1. The crystal growth furnace is characterized by comprising a crucible (2), wherein the crucible (2) is used for bearing silicon liquid;

silicon leakage detection device (1), silicon leakage detection device (1) sets up crucible (2) below, silicon leakage detection device (1) includes:

the detection line (12) is a conductive metal wire, and the detection line (12) is arranged in a projection area right below the crucible (2) and is arranged in the projection area;

the detection unit (13) is connected with a wire inlet end (121) and a wire outlet end (122) of the detection line (12) and is used for detecting the electrical property parameter values of the detection line (12).

2. The crystal growth furnace according to claim 1, wherein the silicon leakage detection device (1) further comprises:

the detection line comprises a coating material layer (11), wherein the coating material layer (11) is made of high-temperature-resistant insulating loose materials, and the coating material layer (11) is arranged on the upper surface and/or the lower surface of the detection line (12).

3. The crystal growth furnace according to claim 2, characterized in that the cladding material layer (11) is a single layer or a plurality of layers.

4. The crystal growth furnace according to claim 2, characterized in that the edge area of the cladding material layer (11) is higher than the central area of the cladding material layer (11).

5. The crystal growth furnace according to claim 2, characterized in that the detection lines (12) are arranged at a distance d between adjacent line sections, the value of d being within a certain range.

6. The crystal growth furnace according to claim 5, characterized in that the inspection lines (12) are arranged in a uniform manner, the distance d between adjacent line segments of the inspection lines (12) is constant, and the value d is within a certain range.

7. The crystal growth furnace according to claim 1, characterized in that the crystal growth furnace further comprises a control system (4), wherein the control system (4) is connected with the detection unit (13) in the silicon leakage detection device (1) and is used for acquiring the electrical property parameter values of the detection line (12).

8. The crystal growth furnace according to claim 7, characterized in that the control system (4) further comprises an electrical property parameter threshold value judging module (3) for judging whether the electrical property parameter value of the detection line (12) exceeds a threshold value.

9. The crystal growth furnace according to claim 7, further comprising an alarm system (5), wherein the alarm system (5) is connected with the control system (4), and after the control system (4) sends out an alarm signal, alarm processing is performed.

Background

The main growth mode of the monocrystalline silicon wafer is a Czochralski method, the temperature of molten silicon can reach 1400-1500 ℃ in the growth process of the monocrystalline crystal, and silicon leakage accidents can occur from the melting of the silicon material to the end of the equal diameter of the silicon material due to various reasons, such as crucible crystallization, bulging or manual misoperation.

At present, a single crystal furnace cannot monitor silicon leakage in real time, generally, the silicon leakage is detected by back-pushing according to ignition of a heater after the silicon leakage, and sometimes, the silicon leakage is found only when a corrugated pipe at the bottom of the furnace burns, so that the single crystal furnace is greatly damaged.

Disclosure of Invention

In order to solve the above problems, an object of the present invention is to provide a crystal growth furnace, which can detect silicon leakage in real time, so that the danger can be handled in time, the detection result is accurate, and there is no false alarm to cause property loss.

According to the invention discloses a crystal growth furnace, which comprises a crucible, wherein the crucible is used for bearing silicon liquid, and a silicon leakage detection device is arranged below the crucible and comprises: the detection line is a conductive metal wire, is arranged in a projection area right below the crucible and is arranged in the projection area; and the detection unit is connected with the wire inlet end and the wire outlet end of the detection line and is used for detecting the electrical property parameter values of the detection line.

Through set up hourglass silicon detection device under the crucible in the projection area, spill from the crucible when silicon liquid, can directly drip on the detection line, the detecting element perception detects the change of the electrical property parameter of line, in time feeds back to long brilliant stove to make hourglass silicon by real time monitoring, and then avoid dangerous emergence.

In some embodiments, the silicon leakage detection apparatus further comprises: the coating material layer is made of high-temperature-resistant insulating loose materials and is arranged on the upper surface and/or the lower surface of the detection line.

In some embodiments, the cover material layer is a single layer or multiple layers.

In some embodiments, the edge region of the layer of cladding material is higher than the central region of the layer of cladding material.

In some embodiments, the 20-100mm area of the edge region of the coverstock is higher than the central region of the coverstock layer.

In some embodiments, the distance between adjacent line segments in the arrangement process of the detection lines is d, and the value of d needs to be within a certain range.

In some embodiments, the distance d between adjacent segments of the detection lines during the arranging process ranges from 1mm to 50 mm.

In some embodiments, the detection lines are arranged uniformly, a distance d between adjacent line segments of the detection lines is constant, and the value d is within a certain range.

In some embodiments, the crystal growth furnace further comprises a control system, wherein the control system is connected with the detection unit in the silicon leakage detection device and is used for acquiring the electrical property parameter values of the detection lines.

In some embodiments, the control system further comprises an electrical property threshold determination module for determining whether the electrical property parameter value of the detection line exceeds a threshold value.

In some embodiments, the crystal growth furnace further comprises an alarm system, the alarm system is connected with the control system, and after the control system sends out an alarm signal, alarm processing is carried out.

Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.

Drawings

FIG. 1 is a schematic view of one embodiment of a crystal growth furnace of the present invention;

FIG. 2 is a schematic front view of one embodiment of a silicon leak detection apparatus of the present invention;

FIG. 3 is a schematic view of the detection line arrangement on the back side of one embodiment of the device for detecting silicon leakage according to the present invention;

FIG. 4 is a schematic view of the detection line arrangement of another embodiment of the silicon leakage detection device of the present invention;

FIG. 5 is a schematic view of the detection line arrangement of still another embodiment of the silicon leakage detection apparatus of the present invention;

reference numerals:

a silicon leakage detection device 1;

a covering material layer 11; a through-hole 110;

a detection line 12; an incoming line end 121; an outlet terminal 122;

a detection unit 13;

a crucible 2; an electrical property threshold value judging module 3; a control system 4; an alarm system 5.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.

The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize the applicability of other processes and/or the use of other materials.

Next, a crystal growth furnace according to an embodiment of the present invention is described with reference to the drawings, and as shown in fig. 1, the crystal growth furnace includes a crucible 2, silicon liquid is carried in the crucible 2, and a silicon leakage detection device 1 is disposed below the crucible 2, wherein the silicon leakage detection device includes a detection line 12 and a detection unit 13.

The detection line 12 is a conductive wire, such as a molybdenum wire, a tungsten wire, a nichrome wire, or an iron-chromium wire, and when the silicon liquid drops on the detection line 12, electrical properties of the detection line, such as resistance, current, voltage, or electrical signals, change. The detection line 12 is arranged in a projection area under the crucible and arranged in the projection area, because of the influence of gravity, the silicon liquid generally falls along the projection area, and the detection line 12 is arranged under the crucible to sense the dropping or seepage of the silicon liquid more quickly. Wherein, some thermal field components (such as a main heater electrode, a bottom heater electrode, an exhaust hole, a supporting rod and the like, not shown in the figure) exist in the area right below the crucible and need to penetrate through a detection line, and the detection line needs to avoid the thermal field components when being arranged.

And the detection unit 13 is connected with the wire inlet end 121 and the wire outlet end 122 of the detection line 12, and is used for detecting the electrical property parameters of the detection line 12, and when the electrical property parameters of the detection line 12 are changed by the falling silicon liquid, the detection unit 13 obtains the change value and feeds the change value back to the crystal growth furnace, so that the silicon leakage treatment is quickly and rapidly carried out.

Therefore, the silicon leakage detection device is arranged in the projection area under the crucible, when silicon liquid leaks from the crucible and falls on the detection line, the detection unit senses the change of the electrical property parameters of the detection line and feeds the change back to the crystal growth furnace in time, so that the silicon leakage is monitored in real time, and further danger is avoided.

It is understood that, in order to ensure that the leaked silicon is detected in time, the arrangement region of the detection lines should cover the projection region right below the crucible as much as possible, but if those skilled in the art do not have the leaked silicon in a certain region according to the actual situation, the modification of the arrangement mode to avoid the region is within the protection scope of the present invention.

The applicant finds that although the detection line is directly arranged in the projection area right below the crucible, the detection line can also detect the silicon leakage in real time, the sensitivity of the detection line is influenced due to the high temperature in the furnace, so that a false signal of the silicon leakage is generated, and the detection result of the silicon leakage is not accurate, so that the detection device for the silicon leakage is improved.

As shown in fig. 2-3, the silicon leakage detection device further includes a cladding material layer 11, the cladding material layer 11 is a high temperature resistant insulating loose material, the cladding material layer 11 is disposed on the upper surface and/or the lower surface of the detection line 12, the cladding material layer is required to cover the detection line 12 on all sides, and a through hole 110 is present, which is required to penetrate through and accommodate the thermal field component. As shown in FIG. 2, the front surface of the silicon leakage detection device is a coating material layer 11, a detection line 12 is arranged below the coating material layer 11, the coating material layer 11 substantially completely covers the detection line 12, and a through hole 110 which needs to be accommodated and penetrates through a thermal field component is arranged on the coating material layer. As shown in FIG. 3, the back of the silicon leakage detecting device is a detecting line 12 arranged according to the projection right below the crucible, and the inlet end 121 and the outlet end 122 of the detecting line 12 are connected with the detecting unit 13 and avoid the through hole 110 needed to accommodate the penetrating thermal field member. The coating material layer has high temperature resistance, insulation and loosening performance, and the detection line is arranged under the coating material layer, so that the high temperature in the crystal growth furnace can be effectively isolated, the detection line is not influenced by the high temperature in the furnace, the detection result is more accurate, and the pollution of the conductive metal detection line of the detection line to the furnace body can be reduced. And the leaked silicon liquid can enter the detection lines arranged under the cladding material from the holes of the cladding material, so that the electrical performance parameters of the detection lines can be detected in real time, the detection result is accurate, the dangerous condition can be effectively avoided, the silicon leakage is detected, and the misjudgment of the silicon leakage can be avoided.

The coating material layer 11 can be disposed on the upper surface of the inspection line, and the lower surface of the inspection line can be directly made of dense material, for example, directly disposed on a bottom protection pressing plate or a heat insulation material of a crystal growth furnace. Or the coating material can be arranged on the upper surface and the lower surface of the detection line, namely the detection line 12 is clamped in the middle, so that the high temperature in the furnace is further isolated, the detection result is more accurate, and in addition, the adaptability of the silicon leakage detection device and a thermal field component (such as a heat insulation material in the furnace and a bottom protection pressing plate) is further improved, so that the silicon leakage detection device is more conveniently arranged in the furnace.

In some embodiments, the softening point of the coating material layer 11 is greater than 1500 ℃, and the resistivity is greater than 10⁶Omega, cm, aperture of 2-100 μm, and thickness of 0.01-10 mm. The environment temperature of the crystal growth furnace is about 1450 ℃, the softening point of the coating material layer is greater than 1500 ℃, the high temperature in the furnace does not influence the coating material layer, the coating material layer is arranged on the upper surface and/or the lower surface of the detection line, namely, the coating material layer covers the detection line, so that the detection line is isolated from the high temperature in the furnace, the detection line is guaranteed to be influenced by the heat preservation in the furnace, and the detection result is more accurate. The coating material layer has a resistivity of more than 10⁶Omega cm, the coating material layer is an insulating material and will not react with the detection line, and the pore diameter of the coating material layer is 2-100 μm, such as 2 μm, 3 μm, 4 μm, and 5 μmm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm or 100 μm, the thickness of the covering material layer being 0.01mm to 1mm, for example 0.01mm, 0.02mm, 0.03mm, 0.04mm, 0.05mm, 0.06mm, 0.07mm, 0.08mm, 0.09mm, 0.1mm, 0.2mm, 0.3mm, 0.4mm, 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm, 1mm, 2mm, 3mm, 4mm, 5mm, 6mm, 7mm, 8mm, 9mm or 10 mm. Therefore, the silicon liquid entering the pores can fall into the detection line quickly and cannot be solidified on the coating material layer, so that the electrical property parameter values of the detection line can be detected in real time, the detection result is accurate, the dangerous condition can be effectively avoided, and the misjudgment of silicon leakage can be avoided.

In some specific embodiments, the material of the coating material layer 11 is quartz fiber cloth, the quartz fiber cloth is glass fiber made of silicon dioxide and natural quartz crystal, the softening point of the glass fiber cloth is higher than 1500 ℃, the quartz fiber cloth has high heat resistance and insulating property, can effectively isolate the high temperature in the crystal growth furnace, and does not react with the detection line. The aperture of the quartz fiber cloth is 2-10 μm, for example, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm or 10 μm, so that the silicon liquid can enter the pores of the quartz fiber cloth, the thickness of the quartz fiber cloth is less than 10mm, and thus the silicon liquid entering the pores can quickly fall into the detection line without being solidified on the quartz fiber cloth, so that the resistance value of the detection line can be detected in real time, and the detection result is accurate, thereby not only effectively avoiding the occurrence of dangerous situations, but also avoiding the misjudgment of silicon leakage. In addition, the purity of the silicon dioxide in the quartz fiber cloth is 99.95%, and the pollution to the crystal growing furnace is avoided.

In some specific embodiments, the layer of cladding material 11 is a single layer or multiple layers, and the inspection line 12 is disposed below the cladding material. Wherein, the multilayer is 2 at least layers, and the detection line is arranged in this cladding material layer below, does not influence the detection of leaking silicon detection device to leaking silicon on the one hand like this, makes silicon liquid can fall into on the detection line through the cladding material layer, can not solidify on the cladding material layer again. On the other hand, the thickness of the silicon leakage detection device can be adjusted, so that the silicon leakage detection device is more suitable for the structure of a thermal field.

In other embodiments, the layers of cladding material 11 are multiple layers, and the inspection line 12 is disposed between the cladding materials. Wherein, the coating material layer above the detection line is an upper layer. It can be understood that the upper layer is the number of layers between the silicon leakage direction of the coating material layer and the detection line, and in order to enable the silicon liquid to enter the coating material layer and not to be solidified in the coating material, at this time, the number of layers of the upper layer cannot be too large, and specifically, the number of layers of the upper layer can be set according to the thickness of a single layer of the coating material layer. The coating material layer below the detection line is a lower layer, the coating material layer of the lower layer is laid on a thermal field component (such as a heat insulation material or a pressure protection bottom plate of a furnace bottom, and the figure is not marked), the number of layers of the coating material of the lower layer can be specifically set according to the requirement of the thermal field, so that the coating material layer can not only effectively protect the thermal field component in the furnace, but also can be randomly set according to the temperature, space or other requirements on the thermal field, and the requirement of the thermal field is met.

In some embodiments, in order to avoid the silicon liquid falling into the edge of the cladding material layer from falling off the edge of the cladding material layer and being missed, the edge area of the cladding material layer 11 is higher than the central area. Wherein the 20-100mm area of the edge area of the cladding material is higher than the central area of the cladding material layer. It should be noted that 20-100mm of the edge region of the covering material means that the position from the outermost end of the edge, that is, the position from the edge region 0mm to the edge region 20mm, the position from the edge region 0 to the edge region 30mm, the position from the edge region 0 to the edge region 40mm, the position from the edge region 0 to the edge region 50mm, the position from the edge region 0 to the edge region 60mm, the position from the edge region 0 to the edge region 70mm, the position from the edge region 0 to the edge region 80mm, the position from the edge region 0 to the edge region 90mm, or the position from the edge region 0 to the edge region 100 mm; the central area of the cladding material corresponds to 20mm from the edge area to the central point, 30mm from the edge area to the central point, 40mm from the edge area to the central point, 50mm from the edge area to the central point, 60mm from the edge area to the central point, 70mm from the edge area to the central point, 80mm from the edge area to the central point, 90mm from the edge area to the central point, and 100mm from the edge area to the central point. The height difference can be prepared by arranging different layers in the edge area and the central area of the coating material layer, for example, 10 layers, 12 layers, 15 layers, 20 layers or 30 layers of the coating material layer can be arranged in the edge area, and 1 layer, 2 layers, 5 layers, 10 layers of the coating material layer can be arranged in the central area, so that the silicon liquid falling into the edge of the coating material layer can be prevented from falling off from the edge and entering the heat insulation material or the bottom protection pressing plate below the crucible to be missed for detection, and the effect can be achieved by arranging the coating material layer on the upper layer or the lower layer of the edge area, but the silicon liquid can fall on a detection line and can not be solidified on the coating material, and the thickness of the layers on the upper layer of the edge area needs to be smaller than 10 mm.

In some specific embodiments, as shown in fig. 3 to 5, the distance between adjacent segments of the detection line in the arrangement process is d, and the value of d needs to be within a certain range. Specifically, d is 1 to 50mm, and may be, for example, 1mm, 2mm, 3mm, 4mm, 5mm, 6mm, 7mm, 8mm, 9mm, 10mm, 11mm, 15mm, 20mm, 25mm, 30mm, 35mm, 40mm, 45mm or 50 mm. In the arrangement process of the detection lines, if the distance d is too large, the silicon liquid cannot fall onto the detection lines from the pores of the coating material layer 11, so that silicon leakage cannot be found or cannot be found at the first time. If d is too small, a short circuit may be caused, and erroneous determination may occur. When the arrangement of the detection lines is 1-50mm, the silicon leakage can be effectively monitored, and misjudgment can not be caused. In order to satisfy the arrangement of the detection lines for different shapes of the cladding materials or to perform the arrangement of the detection lines according to the actual situation of silicon leakage, in the above specific embodiment, the value of d does not need to be a fixed value, i.e., d may or may not be a fixed value.

In some embodiments, the detection lines 12 are arranged uniformly, for example, in a linear loop, a curved loop or a circular loop. As shown in fig. 4, the incoming line end 121 of the detection line 12 enters from one end of the coating material layer, the outgoing line end 122 of the detection line 12 extends out from the same end of the coating material layer according to the arrangement manner of a linear loop, and the incoming line end 121 and the outgoing line end 122 of the detection line 12 are connected with the detection unit 13, so that the loop connection of the detection line 12 is realized, and the detection of the resistance value or other electrical property parameter values is performed. As shown in fig. 5, the sensing wire 12 is in a circular loop structure, the outlet end 122 of the sensing wire 12 extends out from the same end of the cladding material layer, and the inlet end 121 and the outlet end 122 of the sensing wire 12 are connected to the sensing unit 13, so that the loop connection of the sensing wire 12 is realized, and the detection of the resistance value or other electrical property parameter values is performed. At the moment, the distance between adjacent line segments of the detection line is uniform, the d value is constant, and the d value is in a certain range, specifically, the d value is between 1mm and 50mm, so that the precision of the silicon leakage detection device can be further improved, the occurrence of silicon leakage can be sensed in time, and no misjudgment can be generated. It is understood that, at the through hole, in order to avoid the through hole for arrangement of the detection lines, there may be an error of less than 10% between the adjacent detection lines around the through hole, for example, and the range of uniform arrangement is included.

In some specific embodiments, the diameter of the detection wire is 0.1-10mm, for example 0.1mm, 0.2mm, 0.3mm, 0.4mm, 0.5mm, 1mm, 2mm, 3mm, 4mm, 5mm, 6mm, 7mm, 8mm, 9mm or 10 mm. According to the arrangement mode of the detection lines, the proper diameter of the detection lines is selected, so that the detection precision of the electrical property parameters of the detection lines can be improved, and the silicon leakage can be further rapidly and accurately treated.

In some specific embodiments, the crystal growth furnace further comprises a control system 4, and the control system 4 is connected with the detection unit 13 in the silicon leakage detection device 1 and is used for acquiring the electrical property parameter values of the detection line 12. By uploading the electrical property parameter values to the crystal growth furnace control system, the silicon leakage treatment can be more effectively carried out.

In some specific embodiments, the crystal growth furnace further comprises an alarm system 5, the alarm system 5 is connected with the control system 4, and after the control system 4 sends out an alarm signal, alarm processing is performed. By installing the alarm system, the silicon leakage treatment can be more directly and effectively carried out.

In some embodiments, the control system further comprises an electrical property parameter threshold determination module 3 for determining whether the electrical property parameter value of the sensing line 12 exceeds a threshold value. In the actual crystal growth process, for example, in the charging process of RCZ (multi-charging czochralski method) or CCZ (continuous charging czochralski method) or other cases, there may be a little silicon liquid dripping on the detection line, the amount of the silicon liquid is small, and there is no influence on the crystal growth furnace or crystal growth, or there may be caused a change in the electrical property parameter value on the detection line due to other reasons such as temperature unevenness in the thermal field, and at this time, there is no silicon leakage actually, and if the silicon leakage treatment is performed, there is a loss. By arranging the electrical performance parameter threshold value judging module in the control system, when the change of the electrical performance parameter value does not exceed the threshold value, the electrical performance parameter value can be regarded as false silicon leakage and is not processed, and once the change of the electrical performance parameter value exceeds the threshold value, an alarm is given immediately to process the silicon leakage. In the present application, the threshold value of the electrical property parameter value can be obtained by one skilled in the art through one or more previous changes of the electrical property parameter value of the real silicon leakage process and the electrical property parameter value of the false silicon leakage process in the actual production process.

The crystal growth furnace and the effect of silicon leakage thereof according to the embodiment of the invention are described in detail by specific embodiments with reference to fig. 1-5. It is to be understood that the following description is only exemplary, and not a specific limitation of the invention.

Example 1

The long crystal furnace of fig. 1 is adopted, a crucible 3 for bearing solution is installed in the long crystal furnace, a bottom protection pressing plate (not identified in the figure) is arranged below the crucible, a silicon leakage detection device 1 is arranged on the bottom protection pressing plate, the detection lines are arranged according to a non-uniform loop arrangement mode (without a coating material layer) shown in fig. 3, the detection lines need to avoid thermal field components (2 electrodes of a main heater, 2 electrodes of a side heater, 2 exhaust holes and 1 supporting rod) in the arrangement process, the distance d between adjacent line segments of the detection lines is 5-15mm (the d value is not fixed), a detection unit 13 is connected with an incoming line end 121 and an outgoing line end 122 of the detection line 12, the resistance value of the detection line is detected, silicon leakage judgment is carried out through the change of the resistance value, the detection unit is directly connected with an alarm system, and silicon leakage alarm processing.

Example 2

The silicon leakage detection device is different from the embodiment 1 in that the silicon leakage detection device comprises a cladding material layer 11, the cladding material layer 11 is provided with 7 through holes 110 which need to accommodate thermal field components (2 electrodes of a main heater, 2 electrodes of a side heater, 2 exhaust holes and 1 supporting rod) penetrating through the cladding material layer, a detection line 12 is arranged in the middle of the cladding material layer 11, the cladding material layer is quartz fiber cloth, the aperture of the cladding material layer is 6 microns, the thickness of a single layer is 0.03mm, the upper layer of the cladding material layer is 10 layers, the lower layer of the central area of the cladding material layer is 100 layers, and the lower layer of the edge area of the cladding material layer, which is 0-20mm, is 150 layers.

Example 3

The difference from example 2 is that the clad material layer was a quartz fiber cloth having a pore diameter of 2 μm and a single-layer thickness of 0.05mm, the upper layer of the clad material layer was 8 layers, the lower layer of the central region of the clad material layer was 50 layers, and the lower layer of the edge region of the clad material layer at 20mm was set to 70 layers.

Example 4

The difference from example 2 is that the detection lines are arranged in a circular loop as shown in fig. 5, and the distance d between adjacent line segments of the detection lines is 10mm (d is fixed).

Example 5

The difference from embodiment 2 is that the distance d between adjacent line segments of the detection line is 10-60mm (d value is not fixed).

Example 6

The difference from embodiment 4 is that the crystal growth furnace further includes a control system, the control system is connected to the detection unit 13 in the silicon leakage detection device 1 and is used for acquiring the resistance value of the detection line 12, the alarm system is connected to the control system and performs alarm processing after the control system sends out an alarm signal, and the control system further includes a resistance threshold value judgment module for judging whether the resistance value of the detection line 12 exceeds a threshold value.

Evaluation indexes are as follows:

silicon leakage alarm rate is alarm times/silicon leakage times

False alarm times/alarm times

The following table shows the alarm rate and the false alarm rate of the silicon leakage in the embodiments 1 to 6, and it can be seen from the table that by arranging the silicon leakage detection device under the crucible, when the silicon leakage detection device is only a detection line and a detection unit, the silicon leakage can be detected in real time, but a certain false alarm exists at the moment, after the coating material layer is arranged on the detection line, the false alarm rate is greatly reduced, and by arranging the electrical property threshold value judgment module, the alarm rate reaches 100%, and the false alarm rate is 0%.

	Silicon leakage alarm rate/%)	Rate of misjudgment/%)
			Example 1	143％	30％
Example 2	111％	10％
			Example 3	109％	9.5％
Example 4	101％	1％
			Example 5	80％	0％
Example 6	100％	0％

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.

Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.