1. A hot stamping device for embossing amorphous material, comprising: the heating furnace that has the heating chamber and be used for heating amorphous material, be located the die holder of heating chamber, set up the bed die of receiving the structure a little, gravity subassembly and with bed die complex goes up the mould, the die holder the bed die go up the mould and the gravity subassembly stacks from up stacking in proper order down, the bed die is equipped with the moulding surface that sets up, moulding surface level arranges and has seted up the receiving the structure a little, amorphous material is located the bed die with go up between the mould and the butt receive the structure a little, gravity subassembly stack in go up the mould, so that go up the mould and push down the bed die.

2. A hot embossing apparatus as claimed in claim 1, wherein: the gravity assembly includes a molten silicon plate stacked on the upper mold and a pressing member stacked on the molten silicon plate.

3. A hot embossing apparatus as claimed in claim 2, wherein: the upper die is provided with a first supporting surface, the first supporting surface faces upwards and is horizontally arranged, and the molten silicon plate is stacked on the first supporting surface; the parallelism between the first supporting surface and the plate surface of the fused silicon plate, which faces the first supporting surface, is less than 10 arcseconds.

4. A hot embossing apparatus as claimed in claim 1, wherein: the die holder is provided with a second support surface which is downward and horizontally arranged and a third support surface which is upward and horizontally arranged, the second support surface is abutted against the inner wall of the heating chamber, and the lower die is abutted against the third support surface.

5. The hot embossing apparatus of claim 4, wherein: the die holder is made of silicon carbide, and the second supporting surface and the third supporting surface are both polished.

6. The hot embossing apparatus of claim 4, wherein: the hot stamping device further comprises a heat insulation block, the heat insulation block is arranged in the heating chamber, the die holder is stacked on the heat insulation block, and the third supporting surface is abutted to the heat insulation block.

7. The hot embossing apparatus as claimed in any one of claims 1 to 6, wherein: the hot stamping device further comprises a vacuum pumping structure, and the vacuum pumping structure is used for pumping gas out of the heating chamber.

8. The hot embossing apparatus of claim 7, wherein: the vacuumizing structure comprises a vacuum pump for pumping away gas and a vacuum gauge for measuring the vacuum degree in the heating chamber, and the vacuum gauge is connected with the heating furnace.

9. The hot embossing apparatus as claimed in any one of claims 1 to 6, wherein: the hot stamping device is still including adjusting the supporting legs and laying in the vibration isolator on ground, the heating furnace through a plurality of regulation supporting legs set up in the vibration isolator, it is used for adjusting to adjust the supporting legs the position of heating furnace, so that the level of moulding surface is arranged.

10. A hot embossing method for embossing amorphous material, comprising the steps of:

preparing a heating furnace, a die holder, a lower die, a gravity assembly and an upper die;

the heating furnace is provided with a heating chamber and used for heating the amorphous material, and the die holder is placed in the heating chamber;

the lower die is provided with an upward-arranged die pressing surface, the die pressing surface is horizontally arranged, and a micro-nano structure is arranged on the die pressing surface;

stacking the die holder, the lower die and the upper die in sequence from bottom to top, wherein the amorphous material is positioned between the lower die and the upper die and abutted against the micro-nano structure;

and stacking the gravity assembly on the upper die so that the upper die presses the lower die downwards.

Background

At present, amorphous materials such as glass, plastics and amorphous alloys are widely used in the fields of national defense, industry and civilian use. Functional micro-nano structure devices such as micro-optical elements, micro-fluidic chips, micro-electro-mechanical system devices, super-hydrophobic surfaces and the like manufactured by the amorphous materials have increasingly increased demands in the fields of information and communication technology, high-end manufacturing and measuring systems, biological medical treatment and the like. The laser direct writing technology, the ion beam lithography technology, the ultraviolet lithography technology, the micro milling technology, the ultra-precision grinding technology and the hot stamping technology can be used for processing the functional micro-nano structure on the surface of the amorphous material. The hot stamping technology has the advantages of high surface replication fidelity, high manufacturing efficiency, high material utilization rate, high process modification flexibility and the like, and can be combined with the ultra-precision die processing technology to realize the rapid and low-cost manufacture of the amorphous material functional micro-nano structure device with ultrahigh surface quality.

Since 1995, hot stamping technology has been developed as a mature replication process through extensive research by researchers and engineers. The hot stamping process generally includes four steps: heating the blank to an imprinting temperature, imprinting a microstructure on the blank, cooling the article to a demolding temperature, and separating the article from the mold. The conventional hot stamping method applies a load to a blank by actuating a motor, an air cylinder, or a hydraulic cylinder to drive the movement of the upper and lower dies at the stamping stage. To prevent oxidation of the mold at high temperatures, the hot embossing process is typically performed under vacuum or an inert gas atmosphere.

Therefore, when designing the hot embossing apparatus, cooling of the kinematic pair and vacuum sealing problems need to be taken into consideration, which leads to a complicated structure of the hot embossing apparatus and a reduction in embossing accuracy.

Disclosure of Invention

An object of the embodiment of the application is to provide a hot stamping device, and aims to solve the problems that how to simplify the structure of the hot stamping device and improve the molding precision.

In order to achieve the purpose, the technical scheme adopted by the application is as follows: there is provided a hot embossing apparatus for embossing an amorphous material, the hot embossing apparatus including: the heating furnace that has the heating chamber and be used for heating amorphous material, be located the die holder of heating chamber, set up the bed die of receiving the structure a little, gravity subassembly and with bed die complex goes up the mould, the die holder the bed die go up the mould and the gravity subassembly stacks from up stacking in proper order down, the bed die is equipped with the moulding surface that sets up, moulding surface level arranges and has seted up the receiving the structure a little, amorphous material is located the bed die with go up between the mould and the butt receive the structure a little, gravity subassembly stack in go up the mould, so that go up the mould and push down the bed die.

In one embodiment, the gravity assembly includes a molten silicon slab stacked on the upper mold and a press member stacked on the molten silicon slab.

In one embodiment, the upper mold is provided with a first support surface, the first support surface facing upwards and being arranged horizontally, the molten silicon plate being stacked on the first support surface; the parallelism between the first supporting surface and the plate surface of the fused silicon plate, which faces the first supporting surface, is less than 10 arcseconds.

In one embodiment, the die holder has a downwardly facing and horizontally disposed second support surface that abuts an inner wall of the heating chamber and an upwardly facing and horizontally disposed third support surface against which the lower die abuts.

In one embodiment, the mold base is a mold base made of silicon carbide, and the second support surface and the third support surface are both polished.

In one embodiment, the hot stamping device further comprises a heat insulation block, the heat insulation block is arranged in the heating chamber, the die holder is stacked on the heat insulation block, and the third supporting surface abuts against the heat insulation block.

In one embodiment, the hot stamping device further comprises a vacuum structure for evacuating gas from within the heating chamber.

In one embodiment, the vacuum pumping structure comprises a vacuum pump for pumping out gas and a vacuum gauge for measuring the vacuum degree in the heating chamber, and the vacuum gauge is connected with the heating furnace.

In one embodiment, the hot stamping device further comprises adjusting supporting legs and a vibration isolation pad paved on the ground, the heating furnace is arranged on the vibration isolation pad through the adjusting supporting legs, and the adjusting supporting legs are used for adjusting the position of the heating furnace so as to enable the stamping surface to be horizontally arranged.

The application also provides a hot stamping method for stamping the amorphous material, which comprises the following steps:

preparing a heating furnace, a die holder, a lower die, a gravity assembly and an upper die;

the heating furnace is provided with a heating chamber and used for heating the amorphous material, and the die holder is placed in the heating chamber;

the lower die is provided with an upward-arranged die pressing surface, the die pressing surface is horizontally arranged, and a micro-nano structure is arranged on the die pressing surface;

stacking the die holder, the lower die and the upper die in sequence from bottom to top, wherein the amorphous material is positioned between the lower die and the upper die and abutted against the micro-nano structure;

and stacking the gravity assembly on the upper die so that the upper die presses the lower die downwards.

The beneficial effect of this application lies in: in the embodiment, the die holder, the lower die, the gravity assembly, the upper die and other parts are preset and stacked together layer by layer through gravity, so that the parts are extremely simple to connect, excessive kinematic pairs and connecting pairs are avoided, and the structure of the hot stamping device is simplified. And the contact surfaces of any two adjacent parts are allowed to slide relatively, so that the deformation caused by connection can be reduced, and the hot stamping precision is improved.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or exemplary technical descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a hot stamping apparatus according to an embodiment of the present disclosure;

fig. 2 is a diagram illustrating a variation process of temperature and load during a hot stamping process of a hot stamping method according to an embodiment of the present disclosure;

fig. 3 is a process flow diagram of a thermal embossing method according to an embodiment of the present disclosure.

Wherein, in the figures, the respective reference numerals:

1. heating furnace; 2. a weight; 3. melting the silicon plate; 21. a gravity assembly; 4. an upper die; 5. an amorphous material; 6. a lower die; 7. a die holder; 8. a heat insulation block; 9. a control box; 10. adjusting the supporting legs; 11. a vibration isolator; 12. a ground surface; 15. a heating chamber; 13. a thermocouple; 14. a vacuum gauge;

Detailed Description

In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the present application.

It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly or indirectly connected to the other element. The terms "upper", "lower", "left", "right", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description, but do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and operate, and thus are not to be construed as limiting the present application, and the specific meanings of the above terms may be understood by those skilled in the art according to specific situations. The terms "first", "second" and "first" are used merely for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features. The meaning of "plurality" is two or more unless specifically limited otherwise.

Referring to fig. 1, an embodiment of the present application provides a hot stamping apparatus for stamping an amorphous material 5. Optionally, the amorphous material comprises glass, plastic and amorphous alloy 5. Optionally, in this embodiment, the amorphous material is an amorphous alloy 5, the amorphous alloy 5 is solidified by super-quenching, atoms are not in time of orderly arrangement and crystallization when the alloy is solidified, the obtained solid alloy is in a long-range disordered structure, molecules (or atoms and ions) forming the solid alloy do not have a spatially regular periodicity, and no crystal grains or crystal boundaries of the crystalline alloy exist. The hot stamping device includes: the device comprises a heating furnace 1 which is provided with a heating chamber 15 and used for heating the amorphous alloy 5, a die holder 7 which is positioned on the heating chamber 15, a lower die 6 which is provided with a micro-nano structure, a gravity assembly 21 and an upper die 4 which is matched with the lower die 6. The die holder 7, the lower die 6, the upper die 4 and the gravity assembly 21 are stacked in sequence from bottom to top, optionally, the die holder 7, the lower die 6, the upper die 4 and the gravity assembly 21 are stacked together only by gravity without other kinematic pairs and connecting pairs, so that the connecting structure is extremely simple; and allows the adjacent two parts to slide along the connecting surface by a predetermined distance, so that the deformation of the parts due to the connection can be reduced, thereby improving the hot stamping accuracy. Optionally, the lower mold 6 is provided with an upward-arranged mold pressing surface, and the mold pressing surface is horizontally arranged and provided with a micro-nano structure. Optionally, the micro-nano structure may be a micro-scale array microstructure or a nano-scale array microstructure, or a combination thereof. The amorphous alloy 5 is positioned between the lower die 6 and the upper die 4 and is abutted against the micro-nano structure. The gravity assembly 21 is stacked on the upper mold 4 such that the upper mold 4 depresses the mold 6. The amorphous alloy 5 is heated to its supercooled liquid region by the heating furnace 1, and an imprinting force is applied to the amorphous alloy 5 depending on the total weight of the upper mold 4 and the gravity assembly 21. Alternatively, the heating furnace 1 has an infrared lamp disposed in the heating chamber 15, and the infrared lamp heats the amorphous mixed crystal by means of infrared radiation.

Referring to fig. 1, in the present embodiment, parts such as the mold base 7, the lower mold 6, the upper mold 4, and the gravity assembly 21 are alternatively positioned in advance and stacked layer by gravity, so that the connection between the parts is very simple without excessive kinematic pairs and connection pairs. And the contact surfaces of any two adjacent parts are allowed to slide relatively, so that the deformation caused by connection can be reduced, and the hot stamping precision is improved.

Optionally, the relative movement between the upper mold 4 and the lower mold 6 is realized by viscoelastic deformation of the glass under high temperature and gravity load, and neither the lower mold 6 nor the upper mold 4 is connected with other transmission shafts, so that the problems of cooling and vacuum sealing of kinematic pairs generated at the joint of the transmission shafts and the heating chamber 15 are avoided, and the structure of the hot stamping device is simplified.

Referring to fig. 1, optionally, in this embodiment, the upper mold 4 and the gravity assembly 21 are pre-loaded on the amorphous alloy 5 before the amorphous alloy 5 is heated, and then the heating furnace 1 is used to heat the amorphous alloy 5, so that an imprinting force is applied to the amorphous alloy 5 at the beginning stage of the temperature increase of the amorphous alloy 5, thereby facilitating the full replication of the micro-nano structure to the amorphous alloy 5 and improving the precision of hot imprinting.

Referring to fig. 1, in one embodiment, the gravity assembly 21 includes a molten silicon plate 3 stacked on an upper mold 4 and a pressing member stacked on the molten silicon plate 3. Optionally, the pressure application part is weight 2, and it can be understood that weight 2 is provided with a plurality of, and the quality of each weight 2 is all different to can be according to the hot embossing demand of difference, and select different weight 2.

Referring to fig. 1, in one embodiment, the upper mold 4 has a first supporting surface facing upward and horizontally, and the molten silicon sheet 3 is stacked on the first supporting surface; the parallelism between the first supporting surface and the plate surface of the fused silicon plate 3 arranged towards the first supporting surface is less than 10 arcseconds, so that the surface quality of the amorphous alloy 5 subjected to hot stamping is ensured.

Referring to fig. 1, in one embodiment, the mold base 7 has a second supporting surface facing downward and horizontally and a third supporting surface facing upward and horizontally, the second supporting surface abuts against the inner wall of the heating chamber 15, and the lower mold 6 abuts against the third supporting surface. Optionally, the third supporting surface is flat, so that the adhesion between the lower mold 6 and the mold base 7 can be improved, and the lower mold 6 is prevented from being damaged in the molding process.

Referring to fig. 1, in an embodiment, the mold base 7 is made of silicon carbide, and the second supporting surface and the third supporting surface are polished, so as to improve the flatness and surface finish of the second supporting surface and the third supporting surface, which is beneficial to the stability of the lower mold 6 and prevent the lower mold 6 from being damaged.

In one embodiment, the hot stamping device further comprises a heat insulation block 8, the heat insulation block 8 is disposed in the heating chamber 15, the die holder 7 is stacked on the heat insulation block 8, and the third supporting surface abuts against the heat insulation block 8, so that heat can be blocked from radiating outwards through the heat insulation block 8.

Referring to fig. 1, in one embodiment, the hot stamping apparatus further includes a vacuum structure for evacuating gas from the heating chamber 15. Optionally, the vacuum-pumping structure is used for pumping out air in the heating chamber 15 and filling inert gas into the heating chamber 15, so as to protect the amorphous alloy 5 during the hot stamping process.

Referring to fig. 1, in one embodiment, the vacuum structure includes a vacuum pump for pumping out gas and a vacuum gauge 14 for measuring a degree of vacuum in the heating chamber 15, and the vacuum gauge 14 is connected to the heating furnace 1.

In one embodiment, the hot stamping device further comprises a thermocouple 13 for measuring the temperature within the heating chamber 15. Alternatively, the temperature inside the heating chamber 15 is detected by the K-type thermocouple 13, and the temperature inside the heating chamber 15 is controlled by a programmable precision switching proportional-integral-derivative (PID).

In one embodiment, the hot stamping device further comprises a plurality of adjusting support feet 10 and vibration isolation pads 11 laid on the ground 12, the heating furnace 1 is arranged on the vibration isolation pads 11 through the plurality of adjusting support feet 10, and the adjusting support feet 10 are used for adjusting the position of the heating furnace 1 so as to enable the stamping surface to be horizontally arranged. Optionally, the vibration isolators 11 are made of cast iron for reducing and isolating the transmission of vibrations from the ground 12 to the heating furnace 1.

In one embodiment, the hot stamping apparatus further comprises a control box 9 connected to the bottom of the heating furnace 1 and used for controlling the heating furnace 1.

Referring to fig. 1, the mechanical load applied to the amorphous alloy 5 is optionally contributed by the gravity of the upper mold 4, the molten silicon plate 3 and the weight 2. Since the gravity of each part is always vertical to the ground 12, before the amorphous alloy 5 is placed, the molding surface of the lower die base 7 needs to be kept in a horizontal state by checking a calibrated digital level and adjusting the nuts of the leveling adjusting supporting feet 10.

Referring to fig. 1 and 3, the present invention further provides a hot stamping method implemented by the hot stamping apparatus.

Referring to fig. 2, in one embodiment, the hot stamping method includes the following steps:

preparing a heating furnace 1, a die holder 7, a lower die 6, a gravity assembly 21 and an upper die 4;

the heating furnace 1 is provided with a heating chamber 15 and used for heating the amorphous alloy 5, and the die holder 7 is placed in the heating chamber 15;

the lower die 6 is provided with an upward-arranged die pressing surface, the die pressing surface is horizontally arranged, and a micro-nano structure is arranged on the die pressing surface;

stacking a die holder 7, a lower die 6 and an upper die 4 in sequence from bottom to top, wherein the amorphous alloy 5 is positioned between the lower die 6 and the upper die 4 and is abutted against the micro-nano structure;

referring to fig. 2, the gravity assembly 21 is stacked on the upper mold 4 such that the upper mold 4 presses the lower mold 6.

Alternatively, the hot stamping method further includes the steps of preparing a vacuum pumping structure and pumping out the gas in the heating chamber 15 to make the heating chamber 15 reach a predetermined degree of vacuum. Alternatively, the heating chamber 15 may be filled with an inert gas to prevent the parts from being oxidized at a high temperature. The evacuation structure includes a vacuum pump and a vacuum gauge 14.

Referring to fig. 2, alternatively, the imprinting force of the thermal imprinting method of the present invention is applied to the ingot, i.e., the amorphous alloy 5, from the initial stage, rather than applying the compressive stress to the amorphous alloy 5 only at the imprinting stage.

Referring to fig. 2, the thermal embossing process is divided into: initializing 31, heating and pressing 32, keeping temperature 33, annealing 34, fast cooling 35 and demolding 36. Figure 2 provides a typical temperature and load variation during hot embossing.

S1: the lower die holder 7, the lower die 6, the amorphous alloy 5, the upper die 4, the molten silicon plate 3, and the standard weight 2 are gently placed at predetermined positions, and the imprinting force F is applied to the amorphous alloy. Initially subjected to a maximum imprinting force F_w. In order to protect all the components inside the heating chamber 15 from oxidation, the heating chamber 15 is sealed, and the air inside is exhausted by a vacuum pump.

S2: when the vacuum gauge 14 indicates that the vacuum pressure in the heating chamber 15 reaches 10 Pa; the temperature in the heating chamber 15 is raised at a predetermined heating rate r, and the heating furnace 1 is heated from the room temperature T₀Heating to a target imprint temperature T₂At a rate of r₁；

S3: the mould pressing time t, in the heat preservation step, the time length of the amorphous alloy 5 entering for a period of time is delta t₂₃And (4) a heat preservation stage.

S4: during the annealing phase, all parts in the furnace 1 are heated by r₃Low rate of cooling.

S5: when the temperature in the heating chamber 15 falls to the rapid cooling point T₄At that time, the cooling rate rises to r₄。

S6: when the heating chamber 15 is finally cooled to a sufficiently low temperature T_BAnd after the temperature is stabilized for 30 seconds, the weight, the molten silicon plate 3, the upper die 4 and the hot-stamped amorphous alloy 5 are manually taken out to realize demoulding.

As can be seen from FIG. 2, at t₁To t₄In phase, the pressure F is kept constant, while the temperature T is gradually increased and then gradually decreased.

The above are merely alternative embodiments of the present application and are not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement or the like made within the spirit and principle of the present application shall be included in the scope of the claims of the present application.