1. The light-emitting device electric field driving modulation device is characterized by comprising a light-emitting device, an insulating layer, a first driving electrode, a second driving electrode and a modulation electrode;

the first driving electrode and the modulation electrode are positioned on one side of the light-emitting device, and the second driving electrode is positioned on the other side of the light-emitting device;

the insulating layers are arranged among the light-emitting device, the first driving electrode, the second driving electrode and the modulation electrode;

wherein applying a drive signal to the drive electrode energizes the light emitting device to emit light, and applying a modulation signal to the modulation electrode forms a modulated electric field around the light emitting device; and driving and modulating the light-emitting device by applying an electric signal to the driving electrode and the modulating electrode to form different electric field coupling modes.

2. A light emitting device electric field driving modulation apparatus according to claim 1, wherein the light emitting device includes but is not limited to inorganic light emitting diode, quantum dot light emitting diode, organic light emitting diode, liquid crystal display device, nano pn junction or quantum dot.

3. The modulation device of claim 1, wherein the first driving electrode and the modulation electrode are located on the same plane or different planes.

4. The modulation device according to claim 1, wherein the number of the modulation electrodes is one or more.

5. The device of claim 1, wherein the first driving electrode and the modulating electrode have shapes of stripes, fingers, rings, dots, or a combination thereof.

6. The apparatus of claim 1, wherein at least one of the first driving electrode, the second driving electrode and the modulating electrode is a transparent electrode made of graphene, indium tin oxide, carbon nanotubes, silver nanowires, copper nanowires or a combination thereof; the material of the opaque electrodes of the first drive electrode, the second drive electrode and the modulation electrode comprises gold, silver, aluminum, copper or alloys thereof.

7. The modulation device according to claim 1, wherein the material of the insulating layer comprises an organic insulating material, an inorganic insulating material, air, vacuum, or a combination thereof.

8. The modulation device of claim 1 wherein the insulating layer has a light transmittance of 70% or greater at wavelengths from 380nm to 780 nm.

9. The apparatus of claim 1, wherein the light emitting device is driven and controlled by more than one set of driving electrodes and modulating electrodes, wherein one set comprises a first driving electrode, a second driving electrode and a modulating electrode.

10. The modulation device according to claim 1, wherein the light emitting device is a full color display device.

11. The modulation device of claim 1, wherein the first driving electrode, the second driving electrode and the modulation electrode have a thickness of 1nm to 10 μm, the insulating layer has a thickness of 1nm to 10 μm, the light emitting device has a thickness of 1nm to 10 μm, and the light emitting device has a length and a width of 10nm to 1000 μm.

12. The modulation device of claim 1 or 3, wherein the horizontal distance between the first driving electrode and the modulation electrode is 1nm to 1000 μm; the vertical distance between the first driving electrode and the modulation electrode which are positioned on different planes is 1nm to 1000 μm.

13. The device according to claim 1, wherein the first driving electrode, the second driving electrode, the modulation electrode, the insulating layer, and the light emitting device are prepared by methods including but not limited to epitaxial growth, deposition, evaporation, inkjet printing, photolithography, doctor blading, spin coating, transfer, or stamping.

14. The modulation device of claim 1 wherein the driving signal waveform comprises but is not limited to sine wave, triangle wave, square wave or pulse, and the signal frequency is between 0 Hz and 100 GHz.

15. The modulation device according to claim 1, wherein the modulation signal waveform comprises a DC voltage, a sine wave, a triangular wave, a square wave or a pulse, and the signal frequency is between 0 Hz and 100 GHz.

Background

In the field of light-emitting display driving, pixels of a passive driving matrix are composed of a cathode substrate and an anode substrate together, and the intersection part of the cathode substrate and the anode substrate generates light, so that the passive driving has the advantages of simple structure, low cost and the like, but the passive driving is not suitable for large-size and high-definition display due to high driving voltage and short service life; compared with passive driving, the light-emitting device driven by the active TFT has a series of advantages, each pixel is provided with a charge storage capacitor, the peripheral driving circuit and the whole display array system are integrated on the same glass substrate, the storage effect is realized, the limitation of the number of electrodes is avoided, and high brightness and high resolution are easy to realize; the brightness and the gray scale of each pixel can be modulated, so that colorization is facilitated; the active matrix drive circuit is within the display screen and is readily miniaturized. When the method is applied to light-emitting devices such as LCDs, OLEDs and the like, the method has the advantages of high efficiency, low power consumption, integration degree, miniaturization and the like.

The current driving scheme of the active TFT-driven light emitting device is current or voltage driving, which has many advantages compared to the passive driving scheme, but due to the complex structure, high technical threshold, and high cost, it is inevitable to prepare an active layer and a plurality of electrodes, which will result in a reduced aperture ratio, a large size of the light emitting pixel, and is not favorable for submicron miniaturization of the display pixel. In order to solve the above problems, it is urgently required to design a new light emitting device driving modulation apparatus.

In conclusion, the research and development of a novel light-emitting device driving modulation device has great significance for reducing the size of a light-emitting pixel, reducing the preparation complexity of the device and realizing submicron miniaturization of a display pixel.

Disclosure of Invention

In view of this, the present invention provides an electric field driving modulation apparatus for a light emitting device, which is beneficial to reducing the size of a light emitting pixel and the complexity of device fabrication.

The invention is realized by adopting the following scheme: a light-emitting device electric field driving modulation device comprises a light-emitting device, an insulating layer, a first driving electrode, a second driving electrode and a modulation electrode;

the first driving electrode and the modulation electrode are positioned on one side of the light-emitting device, and the second driving electrode is positioned on the other side of the light-emitting device;

the insulating layers are arranged among the light-emitting device, the first driving electrode, the second driving electrode and the modulation electrode;

wherein applying a drive signal to the drive electrode energizes the light emitting device to emit light, and applying a modulation signal to the modulation electrode forms a modulated electric field around the light emitting device; and driving and modulating the light-emitting device by applying an electric signal to the driving electrode and the modulating electrode to form different electric field coupling modes.

Further, the light emitting device includes, but is not limited to, an inorganic light emitting diode, a quantum dot light emitting diode, an organic light emitting diode, a liquid crystal display device, a nano pn junction, or a quantum dot.

Further, the first driving electrode and the modulation electrode are located on the same plane or different planes.

Further, the number of the modulation electrodes is more than one.

Further, the shapes of the first driving electrode and the modulation electrode comprise strip-shaped, interdigital-shaped, annular-shaped, point-shaped electrodes or a combination thereof.

Furthermore, at least one of the first driving electrode, the second driving electrode and the modulation electrode is a transparent electrode, and the material of the electrode comprises graphene, indium tin oxide, carbon nano tubes, silver nano wires, copper nano wires or a combination of the graphene, the indium tin oxide, the carbon nano tubes and the silver nano wires; the material of the opaque electrodes of the first drive electrode, the second drive electrode and the modulation electrode comprises gold, silver, aluminum, copper or alloys thereof.

Further, the material of the insulating layer includes an organic insulating material, an inorganic insulating material, air, vacuum, or a combination thereof.

Further, the light transmittance of the insulating layer between 380nm and 780nm is greater than or equal to 70%.

Further, the light emitting device is driven and controlled by more than one set of driving electrodes and modulating electrodes, wherein one set comprises a first driving electrode, a second driving electrode and a modulating electrode.

Further, the light emitting device is a full color display device.

Further, the thickness of the first driving electrode, the thickness of the second driving electrode and the thickness of the modulation electrode are between 1nm and 10 μm, the thickness of the insulating layer is between 1nm and 10 μm, the thickness of the light-emitting device is between 1nm and 10 μm, and the length and the width of the light-emitting device are between 10nm and 1000 μm.

Further, the horizontal distance between the first driving electrode and the modulation electrode which are positioned on the same plane is 1nm to 1000 μm. The vertical distance between the first driving electrode and the modulation electrode which are positioned on different planes is 1nm to 1000 μm.

Further, the first driving electrode, the second driving electrode, the modulation electrode, the insulating layer, and the light emitting device are prepared by methods including, but not limited to, epitaxial growth, deposition, evaporation, inkjet printing, photolithography, doctor blading, spin coating, transfer, or stamping.

Further, the driving signal waveform includes but is not limited to sine wave, triangle wave, square wave or pulse, and the signal frequency is between 0 Hz and 100 GHz.

Further, the modulation signal waveform comprises direct current voltage, sine wave, triangular wave, square wave or pulse, and the signal frequency is between 0 Hz and 100 GHz.

Compared with the prior art, the invention has the following beneficial effects: the light-emitting device electric field driving modulation device provided by the invention regulates the on-off and brightness of the light-emitting device mainly through an external electric field, avoids the use of a thin film transistor, a field effect transistor and a bipolar transistor, is beneficial to reducing the size of a light-emitting pixel and the preparation complexity of the device, and is an important technical support for realizing the submicron miniaturization of a display pixel.

Drawings

FIG. 1 is a schematic structural diagram of the present invention.

Fig. 2 is a schematic structural diagram of a first embodiment of the present invention.

Fig. 3 is a schematic diagram of a driving scheme according to a first embodiment of the invention.

Fig. 4 is a schematic structural diagram of a second embodiment of the present invention. Wherein (a) is a front sectional view and (b) is a top view.

Fig. 5 is a schematic diagram of a driving scheme according to a second embodiment of the invention.

Fig. 6 is a schematic structural diagram of a third embodiment of the present invention.

Fig. 7 is a schematic diagram of a driving scheme of a third embodiment of the present invention.

In the figure, 1 is a lower transparent substrate, 2 is an insulating layer, 3 is a light emitter, 4 is an upper transparent substrate, 101 is a second driving electrode, 401 is a first driving electrode, and 402 is a modulation electrode.

Detailed Description

The invention is further explained below with reference to the drawings and the embodiments.

It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.

As shown in fig. 1, the present embodiment provides a light emitting device electric field driving modulation apparatus, which specifically includes a light emitting device, an insulating layer, a first driving electrode, a second driving electrode, and a modulation electrode;

the first driving electrode and the modulation electrode are positioned on one side of the light-emitting device, and the second driving electrode is positioned on the other side of the light-emitting device;

the insulating layers are arranged among the light-emitting device, the first driving electrode, the second driving electrode and the modulation electrode;

wherein applying a drive signal to the drive electrode energizes the light emitting device to emit light, and applying a modulation signal to the modulation electrode forms a modulated electric field around the light emitting device; and driving and modulating the light-emitting device by applying an electric signal to the driving electrode and the modulating electrode to form different electric field coupling modes.

The driving electrode, the modulation electrode and the insulating layer may constitute a capacitor device, and the driving modulation of the light emitting device is maintained by a voltage on the capacitor during a period when the external driving modulation signal is removed.

In the present embodiment, the light emitting device includes, but is not limited to, an inorganic light emitting diode, a quantum dot light emitting diode, an organic light emitting diode, a liquid crystal display device, a nano-pn junction, or a quantum dot.

In this embodiment, the first driving electrode and the modulation electrode are located on the same plane or on different planes.

In this embodiment, the number of the modulation electrodes is one or more.

In this embodiment, the shapes of the first driving electrode and the modulation electrode include a stripe shape, an interdigital shape, a ring shape, a dot shape, or a combination thereof.

In this embodiment, at least one of the first driving electrode, the second driving electrode, and the modulation electrode is a transparent electrode, and the material of the transparent electrode includes graphene, indium tin oxide, carbon nanotubes, silver nanowires, copper nanowires, or a combination thereof; the material of the opaque electrodes of the first drive electrode, the second drive electrode and the modulation electrode comprises gold, silver, aluminum, copper or alloys thereof.

In this embodiment, the material of the insulating layer includes an organic insulating material, an inorganic insulating material, air, vacuum, or a combination thereof.

In this embodiment, the light transmittance of the insulating layer between 380nm and 780nm is 70% or more.

In this embodiment, the light emitting device is driven and controlled by more than one set of driving electrodes and modulating electrodes, wherein one set comprises a first driving electrode, a second driving electrode and a modulating electrode.

In this embodiment, the light-emitting device is a full-color display device. The light-emitting device can emit light spectrums with different colors, and full-color display can be realized by independently controlling the red, green and blue three-primary-color light-emitting devices.

In the embodiment, the thickness of the first driving electrode, the thickness of the second driving electrode and the thickness of the modulation electrode are between 1nm and 10 μm, the thickness of the insulating layer is between 1nm and 10 μm, the thickness of the light-emitting device is between 1nm and 10 μm, and the length and the width of the light-emitting device are between 10nm and 1000 μm.

In this embodiment, the horizontal distance between the first driving electrode and the modulating electrode in the same plane is 1nm to 1000 μm.

In this embodiment, the first driving electrodes and the modulation electrodes located on different planes are vertically spaced by a distance of 1nm to 1000 μm.

In this embodiment, the first driving electrode, the second driving electrode, the modulation electrode, the insulating layer, and the light emitting device are prepared by methods including, but not limited to, epitaxial growth, deposition, evaporation, inkjet printing, photolithography, doctor blading, spin coating, transfer, or stamping.

In the present embodiment, the driving signal waveform includes, but is not limited to, a sine wave, a triangular wave, a square wave or a pulse, and the signal frequency is between 0 Hz and 100 GHz.

In this embodiment, the modulated signal waveform includes a dc voltage, a sine wave, a triangular wave, a square wave or a pulse, and the signal frequency is between 0 Hz and 100 GHz.

Three specific embodiments will be described below with reference to fig. 2 to 7.

The first embodiment.

As shown in fig. 2, in the present embodiment, the first driving electrode and the modulation electrode are located on the same plane, and both the first driving electrode and the modulation electrode are in a stripe shape. The manufacturing method of the electric field driving modulation device of the embodiment is as follows:

(1) the luminous body is a GaN-based LED, the transverse dimension of the LED is 5 micrometers multiplied by 5 micrometers, and the thickness of the LED is 1 micrometer.

(2) The substrate 1 with the patterned second driving electrode and the substrate 2 with the patterned first driving electrode and the patterned modulation electrode are cleaned and processed, respectively. The first driving electrode 401, the modulation electrode 402 and the second driving electrode 101 are all indium tin oxide, the sizes of the first driving electrode and the modulation electrode are 2 μm × 6 μm, the size of the second driving electrode is 6 μm × 6 μm, and the thicknesses of the three electrodes are all 10 nm.

(3) And depositing an insulating layer 2 on the surface of the second driving electrode 101 in a magnetron sputtering mode, wherein the thickness of the insulating layer 2 is 10 nm.

(4) And transferring the LED luminous body into the insulating layer, and continuously depositing the insulating layer 2 on the device after transferring the luminous body by adopting a magnetron sputtering mode to ensure that the total thickness of the insulating layer is 30 nm.

(5) And assembling the substrate 2 on the surface of the device on which the insulating layer is deposited, so that the LED luminous body is positioned in an independent space formed among the first driving electrode, the modulation electrode and the second driving electrode.

As shown in fig. 3, when the first driving electrode and the second driving electrode apply sinusoidal signals, the light emitter emits light; when the first driving electrode, the modulation electrode and the third electrode apply alternating driving signals, the luminous body emits light. When the first driving electrode, the modulation electrode and the second driving electrode apply alternating driving signals, the luminous body does not emit light.

Example two.

As shown in fig. 4, in the present embodiment, the first driving electrode and the modulation electrode are located on the same plane, the first driving electrode is annular, and the modulation electrode is strip-shaped. The manufacturing method of the electric field driving modulation device of the embodiment is as follows:

(1) the light emitting body is an OLED device, the transverse dimension of the OLED is 10 mu m multiplied by 10 mu m, and the thickness of the OLED is 1 mu m.

(2) The substrate 1 with the patterned second driving electrode and the substrate 2 with the patterned first driving electrode and the patterned modulation electrode are cleaned and processed, respectively. The first driving electrode 401, the modulation electrode 402 and the second driving electrode 101 are all made of indium tin oxide, the sizes of the first driving electrode and the modulation electrode are 7 micrometers multiplied by 15 micrometers, the sizes of the second driving electrode are 15 micrometers multiplied by 15 micrometers, and the thicknesses of the three electrodes are all 10 nm.

(3) And depositing an insulating layer 2 on the surface of the second driving electrode 101 in a magnetron sputtering mode, wherein the thickness of the insulating layer 2 is 10 microns.

(4) And transferring the OLED luminous body into the insulating layer, and continuously depositing the insulating layer 2 on the device after transferring the luminous body in a magnetron sputtering mode to enable the total thickness of the insulating layer to be 30 micrometers.

(5) And assembling the substrate 2 on the surface of the device on which the insulating layer is deposited, so that the OLED light emitter is positioned in an independent space formed among the first driving electrode, the modulation electrode and the second driving electrode.

As shown in fig. 5, when the first driving electrode and the second driving electrode apply sinusoidal signals, the light emitter emits light; when the first driving electrode, the modulation electrode and the third electrode apply alternating driving signals, the luminous body emits light. When the first driving electrode, the modulation electrode and the second driving electrode apply alternating driving signals, the luminous body does not emit light.

Example three.

As shown in fig. 6, in the present embodiment, the first driving electrode and the modulation electrode are respectively located on the upper plane and the lower plane, and the positions of the first driving electrode and the modulation electrode can be interchanged. The manufacturing method of the electric field driving modulation device of the embodiment is as follows:

(1) the luminous body is a QLED device, the transverse dimension of the QLED is 10 mu m multiplied by 10 mu m, and the thickness of the QLED is 1 mu m.

(2) The substrate 1 with the patterned second driving electrode and the substrate 2 with the patterned first driving electrode and the patterned modulation electrode are cleaned and processed, respectively. The first driving electrode 401 and the second driving electrode 101 are made of indium tin oxide, the modulation electrode 402 is made of a carbon nanotube, the sizes of the first driving electrode, the second driving electrode and the modulation electrode are all 15 micrometers multiplied by 15 micrometers, and the thicknesses of the three electrodes are all 10 nm.

(3) And depositing an insulating layer 2 on the surface of the second driving electrode 101 in a magnetron sputtering mode, wherein the thickness of the insulating layer 2 is 10 microns.

(4) And transferring the QLED luminous body into the insulating layer, and continuously depositing an insulating layer 2 on the device after transferring the luminous body by adopting a magnetron sputtering mode to ensure that the thickness of the insulating layer is 20 mu m.

(5) And spin-coating a layer of carbon nanotubes on the formed insulating layer to form a modulation electrode, wherein the spin-coating thickness is 10 nm.

(6) A 10 μm thick insulating layer was deposited on the carbon nanotube modulator electrode.

(5) And assembling the substrate 2 on the surface of the device on which the insulating layer is deposited, so that the QLED luminous body is positioned in an independent space formed between the modulation electrode and the second driving electrode.

As shown in fig. 7, when the first driving electrode and the second driving electrode apply sinusoidal signals, the light emitter emits light; when the first driving electrode, the modulation electrode and the third electrode apply alternating driving signals, the luminous body emits light. When the first driving electrode, the modulation electrode and the second driving electrode apply alternating driving signals, the luminous body does not emit light.

The foregoing is directed to preferred embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow. However, any simple modification, equivalent change and modification of the above embodiments according to the technical essence of the present invention are within the protection scope of the technical solution of the present invention.