1. A stress measuring apparatus for measuring stress of an implant intervention body to an object of action, the object of action being a tissue organ surrounding the implant intervention body, the apparatus comprising: the device comprises a sensor unit, a signal reading unit and a conversion unit;

the sensor unit comprises a capacitance and a first inductance; the capacitor and the first inductor form a resonant circuit, the capacitor deforms in response to the stress to change the resonant frequency of the resonant circuit, and the capacitor is a sandwich-type capacitor or an interdigital capacitor; the signal reading unit comprises a second inductor; the second inductor is in mutual inductance coupling with the first inductor, and the resonant frequency of the resonant loop is obtained through the second inductor;

and the conversion unit obtains the stress corresponding to the resonance frequency according to a relational expression of frequency and force.

2. The measurement device of claim 1, wherein the capacitance and the first inductance are formed by laser etching a conductive substrate.

3. The measurement device of claim 2, wherein the conductive substrate comprises at least one of copper, gold, or silver.

4. The measuring device according to claim 1, wherein the frequency-force relationship is obtained by a calibration experiment of force and frequency; the calibration experiment specifically comprises the following steps: the method comprises the steps of sequentially applying a plurality of forces with different sizes on the sensor unit, recording the resonant frequency of the sensor unit under the action of the forces with different sizes, drawing a change relation graph of the resonant frequency and the forces, and obtaining a relation formula of the frequency and the forces through fitting.

5. The measurement device of claim 1, wherein the signal reading unit further comprises: and the frequency sweeping element is used for generating a frequency sweeping signal, the frequency sweeping signal enters the second inductor, and the resonance of the resonance loop is realized through magnetic coupling.

6. The measurement device of claim 1, wherein the signal reading unit further comprises: and the sampling element is connected with the second inductor and is used for sampling the signal on the second inductor.

7. The measurement device of claim 6, wherein the signal reading unit further comprises: and the main control element is connected with the sampling element and used for processing the signal output by the sampling element to obtain the resonant frequency.

8. The measurement device of claim 1, further comprising: and the display unit is connected with the signal reading unit and used for displaying the reading result of the signal reading unit through a human-computer interaction interface.

9. A method for measuring a stress applied to an implanted interventional body to a target of action, the target of action being a tissue organ surrounding the implanted interventional body, the method using a stress measuring device according to any one of claims 1 to 9, the method comprising:

disposing the sensor unit between the implant body and the action target, the stress acting on the sensor unit;

acquiring the resonant frequency of the sensor unit through the signal reading unit;

and the conversion unit obtains the stress corresponding to the resonance frequency according to a relational expression of frequency and force.

10. The measurement method of claim 9, wherein the signal reading unit further comprises a sweep element, a sampling element, and a master control element;

acquiring, by the signal reading unit, a resonant frequency of the sensor unit, including: the master control element sends a frequency sweeping instruction to the frequency sweeping element to enable the frequency sweeping element to send a frequency sweeping signal;

the frequency sweeping signal enters the second inductor and enters the first inductor through magnetic coupling, so that the resonant circuit resonates;

the sampling element collects output signals of the second inductor and transmits the collected output signals to the main control element for processing;

and the main control element processes the output signal to obtain the resonant frequency of the resonant circuit.

Background

With the development of medical technology, the medical instruments for implantation intervention have the obvious advantages of being minimally invasive, rapid, safe and effective, and become one of the fields of rapid development and application of medical engineering in recent years. The involved interventional diagnosis means is combined with the traditional internal medicine and surgery as a clinical three-pillar discipline. Therefore, the medical instruments for intervention implantation are more and more widely applied, and have been applied to medical foundations such as cardiovascular, cerebrovascular and orthopedics, and specialities such as clinical treatment, such as joint intervention implantation, stent intervention and the like. However, currently, there is no in vivo measurement method for the force generated between the implant insertion body and the surrounding tissue and organ, and it is sometimes necessary to measure the force generated between the implant insertion body and the surrounding tissue and organ at different positions, and therefore, there is a need for a measurement apparatus and a measurement method capable of measuring the stress in vivo.

Disclosure of Invention

In view of the above, embodiments of the present invention provide a stress measuring apparatus and a stress measuring method to solve at least one problem in the background art.

In order to achieve the purpose, the technical scheme of the invention is realized as follows:

the embodiment of the invention provides a stress measuring device, which is used for measuring the stress of an implantation intervention body on an action target, wherein the action target is a tissue organ around the implantation intervention body, and the device comprises: the device comprises a sensor unit, a signal reading unit and a conversion unit;

the sensor unit comprises a capacitance and a first inductance; the capacitor and the first inductor form a resonant circuit, the capacitor deforms in response to the stress to change the resonant frequency of the resonant circuit, and the capacitor is a sandwich-type capacitor or an interdigital capacitor.

The signal reading unit comprises a second inductor; the second inductor is in mutual inductance coupling with the first inductor, and the resonant frequency of the resonant loop is obtained through the second inductor;

and the conversion unit obtains the stress corresponding to the resonance frequency according to a relational expression of frequency and force.

Optionally, the capacitor and the first inductor are formed by laser etching a conductive substrate.

Optionally, the conductive substrate comprises a softer conductive material such as copper, gold, or silver.

Optionally, the frequency-force relation formula is obtained by a calibration experiment of force and frequency; the calibration experiment specifically comprises the following steps: the method comprises the steps of sequentially applying a plurality of forces with different sizes on the sensor unit, recording the resonant frequency of the sensor unit under the action of the forces with different sizes, drawing a change relation graph of the resonant frequency and the forces, and obtaining a relation formula of the frequency and the forces through fitting.

Optionally, the signal reading unit further includes: and the frequency sweeping element is used for generating a frequency sweeping signal, the frequency sweeping signal enters the second inductor, and the resonance of the resonance loop is realized through magnetic coupling.

Optionally, the signal reading unit further includes: and the sampling element is connected with the second inductor and is used for sampling the signal on the second inductor.

Optionally, the signal reading unit further includes: and the main control element is connected with the sampling element and used for processing the signal output by the sampling element to obtain the resonant frequency.

Optionally, the measuring device further comprises: and the display unit is connected with the signal reading unit and used for displaying the reading result of the signal reading unit through an interpersonal interaction interface.

The embodiment of the present invention further provides a stress measurement method, which is used for measuring the stress generated by an implanted intervention body and an acting target, where the acting target is a tissue organ around the implanted intervention body, and the method uses the above stress measurement apparatus, and the method includes:

disposing the sensor unit between the implant body and the action target, the stress acting on the sensor unit;

acquiring the resonant frequency of the sensor unit through the signal reading unit;

and the conversion unit obtains the stress corresponding to the resonance frequency according to a relational expression of frequency and force.

Optionally, the signal reading unit further includes a frequency sweeping element, a sampling element and a main control element;

acquiring, by the signal reading unit, a resonant frequency of the sensor unit, including: the master control element sends a frequency sweeping instruction to the frequency sweeping element to enable the frequency sweeping element to send a frequency sweeping signal;

the frequency sweeping signal enters the second inductor and enters the first inductor through magnetic coupling, so that the resonant circuit resonates;

the sampling element collects output signals of the second inductor and transmits the collected output signals to the main control element for processing;

and the main control element processes the output signal to obtain the resonant frequency of the resonant circuit.

Optionally, the frequency-force relation formula is obtained by a force-frequency calibration experiment, where the calibration experiment specifically includes: the method comprises the steps of sequentially applying a plurality of forces with different sizes on the sensor unit, recording the resonant frequency of the sensor unit under the action of the forces with different sizes, drawing a change relation graph of the resonant frequency and the forces, and obtaining a relation formula of the frequency and the forces through fitting.

The stress measuring device and the stress measuring method provided by the embodiment of the invention are used for measuring the stress between an implant intervention body and an acting target, wherein the acting target is a tissue organ around the implant intervention body, and the stress measuring device comprises: the device comprises a sensor unit, a signal reading unit and a conversion unit; the sensor unit comprises a capacitance and a first inductance; the capacitor and the first inductor form a resonant circuit, the capacitor deforms in response to the stress to change the resonant frequency of the resonant circuit, and the capacitor is a sandwich-type capacitor or an interdigital capacitor; the signal reading unit comprises a second inductor; the second inductor is in mutual inductance coupling with the first inductor, and the resonant frequency of the resonant loop is obtained through the second inductor; and the conversion unit obtains the stress corresponding to the resonance frequency according to a relational expression of frequency and force. According to the embodiment of the invention, the sensor unit and the signal reading unit are connected through mutual inductance coupling between the inductors, the sensor unit does not need to be powered by itself, and the stress between the implant intervention body and the acted target can be acquired in real time in a wireless mode.

Drawings

FIG. 1 is a schematic structural diagram of a stress measuring device according to an embodiment of the present invention;

FIG. 2 is a schematic diagram of a sensor unit including a capacitive sandwich according to one embodiment of the present invention;

FIG. 3 is a schematic diagram of a sensor cell including an interdigital capacitor, in accordance with one embodiment of the present invention;

FIG. 4 is a schematic view of a sensor unit of one embodiment of the present invention;

FIG. 5 is a schematic structural diagram of a stress measuring device according to another embodiment of the present invention;

FIG. 6 is a flow chart of a method of measuring stress according to one embodiment of the invention.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.

Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the present invention; that is, not all features of an actual embodiment are described herein, and well-known functions and structures are not described in detail.

In the following description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.

The embodiment of the invention provides a stress measuring device, which is used for measuring the stress between an implant intervention body and an acting target, wherein the acting target is a tissue organ around the implant intervention body, and the device comprises: the device comprises a sensor unit, a signal reading unit and a conversion unit; the sensor unit comprises a capacitor and a first inductor, and different first inductors and different capacitors can be formed by changing the etched circuit; the capacitor and the first inductor form a resonant circuit, the capacitor deforms in response to the stress to change the resonant frequency of the resonant circuit, and the capacitor is a sandwich-type capacitor or an interdigital capacitor; the signal reading unit comprises a second inductor; the second inductor is in mutual inductance coupling with the first inductor, and the resonant frequency of the resonant loop is obtained through the second inductor; and the conversion unit obtains the stress corresponding to the resonance frequency according to a relational expression of frequency and force.

Fig. 1 is a schematic configuration diagram of a stress measuring apparatus according to an embodiment of the present invention, as shown in fig. 1, the stress measuring apparatus is used for measuring a stress of an implanted interventional body on a target of action, the target of action is a tissue organ around the implanted interventional body, and the apparatus includes a sensor unit 1, a signal reading unit 2 and a conversion unit 3; the sensor unit 1 is used for sensing stress between an implant and an acted target, and the sensor unit 1 comprises a first inductor 11 and a capacitor 12; the capacitor 12 and the first inductor 11 form a resonant circuit, and the resonant circuit has a resonant frequency, which changes with the change of the capacitance value.

In practical application, the implant medium is an implant intervention joint or the like. It will be appreciated that any desired implant intervention can be targeted.

The sensor unit 1 is arranged between the implant body and the target to be acted on, and the capacitor 12 deforms in response to the stress between the implant body and the target to be acted on, so that the capacitance value of the capacitor changes, and the resonant frequency of the resonant circuit is further changed.

The signal reading unit 2 includes a second inductance 23; the second inductor 23 is mutually inductively coupled with the first inductor 11, and the resonant frequency of the resonant tank is obtained through the second inductor 23.

Specifically, the resonant circuit is equivalent to the second inductor 23 through mutual inductance coupling, that is, a reflection impedance, which is a part of the input impedance of the second inductor, the input impedance of the second inductor 23 is read out, and the resonant frequency of the resonant circuit is obtained by analyzing the characteristics of the input impedance.

More specifically, the frequency characteristic curve of the input impedance of the second inductor 23 will peak around the resonance frequency, so that the resonance frequency can be obtained by measuring the peak frequency of the frequency characteristic curve of the input impedance.

The signal reading unit 2 transmits the read resonant frequency to the conversion unit 3, and the conversion unit 3 obtains the stress corresponding to the resonant frequency according to a relational expression of frequency and force.

The capacitor of the embodiment of the invention is a sandwich-type capacitor or an interdigital capacitor. FIG. 2 is a schematic diagram of a sensor unit including a capacitive sandwich according to one embodiment of the present invention; fig. 3 is a schematic diagram of a sensor cell including an interdigital capacitor, in accordance with one embodiment of the present invention. The conductive substrate in fig. 2 and 3 is a copper substrate. The circuit in fig. 2 and 3 is a laser etching circuit, the laser etching device etches along the laser etching circuit to form a first inductor and a capacitor, the first inductor and the capacitor form a resonant circuit, and different first inductors and capacitors are formed by changing the etching circuit, so that resonant circuits with different resonant frequencies can be obtained, and the purpose of array design is achieved.

Fig. 4 is a schematic diagram of a sensor unit according to an embodiment of the present invention. As shown in fig. 4, the sensor unit is mainly made of a conductive material, a dielectric layer and an encapsulation layer. The first inductor and the capacitor are mainly manufactured by etching conductive base materials such as copper and the like. The sandwich-type capacitor adopts Polydimethylsiloxane (PDMS) as a dielectric layer, the first inductor and the capacitor are packaged by utilizing polyethylene, and the interdigital capacitor adopts PDMS as the dielectric layer and a packaging material.

In practical applications, the size of the sensor unit may be modified according to the size of the implant.

It is to be understood that the material forming the sensor unit is not limited to copper, but may be other conductive materials such as gold, silver, and the like. It is noted that any conductive material with a low hardness may be applied to the embodiments of the present invention as a material for forming the sensor unit.

Response time, recovery for sensorsTime and sensitivity are important parameters for showing the performance of the sensor. According to the embodiment of the invention, the digital bridge LCR is adopted to measure the response time and the recovery time of the prepared sensor unit, and the sensor unit can rapidly respond and recover under different loads of 0.5N, 1N, 1.5N, 2N, 2.5N, 3N, 3.5N and 4N. Under 2N load, the response time of the sensor unit reaches 1.4 seconds, the recovery time of the sensor unit reaches 0.7 second, and the sensitivity of the sensor unit reaches 0.04KPa^-1。

In practical applications, the measuring device may include a plurality of sensor units having different resonant frequencies, the plurality of sensor units being correspondingly disposed between different measurement targets and the implant body to measure the stress between the plurality of measurement targets and the implant body, respectively.

Specifically, the frequency-force relation formula is obtained through a calibration experiment of force and frequency. The calibration experiment specifically comprises the following steps: the method comprises the steps of sequentially applying a plurality of forces with different sizes on the sensor unit 1, recording the resonant frequency of the sensor unit 1 under the action of the forces with different sizes, drawing a change relation graph of the resonant frequency and the forces, and obtaining a relation formula of the frequency and the forces through fitting.

In another embodiment of the present invention, as shown in fig. 5, the signal reading unit 2 further comprises a frequency sweep element 22, and the frequency sweep element 22 is used for generating a frequency sweep signal, and the frequency sweep signal enters the second inductor 23 to make the resonant circuit resonate through magnetic coupling.

In a specific embodiment, the frequency sweep element 22 employs an ADI AD9910 chip capable of generating a frequency sweep signal up to 400MHz, with a frequency resolution of 0.23 Hz. But is not limited to this, and any element that can implement a frequency sweep may be applied to embodiments of the present invention.

In an embodiment, the signal reading unit 2 further includes a sampling element 24, and the sampling element 24 and the second inductor 23 are electrically connected to collect an output signal of the second inductor 23.

In a specific embodiment, the sampling element comprises an ADC sampling element or an FPGA module. But is not limited thereto, and any element that can realize sampling may be applied to the embodiment of the present invention.

In an embodiment, the signal reading unit further includes a main control element 21, the main control element 21 is connected to the frequency sweep element 22, the main control element 21 sends a frequency sweep instruction to the frequency sweep element 22, so that the frequency sweep element 22 sends a frequency sweep signal, and the frequency sweep signal passes through the second inductor 23, and the resonant tank resonates through magnetic coupling. Meanwhile, the main control element 21 is further connected to the sampling element 24, receives the signal collected by the sampling element, and processes the signal to obtain the resonant frequency of the resonant tank.

In a specific embodiment, the main control element transmits the processed resonant frequency of the resonant tank to the conversion unit 3, and the conversion unit 3 obtains the stress corresponding to the resonant frequency according to a relationship formula between frequency and force.

In a specific embodiment, the master control chip comprises an STM32 chip, and the CPU maximum speed of the STM32 chip reaches 72 MHz. But is not limited thereto, and any element that can implement the master may be applied to the embodiment of the present invention.

In an embodiment, the measuring device further comprises a display unit 4, and the display unit 4 is connected with the signal reading unit 2 and the converting unit 3 and is used for displaying output results of the signal reading unit 2 and the converting unit 3 through an interpersonal interaction interface. The man-machine interaction interface can comprise the functions of signal real-time display, signal processing, peak detection, data storage and the like.

The sensor unit 1 and the signal reading unit 2 are connected through mutual inductance coupling between the inductors, the sensor unit 1 does not need to be powered by itself, and stress of an implant body on an action target can be acquired in real time in a wireless mode.

The embodiment of the present invention further provides a method for measuring stress, which is used for measuring stress generated by an implanted intervention body on an action target, where the action target is a tissue organ around the implanted intervention body, and the method uses the device for measuring stress, specifically referring to fig. 6, and the method includes the following steps:

step 61, arranging the sensor unit between the implant carrier and the target, the stress acting on the sensor unit;

step 62, acquiring the resonant frequency of the sensor unit through the signal reading unit;

and 63, the conversion unit obtains the stress corresponding to the resonance frequency according to a relation formula of the frequency and the force.

Specifically, the relationship formula of the frequency and the force is obtained through a calibration experiment of the force and the frequency, and the calibration experiment specifically includes: the method comprises the steps of sequentially applying a plurality of forces with different sizes on the sensor unit, recording the resonant frequency of the sensor unit under the action of the forces with different sizes, drawing a change relation graph of the resonant frequency and the forces, and obtaining a relation formula of the frequency and the forces through fitting.

In an optional implementation manner of the embodiment of the present invention, the signal reading unit further includes a frequency sweeping element, a sampling element, and a main control element;

acquiring, by the signal reading unit, a resonant frequency of the sensor unit, including: the master control element sends a frequency sweeping instruction to the frequency sweeping element to enable the frequency sweeping element to send a frequency sweeping signal;

the frequency sweeping signal enters the second inductor and enters the first inductor through magnetic coupling, so that the resonant circuit resonates;

the sampling element collects output signals of the second inductor and transmits the collected output signals to the main control element for processing;

and the main control element processes the output signal to obtain the resonant frequency of the resonant circuit.

Specifically, the relationship formula of the frequency and the force is obtained through a calibration experiment of the force and the frequency, and the calibration experiment specifically includes: the method comprises the steps of sequentially applying a plurality of forces with different sizes on the sensor unit, recording the resonant frequency of the sensor unit under the action of the forces with different sizes, drawing a change relation graph of the resonant frequency and the forces, and obtaining a relation formula of the frequency and the forces through fitting.

The stress measuring device and the stress measuring method provided by the embodiment of the invention are used for measuring the stress between an implant intervention body and an acting target, wherein the acting target is a tissue organ around the implant intervention body, and the stress measuring device comprises: the device comprises a sensor unit, a signal reading unit and a conversion unit; the sensor unit comprises a capacitance and a first inductance; the capacitor and the first inductor form a resonant circuit, the capacitor deforms in response to the stress to change the resonant frequency of the resonant circuit, and the capacitor is a sandwich-type capacitor or an interdigital capacitor; the signal reading unit comprises a second inductor; the second inductor is in mutual inductance coupling with the first inductor, and the resonant frequency of the resonant loop is obtained through the second inductor; and the conversion unit obtains the stress corresponding to the resonance frequency according to a relational expression of frequency and force. According to the embodiment of the invention, the sensor unit and the signal reading unit are connected through mutual inductance coupling between the inductors, the sensor unit does not need to be powered by itself, and the stress between the implant intervention body and the acted target can be acquired in real time in a wireless mode.

It should be appreciated that reference throughout this specification to "one embodiment," "some embodiments," "other embodiments," "alternative embodiments," or "a particular embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, appearances of the phrases "an embodiment," "some embodiments," "other embodiments," "alternative embodiments," or "a particular embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. It should be understood that, in the various embodiments of the present application, the sequence numbers of the above-mentioned processes do not mean the execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application. The above-mentioned serial numbers of the embodiments of the present application are merely for description and do not represent the merits of the embodiments.

The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, and any modifications, equivalents, improvements, etc. that are within the spirit and principle of the present invention should be included in the present invention.