the scouring pad adopted in the third polishing procedure is 320-;

(3) sequentially cleaning and drying the side edge of the copper target material;

the copper target comprises any one of a square copper target, a round copper target or an annular copper target.

Background

The sputtering coating is a novel physical vapor phase coating mode in the field of current semiconductor manufacturing, and the specific working principle is as follows: applying orthogonal magnetic field and electric field between the sputtered target and anode, and filling inert gas into the high vacuum chamber; under the action of an electric field, the inert gas is ionized into positive ions and electrons, and the electrons emitted from the target are subjected to the action of the magnetic field and the ionization probability of the working gas is increased by applying a certain negative high voltage on the target, so that high-density plasma is formed near the cathode; the inert gas ions accelerate to fly to the sputtering surface of the target under the action of Lorentz force, so that atoms sputtered from the target separate from the sputtering surface with high kinetic energy and fly to the substrate for deposition and film formation.

In the manufacturing process of the target material, particularly for the copper target material, after the copper target material is welded with the back plate, the side edge of the copper target material is seriously oxidized due to the high welding temperature, and if the side edge of the copper target material is not treated in time, the oxide can cause serious adverse effect on the coating quality.

CN 111975465a discloses a polishing process of a sputtering surface of a molybdenum target, which comprises a first mechanical polishing, a second mechanical polishing, a third mechanical polishing and a fourth mechanical polishing which are sequentially performed; the feeding speed in the first mechanical polishing is 2-3 m/min; the feeding speed in the second mechanical polishing is 4-5 m/min; the feeding speed in the third mechanical polishing is 6-8 m/min; the feeding speed in the fourth mechanical polishing is 7-9 m/min. The invention realizes the uniform distribution of the surface stress of the polished target material and the uniform loss of the target material in the sputtering process by setting the polishing process of the sputtering surface of the molybdenum target material, and simultaneously ensures that the roughness is stabilized at 0.5-0.7 mu m and the stability of the product. However, the invention does not polish the sides of the target, and the polishing process is only applicable to molybdenum targets.

Therefore, how to provide a method for polishing the side edge of the copper target, which can thoroughly remove the oxide formed on the side edge of the target due to high welding temperature, thereby avoiding the adverse effect of the oxide on the coating quality in the sputtering process, and becomes a problem to be solved by technical personnel in the field at present.

Disclosure of Invention

Aiming at the defects in the prior art, the invention aims to provide a polishing method for the side edge of a copper target, which thoroughly removes oxides formed by welding the side edge of the target at high temperature, thereby avoiding the adverse effect of the oxides on the coating quality in the sputtering process.

In order to achieve the purpose, the invention adopts the following technical scheme:

the invention provides a polishing method for a side edge of a copper target, which comprises the following steps:

and carrying out semi-automatic polishing treatment on the side edge of the copper target by adopting a handheld polishing device.

The semi-automatic polishing treatment comprises three polishing procedures, namely a first polishing procedure, a second polishing procedure and a third polishing procedure in sequence.

The feeding speed of each polishing procedure is decreased gradually.

According to the invention, the side edge of the copper target is semi-automatically polished by using the handheld polishing equipment, so that compared with the traditional manual abrasive paper polishing, the labor and material resources are saved, the processing efficiency is improved, and the cost investment of using large polishing equipment is reduced; in addition, the sectional type polishing procedure improves the polishing precision, is favorable for timely adjusting the polishing conditions according to actual conditions, and achieves the purpose of thoroughly removing the oxide on the side of the target, thereby avoiding the adverse effect of the oxide on the coating quality in the sputtering process.

Preferably, the semi-automatic polishing process further comprises a welding process of the copper target and the back plate.

Preferably, the backplate comprises a stainless steel backplate.

According to the invention, the polishing treatment is arranged after the welding treatment, so that the oxide formed on the side edge of the target material due to the high welding temperature can be removed in time.

Preferably, the copper target comprises any one of a square copper target, a circular copper target or an annular copper target.

Preferably, the hand-held polishing device is a pistol drill.

Preferably, the head of the pistol drill is provided with a polishing wheel.

Preferably, the surface of the polishing wheel is provided with a scouring pad.

Preferably, the specification of the scouring pad is 150-.

Preferably, each polishing process uses a scouring pad of a particular gauge.

Preferably, the scouring pad specification adopted in the first polishing step is 150-.

Preferably, the first polishing process uses a polishing wheel speed of 600-.

Preferably, the feeding speed of the first polishing process is 6-8mm/min, such as 6mm/min, 6.2mm/min, 6.4mm/min, 6.6mm/min, 6.8mm/min, 7mm/min, 7.2mm/min, 7.4mm/min, 7.6mm/min, 7.8mm/min or 8mm/min, but not limited to the values listed, and other values not listed in the range of values are equally applicable.

Preferably, the scouring pad specification adopted by the second polishing process is 240-.

Preferably, the second polishing process uses a polishing wheel rotation speed of 400-.

Preferably, the feeding speed of the second polishing step is 4-6mm/min, such as 4mm/min, 4.2mm/min, 4.4mm/min, 4.6mm/min, 4.8mm/min, 5mm/min, 5.2mm/min, 5.4mm/min, 5.6mm/min, 5.8mm/min or 6mm/min, but not limited to the values listed, and other values not listed in the range of values are equally applicable.

Preferably, the scouring pad specification adopted in the third polishing step is 320-.

Preferably, the third polishing process uses a polishing wheel rotation speed of 200-.

Preferably, the feeding speed of the third polishing step is 2-4mm/min, such as 2mm/min, 2.2mm/min, 2.4mm/min, 2.6mm/min, 2.8mm/min, 3mm/min, 3.2mm/min, 3.4mm/min, 3.6mm/min, 3.8mm/min or 4mm/min, but not limited to the values listed, and other values not listed in this range are equally applicable.

In the invention, each polishing procedure adopts scouring pad with specific specification, and the rotating speed and the feeding speed of the polishing wheel are controlled to be sequentially reduced, so that the polishing amount of each polishing procedure is sequentially reduced, the polishing precision is convenient to improve, and the purpose of thoroughly removing oxides is achieved. In addition, the polishing amount is sequentially decreased, so that the excessive loss of the copper target material in the polishing process is avoided, and the utilization rate of raw materials is improved.

Preferably, the semi-automatic polishing treatment further comprises sequentially cleaning and drying the side edge of the copper target.

In the invention, the cleaning and drying remove the scraps remained on the surface of the target material in the polishing process, improve the cleanliness of the target material and avoid the adverse effect of impurities on the subsequent processing and film coating processes.

As a preferred embodiment of the present invention, the polishing method comprises the steps of:

(1) welding the copper target material and the stainless steel back plate;

(2) semi-automatic polishing treatment is carried out on the side edge of the copper target by adopting a handheld polishing device; the handheld polishing equipment is a pistol drill with a polishing wheel arranged at the head, and scouring pads are arranged on the surface of the polishing wheel; the semi-automatic polishing treatment comprises three polishing procedures, namely a first polishing procedure, a second polishing procedure and a third polishing procedure in sequence; the specification of the scouring pad adopted in the first polishing procedure is 150-; the specification of the scouring pad adopted in the second polishing procedure is 240-; the specification of the scouring pad adopted in the third polishing procedure is 320-;

(3) sequentially cleaning and drying the side edge of the copper target material;

the copper target comprises any one of a square copper target, a round copper target or an annular copper target.

Compared with the prior art, the invention has the beneficial effects that:

(1) according to the invention, the side edge of the copper target is semi-automatically polished by using the handheld polishing equipment, so that compared with the traditional manual abrasive paper polishing, the labor and material resources are saved, the processing efficiency is improved, and the cost investment of using large polishing equipment is reduced;

(2) the invention adopts the sectional type polishing procedure to improve the polishing precision, is beneficial to timely adjusting the polishing condition according to the actual situation, and achieves the purpose of thoroughly removing the oxide on the side of the target material, thereby avoiding the adverse effect of the oxide on the coating quality in the sputtering process.

Detailed Description

The technical solution of the present invention is further explained by the following embodiments.

Example 1

The embodiment provides a polishing method for a side edge of a copper target, which comprises the following steps:

(1) welding the square copper target and the stainless steel back plate;

(2) semi-automatic polishing treatment is carried out on the side edge of the copper target by adopting a handheld polishing device; the handheld polishing equipment is a pistol drill with a polishing wheel arranged at the head, and scouring pads are arranged on the surface of the polishing wheel; the semi-automatic polishing treatment comprises three polishing procedures, namely a first polishing procedure, a second polishing procedure and a third polishing procedure in sequence; the specification of the scouring pad adopted in the first polishing procedure is 200#, the rotating speed of the polishing wheel is 700r/min, and the feeding speed is 7 mm/min; the specification of the scouring pad adopted in the second polishing procedure is 280#, the rotating speed of the polishing wheel is 500r/min, and the feeding speed is 5 mm/min; the specification of the scouring pad adopted in the third polishing procedure is 400#, the rotating speed of the polishing wheel is 300r/min, and the feeding speed is 3 mm/min;

(3) and cleaning and drying the side edge of the copper target material in sequence.

In the embodiment, the side edge of the copper target is semi-automatically polished by the handheld polishing equipment, so that compared with the traditional manual abrasive paper polishing, the manual polishing equipment saves manpower and material resources, improves the processing efficiency and reduces the cost investment of large-scale polishing equipment; in addition, the sectional type polishing procedure improves the polishing precision, is favorable for timely adjusting the polishing conditions according to actual conditions, and achieves the purpose of thoroughly removing the oxide on the side of the target, thereby avoiding the adverse effect of the oxide on the coating quality in the sputtering process.

Example 2

The embodiment provides a polishing method for a side edge of a copper target, which comprises the following steps:

(1) welding the round copper target material and the stainless steel back plate;

(2) semi-automatic polishing treatment is carried out on the side edge of the copper target by adopting a handheld polishing device; the handheld polishing equipment is a pistol drill with a polishing wheel arranged at the head, and scouring pads are arranged on the surface of the polishing wheel; the semi-automatic polishing treatment comprises three polishing procedures, namely a first polishing procedure, a second polishing procedure and a third polishing procedure in sequence; the specification of the scouring pad adopted in the first polishing procedure is 180#, the rotating speed of the polishing wheel is 650r/min, and the feeding speed is 6.5 mm/min; the specification of the scouring pad adopted in the second polishing procedure is 260#, the rotating speed of the polishing wheel is 450r/min, and the feeding speed is 4.5 mm/min; the specification of the scouring pad adopted in the third polishing procedure is 360#, the rotating speed of the polishing wheel is 250r/min, and the feeding speed is 2.5 mm/min;

(3) and cleaning and drying the side edge of the copper target material in sequence.

In the embodiment, the side edge of the copper target is semi-automatically polished by the handheld polishing equipment, so that compared with the traditional manual abrasive paper polishing, the manual polishing equipment saves manpower and material resources, improves the processing efficiency and reduces the cost investment of large-scale polishing equipment; in addition, the sectional type polishing procedure improves the polishing precision, is favorable for timely adjusting the polishing conditions according to actual conditions, and achieves the purpose of thoroughly removing the oxide on the side of the target, thereby avoiding the adverse effect of the oxide on the coating quality in the sputtering process.

Example 3

The embodiment provides a polishing method for a side edge of a copper target, which comprises the following steps:

(1) welding the annular copper target and the stainless steel back plate;

(2) semi-automatic polishing treatment is carried out on the side edge of the copper target by adopting a handheld polishing device; the handheld polishing equipment is a pistol drill with a polishing wheel arranged at the head, and scouring pads are arranged on the surface of the polishing wheel; the semi-automatic polishing treatment comprises three polishing procedures, namely a first polishing procedure, a second polishing procedure and a third polishing procedure in sequence; the specification of the scouring pad adopted in the first polishing procedure is 220#, the rotating speed of the polishing wheel is 750r/min, and the feeding speed is 7.5 mm/min; the specification of the scouring pad adopted in the second polishing procedure is 300#, the rotating speed of the polishing wheel is 550r/min, and the feeding speed is 5.5 mm/min; the specification of the scouring pad adopted in the third polishing procedure is 450#, the rotating speed of the polishing wheel is 350r/min, and the feeding speed is 3.5 mm/min;

(3) and cleaning and drying the side edge of the copper target material in sequence.

In the embodiment, the side edge of the copper target is semi-automatically polished by the handheld polishing equipment, so that compared with the traditional manual abrasive paper polishing, the manual polishing equipment saves manpower and material resources, improves the processing efficiency and reduces the cost investment of large-scale polishing equipment; in addition, the sectional type polishing procedure improves the polishing precision, is favorable for timely adjusting the polishing conditions according to actual conditions, and achieves the purpose of thoroughly removing the oxide on the side of the target, thereby avoiding the adverse effect of the oxide on the coating quality in the sputtering process.

Example 4

The embodiment provides a polishing method for a side edge of a copper target, which comprises the following steps:

(1) welding the square copper target and the stainless steel back plate;

(2) semi-automatic polishing treatment is carried out on the side edge of the copper target by adopting a handheld polishing device; the handheld polishing equipment is a pistol drill with a polishing wheel arranged at the head, and scouring pads are arranged on the surface of the polishing wheel; the semi-automatic polishing treatment comprises three polishing procedures, namely a first polishing procedure, a second polishing procedure and a third polishing procedure in sequence; the specification of the scouring pad adopted in the first polishing procedure is 150#, the rotating speed of the polishing wheel is 600r/min, and the feeding speed is 6 mm/min; the specification of the scouring pad adopted in the second polishing procedure is 240#, the rotating speed of the polishing wheel is 400r/min, and the feeding speed is 4 mm/min; the specification of the scouring pad adopted in the third polishing procedure is 320#, the rotating speed of the polishing wheel is 200r/min, and the feeding speed is 2 mm/min;

(3) and cleaning and drying the side edge of the copper target material in sequence.

In the embodiment, the side edge of the copper target is semi-automatically polished by the handheld polishing equipment, so that compared with the traditional manual abrasive paper polishing, the manual polishing equipment saves manpower and material resources, improves the processing efficiency and reduces the cost investment of large-scale polishing equipment; in addition, the sectional type polishing procedure improves the polishing precision, is favorable for timely adjusting the polishing conditions according to actual conditions, and achieves the purpose of thoroughly removing the oxide on the side of the target, thereby avoiding the adverse effect of the oxide on the coating quality in the sputtering process.

Example 5

The embodiment provides a polishing method for a side edge of a copper target, which comprises the following steps:

(1) welding the round copper target material and the stainless steel back plate;

(2) semi-automatic polishing treatment is carried out on the side edge of the copper target by adopting a handheld polishing device; the handheld polishing equipment is a pistol drill with a polishing wheel arranged at the head, and scouring pads are arranged on the surface of the polishing wheel; the semi-automatic polishing treatment comprises three polishing procedures, namely a first polishing procedure, a second polishing procedure and a third polishing procedure in sequence; the specification of the scouring pad adopted in the first polishing procedure is 240#, the rotating speed of the polishing wheel is 800r/min, and the feeding speed is 8 mm/min; the specification of the scouring pad adopted in the second polishing procedure is 320#, the rotating speed of the polishing wheel is 600r/min, and the feeding speed is 6 mm/min; the specification of the scouring pad adopted in the third polishing procedure is 500#, the rotating speed of the polishing wheel is 400r/min, and the feeding speed is 4 mm/min;

(3) and cleaning and drying the side edge of the copper target material in sequence.

In the embodiment, the side edge of the copper target is semi-automatically polished by the handheld polishing equipment, so that compared with the traditional manual abrasive paper polishing, the manual polishing equipment saves manpower and material resources, improves the processing efficiency and reduces the cost investment of large-scale polishing equipment; in addition, the sectional type polishing procedure improves the polishing precision, is favorable for timely adjusting the polishing conditions according to actual conditions, and achieves the purpose of thoroughly removing the oxide on the side of the target, thereby avoiding the adverse effect of the oxide on the coating quality in the sputtering process.

Comparative example 1

The comparative example provides a method for polishing the side edge of a copper target, wherein the conditions are the same as those in example 1 except that the feeding speed of each polishing step is adjusted to 5mm/min, and thus the details are not repeated herein.

In the comparative example, because the scouring pad specification and the polishing wheel rotating speed that each polishing process adopted are all different, in order to control the feed speed and keep unanimous, need strictly controlling polishing dynamics and time, because the error of manual operation is difficult to avoid, must lead to polishing precision to reduce, and difficult thorough oxide of getting rid of, can cause the excessive loss of copper target even, reduced the utilization ratio of raw materials.

Comparative example 2

The present comparative example provides a method of polishing a side of a copper target, the method comprising the steps of:

(1) welding the square copper target and the stainless steel back plate;

(2) semi-automatic polishing treatment is carried out on the side edge of the copper target by adopting a handheld polishing device; the handheld polishing equipment is a pistol drill with a polishing wheel arranged at the head, and scouring pads are arranged on the surface of the polishing wheel; the specification of the scouring pad adopted by the semi-automatic polishing is 280#, the rotating speed of the polishing wheel is 500r/min, and the feeding speed is 5 mm/min;

(3) and cleaning and drying the side edge of the copper target material in sequence.

Compared with the embodiment 1, the single-stage polishing procedure is adopted in the comparative example, the specification of the scouring pad is single, the rotating speed and the feeding speed of the polishing wheel are always kept unchanged, and the polishing condition is not adjusted timely according to actual conditions, so that the polishing precision is reduced, and the oxide on the side edge of the target material is difficult to completely remove.

Therefore, the semi-automatic polishing treatment is carried out on the side edge of the copper target by adopting the handheld polishing equipment, compared with the traditional manual sand paper polishing, the manual sand paper polishing method saves manpower and material resources, improves the processing efficiency, and reduces the cost investment of using large-scale polishing equipment; in addition, the sectional type polishing procedure improves the polishing precision, is favorable for timely adjusting the polishing conditions according to actual conditions, and achieves the purpose of thoroughly removing the oxide on the side of the target, thereby avoiding the adverse effect of the oxide on the coating quality in the sputtering process.

The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.