1. An auxiliary measurement circuit, comprising:

an input end of an electrical signal to be measured;

a first electrical signal channel connected to the measurement unit; and

the over-range measurement module is connected between the input end of the electric signal to be measured and the first electric signal channel, and comprises:

a calibration coefficient determination unit including a first switch and a second electrical signal channel to which a calibration electrical signal is input; and

an over-range unit connected to the first electrical signal channel,

wherein the first switch is configured to selectively connect the over range unit to an input of the electrical signal under test or the second electrical signal channel to reduce the electrical signal under test or the calibration electrical signal through the over range unit.

2. The auxiliary measurement circuit of claim 1,

the over-range unit comprises a first resistor and a second resistor, the first resistor is arranged between the first switch and the first electric signal channel, and the second resistor is arranged between the first electric signal channel and the ground level.

3. The auxiliary measurement circuit of claim 1,

the over-range unit comprises a first resistor and a second resistor, the first resistor is arranged between the first switch and the ground level, and the second resistor is arranged between the first switch and the first electric signal channel.

4. The auxiliary measurement circuit according to any of claims 1 to 3, wherein the auxiliary measurement circuit is configured to reduce the electrical signal under test to within the range of the measurement cell when the over-range cell is connected to the input of the electrical signal under test via the first switch.

5. An auxiliary measurement circuit according to any of claims 1 to 3, wherein the auxiliary measurement circuit is configured to reduce the calibration electrical signal to within the measurement range of the measurement cell when the over-range cell is connected to the second electrical signal channel by the first switch.

6. The auxiliary measurement circuit of claim 5, further comprising a second switch disposed between the electrical signal under test input and the first electrical signal path, the second switch configured to selectively enable direct electrical connection between the electrical signal under test input and the first electrical signal path.

7. The auxiliary measurement circuit of claim 6, further comprising a protection unit for controlling the second switch to open when the first switch connects the over range unit to the second electrical signal path.

8. An auxiliary measurement circuit according to claim 7, wherein the protection unit comprises an OR-gate, the OR-gate being controlled by a first control signal and a second control signal, the first control signal further being used to control the first switch,

the first control signal is at a high level, the first switch connects the over-range unit to the second electrical signal channel, and the or gate circuit outputs a high level for controlling the second switch to be switched off.

9. The auxiliary measurement circuit of claim 7, wherein the protection unit comprises an AND gate circuit controlled by a first control signal and a second control signal, the first control signal further for controlling the first switch,

the first control signal is at a low level, the first switch connects the over-range unit to the second electrical signal channel, and the and gate circuit outputs a low level for controlling the second switch to be switched off.

10. An auxiliary measuring circuit according to claim 2 or 3, characterized in that the resistance values of the first and second resistors are set such that the reduced electrical signal to be measured is within the range of the measuring unit.

11. The auxiliary measurement circuit of claim 2, wherein the first resistance and the second resistance range between 900 ohms to 1500 ohms.

12. The auxiliary measurement circuit of claim 3, wherein the first resistance and the second resistance range between 200 ohms and 300 ohms.

13. A method for measuring an electrical signal of a semiconductor device based on the auxiliary measuring circuit of claim 1, the method comprising:

connecting the over range unit to the second electrical signal channel through the first switch;

inputting a calibration electrical signal of known value into a second electrical signal channel to determine a measurement of the calibration electrical signal by the measurement unit;

determining a measurement accuracy correction value of the measured value of the electric signal to be measured according to the ratio of the measured value of the calibration electric signal to the known value;

connecting the over-range unit to the input end of the electrical signal to be tested through the first switch;

inputting the electrical signal to be measured into the electrical signal input end to be measured so as to determine the measurement value of the electrical signal to be measured through the measurement unit; and

and determining the output value of the electric signal to be measured according to the measured value of the electric signal to be measured and the measurement precision correction value.

14. The measurement method of claim 13, the over range cell comprising a first resistance and a second resistance,

disposing the first resistance between the first switch and the first electrical signal path; and

the second resistance is disposed between the first electrical signal path and ground level.

15. The measurement method of claim 13, the over range cell comprising a first resistance and a second resistance,

setting the first resistance between the first switch and a ground level; and

the second resistance is disposed between the first switch and the first electrical signal path.

16. The measurement method of claim 13, the auxiliary measurement circuit further comprising a second switch disposed between the first switch and the first electrical signal path, wherein prior to connecting the over-range cell to the second electrical signal path through the first switch, the method further comprises:

determining the numerical range of the electric signal to be detected; and

and after the numerical range is determined not to exceed the range of the measuring unit, closing the second switch to realize that the measuring unit directly measures the electric signal to be measured.

17. A measurement circuit, characterized in that the measurement circuit comprises:

an auxiliary measurement circuit as claimed in any one of claims 1 to 12;

a measuring unit for determining a measured value of a signal to be measured; and

and the processing unit is used for determining the measurement precision correction value of the measured value of the electric signal to be measured and determining the output value of the electric signal to be measured according to the measured value of the electric signal to be measured and the measurement precision correction value.

18. The measurement circuit of claim 17,

the measuring unit is also used for determining the measured value of the calibration electric signal with a known value; and

and the processing unit is used for determining the measurement precision correction value of the measurement value of the electric signal to be measured according to the ratio of the measurement value of the calibration electric signal to the known value.

19. A measuring device, characterized in that the measuring device comprises:

a processor; and

memory, wherein the memory has stored therein computer readable code, which when executed by the processor, performs the semiconductor device electrical signal measurement method of any one of claims 13 to 16.

20. A computer-readable storage medium having stored thereon instructions that, when executed by a processor, cause the processor to execute the semiconductor device electric signal measurement method according to any one of claims 13 to 16.

Background

In conventional semiconductor electrical performance Measurement, when a voltage value or a current value on a pin of a semiconductor device needs to be measured, a Measurement Unit such as a Precision Measurement Unit (PMU) on an ATE (Automatic Test Equipment) machine is usually selected for Measurement. Specifically, the precision measurement unit may drive a current into the semiconductor device to measure a voltage value of the semiconductor device, or the precision measurement unit may apply a voltage to the semiconductor device to measure a current value of the semiconductor device. Further, the driving function may be selected as a voltage or a current at the time of programming the precision measurement unit, and if the driving function is selected as a current, a mode of measuring an electric signal of the semiconductor device is automatically set to a voltage; on the contrary, if the driving function is selected as the voltage, the mode of measuring the electric signal of the semiconductor device is automatically set to the current.

Therefore, the measurement accuracy and measurement range of the measurement value of the electrical signal of the conventional semiconductor device completely depend on the precise measurement unit of the ATE machine. If the output electrical signal value of the semiconductor device exceeds the range of the measuring range of the precision measuring unit of the ATE machine, a new type of ATE machine needs to be replaced to meet the testing requirement in general, but the new type of ATE machine is often irrevocable.

In summary, how to measure the electrical performance of the semiconductor device under test without replacing the new ATE machine is one of the problems to be solved in the field of electronic testing.

Disclosure of Invention

The present application provides an auxiliary measuring circuit and a semiconductor device electrical signal measuring method that can at least partially solve the above-mentioned problems in the prior art.

One aspect of the present application provides an auxiliary measurement circuit, which includes: an input end of an electrical signal to be measured; a first electrical signal channel connected to the measurement unit; and the over-range measurement module is connected between the input end of the electric signal to be measured and the first electric signal channel and comprises: a calibration coefficient determination unit including a first switch and a second electrical signal channel to which a calibration electrical signal is input; and an over-range unit connected to the first electrical signal channel, wherein the first switch is configured to selectively connect the over-range unit to an input of the electrical signal to be tested or the second electrical signal channel to reduce the electrical signal to be tested or the calibration electrical signal through the over-range unit.

According to an embodiment of the present application, the over range unit includes a first resistor and a second resistor, the first resistor is disposed between the first switch and the first electrical signal channel, and the second resistor is disposed between the first electrical signal channel and a ground level.

According to an embodiment of the present application, the over range unit includes a first resistor disposed between the first switch and a ground level and a second resistor disposed between the first switch and the first electrical signal path.

According to one embodiment of the application, the auxiliary measurement circuit is configured to reduce the calibration electrical signal to within the measurement range of the measurement cell when the over-range cell is connected to the second electrical signal channel by the first switch.

According to an embodiment of the present application, when the over-range unit is connected to the input end of the electrical signal to be measured through the first switch, the auxiliary measurement circuit is configured to reduce the electrical signal to be measured to be within the range of the measurement unit.

According to an embodiment of the present application, the auxiliary measuring circuit further includes a second switch disposed between the electrical signal input terminal to be measured and the first electrical signal channel, the second switch being configured to selectively enable direct electrical connection between the electrical signal input terminal to be measured and the first electrical signal channel.

According to an embodiment of the application, the auxiliary measuring circuit further comprises a protection unit for controlling the second switch to be turned off when the first switch connects the over-range unit to the second electrical signal channel.

According to an embodiment of the present application, the protection unit is an or gate circuit, the or gate circuit is controlled by a first control signal and a second control signal, the first control signal is further used for controlling the first switch, wherein the first control signal is a high level, the first switch connects the over-range unit to the second electrical signal channel, and the or gate circuit outputs a high level for controlling the second switch to be disconnected.

According to an embodiment of the application, the protection unit includes and gate circuit, and gate circuit receives first control signal and second control signal's control, first control signal still is used for controlling first switch, wherein, first control signal is the low level, first switch will the overrange unit is connected to the second signal of telecommunication passageway, and gate circuit output control the low level of second switch disconnection.

According to one embodiment of the application, the resistance values of the first resistor and the second resistor are set so that the reduced electric signal to be measured is within the range of the measuring unit.

According to an embodiment of the application, the first resistance and the second resistance have a value in a range between 900 ohms and 1500 ohms.

According to an embodiment of the application, the first resistance and the second resistance have a value in a range between 200 ohms and 300 ohms.

Another aspect of the present application provides a method for measuring an electrical signal of a semiconductor device based on the auxiliary measuring circuit according to one aspect of the present application, the method including: connecting the over range unit to the second electrical signal channel through the first switch; inputting a calibration electrical signal of known value into a second electrical signal channel to determine a measurement of the calibration electrical signal by the measurement unit; determining a measurement accuracy correction value of the measured value of the electric signal to be measured according to the ratio of the measured value of the calibration electric signal to the known value; connecting the over-range unit to the input end of the electrical signal to be tested through the first switch; inputting the electrical signal to be measured into the electrical signal input end to be measured so as to determine the measurement value of the electrical signal to be measured through the measurement unit; and determining the measured value of the electric signal to be measured according to the measured value of the electric signal to be measured and the measurement precision correction value.

According to one embodiment of the present application, the over range unit includes a first resistor and a second resistor, wherein the first resistor is disposed between the first switch and the first electrical signal path; and disposing the second resistance between the first electrical signal path and ground level.

According to one embodiment of the present application, the over range unit includes a first resistor and a second resistor, wherein the first resistor is disposed between the first switch and a ground level; and disposing the second resistance between the first switch and the first electrical signal path.

According to an embodiment of the application, the auxiliary measurement circuit further comprises a second switch disposed between the first switch and the first electrical signal path, wherein prior to connecting the over-range cell to the second electrical signal path through the first switch, the method further comprises: determining the numerical range of the electric signal to be detected; and after the numerical range is determined not to exceed the range of the measuring unit, closing the second switch to realize that the measuring unit directly measures the electric signal to be measured.

Yet another aspect of the present application provides a measurement circuit comprising: an auxiliary measurement circuit as provided in one aspect of the present application; a measuring unit for determining a measured value of the signal to be measured; and the processing unit is used for determining the measurement precision correction value of the measured value of the electric signal to be measured and determining the output value of the electric signal to be measured according to the measured value of the electric signal to be measured and the measurement precision correction value.

According to an embodiment of the application, the measurement unit is further configured to determine a measurement value of the calibration electrical signal of a known value; and the processing unit is used for determining the measurement precision correction value of the measurement value of the electric signal to be measured according to the ratio of the measurement value of the calibration electric signal to the known value.

Yet another aspect of the present application provides a measuring apparatus including: a processor; and a memory, wherein the memory has stored therein computer readable code, which when executed by the processor, performs a semiconductor device electrical signal measurement method based on the auxiliary measurement circuit according to another aspect of the present application as provided by another aspect of the present application.

Yet another aspect of the present application provides a computer-readable storage medium having stored thereon instructions, which, when executed by a processor, cause the processor to execute a method for measuring an electrical signal of a semiconductor device based on an auxiliary measurement circuit according to an aspect of the present application, as provided by another aspect of the present application.

According to the auxiliary measuring circuit and the semiconductor device electric signal measuring method provided by the embodiment of the application, the electric signal to be measured can be reduced through the over-range measuring module, so that the electric signal measured by the measuring unit of the machine table is ensured to be within the range of the measuring unit, and the measurement of the electric signal on the pin of the semiconductor device beyond the range of the measuring unit of the machine table originally can be realized only by adding the auxiliary measuring circuit provided by the application to a probe card or adapter plate hardware of the semiconductor device to be measured under the condition that a new machine table is not purchased or the configuration of the original machine table is not changed.

In addition, according to the auxiliary measuring circuit and the method for measuring an electric signal of a semiconductor device provided in at least one embodiment of the present application, a correction value of the measurement accuracy of the measured value of the electric signal to be measured can be determined by the calibration coefficient determining unit to reduce an error of the output value of the electric signal to be measured, which includes both an error of each device constituting the auxiliary measuring circuit and a systematic error of the measuring circuit involving the auxiliary measuring circuit.

In addition, according to the auxiliary measuring circuit and the method for measuring an electrical signal of a semiconductor device provided in one embodiment of the present application, the electrical signal to be measured can be directly measured by the measuring unit (using a direct measurement circuit) or measured by the auxiliary measuring circuit (using an auxiliary measuring circuit) according to the value range of the electrical signal to be measured. Further, an or gate structure is also provided in at least one embodiment of the present application to ensure that the direct quantity circuit and the auxiliary measurement circuit do not perform simultaneously.

Drawings

Other features, objects, and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, with reference to the accompanying drawings. Wherein:

FIG. 1 is a schematic diagram of an auxiliary measurement circuit according to an embodiment of the present application

FIG. 2 is a schematic diagram of an auxiliary measurement circuit according to a first embodiment of the present application;

FIG. 3 is a schematic diagram of an auxiliary measurement circuit according to a second embodiment of the present application;

fig. 4 is a flowchart of a method for measuring an electrical signal of a semiconductor device according to an embodiment of the present application.

FIG. 5 is a schematic view of a measurement device according to one embodiment of the present application;

FIG. 6 is a schematic diagram of an architecture of a computing device according to one embodiment of the present application; and

FIG. 7 is a schematic illustration of a storage medium according to an embodiment of the present application.

Detailed Description

Exemplary embodiments of the present application will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the application are shown. This application may, however, be embodied in different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

It will also be understood that when an element or layer is referred to as being "on," "connected to" or "coupled to" another element or layer, it can be directly on or connected to the other element or layer or intervening elements or layers may be present. When an element or layer is referred to as being "directly on," "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers present. To this end, the term "connected" may refer to physical, electrical, and/or fluid connections, with or without intervening elements.

Like reference numerals refer to like elements throughout the specification. In the drawings, the thickness of layers and regions are exaggerated for clarity.

Although the terms "first," "second," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms may be used to distinguish one element from another. Thus, a first resistance may be referred to as a second resistance and a first electrical signal path may be referred to as a second electrical signal path, discussed below, without departing from the teachings of one or more embodiments. Furthermore, the description of an element as a "first" element may not require or imply the presence of a second element or other elements. The terms "first," "second," and the like may also be used herein to distinguish between different classes or groups of elements. For the sake of simplicity, the terms "first", "second", etc. may denote "first class (or first group)", "second class (or second group)", etc. respectively.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, regions, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, regions, steps, operations, elements, components, and/or groups thereof.

Furthermore, relative terms, such as "lower" or "bottom" and "upper" or "top," may be used herein to describe one element's relationship to another element as illustrated in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. In an exemplary embodiment, when the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "lower" can encompass both an orientation of "lower" and "upper," depending on the particular orientation of the figure. Similarly, when the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "beneath" can encompass both an orientation of above and below.

FIG. 1 is a schematic diagram of a secondary measurement circuit 1000 according to one embodiment of the present application. Fig. 2 is a schematic structural diagram of an auxiliary measurement circuit 1000 according to a first embodiment of the present application. Fig. 3 is a schematic diagram of an auxiliary measurement circuit configuration 1000 according to a second embodiment of the present application.

As shown in fig. 1, fig. 2 and fig. 3, the auxiliary measuring circuit 1000 may include an input port Pad/Pin of an electrical signal to be measured, a first electrical signal channel ATE 1 and an over-range measuring module 100, wherein the over-range measuring module 100 is disposed between the input port Pad/Pin of the electrical signal to be measured and the first electrical signal channel ATE 1. In particular, the first electrical signal channel ATE channel1 may be connected to a measurement unit, such as a precision measurement unit PMU, and the over-range measurement module 100 may comprise a calibration coefficient determination unit 110 and an over-range unit 120, wherein the calibration coefficient determination unit 110 may comprise a first switch K1 and a second electrical signal channel ATE channel2 for inputting calibration electrical signals, and the over-range unit 120 may be connected to the first electrical signal channel ATE channel 1. Further, the first switch K1 is configured to selectively connect the over-range cell 120 to the input Pad/Pin of the electrical signal to be measured or the second electrical signal channel ATE 2 to reduce the electrical signal to be measured or calibrate the electrical signal through the over-range cell 120. However, the auxiliary measurement circuit 1000 may also include at least one of other modules or ports, fig. 1-3 provided herein simplify the structure of the auxiliary measurement circuit, and it will be understood by those skilled in the art that the specific structure of the auxiliary measurement circuit may be changed to achieve the various results and advantages described herein without departing from the claimed subject matter.

In conventional semiconductor electrical performance Measurement, when a voltage value or a current value on a pin of a semiconductor device needs to be measured, a Measurement Unit such as a Precision Measurement Unit (PMU) on an ATE (Automatic Test Equipment) machine is usually selected for Measurement. The ATE machine can automatically complete the processes of signal measurement, data processing, transmission and display under the scheduling of a test program, and is provided with a plurality of signal channels, wherein part of the signal channels are provided with precise measurement units which can be used for precisely measuring electrical performance parameters of semiconductor devices. Specifically, the precision measurement unit may drive a current into the semiconductor device to measure a voltage value of the semiconductor device, or the precision measurement unit may apply a voltage to the semiconductor device to measure a current value of the semiconductor device. Further, the driving function may be selected as a voltage or a current at the time of programming the precision measurement unit, and if the driving function is selected as a current, a mode of measuring an electric signal of the semiconductor device is automatically set to a voltage; on the contrary, if the driving function is selected as the voltage, the mode of measuring the electric signal of the semiconductor device is automatically set to the current.

Therefore, the measurement accuracy and measurement range of the electrical performance measurement of conventional semiconductor devices are completely dependent on the measurement unit, such as a precision measurement unit, of the ATE machine. If the value of the electrical signal to be tested of the semiconductor device exceeds the range of the measurement unit, a new type of ATE equipment is required to meet the test requirement, but this is often not compensated.

According to the utility model provides an auxiliary measuring circuit, the accessible overranging measurement module reduces the signal of telecommunication that awaits measuring, and the signal of telecommunication input such as precision measurement unit that awaits measuring after will reducing, in order to ensure that the signal of telecommunication that the measuring unit of ATE board measured is in the range of measuring unit's range, prevent that the signal of telecommunication that awaits measuring from exceeding the range of measuring unit and causing the measuring unit damage and measure inaccurate scheduling problem, in order to reach under the condition of not changing new machine platform or not changing original machine configuration, realize the measurement of the signal of telecommunication beyond the range of the measuring unit of ATE board originally on semiconductor device's the pin.

In addition, according to the auxiliary measuring circuit provided by the application, the measurement accuracy correction value of the measured value of the electric signal to be measured can be determined by the calibration coefficient determining unit so as to reduce the error of the output value of the electric signal to be measured, wherein the error comprises the self error of each device forming the auxiliary measuring circuit and the system error of the measuring circuit including the auxiliary measuring circuit.

Specifically, referring again to fig. 2, in the first embodiment of the present application, the over-range unit 120 may include a first resistor R1 and a second resistor R2, and the first resistor R1 may be disposed between the first switch K1 and the first electrical signal channel ATE 1, and the second resistor R2 may be disposed between the first electrical signal channel ATE 1 and the ground level. When the electrical signal to be tested of the semiconductor device is a voltage signal, the over-range unit 120 of the present embodiment may be selected, and the PMU connected to the first electrical signal channel ATE channel1 only needs to measure the divided voltage values at the two ends of the first resistor R1, and may obtain the output value of the voltage signal to be tested of the semiconductor device after automatically completing the data processing of the divided voltage values under the scheduling of the test program of the ATE machine.

Further, when the over-range unit 120 is configured as shown in fig. 2, the measurement range of the auxiliary measurement circuit 1000 is α times (α is a theoretical value) the measurement range of the precision measurement unit PMU connected to the first electrical signal channel ATE 1, where α is R1+ R2/R1, R1 is the resistance value of the first resistor, and R2 is the resistance value of the second resistor. In other words, in the over-range measurement of the voltage signal to be measured provided in the first embodiment of the present application, the output value of the voltage signal to be measured is α times of the measured value of the voltage signal to be measured.

Referring again to fig. 3, in the second embodiment of the present application, the over range unit 120 may include a first resistor R1 and a second resistor R2, and the first resistor R1 may be disposed between the first switch K1 and the ground level, and the second resistor R2 may be disposed between the first switch K1 and the first electrical signal channel ATE 1. When the electrical signal to be tested of the semiconductor device is a current signal, the over-range unit 120 of the present embodiment may be selected, and the precision measurement unit PMU connected to the first electrical signal channel ATE channel1 only needs to measure a shunt value flowing through the resistor R2, and may obtain an output value of the current signal to be tested of the semiconductor device after automatically completing data processing of the shunt value under the scheduling of a test program of an ATE machine.

Further, when the over-range unit 120 is configured as shown in fig. 3, the measurement range of the auxiliary measurement circuit 1000 is α times of the measurement range of the precision measurement unit PMU connected to the first electrical signal channel ATE 1, where α ═ R1+ R2/R1, R1 is the resistance value of the first resistor, and R2 is the resistance value of the second resistor. In other words, in the over-range measurement of the current signal to be measured provided in the second embodiment of the present application, the output value of the current signal to be measured is α times of the measured value of the current signal to be measured.

In addition, in an embodiment of the present application, the value ranges of the first resistor R1 and the second resistor R2 can be determined according to the range of the PMU measuring range of the precision measurement unit and the value range of the electrical signal to be measured.

Specifically, as an option, based on that the measurement value of the electrical signal to be measured is relatively high in measurement accuracy when the measurement value is between 1/2 and 2/3 of the range of the PMU, and the voltage signal to be measured of the conventional semiconductor device is usually less than 100 volts, in the first embodiment of the present application, the output value of the voltage signal to be measured can be obtained by measuring the divided voltage value at both ends of the first resistor R1 and further by data processing of the ATE machine, so that after the values of the first resistor R1 and the second resistor R2 are properly increased, the heating condition of the measurement circuit including the auxiliary measurement circuit can be effectively avoided, and the system error of the measurement circuit can be reduced. The values of the first resistor R1 and the second resistor R2 may range from 900 ohms to 1500 ohms, for example.

Alternatively, based on the fact that the measurement accuracy of the measured value of the electrical signal to be measured is relatively high in the range from 1/2 to 2/3 of the range of the PMU, and the current signal to be measured of the conventional semiconductor device is usually less than 1 ampere, in the second embodiment of the present application, the output value of the current signal to be measured can be obtained by measuring the shunt value flowing across the second resistor R2 and further by data processing of the ATE machine, so that when the values of the first resistor R1 and the second resistor R2 are appropriately reduced, the value of the shunt current can be effectively increased, and the system error of the measurement circuit including the auxiliary measurement circuit can be reduced. The values of the first resistor R1 and the second resistor R2 may range from 200 ohms to 300 ohms, for example.

Further, in order to provide a more accurate output value of the electrical signal, so as to facilitate operations such as product failure analysis, product qualification determination, etc. on the semiconductor device to be tested, the over-range measurement module 100 of the present application further includes a calibration coefficient determining unit 110 to determine a measurement accuracy correction value of the measured value of the electrical signal to be tested, so as to reduce an error of the output value of the electrical signal to be tested, where the error includes both an error of each device constituting the auxiliary measurement circuit and a system error of the measurement circuit related to the auxiliary measurement circuit.

Specifically, the calibration coefficient determination unit 110 may include a second electrical signal channel ATE channel2 for inputting the calibration electrical signal and a first switch K1, wherein the first switch K1 may have a function of single-pole double-throw, and the over-range unit 120 may be selectively connected to the input port Pad/Pin of the electrical signal to be measured or the second electrical signal channel ATE channel 2. In one embodiment of the present application, when the over-range unit 120 is connected to the input port Pad/Pin of the electrical signal to be measured through the first switch K1, the auxiliary measuring circuit 1000 is used to reduce the electrical signal to be measured to the range of the measuring unit (e.g., the precision measuring unit PMU of the ATE), and determine the measurement value of the electrical signal to be measured. In another embodiment of the present application, when the over-range unit 120 is connected to the second electrical signal channel ATE channel2 through the first switch K1, the calibration electrical signal is input into the over-range unit 120 through the second electrical signal channel ATE channel2, the auxiliary measurement circuit 1000 reduces the calibration electrical signal to the range of the measurement unit, the calibration electrical signal reduced by the auxiliary measurement circuit 1000 is output through the first electrical signal channel ATE channel1, and according to the value output through the first electrical signal channel ATE channel1, the measurement accuracy correction value of the measurement value of the electrical signal to be measured can be determined.

In one embodiment of the present application, the first switch K1 may be a single-pole double-throw (SPDT) switch made of, for example, a transistor, which may include, as an option: a first switch transistor (switching transistor) connected between the common terminal of the single pole double throw switch and the first switch connection terminal (switched terminal) of the single pole double throw switch, a second switch transistor connected between the common terminal of the single pole double throw switch and the second switch connection terminal of the single pole double throw switch, a first auxiliary transistor connected between the common terminal of the single pole double throw switch and the gate of the first switch transistor, and a second auxiliary transistor connected between the common terminal of the single pole double throw switch and the gate of the second switch transistor.

The second electrical signal channel ATE 2 may be configured to input a calibration electrical signal, where the calibration electrical signal is the same type of signal as the electrical signal to be measured, in other words, in a case where the electrical signal to be measured is a voltage signal, the calibration electrical signal is also a voltage signal; and under the condition that the electric signal to be measured is a current signal, the calibration electric signal is also a current signal.

Further, conventional semiconductor-based electrical performance measurements typically include two types of errors, one of which is the self-error of each device, and the other includes systematic errors of the measurement circuitry involving the auxiliary measurement circuitry. For example, when the self resistance value of the first resistor R1 has an error of 3% and the system error of the measurement circuit is 5%, the error of the output value of the electrical signal to be measured obtained by the conventional electrical signal measurement method for the semiconductor device is approximately 8% of the sum of the two.

The auxiliary measuring circuit provided by the application can firstly connect the over-range unit 120 to the second electrical signal channel ATE channel2 through the first switch K1, the over-range unit 120 reduces the calibration electrical signal with a known value to the range of the measuring unit (for example, the precision measuring unit PMU of an ATE machine), determines the measured value of the calibration electrical signal with the known value, determines the measurement precision correction value of the measured value of the electrical signal to be measured through the ratio of the measured value of the calibration electrical signal to the known value, then connects the over-range unit 120 to the input port Pad/Pin of the electrical signal to be measured through the first switch K1, the over-range unit 120 reduces the electrical signal to be measured to the range of the measuring unit (for example, the precision measuring unit PMU of the ATE machine), determines the measured value of the electrical signal to be measured, and further, can input the measured value of the electrical signal to be measured and the measurement precision correction value of the electrical signal to be measured into the ATE machine, and automatically finishing the data processing of the measured value of the electric signal to be tested under the scheduling of the test program of the ATE machine, and then obtaining the output value of the electric signal to be tested of the semiconductor device.

Based on the method, the structure of the measurement circuit (including the auxiliary measurement circuit) and the devices involved in the measurement circuit employed in the process of determining the measurement accuracy correction value of the measured value of the electrical signal to be measured, which are the same as those employed in the process of determining the measured value of the electrical signal to be measured, the structure of the measurement circuit and the devices involved in the measurement circuit, both types of errors occurring in the conventional measurement of the electrical properties of the semiconductor described above can be cancelled out each other in the data processing of the subsequent measured value. The output value of the electric signal to be measured obtained by the auxiliary measuring circuit has higher accuracy, and the subsequent operations such as product failure analysis, product qualification judgment and the like can be conveniently and better performed on the semiconductor device to be measured.

Therefore, the auxiliary measuring circuit provided by the embodiment of the application can realize the over-range and accurate measurement of the electrical signal in the electrical performance measurement of the semiconductor device.

Further, after it is predetermined that the value range of the electrical signal to be measured does not exceed the range of the measurement unit (e.g., the PMU of the ATE), an embodiment of the present application further provides an option of directly measuring the electrical signal to be measured by the measurement unit (i.e., using a direct measurement circuit) or measuring the electrical signal to be measured by the auxiliary measurement circuit 1000 (i.e., using an auxiliary measurement circuit). Further, the auxiliary measurement circuit 1000 provided in an embodiment of the present application can also ensure that the direct measurement circuit and the auxiliary measurement circuit are not executed at the same time.

Specifically, in an embodiment of the present application, the auxiliary measurement circuit 1000 further includes a second switch K2 disposed between the signal input end Pad/Pin and the first electrical signal channel ATE channel1, where the second switch K2 is configured to selectively enable the signal input end Pad/Pin to be electrically connected to the first electrical signal channel ATE channel1 directly, in other words, after the second switch K2 is closed, a measurement unit (e.g., a precision measurement unit PMU of an ATE machine) can directly measure an electrical signal to be measured. Alternatively, the second switch K2 may be a single pole, single throw switch.

In addition, in an embodiment of the present application, the auxiliary measuring circuit 1000 further includes a protection unit 130 disposed between the first switch K1 and the second switch K2, wherein a control signal of the protection unit 130 may be the same as a control signal of the first switch, and both are control signals ATE control1, so as to prevent the first electrical signal channel ATE channel1 and the second electrical signal channel ATE channel2 from being directly electrically connected. In other words, the protection unit is used for controlling the second switch to be disconnected when the first switch connects the over-range unit to the second electric signal channel. Alternatively, the protection unit 130 may include an or gate circuit, and alternatively, the protection unit 130 may also include an and gate circuit.

Specifically, the ATE machine may issue two control signals ATE control1 and ATE control2, respectively, control signal ATE control1 controlling first switch K1, and control signal ATE control2 controlling second switch K2.

Referring again to fig. 2 and 3, in one embodiment of the present application, when the protection unit 130 selects to include an or gate, the first switch K1 is set to be closed at a high level control and a first switch K1 is closed at a low level control and B, that is, when the control signal ATE control1 is at a high level, the first switch K1 is closed at a, and the over-range unit 120 is connected to the second electrical signal channel ATE channel2, and the over-range unit 120 reduces the known value of the calibration electrical signal to be within the range of the measurement unit (e.g., the precision measurement unit PMU of the ATE machine), and determines the measurement value of the known value of the calibration electrical signal; when the control signal ATE control1 is at a low level, the first switches K1 and B are closed, so that the over-range unit 120 is connected to the signal input port Pad/Pin, the over-range unit 120 reduces the electrical signal to be measured to a range of a measurement unit (e.g., a precision measurement unit PMU of an ATE), and determines a measurement value of the electrical signal to be measured. Meanwhile, the second switch K2 is set to be open under high-level control, and the second switch K2 is closed under low-level control, that is, when the control signal ATE control2 is at a high level, the second switch K2 is open, and when the control signal ATE control2 is at a low level, the second switch K2 is closed, so that the direct electrical connection between the signal input Pad/Pin and the first electrical signal channel ATE channel1 is realized. Therefore, in this embodiment, the second switch K2 is controlled by the control signals ATE control1 and ATEcontrol2 together via an or gate, and when the control signal ATE control1 is at a high level, the second switch K2 is in an open state regardless of whether the control signal ATE control2 is at a high level or a low level, so that when the first switches K1 and a are closed to obtain the measurement accuracy correction value of the measurement value of the electrical signal to be measured, it is possible to prevent the measurement accuracy correction value of the measurement value of the electrical signal to be measured from being unable to be obtained effectively due to the second switch K2 being closed.

In another embodiment of the present application, when the protection unit 130 selects to include the and gate circuit, the first switch K1 is set to be closed at a position a under low level control, the first switch K1 is closed at a position B under high level control, that is, when the control signal ATE control1 is low level, the first switch K1 is closed at a position a, when the over-range unit 120 is connected to the second electrical signal channel ATE 2, the over-range unit 120 reduces the known value of the calibration electrical signal to be within the range of the measurement unit (e.g., the precision measurement unit PMU of the ATE), and determines the measurement value of the known value of the calibration electrical signal; when the control signal ATE control1 is at a high level, the first switches K1 and B are closed, so that the over-range unit 120 is connected to the signal input port Pad/Pin, the over-range unit 120 reduces the electrical signal to be measured to a range of a measurement unit (e.g., a precision measurement unit PMU of an ATE), and determines a measurement value of the electrical signal to be measured. Meanwhile, the second switch K2 is set to be open under low-level control, and the second switch K2 is closed under high-level control, that is, when the control signal ATE control2 is at a low level, the second switch K2 is open, and when the control signal ATE control2 is at a high level, the second switch K2 is closed, so that the direct electrical connection between the signal input Pad/Pin and the first electrical signal channel ATE channel1 is realized. Therefore, in this embodiment, the control signals ATE control1 and ATEcontrol2 control the second switch K2 together through the and circuit, and when the control signal ATE control1 is at a low level, the second switch K2 is in an open state regardless of whether the control signal ATE control2 is at a high level or a low level, so that when the first switches K1 and a are closed to obtain the measurement accuracy correction value of the measurement value of the electrical signal to be measured, it is possible to prevent the measurement accuracy correction value of the measurement value of the electrical signal to be measured from being unable to be effectively obtained due to the second switch K2 being closed.

Furthermore, it will be understood by those skilled in the art that the specific structure of the protection unit may be varied to achieve the results and advantages described in the present specification without departing from the technical solutions claimed in the present application. For example, the protection unit may further adopt a nor gate circuit, a nand gate circuit, and the like, so as to control the second switch to be disconnected when the first switch connects the over-range unit to the second electrical signal channel, thereby preventing the first electrical signal channel from being directly electrically connected to the second electrical signal channel.

Fig. 4 is a flow chart of a method 2000 of measuring an electrical signal of a semiconductor device according to an embodiment of the present application. As shown in fig. 4, another aspect of the present application further provides a semiconductor device electrical signal measuring method 2000, where the semiconductor device electrical signal measuring method 2000 can be implemented by the auxiliary measuring circuit 1000 according to any of the above embodiments, and includes:

and S1, connecting the over-range unit to the second electric signal channel through the first switch.

S2, a calibration electrical signal of known value is input into the second electrical signal path to determine a measurement value of the calibration electrical signal by the measurement unit.

And S3, determining the measurement accuracy correction value of the measured value of the electric signal to be measured according to the ratio of the measured value of the calibration electric signal to the known value.

And S4, connecting the over-range unit to the input end of the electrical signal to be measured through the first switch.

And S5, inputting the electrical signal to be measured into the electrical signal to be measured input end so as to determine the measured value of the electrical signal to be measured through the measuring unit.

And S6, determining the output value of the electric signal to be measured according to the measured value of the electric signal to be measured and the measurement precision correction value of the measured value of the electric signal to be measured.

Specifically, in the method 2000 for measuring an electrical signal of a semiconductor device provided by the present application, the over-range unit 120 may be first connected to the second electrical signal channel ATE channel2 through the first switch K1, and the over-range unit 120 reduces a known value of the calibration electrical signal to a range of a measurement unit (e.g., a precision measurement unit PMU of an ATE machine), and determines a measurement value of the known value of the calibration electrical signal. The calibration electrical signal and the electrical signal to be measured are the same kind of signal, in other words, under the condition that the electrical signal to be measured is a voltage signal, the calibration electrical signal is also a voltage signal; and under the condition that the electric signal to be measured is a current signal, the calibration electric signal is also a current signal.

Alternatively, in an embodiment of the present application, when the calibration electrical signal is a voltage signal, the overranging unit 120 provided in the first embodiment of the present application may be used, and the voltage division value across the first resistor R1 is measured by the precision measurement unit PMU connected to the first electrical signal channel ATE channel1, that is, the measured value of the calibration electrical signal with the known value is obtained.

Alternatively, in another embodiment of the present application, when the calibration electrical signal is a current signal, the over-range unit 120 provided in the second embodiment of the present application may be used, and the shunt value flowing through the resistor R2, that is, the measurement value of the calibration electrical signal with the known value, is measured by the precision measurement unit PMU connected to the first electrical signal channel ATE 1.

Further, the measurement accuracy correction value α' of the measured value of the electrical signal to be measured can be determined by the ratio between the known value of the calibration electrical signal and the measured value of the calibration electrical signal.

In other words, in the over-range measurement of the electrical signal to be measured provided in the present application, the output value of the electrical signal to be measured (i.e., the actual value of the electrical signal to be measured) is α times of the measured value of the electrical signal to be measured, where α ═ R1+ R2/R1, R1 is the resistance value of the first resistor in the over-range unit 120, and R2 is the resistance value of the second resistor in the over-range unit 120. However, since in conventional semiconductor electrical performance measurement, the measurement circuit involved in measuring the voltage or current values on the pins of the semiconductor device has errors of the device itself and systematic errors of the measurement circuit, for example, in the over-range measurement of the electrical signal to be measured provided by the present application, numerical errors of the first and second resistors and systematic errors of the measurement circuit. Therefore, there are many errors between the output value of the electrical signal to be measured obtained by multiplying the measured value of the electrical signal to be measured by the theoretical value α and the true value of the electrical signal to be measured. The calibration coefficient determining unit provided by the application can determine the measurement accuracy correction value alpha' of the measured value of the electric signal to be measured by the method. After the measured value of the electrical signal to be measured is multiplied by the measurement accuracy correction value α 'of the measured value of the electrical signal to be measured, the obtained output value of the electrical signal to be measured can be offset by the system error and the device error based on the method, the measurement circuit structure, and the devices involved in the measurement circuit adopted in the process of determining the measurement accuracy correction value α' of the measured value of the electrical signal to be measured being the same as the method, the measurement circuit structure, and the devices involved in the process of determining the measured value of the electrical signal to be measured. Therefore, the output value of the electric signal to be tested has relatively high accuracy, and a user can conveniently perform operations such as product failure analysis and product qualification judgment on the semiconductor device to be tested.

After determining the measurement accuracy correction value α' of the measured value of the electrical signal to be measured, the over-range unit 120 may be connected to the input port Pad/Pin of the electrical signal to be measured through the first switch K1, and the over-range unit 120 reduces the electrical signal to be measured to be within the range of the measurement unit (e.g., the precision measurement unit PMU of the ATE), and determines the measured value of the electrical signal to be measured. The electrical signal to be measured can be a voltage signal or a current signal.

Alternatively, in an embodiment of the present application, when the electrical signal to be measured is a voltage signal, the over-range unit 120 provided in the first embodiment of the present application may be used, and the voltage-divided value at two ends of the first resistor R1 is measured by the precision measurement unit PMU connected to the first electrical signal channel ATE 1, that is, the measured value of the voltage signal to be measured.

Alternatively, in another embodiment of the present application, when the electrical signal to be measured is a current signal, the over-range unit 120 provided in the second embodiment of the present application may be used, and the precision measurement unit PMU connected to the first electrical signal channel ATE channel1 may measure the shunt value flowing through the resistor R2, that is, the measured value of the current signal to be measured.

The output value of the electrical signal to be measured can be determined according to the measured value of the electrical signal to be measured and the measurement precision correction value alpha ', and specifically, the output value of the electrical signal to be measured can be obtained by multiplying the measured value of the electrical signal to be measured and the measurement precision correction value alpha' of the measured value of the electrical signal to be measured. Furthermore, the data processing of the measured value can be automatically completed through the scheduling of the test program of the ATE machine, so as to obtain the output value of the electric signal to be tested of the semiconductor device.

Therefore, the method for measuring the electric signal of the semiconductor device can realize the over-range and accurate measurement of the electric signal in the electric performance measurement of the semiconductor device.

In addition, in one embodiment of the present application, it is possible to select to directly measure the electrical signal to be measured by the measurement unit (using a direct measurement circuit) or measure the electrical signal to be measured by the auxiliary measurement circuit (using an auxiliary measurement circuit) according to the value range of the electrical signal to be measured. Specifically, the auxiliary measuring circuit 1000 further includes a second switch K2 disposed between the signal input port Pad/Pin and the first electrical signal channel ATE channel1, and the second switch K2 is configured to selectively and electrically connect the signal input port Pad/Pin and the first electrical signal channel ATE channel 1. In this embodiment, the value range of the electrical signal to be measured may be predetermined, and after determining that the value range of the electrical signal to be measured does not exceed the range of the measurement unit (e.g., the PMU of the ATE), the second switch K2 is closed to enable the measurement unit to directly measure the electrical signal to be measured.

Further, to avoid the process of measuring the calibration electrical signal from occurring simultaneously with the process of directly measuring the electrical signal to be measured by the measuring unit, an or gate circuit may be provided between the first switch K1 and the second switch K2.

In addition, another aspect of the present application further provides a semiconductor device electrical signal measurement circuit, and specifically includes: a measurement unit, a processing unit and the auxiliary measurement circuit described above.

The measurement unit may be used to determine a measurement value of a signal under test of the semiconductor device. The processing unit can be used for determining the measurement precision correction value of the measured value of the electric signal to be measured and determining the output value of the electric signal to be measured according to the measured value of the electric signal to be measured and the measurement precision correction value. In addition, since the contents and structures referred to in the above description of the auxiliary measuring circuit 1000 are fully or partially applicable to the semiconductor device electrical signal measuring circuit described herein, the contents related or similar thereto will not be described in detail.

In one embodiment of the application, the measurement unit may also be used to determine a measurement value of a calibration electrical signal of known value. The processing unit may be further configured to determine a measurement accuracy correction value for the measured value of the electrical signal under test based on a ratio of the measured value of the calibration electrical signal to the known value of the calibration electrical signal.

By adopting the semiconductor device electric signal measuring circuit provided by the application, the electric signal can be measured in an out-of-range and accurate manner in the measurement of the electric performance of the semiconductor device.

In addition, the application also provides a semiconductor device electric signal measuring device. Fig. 5 shows a schematic view of a measuring device 5000 according to an embodiment of the present application.

As shown in fig. 5, the semiconductor device electrical signal measurement apparatus 5000 may include one or more processors 5010, and one or more memories 5020. Among other things, the memory 5020 has stored therein computer readable code that, when executed by the one or more processors 5010, can perform spatial measurement methods as described above.

Furthermore, the method or apparatus provided according to the embodiments of the present application may also be implemented by means of the architecture of the computing device 3000 shown in fig. 6. As shown in fig. 6, computing device 3000 may include a bus 3010, one or more CPUs 3020, a Read Only Memory (ROM)3030, a Random Access Memory (RAM)3040, a communication port 3050 to connect to a network, input/output components 3060, a hard disk 3070, and the like. A storage device in the computing device 3000, such as the ROM 3030 or the hard disk 3070, may store various data or files used for processing and communication of the semiconductor device electric signal measurement method provided herein and program instructions executed by the CPU. Computing device 3000 can also include user interface 3080. Of course, the architecture shown in FIG. 6 is merely exemplary, and one or more components of the computing device shown in FIG. 6 may be omitted when implementing different devices, as desired.

The semiconductor device electric signal measuring equipment provided by the application can realize the over-range and accurate measurement of the electric signal in the measurement of the electric performance of the semiconductor device.

According to yet another aspect of the present application, there is also provided a computer-readable storage medium. FIG. 7 shows a schematic diagram of a storage medium according to an embodiment of the present application.

As shown in fig. 7, computer storage media 4020 has stored thereon computer readable instructions 4010. When the computer readable instructions 4010 are executed by a processor, a semiconductor device electrical signal measurement method according to an embodiment of the present application described with reference to the above drawings can be performed. Computer-readable storage media include, but are not limited to, volatile memory and/or nonvolatile memory, for example. Volatile memory can include, for example, Random Access Memory (RAM), cache memory (or the like). The non-volatile memory may include, for example, Read Only Memory (ROM), a hard disk, flash memory, and the like.

Further, according to an embodiment of the present application, the processes described above with reference to the flowcharts may be implemented as a computer software program. For example, the present application provides a non-transitory machine-readable storage medium having stored thereon machine-readable instructions executable by a processor to perform instructions corresponding to the method steps provided herein, such as: connecting the over-range unit to a second electrical signal channel through a first switch; inputting a calibration electrical signal of known value into the second electrical signal channel to determine a measurement value of the calibration electrical signal by the measurement unit; determining a measurement precision correction value of the measurement value of the electric signal to be measured according to the ratio of the measurement value of the calibration electric signal to the known value; the over-range unit is connected to the input end of the electric signal to be tested through the first switch; inputting the electrical signal to be measured into an input end of the electrical signal to be measured so as to determine the measured value of the electrical signal to be measured through a measuring unit; and determining the output value of the electric signal to be measured according to the measured value of the electric signal to be measured and the measurement precision correction value of the measured value of the electric signal to be measured. In such an embodiment, the computer program may be downloaded and installed from a network over a communication interface, and installed from a removable medium. The computer program, when executed by a Central Processing Unit (CPU), performs the above-described functions defined in the method of the present application.

The method and apparatus, device of the present application may be implemented in a number of ways. For example, the methods and apparatuses, devices of the present application may be implemented by software, hardware, firmware, or any combination of software, hardware, firmware. The above-described order for the steps of the method is for illustration only, and the steps of the method of the present application are not limited to the order specifically described above unless specifically stated otherwise. Further, in some embodiments, the present application may also be embodied as a program recorded in a recording medium, the program including machine-readable instructions for implementing a method according to the present application. Thus, the present application also covers a recording medium storing a program for executing the method according to the present application.

The above description is only an embodiment of the present application and an illustration of the technical principles applied. It will be appreciated by those skilled in the art that the scope of protection covered by this application is not limited to the particular combination of features described above, but also covers other arrangements formed by any combination of features described above or their equivalents without departing from the spirit of the invention. For example, the above features may be replaced with (but not limited to) features having similar functions disclosed in the present application.