1. A method of predicting pattern bridging, comprising:

determining a test layout corresponding to the prefabricated layout, wherein the test layout is provided with a plurality of main patterns with strip-shaped structures;

simulating the test layout by utilizing an OPC model to obtain a first simulation layout;

checking whether bridging occurs between two adjacent simulation main graphs in the first simulation layout;

if yes, determining that a main pattern with bridging exists in the test layout;

if not, increasing or reducing the width of the main graph by a fixed value, inputting a new target light intensity threshold corresponding to the increased or reduced new width into an OPC model to form a new OPC model, and performing re-simulation on the test layout by using the new OPC model to obtain a second simulation layout;

checking whether bridging occurs between two adjacent simulation main patterns in the second simulation layout;

if yes, predicting a main graph with bridging risk in the test layout; and if not, predicting the main graph without bridging risk in the test layout.

2. The method of predicting pattern bridging as recited in claim 1, further comprising, after the step of determining that there is a master pattern in the test layout at which bridging occurs or after the step of predicting that there is a risk of occurrence of bridging in the test layout:

screening out all main graphs which are bridged or have bridging risks from the test layout;

and for each main pattern, the width of the main pattern is adaptively adjusted, so that the end part of the main pattern is retracted by a preset size.

3. The method of predicting pattern bridging as claimed in claim 2, wherein the step of adaptively adjusting the width of the main pattern for each main pattern to retract the end of the main pattern by a predetermined size comprises:

determining photoetching process windows of all simulation main graphs which are not bridged in the simulation layout, and finding out the simulation main graphs of which the photoetching process windows are larger than a threshold value from all the simulation main graphs;

determining a first mask rule value of a simulated main pattern of which the photoetching process window is larger than the threshold, wherein the first mask rule value is the line-end distance between the simulated main pattern of which the photoetching process window is larger than the threshold and another adjacent simulated main pattern;

and reducing the width of the screened main pattern with bridging occurrence or risk to increase the second mask rule value of the screened main pattern with bridging occurrence or risk to occur, and enabling the increased second mask rule value to be larger than or equal to the first mask rule value.

4. The method of predicting pattern bridging as set forth in claim 1, wherein the range of fixed values by which the width of the main pattern increases or decreases is: -5% to + 5%.

5. An apparatus for predicting graphics bridging, comprising:

the test layout determining module is used for determining a test layout corresponding to the prefabricated layout, and the test layout is provided with a plurality of main patterns with strip-shaped structures;

the first simulation layout forming module is used for simulating the test layout by utilizing an OPC model to obtain a first simulation layout;

a first bridging checking module for checking whether bridging occurs between two adjacent simulation main patterns in the first simulation layout;

a second simulation layout determining module, configured to determine that a main pattern with a bridging occurrence exists in the test layout if a bridging occurrence between two adjacent simulation main patterns in the first simulation layout is detected, otherwise, determine that the width of the main pattern is increased or decreased by a fixed value, input a new target light intensity threshold corresponding to the increased or decreased new width into an OPC model to form a new OPC model, and perform re-simulation on the test layout by using the new OPC model to obtain a second simulation layout;

a second bridging checking module for checking whether bridging occurs between two adjacent simulation main patterns in the second simulation layout;

a bridging risk prediction module, configured to predict a main pattern with a bridging risk in the test layout if it is detected that bridging occurs between two adjacent simulation main patterns in the second simulation layout; otherwise, predicting the main graph without bridging risk in the test layout.

6. The apparatus for predicting graphic bridging of claim 5, further comprising:

the screening module is used for screening all main graphs which are bridged or have bridging risks from the test layout;

and the adjusting module is used for adaptively adjusting the width of the main graph aiming at each main graph so as to enable the end part of the main graph to retract to a preset size.

7. The apparatus to predict graphics bridging of claim 6, wherein the adjustment module comprises:

the first determining unit is used for determining photoetching process windows of all simulation main graphs which are not bridged in the simulation layout and finding out the simulation main graphs of which the photoetching process windows are larger than a threshold value from all the simulation main graphs;

a second determining unit, configured to determine a first mask rule value of a simulated main pattern of which the lithography process window is greater than the threshold, where the first mask rule value is a line-end distance between the simulated main pattern of which the lithography process window is greater than the threshold and another adjacent simulated main pattern;

and the adjusting unit is used for reducing the width of the screened main pattern with bridging occurrence or risk, so as to increase the second mask rule value of the screened main pattern with bridging occurrence or risk, and enable the increased second mask rule value to be larger than or equal to the first mask rule value.

8. An electronic device is characterized by comprising a processor, a communication interface, a memory and a communication bus, wherein the processor and the communication interface are used for realizing mutual communication by the memory through the communication bus;

a memory for storing a computer program;

a processor for implementing the method of predicting graphics bridging of any of claims 1-4 when executing a program stored in a memory.

Background

At present, under the condition of the existing lithography process, the conventional method for manufacturing a photomask is to obtain a customer layout file DB, perform layout/main/frame (frame layout) operation, perform design rule check DRC/AG check, then perform optical proximity correction OPC, then output the corrected design layout file to a photomask company, and then the photomask company performs mask rule check MRC and the last JDV check before tape-out, and if there is no problem in the above checks, the photomask company manufactures the photomask.

However, in practical applications, because a plurality of line end point patterns (main patterns) with adjacent strip-shaped structures exist in a layout, if the line end distance between the adjacent line end point patterns is too small, the problem of pattern bridging occurs on a wafer along with fluctuation of a photolithography process in an actual photolithography process, thereby causing low product yield.

Therefore, it is a technical problem to be solved by those skilled in the art to check whether there is a main pattern in a design layout that may be bridged due to fluctuation of the photolithography process before the flow.

Disclosure of Invention

The invention aims to provide a method, a device and electronic equipment for predicting graphic bridging, which are used for checking whether a main graphic in a design layout possibly generates bridging due to fluctuation of a photoetching process before the design layout is subjected to tape-out so as to improve the yield of products.

In a first aspect, to solve the above technical problem, the present invention provides a method for predicting pattern bridging, including:

and determining a test layout corresponding to the prefabricated layout, wherein the test layout is provided with a plurality of main patterns with strip structures.

And simulating the test layout by utilizing an OPC model to obtain a first simulation layout.

Checking whether bridging occurs between two adjacent simulation main patterns in the first simulation layout.

And if so, determining that the main graph with bridging exists in the test layout.

If not, increasing or decreasing the width of the main graph by a fixed value, inputting a new target light intensity threshold corresponding to the increased or decreased new width into an OPC model to form a new OPC model, and performing re-simulation on the test layout by using the new OPC model to obtain a second simulation layout.

Checking whether bridging occurs between two adjacent simulation main patterns in the second simulation layout.

If yes, predicting a main graph with bridging risk in the test layout; and if not, predicting the main graph without bridging risk in the test layout.

Further, after the step of detecting a bridge connection between two adjacent simulation main patterns in the first simulation layout, or after the step of determining that there is a main pattern in the test layout, which is at risk of bridging connection due to actual lithography process fluctuation, the detection method further includes:

and screening all main graphs with bridging or bridging risks from the test layout.

And for each main pattern, the width of the main pattern is adaptively adjusted, so that the end part of the main pattern is retracted by a preset size.

Further, the step of adaptively adjusting the width of the main pattern for each main pattern to retract the end of the main pattern by a preset size includes:

and determining photoetching process windows of all the simulation main graphs which are not bridged in the simulation layout, and finding out the simulation main graphs with the photoetching process windows larger than a threshold value from all the simulation main graphs.

And determining a first mask rule value of a simulated main pattern of which the photoetching process window is larger than the threshold, wherein the first mask rule value is the line-end distance between the simulated main pattern of which the photoetching process window is larger than the threshold and another adjacent simulated main pattern.

And reducing the width of the screened main pattern with bridging occurrence or risk to increase the second mask rule value of the screened main pattern with bridging occurrence or risk to occur, and enabling the increased second mask rule value to be larger than or equal to the first mask rule value.

Further, the range of the fixed value in which the width of the main pattern increases or decreases may be: -5% to + 5%.

In a second aspect, based on the method for predicting graphics bridging, the present invention further provides an apparatus for predicting graphics bridging, which may specifically include:

and the test layout determining module is used for determining a test layout corresponding to the prefabricated layout, and the test layout is provided with a plurality of main patterns with strip-shaped structures.

And the first simulation layout forming module is used for simulating the test layout by utilizing an OPC model so as to obtain a first simulation layout.

A first bridging checking module for checking whether bridging occurs between two adjacent simulation main patterns in the first simulation layout.

And the second simulation layout determining module is used for determining that the main graph with the bridging exists in the test layout if the bridging occurs between two adjacent simulation main graphs in the first simulation layout, otherwise, determining that the width of the main graph is increased or decreased by a fixed value, inputting a new target light intensity threshold value corresponding to the increased or decreased new width into an OPC model to form a new OPC model, and performing secondary simulation on the test layout by using the new OPC model to obtain the second simulation layout.

A second bridging checking module for checking whether bridging occurs between two adjacent simulation main patterns in the second simulation layout.

A bridging risk prediction module, configured to predict a main pattern with a bridging risk in the test layout if it is detected that bridging occurs between two adjacent simulation main patterns in the second simulation layout; otherwise, predicting the main graph without bridging risk in the test layout.

Further, the apparatus for predicting graphic bridging provided by the present invention may further include:

and the screening module is used for screening all main graphs which are bridged or have bridging risks from the test layout.

And the adjusting module is used for adaptively adjusting the width of the main graph aiming at each main graph so as to enable the end part of the main graph to retract to a preset size.

Further, the adjusting module may include:

the first determining unit is used for determining photoetching process windows of all simulation main graphs which are not bridged in the simulation layout and finding out the simulation main graphs of which the photoetching process windows are larger than a threshold value from all the simulation main graphs;

a second determining unit, configured to determine a first mask rule value of a simulated main pattern of which the lithography process window is greater than the threshold, where the first mask rule value is a line-end distance between the simulated main pattern of which the lithography process window is greater than the threshold and another adjacent simulated main pattern;

and the adjusting unit is used for reducing the width of the screened main pattern with bridging occurrence or risk, so as to increase the second mask rule value of the screened main pattern with bridging occurrence or risk, and enable the increased second mask rule value to be larger than or equal to the first mask rule value.

In a third aspect, based on the method for predicting graphics bridging as described above, the present invention further provides an electronic device, which includes a processor, a communication interface, a memory, and a communication bus, where the processor, the communication interface, and the memory complete communication with each other through the communication bus.

A memory for storing a computer program.

A processor for implementing the steps of the method for predicting graphics bridging as described above when executing a program stored in the memory.

Compared with the prior art, the technical scheme provided by the invention has at least one of the following beneficial effects:

the invention provides a method for predicting graphic bridging without reestablishing an OPC model. Specifically, the influence of the fluctuation of the photoetching process on the bridging of the patterns exposed on the wafer in the actual photoetching process is simulated to influence the light intensity threshold of the established OPC model, so that before the layout is subjected to tape-out, the modified OPC model is used for carrying out simulation analysis on the test layout of the design layout for many times in a mode of modifying the light intensity threshold of the established OPC model, and therefore, before the design layout is subjected to tape-out, the main patterns which are possibly bridged due to the fluctuation of the photoetching process in the design layout are detected, the detected main patterns which are possibly bridged are corrected, and further the product yield is improved.

Drawings

FIG. 1 is a flowchart illustrating a method for predicting pattern bridging according to an embodiment of the present invention.

Fig. 2 is a schematic structural diagram of an apparatus for predicting pattern bridging according to an embodiment of the present invention.

Detailed Description

The following describes in more detail embodiments of the present invention with reference to the schematic drawings. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.

As described in the background art, at present, under the condition of the existing photolithography process, a conventional method for manufacturing a photomask is to obtain a customer layout file DB, perform layout/main/frame (frame layout) operation, perform DRC/AG check, perform OPC (optical proximity correction), output the corrected design layout file to a photomask company, and perform MRC and JDV check on the final step before tape out by the photomask company.

However, in practical applications, because a plurality of line end point patterns (main patterns) with adjacent strip-shaped structures exist in a layout, if the line end distance between the adjacent line end point patterns is too small, the problem of pattern bridging occurs on a wafer along with fluctuation of a photolithography process in an actual photolithography process, thereby causing low product yield.

Therefore, it is a technical problem to be solved by those skilled in the art to check whether there is a main pattern in a design layout that may be bridged due to fluctuation of the photolithography process before the flow.

Therefore, the invention provides a method, a device and electronic equipment for predicting graphic bridging, which are used for checking whether a main graphic in a design layout possibly generates bridging due to fluctuation of a photoetching process before the design layout is subjected to tape-out so as to improve the yield of products.

It should be noted that, in the embodiment of the present invention, the line width of the main pattern is a distance between two adjacent line edges of the main pattern, so as to identify a characteristic of the main pattern itself; and the line end distance between two adjacent main graphs is the distance between the two main graphs so as to identify the position relation between the two adjacent main graphs.

Referring to fig. 1, fig. 1 is a schematic flow chart of a method for predicting pattern bridging according to an embodiment of the present invention, the method including the following steps:

and S100, determining a test layout corresponding to the prefabricated layout, wherein the test layout is provided with a plurality of main patterns with strip structures.

In this embodiment, the customer layout file DB may be obtained first, and layout/main/frame operation may be performed to obtain a test layout corresponding to the prefabricated layout. The test layout can comprise a plurality of main graphs, and part or all of the main graphs can be line end point graphs with line end shortening or corner rounding and strip-shaped structures. In practical applications, the main patterns included in the test pattern are more and more, and therefore, the line-end spacing between two adjacent main patterns is smaller and smaller. In the process of exposing the pattern in the design layout to the wafer through the photomask formed by the photomask company after the design layout is checked for many times, the exposure of the photoresist coated on the wafer is changed due to the fluctuation of the actual operation of the photolithography process, and the pattern transferred from the patterned photoresist to the wafer is bridged. Therefore, according to the conventional photomask forming process, even before the photomask is formed, the inspector can not find whether the main pattern, which may be bridged due to the fluctuation of the actual photolithography process, exists in the test layout through another number of tests.

In order to solve the problem, the researchers of the invention find that the influence on the light intensity threshold of the established OPC model can be simulated by simulating the bridging influence of the fluctuation of the photoetching process on the graph exposed on the wafer in the actual photoetching process, so that before the layout is subjected to tape-out, the modified OPC model is used for carrying out simulation analysis on the test layout of the design layout for many times in a mode of modifying the light intensity threshold of the established OPC model, so that the main graph which is possibly bridged due to the fluctuation of the photoetching process in the design layout can be detected before the design layout is subjected to tape-out, the detected main graph which is possibly bridged, and the product yield can be improved.

And S200, simulating the test layout by utilizing an OPC model to obtain a first simulation layout.

In this embodiment, after the test layout is determined in step S100, OPC correction may be performed on each main pattern in the test layout, so that the edge placement error of the main pattern after correction reaches a preset target value. And then, simulating the corrected test layout by using the initial OPC model to obtain a first simulation layout containing simulation graphs corresponding to all main graphs in the test layout.

Step S300, checking whether bridging occurs between two adjacent simulation main patterns in the first simulation layout.

In this embodiment, after the first simulated layout is determined in step S200, the first simulated layout may be scanned by a critical dimension scanning electron microscope to obtain a scan pattern, so that whether bridging occurs between two adjacent simulated main patterns in the first simulated layout can be determined by observing the scan pattern. Similarly, it can also be determined whether bridging occurs between two adjacent simulation main patterns in the second simulation layout as described in step S600 as above.

And S400, if yes, determining that the main pattern with bridging exists in the test layout.

And S500, if not, increasing or decreasing the width of the main graph by a fixed value, inputting a new target light intensity threshold corresponding to the increased or decreased new width into an OPC model to form a new OPC model, and performing re-simulation on the test layout by using the new OPC model to obtain a second simulation layout.

Wherein the target light intensity threshold increases with an increase in the width of the main pattern.

In this embodiment, if the main pattern of the sending bridge is detected to exist in the first simulation layout, the width CD of each main pattern of the sending bridge is directly reduced, so as to reduce the line end of the main pattern of the sending bridge by a certain size, thereby increasing the line end distance between two adjacent main patterns of the sending bridge, that is, increasing the mask rule value MRC between two adjacent main patterns of the sending bridge, and further avoiding the problem of the occurrence of the bridge due to too small line end distance between the two adjacent main patterns in the actual exposure process (photolithography process). If the main pattern of the sending bridge is not detected in the first simulation layout, the main pattern which is possibly in bridging risk along with the fluctuation of the actual photoetching process is found out by adopting the mode of modifying the light intensity threshold value of the established OPC model and carrying out simulation analysis on the test layout of the design layout by utilizing the modified OPC model, and the OPC is carried out on the main pattern so as to increase the mask rule value MRC between two adjacent main patterns and further finally realize the purpose of improving the product yield.

Specifically, the width CD of the main pattern in the test layout may be increased or decreased by a fixed value, then, when the width CD of the main pattern is increased or decreased by the fixed value, a light intensity threshold corresponding to the established initial OPC model is obtained, and the light intensity threshold is used as a target light intensity threshold, then, a light intensity threshold parameter in the configuration file of the initial OPC model is adjusted to the target light intensity threshold, so as to obtain a modified OPC model (or referred to as a new OPC model); and then, performing secondary simulation on the test layout by using the new OPC model to obtain a second simulation layout.

As an example, when the line width adjustment is performed on two adjacent main patterns in which a bridge connection occurs or may occur, the line width of only one of the main patterns may be adjusted to increase the line-end pitch between the end of the modified main pattern and the end of the main pattern adjacent thereto.

As another example, when the line width of two adjacent main patterns which are or may be bridged is adjusted, the line widths of the two adjacent main patterns may be adjusted to increase the line-end distance between the two ends.

It can be understood that the target value of the width increase or decrease of the main pattern can be adjusted according to actual requirements, so as to accurately determine whether there is a main pattern in the test layout, which may cause bridging risk along with actual lithography process fluctuation.

Step S600, checking whether bridging occurs between two adjacent simulation main patterns in the second simulation layout.

And S700, if yes, predicting the main graph with bridging risk in the test layout.

And S800, if not, predicting the main pattern without bridging risk in the test layout.

In this embodiment, if it is detected that a bridge exists between two adjacent simulation main patterns in the second simulation layout, it indicates that a main pattern with a risk of bridging occurring along with fluctuation of an actual photolithography process exists in the test layout. Then, OPC correction needs to be performed on the main pattern in the test layout, which may be at risk of bridging, so as to avoid the problem of bridging occurring between the two adjacent main patterns due to too small distance between the two terminals in the actual exposure process (lithography process). Specifically, the embodiment of the present invention provides a specific operation flow for performing OPC correction on a main pattern in a test layout after a step of detecting that a bridging occurs between two adjacent analog main patterns in the first analog layout, or after a step of determining that a main pattern in the test layout has a risk of bridging occurring along with fluctuation of an actual photolithography process, which is specifically as follows:

screening out all main graphs which are bridged or have bridging risks from the test layout; and for each main pattern, the width of the main pattern is adaptively adjusted, so that the end part of the main pattern is retracted by a preset size.

In this embodiment, the lithography process windows of all the simulation main patterns that are not bridged in the second simulation layout may be determined first, and then the first mask rule value of one simulation main pattern whose lithography process window is greater than the threshold is determined, where the first mask rule value is a line-end distance between one simulation main pattern whose lithography process window is greater than the threshold and another adjacent simulation main pattern; and then, reducing the width CD of the main pattern which is screened out to generate bridging or has the risk of generating bridging so as to increase the second mask rule value of the main pattern which is screened out to generate bridging or has the risk of generating bridging, and enabling the increased second mask rule value to be larger than or equal to the first mask rule value.

It can be understood that, in the embodiment of the present invention, if it is detected in step S600 that bridging does not occur between two adjacent analog main patterns in the second analog layout, it may be that there is a problem in the fixed value in step S500, and therefore, after it is detected that bridging does not occur between two adjacent analog main patterns in the second analog layout, the inspection method provided in the present invention may further select a fixed value again in step S400, and sequentially execute steps S500 to S800 until the selectable range of the fixed value is traversed.

Further, in this embodiment, a specific way to screen out all main patterns that may have bridging risks from the test layout is provided, specifically as follows:

and determining the photoetching process windows of all the simulation main graphs which are not bridged in the second simulation layout, and taking all the simulation main graphs of which the photoetching process windows are smaller than the threshold value as the main graphs which are possibly bridged.

Further, the target light intensity threshold increases as the width of the main pattern increases.

Further, the range of the target value of the width of the main pattern may be: the range of the fixed value of the increase or decrease of the width of the main pattern is as follows: -5% to + 5%.

The invention provides a method for checking whether a main pattern which is possibly bridged along with the fluctuation of an actual photoetching process exists in a design layout without reestablishing an OPC model before the layout tape-out. If the bridging risk is detected, the design layout is revised again and tape out is carried out, and if no problem exists, tape out is carried out, so that the problems that bridging is easy to occur on a wafer due to unstable actual photoetching process, the product yield is low, and customers complain are solved.

Based on the method for checking the condition of graphics bridge as described above, this embodiment further provides an apparatus for predicting graphics bridge, and specifically, referring to fig. 2, fig. 2 is a schematic structural diagram of the apparatus for predicting graphics bridge in an embodiment of the present invention, where the apparatus includes:

the test layout determining module 210 is configured to determine a test layout corresponding to the prefabricated layout, where the test layout has a plurality of main patterns with a strip-shaped structure.

The first simulated layout forming module 220 is configured to simulate the test layout by using an OPC model to obtain a first simulated layout.

A first bridging checking module 230, configured to check whether bridging occurs between two adjacent simulation main patterns in the first simulation layout.

A second simulation layout determining module 240, configured to determine that a main pattern with a bridging occurs in the test layout if it is detected that a bridging occurs between two adjacent simulation main patterns in the first simulation layout, otherwise, determine that the width of the main pattern is increased or decreased by a fixed value, input a new target light intensity threshold corresponding to the increased or decreased new width into an OPC model to form a new OPC model, and perform re-simulation on the test layout by using the new OPC model to obtain a second simulation layout.

A second bridge checking module 250 for checking whether a bridge occurs between two adjacent simulation main patterns in the second simulation layout.

A bridging risk prediction module 260, configured to predict a main pattern with a bridging risk in the test layout if it is detected that bridging occurs between two adjacent simulation main patterns in the second simulation layout; otherwise, predicting the main graph without bridging risk in the test layout.

Further, the apparatus for inspecting a pattern bridging condition according to the present invention may further include:

and the screening module is used for screening all main graphs which are bridged or have bridging risks from the test layout.

And the adjusting module is used for adaptively adjusting the width of the main graph aiming at each main graph so as to enable the end part of the main graph to retract to a preset size.

Wherein the adjusting module may include:

the first determining unit is used for determining photoetching process windows of all the simulation main graphs which are not bridged in the simulation layout, and finding out the simulation main graphs with the photoetching process windows larger than a threshold value from all the simulation main graphs.

And the second determining unit is used for determining a first mask rule value of a simulated main pattern of which the photoetching process window is larger than the threshold, wherein the first mask rule value is the line-end distance between the simulated main pattern of which the photoetching process window is larger than the threshold and another adjacent simulated main pattern.

And the adjusting unit is used for reducing the width of the screened main pattern with bridging occurrence or risk, so as to increase the second mask rule value of the screened main pattern with bridging occurrence or risk, and enable the increased second mask rule value to be larger than or equal to the first mask rule value.

In summary, in the embodiment of the present invention, the influence of the fluctuation of the lithography process on the bridging of the pattern exposed on the wafer in the actual lithography process is simulated to influence the light intensity threshold of the established OPC model, so that before the design layout is subjected to tape-out, the modified OPC model is used to perform multiple simulation analyses on the test layout of the design layout in a manner of modifying the light intensity threshold of the established OPC model, so that the main pattern, which may be bridged due to the fluctuation of the lithography process in the design layout, is detected before the design layout is subjected to tape-out, and the detected main pattern, which may be bridged, is corrected, thereby improving the yield of the product.

The embodiment of the invention also provides electronic equipment which comprises a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory complete mutual communication through the communication bus,

a memory for storing a computer program;

the processor is used for implementing the method for predicting the graphic bridging when executing the program stored on the memory.

In addition, other implementation manners of the method for checking the graphics bridging condition, which are implemented by the processor executing the program stored in the memory, are the same as the implementation manners mentioned in the foregoing method embodiment section, and are not described herein again.

The communication bus mentioned above for the control terminal may be a Peripheral Component Interconnect (PCI) bus, an Extended Industry Standard Architecture (EISA) bus, or the like. The communication bus may be divided into an address bus, a data bus, a control bus, etc. For ease of illustration, only one thick line is shown, but this does not mean that there is only one bus or one type of bus.

The communication interface is used for communication between the electronic equipment and other equipment.

The Memory may include a Random Access Memory (RAM) or a Non-Volatile Memory (NVM), such as at least one disk Memory. Optionally, the memory may also be at least one memory device located remotely from the processor.

The Processor may be a general-purpose Processor, including a Central Processing Unit (CPU), a Network Processor (NP), and the like; but also Digital Signal Processors (DSPs), Application Specific Integrated Circuits (ASICs), Field Programmable Gate Arrays (FPGAs) or other Programmable logic devices, discrete Gate or transistor logic devices, discrete hardware components.

In yet another embodiment of the present invention, a computer-readable storage medium is further provided, which stores instructions that, when executed on a computer, cause the computer to execute the method for checking a graphic bridging condition as described in any one of the above embodiments.

In the above embodiments, the implementation may be wholly or partially realized by software, hardware, firmware, or any combination thereof. When implemented in software, may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When loaded and executed on a computer, cause the processes or functions described in accordance with the embodiments of the invention to occur, in whole or in part. The computer may be a general purpose computer, a special purpose computer, a network of computers, or other programmable device. The computer instructions may be stored in a computer readable storage medium or transmitted from one computer readable storage medium to another, for example, from one website site, computer, server, or data center to another website site, computer, server, or data center via wired (e.g., coaxial cable, fiber optic, Digital Subscriber Line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.). The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device, such as a server, a data center, etc., that incorporates one or more of the available media. The usable medium may be a magnetic medium (e.g., floppy Disk, hard Disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium (e.g., Solid State Disk (SSD)), among others.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, as for the apparatus, the electronic device, and the computer-readable storage medium embodiments, since they are substantially similar to the method embodiments, the description is relatively simple, and in relation to the description, reference may be made to some portions of the description of the method embodiments.

The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.