1. The utility model provides a from heat dissipation chip which characterized in that: fractal structures include 5 different categories; one type of fractal is that the middle points of three sides of a triangle are connected in sequence; the second type of fractal is that a square nine is equally divided into a central square and eight edge squares, wherein no dividing line is arranged between any two adjacent edge squares; the three types of the fractal include that a square is divided into an inscribed regular triangle, an isosceles right triangle and two right triangles, and the base of the regular triangle is the same as that of the isosceles right triangle; the four types of the isosceles right triangles are divided into an inscribed square and three isosceles right triangles; the five types of the triangles are divided into a square and two isosceles right triangles; when multi-level fractal is carried out, the pattern positioned in the geometric center in the upper-level fractal structure is not subjected to fractal any more;

connecting the midpoints of four edges of the chip in sequence to form 1 central square and 4 vertex angle triangles;

setting 4-level second-class fractal in a central square, then carrying out 1-level third-class fractal on the central square obtained by the 1-level second-class fractal, and then carrying out 3-level first-class fractal on an inscribed regular triangle and an isosceles right triangle obtained by the 1-level third-class fractal; carrying out grade 1 three fractal on a central square obtained by grade 2 two fractal, and then carrying out grade 3 one fractal on an inscribed regular triangle obtained by grade 1 three fractal;

performing 1-level one-class fractal on 4 vertex triangles to obtain 1 central triangle and 3 edge triangles in each vertex triangle; performing 2-level four-class fractal in a central triangle, and performing 3-level two-class fractal and 2-level two-class fractal on squares obtained by the 1-level four-class fractal and the 2-level four-class fractal respectively; performing grade 1 one fractal in the edge triangle, then performing grade 1 five fractal and grade 2 one fractal on the center triangle and the edge triangle respectively, and performing grade 2 two fractal on the square obtained by the grade 1 five fractal.

2. A chip temperature measuring device is characterized in that: the temperature measurement is carried out on the self-heat-dissipation chip of claim 1, and the chip temperature measurement device comprises a measurement laser (1), a beam expander (3), a CCD camera (5), an attenuator (6), a light filter (7), a wedge-shaped plate (9), a transmission mechanism, a servo motor (14), a shell (15), a workbench, a ball hinge (18) and a heat supply laser (19);

the measuring laser (1) is fixed on the shell (15); one end of the wedge-shaped plate (9) and the upper surface of the workbench form a revolute pair, and the other end of the wedge-shaped plate is connected with the transmission mechanism; the transmission mechanism is arranged on the upper surface of the workbench, and the servo motor (14) drives the wedge-shaped plate (9) to turn over through the transmission mechanism; a beam expander (3) is arranged between the measuring laser (1) and the wedge-shaped plate (9); the CCD camera (5) is arranged on the upper surface of the workbench and is aligned to the groove for placing the chip; an attenuation mirror (6) and an optical filter (7) are arranged between the wedge-shaped plate (9) and the groove; the heat supply laser (19) is arranged on the workbench through a ball hinge (18).

3. The chip temperature measuring device according to claim 2, wherein: the transmission mechanism comprises a connecting rod (10), a sliding block (11) and a ball screw (12), the connecting rod (10) and the sliding block (11) form a rotating pair, and the sliding block (11) and the ball screw (12) form a screw pair; the servo motor (14) drives the ball screw (12) to rotate.

4. The chip temperature measuring device according to claim 2, wherein: the workbench comprises a pillar (16), a platform base (17) and a platform upper surface (21); the table posts (16) support the upper surface (21) of the platform on the platform base (17).

5. The use method of the chip temperature measuring device according to claim 2, wherein: the transmission mechanism is driven by the servo motor (14) to drive the wedge-shaped plate (9) to overturn, the position of a laser beam emitted by the measuring laser (1) on the chip (22) is changed, the change condition of interference fringes on the surface of the chip is collected by the CCD camera (5), and the temperature value distribution condition on the surface of the chip is obtained.

6. The chip temperature measuring device according to claim 2, wherein: the measuring laser selects a semiconductor laser with a wavelength of 632.8 nm.

7. The chip temperature measuring device according to claim 2, wherein: the beam expander adopts a collimation beam expander.

8. The chip temperature measuring device according to claim 2, wherein: the CCD camera adopts a linear CCD camera.

9. The chip temperature measuring device according to claim 2, wherein: the heat supply laser is connected with a ball head rod of the ball hinge by screw threads.

10. A chip temperature measuring device according to claim 2 or 3, wherein: the ball screw model is PGF 1220.

Background

An on-board chip is the main form of MEMS processing and manufacturing, the chip and electronic components can generate certain heat during normal work, if the heat is not dissipated in time, the junction temperature of the chip can rise, and even the failure of the device or system can be caused. Along with the reduction of the volume and the increase of the power of microelectronic packaging, the heat productivity of a chip in unit volume is increased sharply, and if the temperature is too high, failure is easily induced, such as: thermal breakdown, junction failure, metallization failure, and the like; higher temperatures reduce performance. In addition, the MEMS device is very prone to generate mismatch of thermal expansion coefficients of internal silicon chips, package adhesives, substrates and other structures under the continuous thermal load condition generated by the chips, interlayer thermal stress and thermal deformation are generated in the chip structure due to the thermal mismatch, delamination and warping of the package structure can be caused by peeling stress and shearing stress between structural interfaces, and the whole MEMS device can fail in a severe case. However, the conventional air cooling, liquid cooling and phase change cooling methods require additional devices such as fans, circulation systems and heat pipes, and are not suitable for application in MEMS systems of millimeter or even micron order.

Because the temperature of the chip measured in the MEMS system has the characteristics of non-contact property, high precision requirement and the like, the acquisition of accurate information such as the thermal deformation of the surface of the chip is the key point of geometric temperature measurement. With the continuous maturity and development of sensors, computers and signal processing technologies, the digital holographic interference three-dimensional shape measurement technology based on optics is rapidly developed and applied in recent years due to the advantages of non-contact, high precision, large information quantity, high speed, high automation degree and the like. The digital holographic interferometry uses a photosensitive surface of a CCD as a recording medium, and a recorded hologram is stored in a computer after being digitally processed; the reproduction of the recorded object field is achieved by digital fourier transform processing instead of optical diffraction. The spatial frequency spectrum distribution is obtained by performing fast Fourier transform operation on the recorded intensity distribution of the hologram, the frequency spectrum of the object light wave is separated and extracted from the spatial frequency spectrum distribution, and then the complex amplitude distribution of the object light wave is obtained by performing inverse Fourier transform operation. The method can complete the recording, reproduction, measurement, data processing and result output of the hologram at one time, has high measurement flexibility, and increases the interference fringe density by a phase multiplication method, so that the measurement can reach the nanometer precision to the maximum.

Disclosure of Invention

Aiming at the defects of the prior art, the invention provides a chip self-heat dissipation method and a temperature measuring device, which are used for designing a micro structure of a chip based on a fractal theory and improving the self-heat dissipation efficiency of the chip without adding an additional heat dissipation device. And the holographic interference technology is applied to measure the temperature of the chip, and the temperature of the chip is accurately measured in real time.

A self-radiating chip is realized by designing a fractal structure on the surface of the chip. The fractal structure comprises a first type fractal, a second type fractal, a third type fractal, a fourth type fractal and a fifth type fractal. The first class of fractal is formed by sequentially connecting the midpoints of three sides of a triangle. The second type of the fractal is that a square nine is equally divided into a central square and edge squares, wherein a dividing line is not arranged between every two adjacent edge squares. The three types of the fractal include that a square is divided into an inscribed regular triangle, an isosceles right triangle and two right triangles, and the base of the regular triangle is the same as that of the isosceles right triangle. The four types of the isosceles right triangles are divided into an inscribed square and three isosceles right triangles. The five types of the triangles are divided into a square and two isosceles right triangles. When multi-level fractal is carried out, the graph positioned in the geometric center in the upper-level fractal structure is not subjected to fractal any more.

The middle points of the four edges of the chip are connected in sequence to form 1 central square and 4 vertex angle triangles.

4-level second-class fractal is arranged in the central square, then 1-level third-class fractal is carried out on the central square obtained by the 1-level second-class fractal, and then 3-level first-class fractal is carried out on an inscribed regular triangle and an isosceles right triangle obtained by the 1-level third-class fractal. And performing 1-level three-class fractal on the central square obtained by the 2-level two-class fractal, and performing 3-level one-class fractal on the inscribed regular triangle obtained by the 1-level three-class fractal.

And performing 1-level fractal on the 4 vertex triangles to obtain 1 central triangle and 3 edge triangles in each vertex triangle. And performing 2-level four-class fractal in the central triangle, and performing 3-level two-class fractal and 2-level two-class fractal on the square obtained by the 1-level four-class fractal and the 2-level four-class fractal respectively. Performing grade 1 one fractal in the edge triangle, then performing grade 1 five fractal and grade 2 one fractal on the center triangle and the edge triangle respectively, and performing grade 2 two fractal on the square obtained by the grade 1 five fractal.

A chip temperature measuring device comprises a measuring laser, a beam expander, a CCD camera, an attenuation mirror, an optical filter, a wedge-shaped plate, a transmission mechanism, a coupler, a servo motor, a shell, a workbench, a ball hinge, a computer and a heat supply laser.

The measuring laser is fixed on the shell; one end of the wedge-shaped plate is fixed on the workbench, and the other end of the wedge-shaped plate is connected with the transmission mechanism; the transmission mechanism is fixed on the upper surface of the workbench and is connected with a servo motor fixed on the shell through a coupler. And a beam expander is arranged between the measuring laser and the wedge-shaped plate. The CCD camera is arranged on the upper surface of the workbench and is aligned to the groove for placing the chip. An attenuating mirror and an optical filter are arranged between the wedge-shaped plate and the chip groove. The ball hinge is fixed on the base of the workbench, and the heat supply laser is fixed on a ball head rod of the ball hinge. The computer is fixed on the shell.

Preferably, the measuring laser is a semiconductor laser with a wavelength of 632.8 nm.

Preferably, the beam expander adopts a collimating beam expander.

Preferably, the CCD camera is a linear CCD camera.

Preferably, the wedge-shaped plate is connected with the upper surface of the workbench through a revolute pair.

Preferably, the transmission mechanism adopts a mode that a four-bar mechanism is matched with a ball screw, and the type of the ball screw is PGF 1220.

Preferably, the servo motor is an Anchuan servo motor with the model number of SGMAHA3OOA 21.

Preferably, the heat supply laser is in threaded connection with a ball head rod of the ball hinge.

A chip temperature measuring method adopts the chip temperature measuring device, drives a transmission mechanism through a servo motor to drive a wedge-shaped plate to turn over, changes the position of a laser beam emitted by a measuring laser irradiating on a chip, and acquires the change condition of interference fringes on the surface of the chip through a CCD camera to obtain the temperature value distribution condition on the surface of the chip.

The invention has the following beneficial effects:

1. according to the invention, the multi-stage fractal structure combining the square and the triangle is adopted on the chip, so that the self-heat dissipation effect of the chip can be effectively realized, and the heat dissipation efficiency of the chip is increased.

2. According to the invention, by adopting a mode of connecting the heat supply laser with the spherical hinge through threads, the heat supply lasers with different powers can be replaced, and the function of providing heat sources in different directions for the chip is easily realized.

3. The invention skillfully realizes the angle adjustment of the wedge-shaped plate by applying the four-bar mechanism, so that the wedge-shaped plate can interfere laser beams at different angles.

4. According to the invention, the four-bar mechanism and the ball screw are combined, and a small servo motor is used for driving, so that the accurate control of a temperature measuring area of the chip is realized.

Drawings

FIG. 1 is a schematic view of an embodiment of a temperature measuring device;

FIG. 2 is a two-dimensional schematic diagram of a chip self-heat-dissipation fractal structure in an embodiment;

FIG. 3 is a three-dimensional schematic diagram of a chip self-heat-dissipation fractal structure in an embodiment;

FIG. 4 is a comparison graph of the temperature measurement of the chip in the example and the ordinary chip.

Detailed Description

The invention is further explained below with reference to the drawings;

as shown in fig. 1, a chip temperature measuring device includes a measuring laser 1, a beam expander 3, a CCD camera 5, an attenuator 6, an optical filter 7, a wedge plate 9, a transmission mechanism, a coupler 13, a servo motor 14, a housing 15, a workbench, a ball hinge 18, a computer 23, and a heat supply laser 19. The transmission structure comprises a connecting rod 10, a sliding block 11 and a ball screw 12, and the working table comprises a table column 16, a platform base 17 and a platform upper surface 21. The platform base 17 is placed on the ground and the housing 15 is covered on the platform base 17. The temperature measuring elements and the like are arranged in the inner space of the shell, so that the interference of external irrelevant factors can be effectively shielded.

The measuring laser 1 is fixed on the housing 15; one end of the wedge-shaped plate 9 is fixed on the upper surface 21 of the platform, and the other end is connected with the transmission mechanism; the transmission mechanism is fixed on the upper surface 21 of the platform and is connected with a servo motor 14 fixed on the shell 15 through a coupling 13. A beam expander 3 is arranged between the measurement laser 1 and the wedge plate 9. The CCD camera 5 is mounted on the upper surface 21 of the stage in alignment with the recess in which the chip 22 is placed. An attenuation mirror 6 and a filter 7 are arranged between the wedge-shaped plate 9 and the chip groove. A ball hinge 18 is fixed to the platform base 17, and a heat supply laser 19 is fixed to a ball head shaft of the ball hinge 18. The computer 23 is fixed to the housing 15.

The measuring laser 1 emits near-infrared laser 2 with the wavelength of 632.8nm, the near-infrared laser is diffused into a group of fine parallel laser beams 4 through the collimation beam expander 3, and the parallel laser beams 4 interfere after passing through the wedge-shaped flat plate 9 to form a group of parallel interference light 8. The interference light 8 is filtered out through the optical filter 7, the light intensity of the filtered light is reduced through the attenuator 6, and the better observation intensity of the CCD camera 5 is achieved. The interference light passing through the attenuation mirror 6 strikes the surface of the chip 22 to form dense interference fringes with equal width. Since the chip 22 is slightly deformed by heating, the shape of the interference fringes projected onto the surface of the chip 22 is changed, the interference images are recorded by the CCD camera 5 and input to the computer 23, and the thermal deformation and temperature field distribution pattern of the chip surface is obtained through an image processing program edited by MATLAB language.

The wedge-shaped flat plate 9 is connected with the connecting rod 10 through a rotating pair, the connecting rod 10 is connected with the sliding block 11 through a rotating pair, and the ground of the sliding block 11 is in smooth contact with the upper surface 21 of the workbench. The transmission mechanism is driven by a servo motor 14 to drive the ball screw 12 to rotate, and the type of the ball screw is selected as PGF 1220. The rotation of ball screw 12 drives slider 11 with its complex to carry out linear motion, and then drives wedge flat plate 9 and can carry out the rotation of certain angular range to realized interfering the adjustability of light, made the mechanism measure and have certain flexibility.

The heat supply laser 19 is connected with the ball hinge 18 through threads, and the laser has detachability and is convenient to use lasers with different powers. The ball hinge 18 is nested on the platform base 17, and stable positioning is realized. The laser 19 can be easily rotated within a certain angle range by using the ball hinge 18, so that heat sources at different positions can be provided for the chip 22.

As shown in fig. 2, a chip self-heat dissipation method is implemented by designing a fractal structure on the surface of a chip. The fractal structure comprises a first type fractal, a second type fractal, a third type fractal, a fourth type fractal and a fifth type fractal. The first class of fractal is formed by sequentially connecting the midpoints of three sides of a triangle. The second type of the fractal is that a square nine is equally divided into a central square and edge squares, wherein a dividing line is not arranged between every two adjacent edge squares. The three types of the fractal forms that a square is divided into an inscribed regular triangle, an isosceles right triangle and two right-angled triangles, and the base of the regular triangle is the same as that of the isosceles right triangle. The four types of the isosceles right triangles are divided into an inscribed square and three isosceles right triangles. The five types of the triangles are divided into a square and two isosceles right triangles. When multi-level fractal is carried out, the graph positioned in the geometric center in the upper-level fractal structure is not subjected to fractal any more.

The midpoints of the four sides of the chip are connected in sequence to form 1 central square 29 and 4 vertex triangles.

4-level second-class fractal is set in the central square 29, then 1-level third-class fractal is carried out on the central square 27 obtained by the 1-level second-class fractal, and then 3-level first-class fractal is carried out on the inscribed regular triangle and the isosceles right triangle obtained by the 1-level third-class fractal. The center square 26 obtained by the 2-level two-type fractal is subjected to the 1-level three-type fractal, and then the inscribed regular triangle obtained by the 1-level three-type fractal is subjected to the 3-level one-type fractal.

And performing 1-level fractal on the 4 vertex triangles to obtain 1 central triangle and 3 edge triangles in each vertex triangle. And performing 2-level four-class fractal in the central triangle, performing 3-level two-class fractal on a square 25 obtained by the 1-level four-class fractal, and performing 2-level two-class fractal on a square obtained by the 2-level four-class fractal. Level 1 one fractal is performed in the edge triangle, level 1 five fractal and level 2 one fractal are performed on the center triangle and the edge triangle 28, respectively, and level 2 two fractal is performed on the square 24 obtained by the level 1 five fractal.

As shown in fig. 3, a square protruding substrate 60 μm is obtained by the second-class fractal at the 4 th level in the central square 29, a square protruding substrate 60 μm is obtained by the fifth-class fractal at the 1 st level in the edge triangle 28, a square protruding substrate 60 μm is obtained by the first-class fractal at the 2 nd level, and a triangle protruding substrate 60 μm is obtained by the first-class fractal at the 3 rd level in the central square 27.

As shown in FIG. 4, when the ambient temperature is set to 22 ℃, the chip is heated for 4s by a heat source with 2W power and cooled for 30s, and when the other conditions are the same, the temperature of the chip in the embodiment can be reduced by about 5 ℃ more than that of the common chip in the same time. Therefore, the mode based on the combination of the multistage fractal structures designed by the embodiment can effectively reduce the temperature of the chip, has the chip self-heat dissipation function, and increases the heat dissipation efficiency of the chip.